Claims
- 1. An asymmetric vertical cavity surface emitting laser structure comprising:
a substrate; a plurality of semiconductor layers formed on said substrate; one of said semiconductor layers comprising a quantum well active layer; a first reflector comprising Al located on one side of said quantum well active layer and a second reflector located on the opposite side of said quantum well active layer; and one of said semiconductor layers being a non-active layer comprising nitrogen, said non-active layer comprising nitrogen being located between said quantum well active layer and said substrate.
- 2. The asymmetric vertical cavity surface emitting laser of claim 1 wherein said non-active layer is separated from said quantum well active layer by a distance of at least about 200 Å.
- 3. The asymmetric vertical cavity surface emitting laser structure of claim 1 wherein said non-active layer comprising comprises Al, Ga, As and N.
- 4. The asymmetric vertical cavity surface emitting laser structure of claim 1 wherein said non-active layer comprising nitrogen is located in said first reflector.
- 5. The asymmetric vertical cavity surface emitting laser structure of claim 1 wherein said non-active layer comprises GaAs1−xNx.
- 6. The asymmetric vertical cavity surface emitting laser structure of claim 4 wherein the value of x lies between 0 and 0.1.
- 7. The asymmetric vertical cavity surface emitting laser structure ofclaim 1 wherein said non-active layer comprising nitrogen has a thickness of about 600 Å.
- 8. The asymmetric vertical cavity surface emitting laser structure of claim 1 with said quantum well active layer comprising In, Ga, As and N.
- 9. The asymmetric vertical cavity surface emitting laser structure of claim 1 with two of said plurality of semiconductor layers comprising a tunnel junction.
- 10. An asymmetric vertical cavity surface emitting laser structure comprising:
a substrate comprising GaAs; a plurality of semiconductor layers formed on said substrate; a plurality of said plurality of semiconductor layers being quantum well active layers, said quantum well active layers comprising In, Ga, As and N; a first reflector located on one side of said quantum well active layers and a second reflector located on the opposite side of said quantum well active layers; a first cladding layer located between said first reflector and said quantum well active layers; a second cladding layer positioned between said second reflector and said quantum well active layers; and one of said semiconductor layers being a non-active layer comprising nitrogen, said non-active layer comprising nitrogen located between said first cladding layer and said first reflector.
- 11. The asymmetric vertical cavity surface emitting laser of claim 10 wherein said non-active layer is separated from said quantum well active layers by a distance of at least about 200 Å.
- 12. The asymmetric vertical cavity surface emitting laser structure of claim 10 with said quantum well active layers comprising In, Ga, As and N.
- 13. The asymmetric vertical cavity surface emitting laser structure of claim 10 with said first cladding layer comprising Ga and As.
- 14. An asymmetric vertical cavity surface emitting laser structure comprising:
a substrate; a plurality of semiconductor layers formed on said substrate; one of said semiconductor layers comprising an quantum well active layer; a first reflector located on the same side of said quantum well active layer as said substrate and a second reflector located on the opposite side of said quantum well active layer; a first cladding layer located between said first reflector and said quantum well active layer; a second cladding layer positioned between said second reflector and said quantum well active layer; and one of said semiconductor layers being a non-active layer comprising In, Ga, As and P, said non-active layer located between said first cladding layer and said first reflector.
- 15. The asymmetric vertical cavity surface emitting laser structure of claim 14 wherein said non-active layer has a thickness of about 600 Å.
- 16. The asymmetric vertical cavity surface emitting laser of claim 14 wherein said non-active layer is separated from said quantum well active layer by a distance of at least about 200 Å.
- 17. The asymmetric vertical cavity surface emitting laser structure of claim 1 wherein said non-active layer comprising nitrogen further comprises InGaP.
- 18. The asymmetric vertical cavity surface emitting laser structure of claim 14 wherein said non-active layer comprises GaAs1−xNx.
- 19. The asymmetric vertical cavity surface emitting laser structure of claim 14 wherein the value of x lies between 0 and 0.1.
- 20. The asymmetric vertical cavity surface emitting laser structure of claim 14 with two of said plurality of semiconductor layers comprising a tunnel junction.
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application relates to the co-pending application Ser. No. ______ (Attorney Reference No: 10011480-1), filed on the same day, entitled “Method for Obtaining High Quality InGaAsN Seminconductor Devices” by Takeuchi, Chang, Luan, Bour, Leary and Tan, owned by the assignee of this application and incorporated herein by reference.