Patent Application
20130023188
Silicon wafers are used as the substrate to build the majority of semiconductor devices. Manufacturing of silicon wafers starts with growth of single crystal silicon ingots. A sequence of processes is used to turn a silicon ingot into wafers. A wafer can be a complete wafer or a sliced silicon (substrate) wafer. The process typically consists of the following steps: slicing, edge profiling or chamfering, flattening (lapping or grinding), etching, and polishing. Grinding is a flattening process for the surface of silicon wafers, not for the edges.
On the front side of a wafer, semiconductor devices are built. The back side of a wafer is typically thinned to a certain thickness by grinding. Such grinding the back of the wafer is simply called backside grinding, usually done by a diamond wheel. In backside grinding, the removal amount is typically a few hundred microns (in wafer thickness), and it is typically carried out in two steps: coarse grinding and fine grinding.
Coarse grinding employs a coarse grinding diamond wheel with larger diamond abrasives to remove the majority of the total removal amount required, as well as a faster feed rate to achieve higher throughput. For fine grinding, a slower feed rate and a fine grinding wheel with smaller diamond abrasives are used to remove a small amount of silicon.
A conventional grinding tool typically has multiple grinding modules, which are used to grind the backside of a semiconductor wafer 1 in various stages of the grinding process. Coarse grinding is done with a first grinding wheel at a first stage or station, and fine grinding is subsequently done with a second grinding wheel at a second stage. Movement between the two different stages or stations causes delay and misalignment issues that can impact the cost and quality of the overall process.
For a more complete understanding of the present invention, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
The drawings, schematics and diagrams are illustrative and not intended to be limiting, but are examples of embodiments of the invention, are simplified for explanatory purposes, and are not drawn to scale.
The making and forming of the present exemplary embodiments are discussed in detail below. It should be appreciated, however, that embodiments of the present invention provide many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the invention, and do not limit the scope of the invention.
The present invention will be described with respect to exemplary embodiments in a specific context, namely a wafer backside grinding system, using a grinding wheel that has both coarse grinding and fine grinding capabilities.
a) is a schematic view of an illustrative embodiment of a portion of a grinding system with a single grinding wheel 101 that has both coarse grinding and fine grinding capability. A semiconductor wafer 201 is placed by a robot or manually on a grinding chuck table 202 with the front-side down to hold the wafer 201 on the chuck table 202. The grinding chuck table 202 may hold the wafer 201 down by vacuum. A double-sided tape, or an edge clamp instead of the vacuum chuck may be used to secure the wafer 201 to the chuck table 202 as well. The grinding chuck table 202 rests on a turntable 203 that can rotate about turntable axis 204. As will be explained in more detail below, the grinding chuck table 202 spins during grinding.
A grinding wheel head 103 may be vertically movable. A grinding wheel spindle axis 102 and a grinding wheel 101 are fitted to the lower end thereof, whereas a motor 104 for driving the wheel spindle axis 102 is fitted to the upper portion thereof. The wheel spindle axis 102 is driven and rotated by the motor 104. The movement of the wheel head 103 is controlled by a control unit 105 in the system. The grinding wheel 101 is simultaneously turned and, when the wheel head is lowered, the wafer 201 on top of the chuck table is ground by the grinding wheel 101. The grinding wheel 101 is capable of being lowered by the wheel head to reach the chuck table 202 so that once a wafer is placed on the chuck table, the grinding wheel 101 can be lowered to reach the wafer regardless the thickness of the wafer. The grinding wheel 101 can perform coarse grinding and fine grinding selectively. The control unit 106 selects which grinding operation the grinding wheel 101 performs, based on various inputs from users at real time or programmed ahead of time.
During grinding, the wheel head 103 moves vertically down, so that the lower surface of the grinding wheel 101, which is its grinding pad (1013 or 1011 shown in
After processing is completed, the grinding wheel 101 is raised by the wheel head 103 and the turntable 203 is rotated, for example, in a clockwise direction, so that the semiconductor wafer 201 is moved to a different station on the grinding system, such as an etching station or a polishing station.
b) is a schematic view of an illustrative embodiment of a single grinding wheel 101 that has both coarse grinding and fine grinding capability. The grinding wheel 101 has an outer base 1014 forming a cup-shaped frame, and it is so called because it looks like a cup. A first abrasive grain pad 1013 is attached to the surface of the outer base 1014. The outer base 1014 further encompasses an inner frame 1012 which is also cup-shaped, with a second abrasive grain pad 1011 attached to the surface of the inner frame 1012. A first abrasive grind pad 1013 and a second abrasive grind pad 1011 may be of different materials, formed by diamonds, or coated diamonds; and of different grain sizes, such as coarse grains (e.g., in the range of #4 to #240) or fine grains (e.g., as fine as #1000 to #4000 on the mesh scale). Wheels with smaller grain sizes generally produce smoother surfaces. Therefore the first abrasive grind pad 1013 and the second abrasive grind pad 1011 can selectively perform either coarse grinding or fine grinding on a wafer, controlled by the control unit 106.
Both the inner frame 1012 and the outer base 1014 share a common spindle axis 102, which is attached to the 103 wheel head shown in
A highly schematic representation of an exemplary grinding machine is illustrated in
g)-(h) illustrate portions of the grinding tool of
When the grinding wheel 101 is in either coarse grinding or fine grinding position, the grind wheel 101 can tilt relative the wafer 201. The tilt may be performed by tilting the axis of the wafer 201 as shown in
The system shown in
Although the present embodiments and their advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure as defined by the appended claims. For example, many of the features and functions discussed above can be implemented in software, hardware, or firmware, or a combination thereof. As another example, it will be readily understood by those skilled in the art that may be varied while remaining within the scope of the present disclosure.
Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present disclosure. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps.
