This application is the U.S. national phase of PCT Application No. PCT/CN2018/111631 filed on Oct. 24, 2018, which claims priority to Chinese Patent Application No. 201820433213.7 filed on Mar. 28, 2018, the contents of which are incorporated herein in their entirety by reference.
The present disclosure relates to the field of display technology, and, for example, in particular to an array substrate, a display panel and a display device.
Organic Light Emitting Diode (OLED) display devices and Quantum dots Light-emitting Diode (QLED) display devices are self-luminous display devices, and these self-luminous display devices include pixel electrodes which are used as an anode, a common electrode which is a cathode, and a light emitting layer provided between the pixel electrodes and the common electrode. The light emitting layer is capable of emitting light when an appropriate voltage is applied between the anode and the cathode.
An array substrate includes a plurality of pixel units, wherein each pixel unit includes a storage capacitor including at least three electrode plates parallel to each other, the at least three electrode plates parallel to each other include at least a first electrode plate, a second electrode plate and a third electrode plate, the first electrode plate is electrically connected to the second electrode plate, the third electrode plate is disposed between the first electrode plate and the second electrode plate, and the first electrode plate and the second electrode plate each have a portion facing towards the third electrode plate.
In some embodiments, the portion facing towards the third electrode plate of at least one of the first electrode plate and the second electrode is bent toward a direction of the third electrode plate.
In some embodiments, the at least three electrode plates parallel to each other further include a fourth electrode plate, the fourth electrode plate is electrically connected to the first electrode plate and is disposed between the first electrode plate and the third electrode plate, and the fourth electrode plate has a portion facing towards the third electrode plate.
In some embodiments, each pixel unit includes in turn an active layer, a gate insulation layer, a gate electrode of a first thin film transistor (TFT), an interlayer insulation layer, a source electrode and a drain electrode of the first TFT which are disposed in a same layer, a passivation layer, and a pixel electrode on a base substrate;
the drain electrode of the first TFT is electrically connected to the pixel electrode through a first via hole penetrating the passivation layer; the active layer is integrated with the first electrode plate; and the pixel electrode is integrated with the second electrode plate.
In some embodiments, in the array substrate, the third electrode plate and the drain electrode of the first TFT are disposed in a same layer.
In some embodiments, in the array substrate, the third electrode plate is electrically connected to the gate electrode of the first TFT through a second via hole penetrating the interlayer insulation layer.
In some embodiments, the array substrate further includes a second TFT, a data line, and a gate line, wherein a source electrode of the second TFT is connected to the data line, a gate electrode of the second TFT is connected to the gate line, and the source electrode of the second TFT, a drain electrode of the second TFT, the source electrode of the first TFT, and the drain electrode of the first TFT are disposed in a same layer, the gate electrode of the second TFT and the gate electrode of the first TFT are disposed in a same layer; wherein the drain electrode of the second TFT is electrically connected to the gate electrode of the first TFT through a third via hole penetrating the interlayer insulation layer.
In some embodiments, the at least three electrode plates parallel to each other further include a fourth electrode plate which is electrically connected to the first electrode plate and has a portion facing towards the third electrode plate, the fourth electrode plate and the gate electrode of the first TFT are disposed in a same layer.
In some embodiments, the fourth electrode plate is electrically connected to the first electrode plate through a fourth via hole penetrating the gate insulation layer.
In some embodiments, a planarization layer is provided between the passivation layer and the pixel electrode, a recess is provided in a portion of the planarization layer facing towards the third electrode plate, the second electrode plate is deposited on the planarization layer and forms a bending part at the recess; and/or
a protrusion is provided at a portion of the base substrate facing towards the third electrode plate, the first electrode plate is deposited on the substrate, and the first electrode plate forms a bending part at the protrusion.
In some embodiments, the array substrate further includes an anode, a cathode, and a light emitting layer provided between the anode and the cathode, wherein the pixel electrode is the anode, the light emitting layer is disposed at a side of each pixel unit, and the light emitting layer is an organic light emitting layer or a quantum dot light emitting layer.
A display panel includes any one of the above array substrate.
A display device includes any one of the above display panel.
A gate electrode of the thin film transistor T2 (also referred to as the switch TFT) is connected to a gate line G1, a source electrode of the thin film transistor T2 is connected to a data line D1, and a drain electrode of the thin film transistor T2 is connected to a gate electrode of the thin film transistor T1 (also referred to as the driving TFT). A source electrode of the thin film transistor T1 is connected to a power source line Vdd, and a drain electrode of the thin film transistor T1 is connected to a pixel electrode (the anode of the organic light emitting diode (OLED) OL1). A first electrode C1 of the storage capacitor C is connected to the drain electrode of the thin film transistor T2 and the gate electrode of the thin film transistor T1, a second electrode C2 of the storage capacitor C is connected to the drain electrode of the thin film transistor T1 and the anode electrode of OL1.
In the driving circuit of the OLED display shown in
In order to increase the capacitance value of the storage capacitor C, it is usually necessary to increase the facing area of the two electrodes of the storage capacitor. However, under the condition that the display area (the area of the display region of the display panel) is limited, the capacitance value cannot be increased significantly through this method.
Some embodiments of the present disclosure provide an array substrate. The array substrate includes a plurality of pixel units, wherein each pixel unit has a storage capacitor provided thereon. The storage capacitor includes at least three electrode plates parallel to each other, the at least three electrode plates parallel to each other include a first electrode plate, a second electrode plate and a third electrode plate, wherein the first electrode plate is electrically connected to the second electrode plate, the third electrode plate is disposed between the first electrode plate and the second electrode plate, the first electrode plate has a portion facing towards the third electrode plate, and the second electrode plate has a portion facing towards the third electrode plate.
In the array substrate provided by the above embodiment, the storage capacitor of each pixel unit includes at least three electrode plates parallel to each other, the third electrode plate provided between the first electrode plate and the second electrode plate faces towards the first electrode plate and the second electrode plate, respectively, and thus forming the storage capacitor. Compared with the related art, the distance between the electrode plates is reduced, and the overall capacitance value of the storage capacitor is increased by increasing the number of electrode plates of the storage capacitor without increasing the area occupied by the storage capacitor.
The array substrate applied in the OLED display is described in the following. As shown in
In some embodiments, referring to
Referring to
In some embodiments, the base substrate 1 is a glass substrate.
In some embodiments, each pixel unit 100 further includes a storage capacitor. Referring to
Compared with a storage capacitor having two electrode plates, the array substrate provided in the embodiment shown in
In some embodiments, referring to
In some embodiments, the drain electrode 113 of the first TFT 110 is connected to the pixel electrode 130 through a first via hole 51 penetrating the passivation layer 5, and also connected to the active layer 2. Based on such structure, the first electrode plate 210 is connected to the drain electrode 113 of the first TFT 110, and the second electrode plate 220 is also connected to the drain electrode 113 of the first TFT 110, and thereby the first electrode plate 210 is electrically connected to the second electrode plate 220. The third electrode plate 230 is disposed between the first electrode plate 210 and the second electrode plate 220, and faces towards the first electrode plate 210 and the second electrode plate 220, respectively. Thus, a capacitor formed by the third electrode plate 230 and the first electrode plate 210 and a capacitor formed by the third electrode plate 230 and the second electrode plate 220 form two capacitors in parallel. The capacitance value of the two parallel capacitors is larger than a capacitance value of a storage capacitor formed by only two electrode plates.
In some embodiments, as shown in
In some embodiments, referring to
In some embodiments, as shown in
Referring to
In some embodiments, the first electrode plate of the storage capacitor is integrated with the active layer; thus, during the manufacturing of the array substrate, after the active layer is prepared using a semiconductor, a part of the active layer is ionized to complete the preparation of the first electrode plate. The second electrode of the storage capacitor is integrated with the pixel electrode; thus, by preparing the pixel electrode, the second electrode plate is also prepared.
In some embodiments, since the third electrode plate and the drain electrode of the first TFT are provided in the same layer, the third electrode plate is also prepared by manufacturing the drain electrode of the first TFT.
Therefore, in the above embodiments, the manufacturing process of the three electrode plates of the storage capacitor is simple and convenient, and does not increase complicated manufacturing processes.
In some embodiments, as shown in
In some embodiments, the gate electrode of the first TFT 110, the source electrode of the first TFT 110, the drain electrode of the first TFT 110, the gate electrode of the second TFT 120, the source electrode of the second TFT 120, the drain electrode of the second TFT 120 are made of one or at least two of the metal materials Cu, Al, Mo, T1, Cr and W.
In some embodiments, the gate electrode of the first TFT 110, the source electrode of the first TFT 110, the drain electrode of the first TFT 110, the gate electrode of the second TFT 120, the source electrode of the second TFT 120, the drain electrode of the second TFT 120 each have a single-layer structure.
In some embodiments, the gate electrode of the first TFT 110, the source electrode of the first TFT 110, the drain electrode of the first TFT 110, the gate electrode of the second TFT 120, the source electrode of the second TFT 120, the drain electrode of the second TFT 120 each have a multilayer structure including at least two layers.
In some embodiments, the gate insulation layer 3 is made of silicon nitride or silicon oxide.
In some embodiments, the gate insulation layer 3 has a single-layer structure.
In some embodiments, the gate insulation layer 3 has a multilayer structure including at least two layers. For example, the gate electrode insulation layer includes a silicon oxide layer and a silicon nitride layer.
In some embodiments, the passivation layer 5 is made of silicon nitride or silicon oxide.
In some embodiments, the passivation layer 5 has a single-layer structure.
In some embodiments, the passivation layer 5 has a multilayer structure including at least two layers. For example, the passivation layer 5 includes a silicon oxide layer and a silicon nitride layer.
In some embodiments, as shown in
In some embodiments, referring to
In some embodiments, the anode of the OLED is made of indium tin oxide (ITO).
In some embodiments, the anode of the OLED has an ITO/Ag/ITO structure made of ITO and Ag.
In some embodiments, the cathode of the OLED is made of Al or Ag.
In some embodiments, the storage capacitor includes the first electrode plate 210, the second electrode plate 220 and the third electrode plate 230, a portion of at least one of the first electrode plate 210 and the second electrode plate 220 facing towards the third electrode plate is bent toward the third electrode plate 230.
Since the portion of at least one of the first electrode plate 210 and the second electrode plate 220 facing towards the third electrode plate is bent toward the third electrode plate 230, the distance between the third electrode plate and the bent electrode plate is reduced, and the capacitance value of the storage capacitor is increased.
The array substrate shown in
On the basis of the above structure, as shown in
Compared with the structure of the array substrate shown in
In some embodiments, as shown in
In the structure of the array substrate shown in
The array substrate provided by the above embodiment is described by taking a storage capacitor including three electrode plates as an example.
In some embodiments, the number of the electrode plates included in the storage capacitor is greater than 3.
In some embodiments, in addition to the first, the second and the third electrode plates 210, 220 and 230 included in the storage capacitor in the above embodiment, the storage capacitor further includes a fourth electrode plate which is electrically connected to the first electrode plate 210, and is disposed between the first electrode plate 210 and the third electrode plate 230. The fourth electrode plate has a portion facing towards the third electrode plate 230.
In the above embodiment, by further providing the fourth electrode plate electrically connected to the first electrode plate 210 between the first electrode plate 210 and the third electrode plate 230, the distance between two opposite electrode plates is reduced, increasing the capacitance value of the storage capacitor.
In some embodiments, on the basis of the structure of the array substrate of the above embodiment, the storage capacitor further includes a fifth electrode plate which is disposed between the second electrode plate 220 and the third electrode plate 230, and is electrically connected to the second electrode plate 220, reducing the distance between the two opposite electrode plates, and increasing the capacitance value of the storage capacitor.
In some embodiments, referring to
The array substrate further includes gate lines 101, data lines 102 and power source lines (Vdd) 103. A gate electrode of the second TFT 120 is connected to the gate line 101, a source electrode of the second TFT 120 is connected to the data line 102, and a drain electrode of the second TFT 120 is connected to the gate electrode of the first TFT 110. A source electrode of the first TFT 110 is connected to Vdd 103, and a drain electrode of the first TFT 110 is connected to the pixel electrode 130.
Referring to
Referring to
In some embodiments, the active layer 2 is integrated with the first electrode plate 210, the pixel electrode 130 is integrated with the second electrode plate 220, the third electrode plate 230 is provided in a same layer as that of the drain electrode 113 of the first TFT 110, and the fourth electrode plate 240 is provided in a same layer as that of the gate electrode 111 of the first TFT 110.
In some embodiments, as shown in
In some embodiments, referring to
In some embodiments, in a pixel unit 100, the source electrode 122 of the second TFT 120, the drain electrode 123 of the second TFT 120, the source electrode 112 of the first TFT 110 and the drain electrode 113 of the first TFT 110 are provided in a same layer. The gate electrode 121 of the second TFT 120 and the gate electrode 111 of the first TFT 110 are provided in a same layer. The third electrode plate 230 is electrically connected to the gate electrode 111 of the first TFT 110 through a second via hole 41 penetrating the interlayer insulation layer 4, and the drain electrode 123 of the second TFT 120 is electrically connected to the gate electrode 111 of the first TFT 110 through a third via hole 42 penetrating the interlayer insulation layer 4.
In the structure of the above array substrate, as shown in
In the embodiment shown in
The above embodiments are described by taking an array substrate in the OLED display panel.
In some embodiments, the array substrates in the above OLED display panel are applicable to a QLED display panel.
In some embodiments, the array substrate in the QLED includes an anode, a cathode, and a light emitting layer located between the anode and the cathode. When the array substrate in the OLED display panel is applied to the QLED display panel, the light emitting layer is provided at a side of each pixel unit, the light emitting layer is a quantum dot light emitting layer, and the pixel electrode is the anode.
Some embodiments provide a display panel which includes the array substrate in any of the above embodiments.
Some embodiments provide a display device which includes the above display panel.
Compared with a solution that improves the stability of the display image by increasing the facing area of two electrodes in a storage capacitor having only the two electrodes, the array substrates, the display panel and the display device in the above embodiments increase the entire capacitance value of the storage capacitor by increasing the number of the electrode plates of the capacitor and reducing the distance between the electrode plates without increasing the area occupied by the storage capacitor.
Number | Date | Country | Kind |
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201820433213.7 | Mar 2018 | CN | national |
Filing Document | Filing Date | Country | Kind |
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PCT/CN2018/111631 | 10/24/2018 | WO | 00 |
Publishing Document | Publishing Date | Country | Kind |
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WO2019/184321 | 10/3/2019 | WO | A |
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