Patent Application
20050116214
The first field emission devices (FED's) employed Spindt-type or etched emitters as the source for emitting electrons, in which a metal such as molybdenum (Mo) or a semiconductor material such as Si is used to form micro-tips (tips) on cathode electrodes. The strong electric field required to extract electrons from the micro-tips is provided by positively biased gate electrodes placed in close proximity to these emitters. However, fabrication of Spindt-type or etched emitter arrays is a complex process, requiring from 50 to 65 processing steps. Manufacturing costs of Spindt-type emitters are aggravated by the fact that very large evaporator throws are required for array fabrication as the substrate size becomes larger, entailing the employment of expensive vacuum equipment. Moreover, due to the fact that the emitter materials exhibit relatively high work functions, high electric fields are necessary, so ion bombardment from residual ionized gas molecules will cause tip or gate erosion. Residual gas molecules may also be adsorbed by the emitting surfaces, impairing their work function, therefore reducing the emitted currents. Such working conditions increase the risk of surface damage and unstable operation of the device. Damage to a single tip through events such as arcs may render an array inoperable by producing a short circuit.
a shows a sketch of a cross-section of a triode type field emission device based on tips where 1 represents the substrate that supports the tips 2, which are centered in a cavity 3, the cavity being delimited by vertical wall patterned in a dielectric 4, which receives a conducting film 5, normally referred as gate or grid. By applying a voltage between the gate 5 and the tip 2, electrons are emitted toward an anode represented by 6,7,8, where 6 is a transparent glass, 7 is a conductive coating that collects the electrons and 8 is a phosphor layer that produces light when impacted by energetic electrons.
Carbon nanotubes have attracted considerable attention as a promising material for electron emitter devices because of their ability to expel electrons when a very small negative potential is applied to it with respect to an anode. Since 1995, many experimental results have been published on field emission for multi-walled nanotubes, as well as for single-walled nanotubes.
Carbon nanotubes possess several properties favorable for field emitters: they have a sharp tip and a large aspect ratio (greater than 100), good electrical conductivity, high chemical stability and high mechanical strength, so that they are receiving much attention of research institutions that wish to employ them as the electron emission sources for field emission devices. Besides the fact that the nanotube work-function is relatively high (close to 5 eV), the large aspect ratio of carbon nanotube geometry implies high electrostatic field enhancement factors at its tip, leading to improved field emission performance, and because of that, from a application point of view, this material is often referred as having low-effective-work-function. The manufacture of diode structure field emission devices using carbon nanotubes is a straightforward process.
Although diode structure field emission devices based on carbon nanotubes have been successfully fabricated, emitted current control is not easy in such structures, because it demands high anode voltage switching.
Control is improved by using a triode structure, in which control elements are placed closer to the emitter structure, thereby reducing the voltage needed to achieve on-and-off switching of electrons emission. One such triode field emission device is shown in cross-section in
A significant problem inherent to this structure lies in the complexity of the manufacturing process, which requires a large number of processing steps. Moreover, because the gate is positioned between the anode and the cathode, some of the electrons emitted by the cathode are collected by the control gate, reducing the efficiency of the device as a source of electrons. In addition, the exposure of the gate increases the probability of catastrophic failure due to discharge between electrodes.
To avoid these drawbacks a distinct arrangement of the triode elements has been proposed, in which the control electrodes are placed under the cathode, being separated from the latter by a dielectric layer. One example of this so-called under-gate triode structure is described in the paper “An under-gate triode structure field emission display with carbon nanotube emitters”, Choy et al., Diamond and Related Materials 10 (2001) 1705-1708 or in the U.S. Pat. No. 6,420,726 B2.
Among the limitations associated with this device is the fact that the polyimide insulating layer, like most organic materials, has a tendency toward outgassing. The use of an inorganic dielectric layer, on the other hand, increases processing complexity. Moreover, the fabrication of this layer adds steps to the manufacturing process. Furthermore, as shown in
Certain illustrative embodiments illustrating organization and method of operation, together with objects and advantages may be best understood by reference detailed description that follows taken in conjunction with the accompanying drawings in which:
While this invention is susceptible of embodiment in many different forms, there is shown in the drawings and will herein be described in detail specific embodiments, with the understanding that the present disclosure of such embodiments is to be considered as an example of the principles and not intended to limit the invention to the specific embodiments shown and described. In the description below, like reference numerals are used to describe the same, similar or corresponding parts in the several views of the drawings.
The terms “a” or “an”, as used herein, are defined as one or more than one. The term “plurality”, as used herein, is defined as two or more than two. The term “another”, as used herein, is defined as at least a second or more. The terms “including” and/or “having”, as used herein, are defined as comprising (i.e., open language). The term “coupled”, as used herein, is defined as connected, although not necessarily directly, and not necessarily mechanically.
Without limitation, the present invention, in accordance with certain embodiments thereof, relates to field emission devices. Certain embodiments are more particularly related, to field emission devices having a surface electron source having low effective-work-function material and an electrode structure of improved robustness featuring low power consumption due to lower gate voltage and capacitance, as well as a simplified fabrication technique, suitable for providing electron sources for employment in applications requiring low and high currents, such as, for example, Hall Effect thrusters or traveling-wave tubes, as well as other applications. However, the present invention should not be constrained to devices meeting each of these criteria.
In accordance with certain exemplary embodiments-consistent with the present invention, an electron emitter assembly arrangement can be provided in which there is a more efficient use of the available cathode area. In certain embodiments, gate current can be avoided. In certain embodiments, the manufacturing process can be simplified by reducing the number of processing steps. In certain embodiments, out-gassing problems can be avoided due to the use of inorganic insulators. In certain embodiments, the capacitance between the gates and the cathodes can also be reduced, as well as avoiding the relative process complexity usually associated with the deposition of inorganic insulators. Certain embodiments provide an electric field that is symmetric with respect to a vertical plane running along the central axis of the cathode. Certain embodiments may provide an emitter assembly arrangement in which triode-mode electron emission takes place at lower bias voltage than in the current arrangements, while the ratio of electrons reaching the anode with respect to the number of electrons reaching the dielectric is reduced. In yet other embodiments, dielectric charging can be decreased.
These improvements can be achieved in accordance with certain embodiments in which an emitter assembly arrangement has at least one gate electrode, a plurality of substantially prismatic conducting cathodes placed in a parallel relation with the gate electrode and isolated from the latter by a dielectric layer, the cathodes having an aspect ratio close to one and different effective-work-function properties on the portion facing the gate and on the portion facing away from the gate, the width and height of the cathodes being comparable, i.e., the aspect ratio of the cathodes cross-section being close to one. The cross-section is preferably substantially uniform along the length of the cathode stripes.
In accordance with certain embodiments consistent with the invention, the dielectric can be a solid dielectric layer, with the cathodes resting atop the surface of the layer. In certain embodiments, the cathodes' cross-section can be substantially trapezoidal in shape. In certain embodiments, the portion of the cathodes facing the gate can be flat. Alternatively, the portions of the cathodes facing toward the gate can be substantially cylindrical in shape. Alternatively, the cathodes can be substantially cylindrical in shape. Alternatively, the cathodes can be inserted in trenches engraved in the dielectric surface. Alternatively, the dielectric surface conformably overlays the gate surface, in a way that its cross-section presents trenches that are similar in shape to ones previously engraved in the gate. Alternatively, the cathodes can be substantially half-round in shape.
According to another feature of certain exemplary embodiments, the portion of the cathodes facing away from the gate can be coated with a stripe of low-effective-work-function material. Preferably, the gate electrode is made of a material that can form a stable oxide, such as silicon or aluminum (for example) and the dielectric layer between the cathodes and the gate being provided by the oxidation of the gate material. Many variations will occur to those skilled in the art upon consideration of the present teachings.
As shown in
The low effective-work-function material can encompass any material which is smooth, rough or bristly, homogeneous or heterogeneous, amorphous or crystalline, whose Fowler-Nordheim curves provide slopes compatible with apparent work functions substantially smaller than 5 eV (for example, approximately 3 eV or less). Examples of materials with low actual work function are MoC, WC, TiC, LaB6, ZrC, NbC, HfC to mention a few. While the term “work-function” is well defined in the art, the term “effective work-function” is often less precisely defined. In the context of this document, the effective work-function is a function of both actual work function, morphology of nanostructures and geometry, so that a structure having a geometry that causes a higher work function material to behave as if it is a lower work function material can be considered to have a lower effective work function. Low actual work-function materials, can also be considered to be low effective-work-function materials. Similar, nanostructured carbon or nanostructured diamond-like carbon, can have combination of sp2- and sp3-nanostructural features that can provide material with lower threshold field due to combination of several factors, including but not limited to the geometrical factors, electron supply through sp2-conducting channels and negative or low electron affinity of diamond-like nanostructures. Emitter devices that are historically used, such as Si and Mo, have work functions of approximately 4-5 eV. Carbon nanotubes have actual work functions of approximately 4.5 eV (work function of bulk graphite), but because of their extremely large ratio of height to width (50 to 100 or more), based on the analysis Fowler-Nordheim curves they behave as if they have a low work function, and can thus be considered to be a low effective work function material. Another example includes carbon nanotubes coated with dielectrics (MgO) where improved field emission is due to secondary electrons field emission. Low work-function materials, for purposes of this document are considered to be materials with work-functions (actual or effective) below about 3-4 eV. Materials that may be considered to have a low effective work function include, but are not limited to carbon nanotubes, coated carbon nanotubes (by metals or insulators such as MgO, for example), boron nitride nanotubes, silicon nanotubes, silicon carbide nanorods, diamond nanorods, carbon nanoflakes, carbon nanosheets and other porous interconnected grapheene morphologies, porous conducting nanostructures, nanostructured diamond-like carbon, carbon or metal (Au, Ag, Ni and others) nanowires, composites of polymer matrix with incorporated nanostructures (nanoparticles or l-dimensional nanostructures), hybrid structures, for example, of carbon nanotubes and nanodiamond or metal particles. The nanostructures can be also purposely doped (for example, B or N-doped diamond nanorods). Another example of effective low-work function material that can be implemented in the present invention can be a thin (up to a few hundreds of nanometers) coating formed by electrophoretic deposition of nanodiamond particles or a nanodiamond thin film grown by CVD over the cathode crest area. Thin films of other wide band-gap dielectrics grown over a crest of a cathode can be also used. One of the major mechanisms of improved field emission for a structure of a conductor coated with a thin film of a wide band-gap material can be low back contact barrier (less than 3-4 eV) for electron injection from conducting substrate to a conduction band of wide band-gap material and typically negative or low positive (less than approximately 1 eV) electron affinity of wide band-gap materials.
In an exemplary embodiment consistent with the invention, the conducting plate is made of doped silicon. The electric insulating layer is provided by oxidation of the surface of the silicon plate. In other embodiments, Aluminum could be used for the conducting plate and aluminum oxide could be used as the insulating layer. Other embodiments can also be envisioned within the scope of the present invention. The fillet is provided with a plurality of nanotubes 35 forming a crest of emitter tips facing the anode. Other effective low work-function structures could also be used. Although the nanotubes may be deposited in the form of a carbon nanotube paste, in one of the embodiments of the invention the carbon nanotubes may also be grown employing a Chemical Vapor Deposition (CVD) technique or alternative vapor deposition technique, or any other suitable deposition technique.
According to certain non-limiting exemplary embodiments, these cathode stripes can have a prismatic shape, i.e., one in which the cross-section remains substantially uniform along its length. Several cross-section shapes can be used in the cathodes, either regular or irregular, as long as the height and width dimensions are comparable, the aspect ratio of the cross-section being close to 1 (e.g., preferably less than about 2 and, generally speaking, less than 8-10) and the prism showing mirror type longitudinal symmetry along a plane that is perpendicular to the plane implicitly defined by the gate 31. The prismatic cathodes may have all longitudinal faces substantially flat, or may have their cross-section with one or more sides rounded either convexedly nor concavely with a curvature radius being commensurate with the size of the sides. In general, according to certain embodiments, the cathode structure can form a prismatic structure and presenting a cross-section profile with a shape that can be represented by a closed curve.
By defining an hypothetical straight line which is parallel to the gate, and using the term “line-gate distance” to refer to the distance between the straight line and the gate, the closed curve of certain embodiments can be characterized by the fact that there is an open range of line-gate distances (as defined in Mathematical Analysis), the open range being limited by lower and upper extreme points which are not part of the range. The open range of line-gate distances in certain embodiments can be characterized as follows (although other arrangements may be possible within the present teachings):
Other structures that fall within the operational constraints described herein may also be used in certain embodiments consistent with the present invention, so this set of geometric criteria should not be considered to be an exhaustive definition.
In accordance with certain non-limiting embodiments, the cathode can also be characterized by the fact that the portion around the crest, which faces away from the gate electrode (toward the anode), is overlaid with a low effective work-function material such as carbon nanoflakes or carbon nanotubes, in a way that the low effective work-function material form a stripe with substantially constant width, around the crest, this width being deliberately smaller than the width of the cathode stripe.
As stated above, the aspect ratio of the cross section should be close to 1. For certain preferred embodiments consistent with the present invention, aspect ratios that are less than about 2 can be considered to be close to 1. In fact, certain aspect ratios that are less than 1, perhaps as low as approximately ½ for certain shapes, are also quite acceptable and are considered to be close to 1 for purposes of this document. Additionally, aspect ratios that are less than about ½ (producing a needle-like structure) may also be possible when the proper geometry and material is utilized to combat undesirable effects. In other embodiments, aspect rations less than about 8-10 can be considered close to 1. This is in contrast with known devices in which the aspect ratio is approximately 15-20 or even greater, often resulting in a failure of such structures to produce significant electron emissions in locations other than the edges. When the emissions are restricted to the edge of the cathode adjacent the dielectric, high probability exists for the electron emission to flow back toward the gate. The term aspect ratio can generally be defined as the aspect ratio (width/height) of a rectangle that encloses the cathode structure (with or without the emitter structure, since the emitter structure is generally insignificant in height compared with the cathode metal). The term “aspect ratio” will be illustrated and explained in greater detail later.
By reference to the cross-section of the cathode, it is noted that in this example the mechanical momentum provided to an electron expelled from the crest of the cathode and close to the cathode surface should point toward the anode, in a way that after an initial acceleration toward the anode is provided, any change in the field direction toward the gate will not be sufficient to change the electron trajectory toward the gate. This is, generally speaking, a desirable condition, and under ideal circumstances, no electrons would travel toward the gate. Certain embodiments consistent with the present invention are capable of approaching this ideal, perhaps emitting no more than about 1% or less of the emission toward the gate. In order to attempt to approach or guarantee such condition, the region that is coated with the low effective-work-function material should preferably be restricted to an area at or near the crest of the cathode (closest to the anode structure). Additionally, the cross-sectional aspect ratio of the cathode is kept below approximately 10 (preferably below 2, and most preferably approximately 1), and the overall geometry of the cathode and emitter structure should preferably result in the cathode emitter structure having a low effective work-function.
Thus, in accordance with certain embodiments consistent with the present invention, a field emitter device has a substantially planar conducting material forming a gate electrode layer having a first surface. A conductive stripe forms a cathode on the insulating layer, the conductive stripe having a cross-sectional maximum width W parallel with the gate and a cross-sectional maximum height H, with an aspect ratio defined by W/H. An electric insulating layer covers at least a portion of the first surface between the cathode and the gate electrode. At least one conductive anode is positioned above the cathode to collect electrons. An emitter structure is disposed on a surface of the cathodes closest to the anode to form a cathode/emitter structure. When an electric field is generated across the insulating layer, the cathode/emitter structure has a combination of work function and aspect ratio that causes electron emission from the emitter structure toward the anode at a field strength that is lower than that which causes emissions from other regions of the cathode. Substantially all electron emissions occur between the emitter structure and the anode, and substantially no electron emissions occur from the cathode toward the gate.
Another field emitter device has a substantially planar conducting material forming a gate electrode. An electric insulating layer is juxtaposed to the gate electrode. A plurality of parallel conductive stripes form cathodes, with the insulating layer being between the gate and the anode. The cathodes are positioned in a substantially parallel relation with the gate electrode, the cathodes each having a cross-section taken normal to the length, wherein a cross-sectional width, divided by a cross-sectional height of the cathodes is less than approximately 10, the cross-section being substantially uniform along the length of the cathode stripes. At least one conductive anode is positioned above and in a parallel relation to the cathode stripes, where the electrons are collected. The anode has its width approximately the same or larger than the width of the cathode stripes. A strip of low effective work-function material is disposed along a crest of the cathodes facing the anode.
In
The cathode cross-section 39 shown in
Many other cathode arrangements are also possible. When the cathode and emitters are positioned above a metalized cathode on the surface of layer 32, the better emission patterns are generally achieved when the cross section of the cathode metal rises to an apex or crest above the dielectric layer, with the apex having a smaller dimension than the base of the cathode geometry. Additionally, sharp edged transitions with the dielectric layer are also best avoided where possible. The particular shape can vary substantially using any variety of lines or curved profiles that lead from the apex to the surface of the dielectric layer 32. The aspect ratio of this cross section is considered to be measured as the aspect ratio of a rectangle that fully encloses the cathode's cross-sectional shape, as will be discussed. It is noted that these guidelines are not to be considered absolutely rigid, since manufacturability should also be factored into any practical design.
Due to the limited cross-section cathode area, the electron emission uniformity may be impaired by the voltage drop along the cathode length. To circumvent this problem, a fish-bone arrangement may be employed, such as shown in schematic form in
In accordance with certain embodiments consistent with the present invention, a further advantage may often be achieved in the device manufacturing process. In accordance with certain embodiments, the manufacturing process may be significantly simplified over the previous techniques. Some of the steps of an example process flow are shown in schematic form in
Thus, a field emitter device fabrication process consistent with certain embodiments involves providing a conducting material plate gate electrode; providing a dielectric layer over the surface of the gate electrode; coating the dielectric layer with photo-resist; patterning the resist with a plurality of channels, the bottom of the channels exposing the surface of the dielectric layer; depositing a conducting layer covering the patterned resist surface as well as the exposed surface of the dielectric layer at the bottom of the channels; lifting-off the resist leaving the conductive stripes deposited on the dielectric layer surface forming the cathodes; and overlaying the crest of the cathodes with a low effective-work-function material.
In certain embodiments, the conducting material comprises a material that presents a stable oxide and the dielectric layer is provided by oxidizing a surface of the conducting material that can form a stable oxide. For example, the conducting material can be a doped silicon wafer and the dielectric layer can be provided by thermally oxidizing the surface of the wafer. The conducting material can also be an Aluminum plate and the dielectric layer can be provided by growing a layer of Aluminum oxide by anodizing. In certain other embodiments, the dielectric layer is provided by depositing a stable oxide. Other embodiments can further involve depositing a catalyst layer over the conducting layer and growing a layer of carbon nanotubes in-situ over the catalyst layer using chemical vapor deposition. The process can further involve forming a conductive diffusion barrier between the catalyst and the cathode surface. Another embodiment can involve the electrophoretic deposition of nanomaterials such as nanotubes or nanodiamond such that the electrostatic field lines result in nanomaterial deposition on the cathode or alternatively a lift-off process involving photoresist is used to restrict the deposition of the nanomaterial to the crest of the cathode and any excess nanomaterial is removed during the lift-off step.
In certain embodiments, a field emitter device fabrication process involves providing a conducting material plate gate electrode; producing a plurality of trenches in a surface of the plate with a plurality of trenches; providing a dielectric layer over the surface of the plate; providing conducting cathodes at least partly inlaid within the trenches; and overlaying a crest of the cathodes with a low effective-work-function material. The low effective-work-function material can be carbon nanotubes.
In certain embodiments, a field emitter device fabrication process involves providing an insulating substrate; producing a plurality of trenches in a surface of the insulating substrate; providing a first conducting layer overlaying the substrate and conforming with its surface, forming at least one gate electrode; providing a dielectric layer overlaying the first conducting layer and conforming with the conducting layer forming trenches substantially concentric with the trenches engraved on the surface of the substrate; providing a plurality of cathode stripes cathode stripes formed at least partly within the trenches, the width and height of the cross-section of the cathodes being comparable; and overlaying the portion of the cathodes facing away from the gate electrode (crest of the cathode) with a strip of low effective-work-function material.
While the arrangements shown in
To lessen the possibility of dielectric breakdown between the cathodes and the undergate, the electric field at the rear region of the cathodes can be reduced by eliminating the conductive layer from the sides and bottom of the trenches. FIG. 13 shows an arrangement which reduces the chance of such accidental dielectric breakdown. In this drawing, the insulating substrate is provided with a first plurality of trenches 75. A second plurality of conducting strips 82 is juxtaposed to the substrate's face 81, in a discontinuous pattern in which the portions 83 of the inner walls 72 of the trenches are free of the gate conducting material layer. The element 86 is the conductive cathode strip while 87 is the low effective-work-function material which coats the crest of the cathodes 86. As shown, each cathode strip 86 is separated by gate strips 82, 82′, 82″ that overlay only the flat portion of the face, being interrupted at the edges 84 of the trenches. Each independent gate strip 82 is buried under the dielectric 85, and can have its voltage set simultaneously to all other strips, or independently.
The invention is not restricted to the type of trench profile showed in
Thus, in accordance with certain embodiments, a field emitter device has a substantially planar insulating plate, constituting a self-standing substrate. A plurality of trenches are formed on a surface of the insulating plate, the trenches presenting a mirror type longitudinal symmetry along a plane that is perpendicular to the insulating plate. A first conducting layer overlays a surface of the insulating plate that contains the trenches and conforms with the surface, forming at least one gate electrode. A dielectric layer is juxtaposed to the first conducting layer and in conformation with the conducting layer, forming trenches that present mirror type longitudinal symmetry along a plane that coincides to the symmetry plane of the trenches present in the insulating plate. A plurality of cathode stripes are formed within the trenches formed on the dielectric layer, a width and a height of a cross-section of the cathodes having an aspect ratio that is less that approximately 10. A crest portion of the cathodes faces away from the gate electrode being at least partially overlaid with a strip of low effective-work-function material. At least one conductive anode is positioned in a parallel relation to the insulating plate, where the electrons are collected, the anode having its width approximately equal to or larger than the width of the cathode stripes.
While the preceding examples show cathodes having their upper surfaces overlaid with nanotubes, it should be understood that these are exemplary embodiments of the invention, which can also encompass any low effective-work-function material. In accordance with certain embodiments consistent with the present invention, an effective-work-function contrast is provided along the perimeter of the cathode cross-sections. As shown in the preceding figures, many of the embodiments shown guarantee that the portion of the cathodes which face away from the gate have a substantially lower effective-work-function than the remainder of the surface, while other embodiments guarantee that the surface that is closer to the gate is in contact with the dielectric layer, avoiding any emission at all. Consequently, notwithstanding the fact that the electric field is stronger in the portion of the cathodes facing toward the gate, electron emission occurs from the crest of the cathodes, due to the above mentioned effective-work-function contrast or presence of the insulating layer.
The efficiency of this electron emission process is dependent upon the cathode dimensions, preferably of the order of a few micrometers, as well as the dielectric layer thickness. Small cathode cross-section reduces the gate-cathode capacitance resulting in an improved high-frequency response of the device, which is desirable for certain applications. Moreover, electron emission can be achieved with a lower gate voltage than in other arrangements, resulting in less electrons being attracted backwards toward the gate and therefore less charging of the dielectric, while the focusing of the electron beam can be greatly improved.
TABLE 1 below depicts field strength (V/μm) above a crest of a cathode at 50V applied to a back gate and 1V/μm macroscopic field created by an anode. The gate-cathode distance is 0.5 μm, the dielectric constant of the dielectric between the gate and cathode lines is 4; inter-cathode lines distance is equal 1.5 width of lines; lines height is 0.5 μm. The trapezoidal profile has 80 degrees angles between the trapezium basis and the sides; L is the length of the bottom (largest) side of the trapezium or a diameter of a semicircular profile, correspondingly.
From TABLE 1 it is clear that a semicircular profile provides much higher local fields at the crest in comparison with trapezoidal profile. Among trapezoidal profiles (which is practical and readily manufacturable profile) the profile with smaller aspect ratio has higher local field above the crest, thus resulting in better field emission (lower voltage at the gate will be required to initiate emission from an emitting structure placed at the crest; similar, maximum currents can be achieved at lower gate voltage).
Referring now to
The performance of the suggested cathode geometries in ensuring essential emission of electrons from emitting structure toward anode, rather than to a back gate, was demonstrated by theoretical calculations of electron trajectories in a paper by Mammana et al. (APPLIED PHYSICS LETTERS 85 (5): 834-836 Aug. 2, 2004). When a cathode was represented by a cylinder, the electrons do not reach the gate if the emission sites are within a range of angleΘ between −45° and +45°, even if no anode field is present. Angle Θ in this context restricts an arc on a cylinder surface where emitting material can be placed. If a cathode has a rectangular profile, all electrons emitted from the cathode edge reach the gate in the absence of an anode field. In another paper by Mammana et al. (JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 22 (4): 1455-1460 July-August 2004), field distribution along a surface of cathodes with different profiles (circular and rectangular with different aspect ratios) had been calculated and regions for placement of the emitting structures were defined.
Thus, in accordance with certain embodiments consistent with the present invention, an electron emitter assembly arrangement can be provided in which there is a more efficient use of the available cathode area. In certain embodiments, gate current can be avoided. In certain embodiments, the manufacturing process can be simplified by reducing the number of processing steps. In certain embodiments, outgassing problems can be avoided due to the use of organic insulators. In certain embodiments, the capacitance between the gates and the cathodes can also be reduced, as well as avoiding the relative process complexity usually associated with the deposition of inorganic insulators. Certain embodiments provide an electric field that is symmetric with respect to a vertical plane running along the central axis of the cathode. Certain embodiments may provide an emitter assembly arrangement in which triode-mode electron emission takes place at lower bias voltage than in the current arrangements, while the ratio of electrons reaching the anode with respect to the number of electrons reaching the dielectric is reduced. In yet other embodiments, dielectric charging can be decreased.
These improvements can be achieved in accordance with certain embodiments in which an emitter assembly arrangement has at least one gate electrode, a plurality of substantially prismatic conducting cathodes placed in a parallel relation with the gate electrode and isolated from the latter by a dielectric layer, the cathodes having an aspect ratio close to one and different effective-work-function properties on the portion facing the gate and on the portion facing away from the gate, the width and height of the cathodes being comparable, i.e., the aspect ratio of the cathodes cross-section being close to one, the cross-section being substantially uniform along the length of the cathode stripes.
In accordance with certain embodiments consistent with the invention, the dielectric can be a solid dielectric layer, with the cathodes resting atop the surface of the layer. In certain embodiments, the cathodes' cross-section can be substantially trapezoidal in shape. In certain embodiments, the portion of the cathodes facing the gate can be flat. Alternatively, the portions of the cathodes facing toward the gate can be substantially cylindrical in shape. Alternatively, the cathodes can be substantially cylindrical in shape. Alternatively, the cathodes can be inserted in trenches engraved in the dielectric surface. Alternatively, the dielectric surface conformably overlays the gate surface, in a way that its cross-section presents trenches that are similar in shape to ones previously engraved in the gate. Alternatively, the cathodes can be substantially half-round in shape.
According to another feature of certain embodiments, the portion of the cathodes facing away from the gate can be coated with a stripe of low-effective-work-function material. Preferably, the gate electrode is made of a material that presents a stable oxide, such as silicon or aluminum (for example) and the dielectric layer between the cathodes and the gate being provided by the oxidation of the gate material.
Many modifications and other embodiments of the invention will come to the mind of one skilled in the art having the benefit of the teachings presented in the foregoing descriptions and the associated drawings.
One such modification involves not limiting the gate plate material to doped silicon, but employing any material which has a stable oxide, which would be produced on the plate's surface by any known process. For instance, the gate plate may be made of Aluminum, in which case the grown insulating layer would be made of anodized Aluminum oxide.
Furthermore, the invention is not limited to the insulating layer being an oxide of the gate plate material. The insulating layer may be applied by deposition over the gate plate of a different insulating material altogether.
Therefore, it is to be understood that the invention is not to be limited to the specific embodiments disclosed, and that modifications and further embodiments are intended to be included within the scope of the appended claims. While certain illustrative embodiments have been described, it is evident that many alternatives, modifications, permutations and variations will become apparent to those skilled in the art in light of the foregoing description.
This application claims priority of U.S. provisional patent application Ser. No. 60/516,004 filed Oct. 31, 2003 to Mammana, et al. which is hereby incorporated herein by reference. Part of the subject matter of this application was published by the inventors in the July/August 2004 J. Vac. Sci. Technol. A 22(4), American Vacuum Society, in a paper entitled “Field Emission Device with Back Gated Structure”, which is also hereby incorporated herein by reference.
| Number | Date | Country | |
|---|---|---|---|
| 60516004 | Oct 2003 | US |
