Apparatus for selectively backlighting a material

Information

  • Patent Grant
  • 8128249
  • Patent Number
    8,128,249
  • Date Filed
    Tuesday, August 28, 2007
    17 years ago
  • Date Issued
    Tuesday, March 6, 2012
    12 years ago
Abstract
A backlighting device (300, 400, 500, 600) emitting light having a first wavelength includes a first radiation emission device (302), e.g., an electroluminescent lamp, for emitting radiation having a second wavelength. A layer (306) of a plurality of photon emitting particles (308), e.g., free standing quantum dots or phosphorus particles, emits light having the first wavelength in response to the first radiation emission device (302), the first wavelength being larger than the second wavelength. A transparent material (116, 120, 122) overlies the layer of a plurality of photon emitting particles (308), wherein the light having a first wavelength passes through the transparent material (116, 120, 122). Optionally, a filter (402) may be placed over the layer (306) to block the radiation having a second wavelength, and a scattering layer (604) may be placed over the layer (306) to scatter wavelength other than the first wavelength.
Description
FIELD

The present invention generally relates to electronic devices and more particularly to a method and apparatus for selectively backlighting a material, for example, a key pad, an icon, or a housing of the electronic devices.


BACKGROUND

The market for personal electronic devices, for example, cell phones, personal digital assistants (PDA's), digital cameras, and music playback devices (MP3), is very competitive. Manufactures are constantly improving their product with each model in an attempt to reduce costs. Many times these improvements do not relate directly to the functionality of the product.


The look and feel of personal portable electronic devices is now a key product differentiator and one of the most significant reasons that consumers choose specific models. From a business standpoint, these outstanding designs (form and appearance) increase market share and margin.


In many portable electronic devices, such as mobile communication devices, individual touch keys, keypads, icons for indicating information, or the housing may be lighted. For keys or a simple icon display on the surface of a housing, for example, light emitting diodes have provided light through a small portion of a surface of the housing to illuminate an icon to a user.


However, it is desired to consume as little power as possible while maximizing luminance and achieving a more exact wavelength of the emitted light.


Accordingly, it is desirable to provide a method and apparatus for selectively backlighting a material. Furthermore, other desirable features and characteristics of the present invention will become apparent from the subsequent detailed description and the appended claims, taken in conjunction with the accompanying drawings and this background.





BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present invention will hereinafter be described in conjunction with the following drawing figures, wherein like numerals denote like elements, and



FIG. 1 is an isometric view of a portable communication device configured to incorporate the exemplary embodiments; and



FIG. 2 is a block diagram of one possible portable communication device of FIG. 1.



FIG. 3 is a partial cross sectional view of a first exemplary embodiment;



FIG. 4 is a partial cross sectional view of a second exemplary embodiment;



FIG. 5 is a partial cross sectional view of a third exemplary embodiment; and



FIG. 6 is a partial cross sectional view of a fourth exemplary embodiment;





DETAILED DESCRIPTION

A combination of light emitting particles formed over a light (radiation) source emitting in the UV or blue spectrum, for example, is used to backlight individual touch keys, keypads, icons, or the housing of an electronic device. In one exemplary embodiment of the light emitting device, an electroluminescent (EL) lamp provides light preferably in the blue spectrum to activate free standing quantum dots (FSQDs) that provide light having a predetermined and specific wavelength. In another exemplary embodiment, a filter is positioned over the light emitting particles to block the light emitted from the light emitting source, thereby ensuring that only light from the light emitting particles emit from the light emitting device. In yet another exemplary embodiment, two light sources are positioned adjacent light emitting particles for modulating the color emitted from the light emitting device. In still another exemplary embodiment, a layer of scattering particles are positioned over the light emitting particles for enabling selective tailoring of color and brightness.


Though the electronic device may comprise any device in which an external user interface is desired, FIG. 1 is an isometric view of an electronic device 110 comprising a display 112, a control panel 114 including a plurality of touch keys 116, and a speaker 118, all encased in a housing 120. In some embodiments, an icon 122 may be included for providing an indication of a status when lighted. In accordance with an exemplary embodiment, a light emitting device (subsequently described in detail) provides a backlight for one or more of the individual touch keys 116, the entire control panel 114, or at least a portion of the housing 120. Some electronic devices 110, e.g., a cell phone, may include other elements such as an antenna, a microphone, and a camera (none shown). Furthermore, while the preferred exemplary embodiment of an electronic device is described as a mobile communication device, for example, cellular telephones, messaging devices, and mobile data terminals, other embodiments are envisioned, for example, personal digital assistants (PDAs), computer monitors, gaming devices, video gaming devices, cameras, and DVD players.


Referring to FIG. 2, a block diagram of an electronic device 210 such as a cellular phone, in accordance with the exemplary embodiment is depicted. Though the exemplary embodiment is a cellular phone, the display described herein may be used with any electronic device in which information, colors, or patterns are to be presented through light emission. The portable electronic device 210 includes an antenna 212 for receiving and transmitting radio frequency (RF) signals. A receive/transmit switch 214 selectively couples the antenna 212 to receiver circuitry 216 and transmitter circuitry 218 in a manner familiar to those skilled in the art. The receiver circuitry 216 demodulates and decodes the RF signals to derive information therefrom and is coupled to a controller 220 for providing the decoded information thereto for utilization in accordance with the function(s) of the portable communication device 210. The controller 220 also provides information to the transmitter circuitry 218 for encoding and modulating information into RF signals for transmission from the antenna 212. As is well-known in the art, the controller 220 is typically coupled to a memory device 222 and a user interface 114 to perform the functions of the portable electronic device 210. Power control circuitry 226 is coupled to the components of the portable communication device 210, such as the controller 220, the receiver circuitry 216, the transmitter circuitry 218 and/or the user interface 114, to provide appropriate operational voltage and current to those components. The user interface 114 includes a microphone 228, a speaker 118 and one or more touch key inputs 116, and the icon 122. The user interface 114 also includes a display 112 which could receive touch screen inputs.


In accordance with the exemplary embodiments, the controller determines when to activate the backlighting of the user interface 214, icons 116, or housing 120. For example, when a call is received, the backlight may illuminate the housing. Or when a text message is received, the icon may be illuminated to indicate the desired information.


Referring to FIG. 3, a first exemplary embodiment of the backlighting device 300 for backlighting a keypad, an icon, or at least a portion of the housing thereof includes a light emitting device 304 including a layer 306 of light emitting particles 308 formed over a light emitting source 302. The light emitting source 302 may emit light having a wavelength preferably in the UV or blue spectrum, but at least having a wavelength equal to or shorter than the wavelength for which the light emitting particles 308 are capable of emitting. The layer 306 of light emitting particles 308 includes any particles capable of emitting light when activated, including preferably free standing quantum dots (FSQDs).


The light emitting source 302 preferably is an electroluminescent (EL) lamp, which is basically a luminescent capacitor. By applying alternating voltage to the electrodes, phosphor particles that are dispersed in dielectric get excited and emit light. An EL lamp is a solid state, low power, uniform area light source with a thin profile. By applying alternating voltage to the electrodes, phosphor particles that are dispersed in dielectric get excited and emit light through a transparent electrode. EL is an effective thin lighting solution that is used to backlight applications that need to be visible in dark conditions.


EL lamps offer significant advantages over point light sources such as discrete light emitting diodes (LEDs). For example, the high LED count that is required to evenly light large liquid crystal displays (LCDs) consumes more current than an alternative EL backlight system. In addition, LED solutions normally require a complex light guide design to distribute the light more uniformly across the viewing area of a display. This combination of LEDs and light guide is generally three to four times thicker than an EL lamp solution.


EL lamps provide many other advantages over LEDs, including uniform lighting, low power consumption and lower heat emission, a thin profile, flexibility and conformability, emission in a wide range of colors, and reliability.


The light emitting particles 308 in this embodiment are free standing quantum dots (FSQDs), or semiconductor nanocrystallites, whose radii are smaller than the bulk exciton Bohr radius and constitute a class of materials intermediate between molecular and bulk forms of matter. FSQDs are known for the unique properties that they possess as a result of both their small size and their high surface area. For example, FSQDs typically have larger absorption cross-sections than comparable organic dyes, higher quantum yields, better chemical and photo-chemical stability, narrower and more symmetric emission spectra, and a larger Stokes shift. Furthermore, the absorption and emission properties vary with the particle size and can be systematically tailored. It has been found that a Cadmium Selenide (CdSe) quantum dot, for example, can emit light in any monochromatic, visible color, where the particular color characteristic of that dot is dependent on the size of the quantum dot.


FSQDs are easily incorporated into or on other materials such as polymers and polymer composites because FSQDs can be made to be soluble in a variety of media and have little degradation over time. These properties allow FSQD polymers and polymer composites to provide very bright displays, returning almost 100% quantum yield.


Applications for FSQD polymers and polymer composites include point of purchase and point of sale posters, mobile device housings or logos, segmented displays, including ultraviolet (UV) and infrared (IR) displays, absorbers for UV and IR sensors or detectors, and light emitting diodes (LEDs). Although the visible advantages inherent to FSQD polymers and polymer composites are attractive, control of the output (light intensity) is problematic.


Quantum Dots (QDs), also known as nanocrystals or Freestanding Quantum Dots (FSQD), are semiconductors composed of periodic groups of II-VI, III-V, or IV-VI materials, for example, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, GaAs, GaP, GaAs, GaSb, HgS, HgSe, HgTe, InAs, InP, InSb, AlAs, AlP, AlSb. Alternative FSQDs materials that may be used include but are not limited to tertiary microcrystals such as InGaP, which emits in the yellow to red wavelengths (depending on the size) and ZnSeTe, ZnCdS, ZnCdSe, and CdSeS which emits from blue to green wavelengths. Multi-core structures are also possible such as ZnSe/ZnXS/ZnS, are also possible where X represents Ag, Sr, Te, Cu, or Mn. The inner most core is made of ZnSe, followed by the second core layer of ZnXS, completed by an external shell made of ZnS.


FSQDs range in size from 2-10 nanometers in diameter (approximately 102-107 total number of atoms). At these scales, FSQDs have size-tunable band gaps, in other words there spectral emission depends upon size. Whereas, at the bulk scale, emission depends solely on the composition of matter. Other advantages of FSQDs include high photoluminescence quantum efficiencies, good thermal and photo-stability, narrow emission line widths (atom-like spectral emission), and compatibility with solution processing. FSQDs are manufactured conventionally by using colloidal solution chemistry.


FSQDs may be synthesized with a wider band gap outer shell, comprising for example ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, MgS, MgSe, GaAs, GaN, GaP, GaAs, GaSb, HgO, HgS, HgSe, HgTe, InAs, InN, InP, InSb, AlAs, AlN, AlP, AlSb. The shell surrounds the core FSQDs and results in a significant increase in the quantum yield. Capping the FSQDs with a shell reduces non-radiative recombination and results in brighter emission. The surface of FSQDs without a shell has both free electrons in addition to crystal defects. Both of these characteristics tend to reduce quantum yield by allowing for non-radiative electron energy transitions at the surface. The addition of a shell reduces the opportunities for these non-radiative transitions by giving conduction band electrons an increased probability of directly relaxing to the valence band. The shell also neutralizes the effects of many types of surface defects. The FSQDs are more thermally stable than organic phosphors since UV light will not chemically breakdown FSQDs. The exterior shell can also serve as an anchor point for chemical bonds that can be used to modify and functionalize the surface.


Due to their small size, typically on the order of 10 nanometers or smaller, the FSQDs have larger band gaps relative to a bulk material. It is noted that the smaller the FSQDs, the higher the band gap. Therefore, when impacted by a photon (emissive electron-hole pair recombination), the smaller the diameter of the FSQDs, the shorter the wavelength of light will be released. Discontinuities and crystal defects on the surface of the FSQD result in non-radiative recombination of the electron-hole pairs that lead to reduced or completely quenched emission of the FSQD. An overcoating shell, e.g., ZnS, having a thickness, e.g., of up to 5 monolayers and higher band gap compared to the core's band gap is optionally provided around the FSQDs core to reduce the surface defects and prevent this lower emission efficiency. The band gap of the shell material should be larger than that of the FSQDs to maintain the energy level of the FSQDs. Capping ligands (molecules) on the outer surface of the shell allow the FSQDs to remain in the colloidal suspension while being grown to the desired size. The FSQDs may then be placed within the display by a printing process, for example. Additionally, a light (radiation) source (preferably a ultra violet (UV) source) is disposed to selectively provide photons to strike the FSQDs, thereby causing the FSQDs to emit a photon at a frequency comprising the specific color as determined by the size tunable band gap of the FSQDs.


A layer comprising a plurality of FSQDs disposed between an electron transport layer (or hole blocking layer) and a hole transport layer. Application of a voltage potential across the structure will create a saturation of a larger population of electron or hole pairs (excitons) that quenches the emission of the photonicly excited emission. The light from the light source excites electrons from the ground state of the FSQDs into a higher electric energy/vibration state. The applied electric field of the voltage potential injects the electrons into free holes (including those in the ground energy state), prohibiting the electrons in a higher energy state to return to the ground energy state. Since photon emission only occurs when the electron relaxes into the ground-level energy state, photon emission is reduced. The level of photon emission from the FSQDs may be controlled by varying the voltage potential.


The exemplary embodiments described herein may be fabricated using known lithographic processes as follows. The fabrication of integrated circuits, microelectronic devices, micro electro mechanical devices, microfluidic devices, and photonic devices, involves the creation of several layers of materials that interact in some fashion. One or more of these layers may be patterned so various regions of the layer have different electrical or other characteristics, which may be interconnected within the layer or to other layers to create electrical components and circuits. These regions may be created by selectively introducing or removing various materials. The patterns that define such regions are often created by lithographic processes. For example, a layer of photoresist material is applied onto a layer overlying a wafer substrate. A photomask (containing clear and opaque areas) is used to selectively expose this photoresist material by a form of radiation, such as ultraviolet light, electrons, or x-rays. Either the photoresist material exposed to the radiation, or that not exposed to the radiation, is removed by the application of a developer. An etch may then be applied to the layer not protected by the remaining resist, and when the resist is removed, the layer overlying the substrate is patterned. Alternatively, an additive process could also be used, e.g., building a structure using the photoresist as a template.


Though various lithography processes, e.g., photolithography, electron beam lithography, and imprint lithography, ink jet printing, may be used to fabricate the light emitting device, a printing process is preferred. In the printing process, the FSQD ink in liquid form is printed in desired locations on the substrate. Ink compositions typically comprise four elements: 1) functional element, 2) binder, 3) solvent, and 4) additive. Graphic arts inks and functional inks are differentiated by the nature of the functional element, i.e. the emissive quantum dot. The binder, solvent and additives, together, are commonly referred to as the carrier which is formulated for a specific printing technology e.g. tailored rheology. The function of the carrier is the same for graphic arts and printed electronics: dispersion of functional elements, viscosity and surface tension modification, etc. One skilled in the art will appreciate that an expanded color range can be obtained by using more than three quantum dot inks, with each ink having a different mean quantum dot size. A variety of printing techniques, for example, Flexo, Gravure, Screen, inkjet may be used. The Halftone method, for example, allows the full color range to be realized in actual printing.


The following detailed description is merely exemplary in nature and is not intended to limit the invention or the application and uses of the invention. Furthermore, there is no intention to be bound by any theory presented in the preceding background or the following detailed description.


In a first exemplary embodiment of the backlighting device 300, depicted in FIG. 3, an EL device (light emitting source) 302 includes a substrate 312 that has a bottom electrode 314 situated thereon. The substrate 312 and electrode 314 do not need to be optically transmissive, because the light is emitted from the opposite side of the device 302, that is, not through the substrate and electrode. A layer of electroluminescent material 318 (phosphor) and a dielectric layer 316 are situated between the bottom electrode 314 and a top electrode 322. A source of alternating voltage 324 is coupled to the top and bottom electrodes to energize the electroluminescent material when selected by activation of the switch 326. An optically transmissive insulating or dielectric layer 320 is disposed between the top electrode and the phosphor 318.


The light emitting device 304 includes a substrate 332 that includes one or more layer, typically provided as support for a layer 306 of FSQDs 308, or protection of device 302, or both. The substrate 332 is formed of a transparent, sturdy, thin material such as glass, ceramic, insulated metal, but may comprise a flexible polymer such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN). An optional structure 334 is provided as a protective layer over the layer 306.


When the layer 306 of the plurality of FSQDs 308 are impacted with light, from the EL device 302, having a wavelength shorter than that which would be emitted by the FSQDs 308, an electron in each of the FSQDs 308 so impacted is excited to a higher level. When the electron falls back to its ground state, a photon is emitted having a wavelength determined by the diameter of the FSQD 308.


It is understood that the light source 302 may be positioned in any location wherein its output may be applied to the light emitting device 304, and may comprise any frequency below that provided as output from the FSQDs 308, but preferably comprises either a wavelength in the blue or ultraviolet (UV) spectrum. It is recognized that the substrate 332 may comprise a rigid structure or a flexible structure.



FIG. 4 is a partial cross section of a second exemplary embodiment of a backlighting device 400 having a filter 402 disposed over the backlighting device 300 as shown in FIG. 3 (elements in FIG. 4 similar to those of FIG. 3 have the same reference numeral). The filter 402 filters the light emitted from the EL device 302, thereby allowing only the light from the FSQDs 308 to be emitted from the backlighting device 400. For example, if the EL device 302 emits blue light and the FSQDs 308 emit red light, the filter will block the blue light. Only the red light will be emitted from the backlighting device 400. It will be appreciated by one skilled in the art that other constructions are possible. For example, filter 402 may be placed between layer 302 and layer 306 when device 302 has substantial emission in the UV. In this case, filter 402 transmits the desired UV radiation, but blocks the visible radiation. Other configurations with multiple filters are also possible. Furthermore, the filter 402 may function as a protective layer, eliminating the need for the layer 334.



FIG. 5 is a partial cross section of a third exemplary embodiment of a backlighting device 500 having a second EL device (light emitting source) 302′ disposed on the bottom of the backlighting device 300, and more specifically on the bottom of the EL device 302 opposed to the light emitting device 304 (elements in FIG. 5 similar to those of FIG. 3 have the same reference numeral). In this embodiment, EL device 302 and light emitting device 304 will be transparent to the wavelength of light emitting from EL device 302′.


An example of the operation of this third exemplary embodiment is where the EL device 302′ produces green light, the EL device 302 produces mostly blue light with elements of green, and the FSQDs 308 have a diameter that produces green light (note the wavelength of blue is shorter than green). The blue light from the EL device 302 excites the FSQDs 308, thereby causing green light to be emitted from the backlighting device 500. Any green light emitted from the EL device 302′ will not be absorbed by the FSQDs and will also be emitted from the backlighting device 500. The voltages 324, 324′ may be adjusted for controlling the intensity of the green light emitted from the backlighting device 500. It will be appreciated by one skilled in the art that all electrodes and substrates in device 302 should be transmissive in some degree to the emitted radiation from device 302′. Or, in some manner, the light from device 302′ is passed to the viewer in combination with the light emitted from layer 308. A benefit from this construction is that multiple colors can be obtained by combining colors from layer 308 and devices 302 and 302′.



FIG. 6 is a partial cross section of a fourth exemplary embodiment of a backlighting device 600 having a layer 602 including scattering particles 604 disposed over the backlighting device 300 as shown in FIG. 3 (elements in FIG. 6 similar to those of FIG. 3 have the same reference numeral). The scattering particles 604 may be of different dimensions, but will have a diameter equal to or smaller than the scattered radiation wavelength. Therefore, the scattering particles 604 will scatter the light from the EL device 302 away from the viewer (and any ambient light entering the backlighting device 600 back toward the viewer), but will not scatter the light from the FSQDs 308 toward the viewer. This scattering will allow for a light emitted from the backlighting device 600 to be more closely aligned with the wavelength of the FSQDs 308 and enhances the brightness from layer 306 in cases where backscattering of ambient light toward the viewer is desirable. It should be recognized that the layer of photon emitting particles 308, in addition to FSQDs, may alternatively comprise other photon emitting material such as phosphorous particles.


The FSQDs 308 in any of the embodiments may include FSQDs having two or more wavelengths, which would provide various desired colors depending on the size of the FSQDs and/or a mix of different compositions of matter. Furthermore, the EL devices 302, 302′ could include a plurality of segments, each emitting a different color.


This scattering, known as Mie and Rayleigh scattering, may be accomplished by integrating particles into a polymeric, e.g., silicone, key pad to enable selective tailoring of key pad color and brightness. The scattering particles may be formed over the light emissive particles, as shown in FIG. 6, or mixed in with the light emissive particles. Rayleigh scattering, which is a limiting case of Mie scattering, is applicable when the radius (r) of the scattering sphere is much smaller than the wavelength (lambda) of the incident light. This represents a practical lower limit to the size of the scattering particles.


The amount of Rayleigh scattering that occurs to light is dependent upon the size of the particles and the wavelength of the light. The scattering coefficient, and therefore the intensity of the scattered light, varies for small size parameter inversely with the fourth power of the wavelength. The intensity I of light scattered by small particles from a beam of unpolarized light of wavelength λ and intensity I0 is given by:






I
=


I
0

×

N
0

×


1
+


cos
2


θ



2






R
2






(


2





π

λ

)

4




(



n
2

-
1



n
2

+
1


)

2




(

d
2

)

6







where R is the distance to the scattering particles, θ is the scattering angle, n is the refractive index of the particle, N0 is Avogadro's number, and d is the diameter of the particle. For example, in the ideal case I/I0=1 (no losses), θ=0 (direct view), R=8 inches (2.03 E8 nm) (typical distance), λ=630 nm (wavelength for the color red), n=n2/n1, n1=1.41 (silicone), and n2=1.45716 (silica), the particle size d=9.8 nanometers.


The strong wavelength dependence of the scattering (˜λ−4) means that blue light is scattered much more than red light, i.e., scattering is more effective at short wavelengths. Furthermore, Rayleigh and Mie scattering can be considered to be elastic scattering since the photon energies of the scattered photons is not changed. Mie scattering is less dependent on wavelength and is more effective when the size of the particle approaches the wavelength of the radiation to be scattered. Mie scattering represents a practical upper boundary for forward scattering the light. Thus, to forward scatter 630 nm light a practical particle size range is between 10 nm and 630 nm.


While at least one exemplary embodiment has been presented in the foregoing detailed description, it should be appreciated that a vast number of variations exist. It should also be appreciated that the exemplary embodiment or exemplary embodiments are only examples, and are not intended to limit the scope, applicability, or configuration of the invention in any way. Rather, the foregoing detailed description will provide those skilled in the art with a convenient road map for implementing an exemplary embodiment of the invention, it being understood that various changes may be made in the function and arrangement of elements described in an exemplary embodiment without departing from the scope of the invention as set forth in the appended claims.

Claims
  • 1. A backlighting device for emitting light having a first wavelength, comprising: an electroluminescent lamp for emitting radiation having a second wavelength;a layer of quantum dots emitting light having the first wavelength in response to the emitted radiation of the electroluminescent lamp, the first wavelength being larger than the second wavelength; anda layer of scattering particles disposed over the layer of quantum dots that scatters the radiation and light having wavelength other that the first wavelength.
  • 2. The backlighting device of claim 1 further comprising a transparent material overlying the layer of quantum dots through which the light having a first wavelength passes.
  • 3. The backlighting device of claim 1 further comprising a filter disposed over the layer of quantum dots that prevents the radiation having a second frequency from passing through while allowing the light to pass through.
  • 4. A backlighting device for emitting light having a first wavelength, comprising: an electroluminescent lamp for emitting radiation having a second wavelength;a layer of quantum dots emitting light having the first wavelength in response to the emitted radiation of the electroluminescent lamp, the first wavelength being larger than the second wavelength; anda radiation emission device disposed on a side of the electroluminescent lamp opposed to the layer of quantum dots for emitting light having the first wavelength.
  • 5. The backlighting device of claim 4 further comprising a transparent material overlying the layer of quantum dots through which the light having a first wavelength passes.
  • 6. The backlighting device of claim 4 further comprising a filter disposed over the layer of quantum dots that prevents the radiation having a second wavelength from passing through while allowing the light to pass through.
  • 7. A backlighting device for emitting light having a first wavelength, comprising: an electroluminescent lamp for emitting radiation having a second wavelength;a layer of quantum dots emitting light having the first wavelength in response to the emitted radiation of the electroluminescent lamp, the first wavelength being larger than the second wavelength; andfurther comprising a transparent material further comprising a transport material wherein the transparent material comprises one of a touch key, an icon, and at least a portion of a housing of an electronic device.
  • 8. The backlighting device of claim 7 further comprising a transparent material overlying the layer of quantum dots through which the light having a first wavelength passes.
  • 9. The backlighting device of claim 7 wherein the layer of quantum dots further comprises phosphorus particles.
  • 10. The backlighting device of claim 7 further comprising a filter disposed over the layer of quantum dots that prevents the radiation having a second wavelength from passing through while allowing the light to pass through.
  • 11. A backlighting device emitting light having a first wavelength, comprising: an electroluminescent lamp for emitting radiation having a second wavelength;a layer of a plurality of free standing quantum dots emitting light having the first wavelength in response to being impacted by the radiation having a second wavelength, the first wavelength being larger than the second wavelength; anda layer including scattering particles disposed over the layer of free standing quantum dots that scatters the radiation having a second wavelength.
  • 12. A backlighting device emitting light having a first wavelength, comprising: a first electroluminescent lamp for emitting radiation having a second wavelength;a layer of a plurality of free standing quantum dots emitting light having the first wavelength in response to being impacted by the radiation having a second wavelength, the first wavelength being larger than the second wavelength; and comprising a second electroluminescent lamp disposed contiguous to the first electroluminescent lamp, for emitting light having the first wavelength.
  • 13. The backlighting device of claim 12 further comprising a transparent material overlying the layer of free standing quantum dots, wherein the light having a first wavelength passes through the transparent material.
  • 14. The backlighting device of claim 12 further comprising a filter disposed over the layer of a plurality of free standing quantum dots that prevents the radiation having a second wavelength from passing through while allowing the light having a first wavelength to pass through.
  • 15. A backlighting device emitting light having a first wavelength, comprising: an electroluminescent lamp for emitting radiation having a second wavelength; anda layer of a plurality of free standing quantum dots emitting light having the first wavelength in response to being impacted by the radiation having a second wavelength, the first wavelength being larger than the second wavelength;further comprising a transparent material further comprising a transport material wherein the transparent material comprises one of a touch key, an icon, and at least a portion of a housing of an electronic device.
  • 16. A backlighting device emitting light having a first wavelength, comprising: an electroluminescent lamp for emitting radiation having a second wavelength;a layer of quantum dots and phosphorus particles emitting light having the first wavelength in response to the emitted radiation of the electroluminescent lamp, the first wavelength being larger than the second wavelength; andfurther comprising a transparent material further comprising a transport material wherein the transparent material comprises one of a touch key, an icon, and at least a portion of a housing of an electronic device.
  • 17. The backlighting device of claim 16 further comprising a transparent material overlying the layer of quantum dots and phosphorus particles, wherein the light having a first wavelength passes through the transparent material.
  • 18. The backlighting device of claim 16 further comprising a filter disposed over the layer of quantum dots and phosphorus particles that prevents the radiation having a second wavelength from passing through while allowing the light to pass through.
  • 19. A backlighting device emitting light having a first wavelength, comprising: an electroluminescent lamp for emitting radiation having a second wavelength;a layer of quantum dots and phosphorus particles emitting light having the first wavelength in response to the emitted radiation of the electroluminescent lamp, the first wavelength being larger than the second wavelength; anda layer including scattering particles disposed over the layer of quantum dots and phosphorus particles that scatters the radiation and light having wavelength other than the first wavelength.
  • 20. A backlighting device emitting light having a first wavelength, comprising: an electroluminescent lamp for emitting radiation having a second wavelength; anda layer of quantum dots and phosphorus particles emitting light having the first wavelength in response to the emitted radiation of the electroluminescent lamp, the first wavelength being larger than the second wavelength; anda radiation emission device disposed on a side of the electroluminescent lamp opposed to the layer of quantum dots and phosphorus particles, for emitting light having the first wavelength.
US Referenced Citations (344)
Number Name Date Kind
3248588 Blazek et al. Apr 1966 A
3510732 Amans, et al. May 1970 A
3774086 Vincent, Jr. Nov 1973 A
3825792 Rokosz et al. Jul 1974 A
3875456 Kano et al. Apr 1975 A
4035686 Fleming Jul 1977 A
4082889 DiStefano Apr 1978 A
4130343 Miller et al. Dec 1978 A
4366407 Walsh Dec 1982 A
4377750 Pape et al. Mar 1983 A
4382272 Quella et al. May 1983 A
4608301 Ishizuka et al. Aug 1986 A
4719386 Toho Jan 1988 A
4738798 Mahler Apr 1988 A
4766526 Morimoto et al. Aug 1988 A
4772885 Uehara et al. Sep 1988 A
4780752 Angerstein et al. Oct 1988 A
4820016 Cohen et al. Apr 1989 A
4902567 Eilertsen et al. Feb 1990 A
4929053 Muller-Stute et al. May 1990 A
4931692 Takagi et al. Jun 1990 A
5064718 Buscall et al. Nov 1991 A
5077147 Tanaka et al. Dec 1991 A
5208462 O'Connor et al. May 1993 A
5260957 Hakimi et al. Nov 1993 A
5294870 Tang et al. Mar 1994 A
5422489 Bhargava Jun 1995 A
5434878 Lawandy Jul 1995 A
5442254 Jaskie Aug 1995 A
5455489 Bhargava Oct 1995 A
5470910 Spanhel et al. Nov 1995 A
5504661 Szpak Apr 1996 A
5527386 Statz Jun 1996 A
5534056 Kuehnle et al. Jul 1996 A
5586879 Szpak Dec 1996 A
5599897 Nishiguchi et al. Feb 1997 A
5716679 Krug et al. Feb 1998 A
5717289 Tanaka Feb 1998 A
5777433 Lester et al. Jul 1998 A
5813752 Singer et al. Sep 1998 A
5813753 Vriens et al. Sep 1998 A
5847507 Butterworth et al. Dec 1998 A
5874803 Garbuzov et al. Feb 1999 A
5881200 Burt Mar 1999 A
5882779 Lawandy Mar 1999 A
5909081 Eida et al. Jun 1999 A
5917279 Elschner et al. Jun 1999 A
5955528 Sato et al. Sep 1999 A
5955837 Horikx et al. Sep 1999 A
5959316 Lowery Sep 1999 A
5962971 Chen Oct 1999 A
5975711 Parker et al. Nov 1999 A
5988822 Abe et al. Nov 1999 A
6005342 Morton Dec 1999 A
6023371 Onitsuka et al. Feb 2000 A
6048616 Gallagher et al. Apr 2000 A
6066861 Hohn et al. May 2000 A
6117529 Leising et al. Sep 2000 A
6236493 Schmidt et al. May 2001 B1
6249372 Kobayashi et al. Jun 2001 B1
6259506 Lawandy Jul 2001 B1
6322901 Bawendi et al. Nov 2001 B1
6350041 Tarsa et al. Feb 2002 B1
6358652 Tomiuchi et al. Mar 2002 B1
6464898 Tomoike et al. Oct 2002 B1
6482664 Lee et al. Nov 2002 B1
6501091 Bawendi et al. Dec 2002 B1
6515314 Duggal et al. Feb 2003 B1
6565770 Mayer et al. May 2003 B1
6576155 Barbera-Guillem Jun 2003 B1
6577073 Shimizu et al. Jun 2003 B2
6580545 Morrison et al. Jun 2003 B2
6586096 Border et al. Jul 2003 B2
6600175 Baretz et al. Jul 2003 B1
6608332 Shimizu et al. Aug 2003 B2
6608439 Sokolik et al. Aug 2003 B1
6613247 Hohn et al. Sep 2003 B1
6637924 Pelka et al. Oct 2003 B2
6639733 Minano et al. Oct 2003 B2
6641755 Tomoike et al. Nov 2003 B2
6642652 Collins, III et al. Nov 2003 B2
6650044 Lowery Nov 2003 B1
6653778 Tomiuchi et al. Nov 2003 B1
6677610 Choi et al. Jan 2004 B2
6703781 Zovko Mar 2004 B2
6710366 Lee et al. Mar 2004 B1
6710911 LoCascio et al. Mar 2004 B2
6714711 Lieberman et al. Mar 2004 B1
6724141 Andriessen Apr 2004 B2
6731359 Fukaya May 2004 B1
6734465 Taskar et al. May 2004 B1
6744077 Trottier et al. Jun 2004 B2
6744960 Pelka Jun 2004 B2
6777706 Tessler et al. Aug 2004 B1
6781148 Kubota et al. Aug 2004 B2
6791259 Stokes et al. Sep 2004 B1
6794686 Chang et al. Sep 2004 B2
6801270 Faris et al. Oct 2004 B2
6803719 Miller et al. Oct 2004 B1
6812500 Reeh et al. Nov 2004 B2
6819845 Lee et al. Nov 2004 B2
6821559 Eberspacher et al. Nov 2004 B2
6830835 Saito et al. Dec 2004 B2
6835326 Barbera-Guillem Dec 2004 B2
6838743 Yamada et al. Jan 2005 B2
6864626 Weiss et al. Mar 2005 B1
6870311 Mueller et al. Mar 2005 B2
6876796 Garito et al. Apr 2005 B2
6885033 Andrews Apr 2005 B2
6890777 Bawendi et al. May 2005 B2
6891330 Duggal et al. May 2005 B2
6903505 McNulty et al. Jun 2005 B2
6913830 Decker et al. Jul 2005 B2
6914265 Bawendi et al. Jul 2005 B2
6924596 Sato et al. Aug 2005 B2
6957608 Hubert et al. Oct 2005 B1
7005667 Chen et al. Feb 2006 B2
7005669 Lee Feb 2006 B1
7008559 Chen Mar 2006 B2
7029935 Negley et al. Apr 2006 B2
7040774 Beeson et al. May 2006 B2
7042020 Negley May 2006 B2
7045956 Braune et al. May 2006 B2
7046439 Kaminsky et al. May 2006 B2
7065285 Chen et al. Jun 2006 B2
7066623 Lee et al. Jun 2006 B2
7070300 Harbers et al. Jul 2006 B2
7071616 Shimizu et al. Jul 2006 B2
7075225 Baroky et al. Jul 2006 B2
7078732 Reeh et al. Jul 2006 B1
7090355 Liu et al. Aug 2006 B2
7091653 Ouderkirk et al. Aug 2006 B2
7091656 Murazaki et al. Aug 2006 B2
7102152 Chua et al. Sep 2006 B2
7123796 Steckl et al. Oct 2006 B2
7126162 Reeh et al. Oct 2006 B2
7129515 Okuyama et al. Oct 2006 B2
7135816 Kawaguchi et al. Nov 2006 B2
7144131 Rains Dec 2006 B2
7166010 Lamansky et al. Jan 2007 B2
7175948 Yoshihara et al. Feb 2007 B2
7190870 Sundar et al. Mar 2007 B2
7196354 Erchak et al. Mar 2007 B1
7199393 Park et al. Apr 2007 B2
7213940 Van De Ven et al. May 2007 B1
7235792 Elofson Jun 2007 B2
7239080 Ng et al. Jul 2007 B2
7242030 Wang et al. Jul 2007 B2
7253452 Steckel et al. Aug 2007 B2
7265488 Ng et al. Sep 2007 B2
7273309 Ford et al. Sep 2007 B2
7279832 Thurk et al. Oct 2007 B2
7294881 Korenari et al. Nov 2007 B2
7321193 Antoniadis et al. Jan 2008 B2
7326365 Bawendi et al. Feb 2008 B2
7350933 Ng et al. Apr 2008 B2
7374807 Parce et al. May 2008 B2
7393618 Ioku et al. Jul 2008 B2
7420323 Krummacher Sep 2008 B2
7430355 Heikenfeld et al. Sep 2008 B2
7462502 Paolini et al. Dec 2008 B2
7481562 Chua et al. Jan 2009 B2
7495383 Chua et al. Feb 2009 B2
7497581 Beeson et al. Mar 2009 B2
7513669 Chua et al. Apr 2009 B2
7534002 Yamaguchi et al. May 2009 B2
7535524 Chua et al. May 2009 B2
7553683 Martin et al. Jun 2009 B2
7554257 Krummacher et al. Jun 2009 B2
7560747 Cok Jul 2009 B2
7614759 Negley Nov 2009 B2
7645397 Parce et al. Jan 2010 B2
7682850 Harbers et al. Mar 2010 B2
7686493 Roshan et al. Mar 2010 B2
7692373 Bawendi et al. Apr 2010 B2
7710026 Cok et al. May 2010 B2
7723744 Gillies et al. May 2010 B2
7791092 Tarsa et al. Sep 2010 B2
7791271 Cok et al. Sep 2010 B2
7799586 Leung et al. Sep 2010 B2
7888700 Kahen Feb 2011 B2
7901111 Negley et al. Mar 2011 B2
7902748 Cok Mar 2011 B2
7952105 Cok May 2011 B2
20010001207 Shimizu et al. May 2001 A1
20020071948 Duff et al. Jun 2002 A1
20020127224 Chen Sep 2002 A1
20020186921 Schumacher et al. Dec 2002 A1
20030030706 Jagannathan et al. Feb 2003 A1
20030151700 Carter et al. Aug 2003 A1
20030156425 Turnbull et al. Aug 2003 A1
20030160260 Hirai et al. Aug 2003 A1
20030227249 Mueller et al. Dec 2003 A1
20040007169 Ohtsu et al. Jan 2004 A1
20040233139 Asano et al. Nov 2004 A1
20040245912 Thurk et al. Dec 2004 A1
20040259363 Bawendi et al. Dec 2004 A1
20040262583 Lee Dec 2004 A1
20050012076 Morioka Jan 2005 A1
20050088079 Daniels Apr 2005 A1
20050093422 Wang et al. May 2005 A1
20050093430 Ibetson et al. May 2005 A1
20050098787 Andrews May 2005 A1
20050134723 Lee et al. Jun 2005 A1
20050135079 Yin Chua et al. Jun 2005 A1
20050139852 Chen et al. Jun 2005 A1
20050180680 Kong Aug 2005 A1
20050214967 Scher et al. Sep 2005 A1
20050236556 Sargent et al. Oct 2005 A1
20050261400 Yang et al. Nov 2005 A1
20050265404 Ashdown Dec 2005 A1
20050271548 Yang et al. Dec 2005 A1
20050272159 Ismagilov et al. Dec 2005 A1
20050275615 Kahen et al. Dec 2005 A1
20050279949 Oldham et al. Dec 2005 A1
20060001036 Jacob et al. Jan 2006 A1
20060002101 Wheatley et al. Jan 2006 A1
20060003097 Andres et al. Jan 2006 A1
20060003114 Enlow et al. Jan 2006 A1
20060003156 Masutani et al. Jan 2006 A1
20060024525 Jeong et al. Feb 2006 A1
20060034065 Thurk Feb 2006 A1
20060057480 Lin et al. Mar 2006 A1
20060060862 Bawendi et al. Mar 2006 A1
20060063289 Negley et al. Mar 2006 A1
20060066210 Ng et al. Mar 2006 A1
20060068154 Parce et al. Mar 2006 A1
20060081862 Chua et al. Apr 2006 A1
20060103589 Chua et al. May 2006 A1
20060105483 Leatherdale et al. May 2006 A1
20060113895 Baroky et al. Jun 2006 A1
20060145599 Stegamat et al. Jul 2006 A1
20060147703 Walker et al. Jul 2006 A1
20060157686 Jang et al. Jul 2006 A1
20060157720 Bawendi et al. Jul 2006 A1
20060169971 Cho et al. Aug 2006 A1
20060197437 Krummacher et al. Sep 2006 A1
20060199886 Ryang Sep 2006 A1
20060204676 Jones et al. Sep 2006 A1
20060204679 Jones et al. Sep 2006 A1
20060210726 Jones et al. Sep 2006 A1
20060214903 Kurosaka Sep 2006 A1
20060215958 Yeo et al. Sep 2006 A1
20060221021 Hajjar et al. Oct 2006 A1
20060227546 Yeo et al. Oct 2006 A1
20060232725 Chua et al. Oct 2006 A1
20060238103 Choi et al. Oct 2006 A1
20060238671 Kim et al. Oct 2006 A1
20060244367 Im et al. Nov 2006 A1
20060245710 Borrelli et al. Nov 2006 A1
20060274226 Im et al. Dec 2006 A1
20060279296 Lee et al. Dec 2006 A1
20070012928 Peng et al. Jan 2007 A1
20070012941 Cheon Jan 2007 A1
20070013996 Verma Jan 2007 A1
20070014318 Hajjar et al. Jan 2007 A1
20070018102 Braune et al. Jan 2007 A1
20070018558 Chua et al. Jan 2007 A1
20070034833 Parce et al. Feb 2007 A1
20070036510 Ingman et al. Feb 2007 A1
20070036962 Sasaki et al. Feb 2007 A1
20070045777 Gillies et al. Mar 2007 A1
20070071218 Zhang Mar 2007 A1
20070081329 Chua et al. Apr 2007 A1
20070085092 Chen et al. Apr 2007 A1
20070087197 Jang et al. Apr 2007 A1
20070090755 Eida et al. Apr 2007 A1
20070096078 Lee et al. May 2007 A1
20070096634 Krummacher May 2007 A1
20070112097 Olson et al. May 2007 A1
20070112101 Choi et al. May 2007 A1
20070112118 Park et al. May 2007 A1
20070115995 Kim et al. May 2007 A1
20070121129 Eida et al. May 2007 A1
20070131905 Sato et al. Jun 2007 A1
20070145350 Kobori Jun 2007 A1
20070164661 Kuma Jul 2007 A1
20070170418 Bowers et al. Jul 2007 A1
20070170447 Negley et al. Jul 2007 A1
20070171188 Waites Jul 2007 A1
20070200492 Cok et al. Aug 2007 A1
20070201056 Cok et al. Aug 2007 A1
20070223219 Medendorp et al. Sep 2007 A1
20070235751 Radkov et al. Oct 2007 A1
20070241661 Yin Oct 2007 A1
20070246734 Lee et al. Oct 2007 A1
20070263408 Chua et al. Nov 2007 A1
20070281140 Haubrich et al. Dec 2007 A1
20070298160 Jang et al. Dec 2007 A1
20080001124 Hachiya et al. Jan 2008 A1
20080001528 Eida Jan 2008 A1
20080012031 Jang et al. Jan 2008 A1
20080029710 Sekiya et al. Feb 2008 A1
20080048936 Powell et al. Feb 2008 A1
20080057342 Sekiya Mar 2008 A1
20080070153 Ioku et al. Mar 2008 A1
20080074050 Chen et al. Mar 2008 A1
20080144333 Gourlay Jun 2008 A1
20080165235 Rolly et al. Jul 2008 A1
20080169753 Skipor et al. Jul 2008 A1
20080172197 Skipor et al. Jul 2008 A1
20080173886 Cheon et al. Jul 2008 A1
20080237540 Dubrow Oct 2008 A1
20080254210 Lai et al. Oct 2008 A1
20080277626 Yang et al. Nov 2008 A1
20080297028 Kane et al. Dec 2008 A1
20080308825 Chakraborty et al. Dec 2008 A1
20090001385 Skipor et al. Jan 2009 A1
20090017268 Skipor et al. Jan 2009 A1
20090021148 Hachiya et al. Jan 2009 A1
20090034292 Pokrovskiy et al. Feb 2009 A1
20090050907 Yuan et al. Feb 2009 A1
20090057662 Brazis et al. Mar 2009 A1
20090114932 Chou May 2009 A1
20090152567 Comerford et al. Jun 2009 A1
20090162011 Coe-Sullivan et al. Jun 2009 A1
20090196160 Crombach et al. Aug 2009 A1
20090208753 Coe-Sullivan et al. Aug 2009 A1
20090215208 Coe-Sullivan et al. Aug 2009 A1
20090236621 Chakraborty Sep 2009 A1
20090321755 Jang et al. Dec 2009 A1
20100002414 Meir et al. Jan 2010 A1
20100014799 Bulovic et al. Jan 2010 A1
20100051898 Kim et al. Mar 2010 A1
20100067214 Hoelen et al. Mar 2010 A1
20100068468 Coe-Sullivan et al. Mar 2010 A1
20100103648 Kim et al. Apr 2010 A1
20100110728 Dubrow et al. May 2010 A1
20100113813 Pickett et al. May 2010 A1
20100123155 Pickett et al. May 2010 A1
20100142182 Van Woudenberg et al. Jun 2010 A1
20100144231 Landry et al. Jun 2010 A1
20100149814 Zhai et al. Jun 2010 A1
20100155749 Chen et al. Jun 2010 A1
20100167011 Dubrow Jul 2010 A1
20100193806 Byun Aug 2010 A1
20100208493 Choi et al. Aug 2010 A1
20100243053 Coe-Sullivan et al. Sep 2010 A1
20100246009 Polley et al. Sep 2010 A1
20100265307 Linton et al. Oct 2010 A1
20100283036 Coe-Sullivan et al. Nov 2010 A1
20100283072 Kazlas et al. Nov 2010 A1
20100301360 Van De Ven et al. Dec 2010 A1
20110025224 Wood et al. Feb 2011 A1
Foreign Referenced Citations (40)
Number Date Country
0328202 Aug 1989 EP
1731583 Dec 2006 EP
1 909 134 Apr 2008 EP
1 912 233 Apr 2008 EP
1260707 Oct 1989 JP
02-244104 Sep 1990 JP
04-229807 Aug 1992 JP
4238304 Aug 1992 JP
04-281433 Oct 1992 JP
05-152609 Jun 1993 JP
05-303017 Nov 1993 JP
06-238161 Aug 1994 JP
06-301071 Oct 1994 JP
07-002912 Jan 1995 JP
07-176794 Jul 1995 JP
08-007614 Jan 1996 JP
09-027642 Jan 1997 JP
09-050057 Feb 1997 JP
09-080434 Mar 1997 JP
10-012925 Jan 1998 JP
11 224556 Aug 1999 JP
2002-216962 Aug 2002 JP
2006-073869 Mar 2006 JP
WO-2003070816 Aug 2003 WO
WO-2003079414 Sep 2003 WO
WO-2006104689 Oct 2006 WO
WO-2007002234 Jan 2007 WO
WO-2007009010 Jan 2007 WO
WO-2007046649 Apr 2007 WO
WO-2007136816 Nov 2007 WO
WO-2008029633 Mar 2008 WO
WO-2009002512 Dec 2008 WO
WO-2009011922 Jan 2009 WO
WO-2009014590 Jan 2009 WO
WO-2009014707 Jan 2009 WO
WO-2009137053 Jan 2009 WO
WO-2009145813 Dec 2009 WO
WO-2009151515 Dec 2009 WO
WO-2010014205 Feb 2010 WO
WO-2011020098 Feb 2011 WO
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