The present invention relates generally to a reference circuit for the generation of a reference voltage and, in particular, to a band-gap reference circuit that generates voltages and currents independent of process, voltage, and temperature.
Band-gap reference circuits are used to generate precise voltages and currents. The generated voltages and currents are independent of process, voltage, and temperature. Band-gap reference circuits are used in various analogue and digital circuits that require precise voltages or currents for operation. In particular, the generated voltage is used as a bias voltage in circuits such as Analogue to Digital (A/D) converters and constant current generators. In conventional band-gap reference circuits, a reference voltage is generated across a resistor by passing a suitable current through the resistor.
Current generators are used for generating a current that enables generation of the required reference voltage across the resistor. Current generators usually include a Proportional to Absolute Temperature (PTAT) current generator, and an Inversely Proportional to Absolute Temperature (IPTAT) current generator. The PTAT current generator generates a current that is proportional to the absolute temperature, whereas the IPTAT current generator generates a current that is inversely proportional to the absolute temperature. The currents generated by these two current generators are added to generate a current that is independent of the absolute temperature. This generated current is then passed through a resistor and the required reference voltage is generated across the resistor.
In conventional band-gap reference circuits that use the Complementary Metal Oxide Semiconductor (CMOS) technology, good quality resistors are required for current generation. Such resistors require extra mask sets, which adds to the fabrication costs of the circuit. Further, conventional band-gap reference circuits are not suitable for generation of very low reference voltage levels, such as 1 Volt and lower. Hence, the conventional circuits cannot be used in circuits made with low voltage process technologies, such as CMOS90.
Accordingly, there is a need for a band-gap reference circuit that is suitable for generation of low operational voltage levels, and that may be readily fabricated at reasonable cost.
The following detailed description of preferred embodiments of the invention will be better understood when read in conjunction with the appended drawings. The present invention is illustrated by way of example and not limited by the accompanying figures, in which like references indicate similar elements.
The detailed description in connection with the appended drawings is intended as a description of the presently preferred embodiments of the invention, and is not intended to represent the only form in which the present invention may be practiced. It is to be understood that the same or equivalent functions may be accomplished by different embodiments that are intended to be encompassed within the spirit and scope of the invention.
The present invention provides a band-gap reference circuit for voltage and current generation. The band-gap reference circuit includes three inversely proportional to absolute temperature (IPTAT) current generators that generate three respective currents. The three generated currents are added to generate a current independent of the absolute temperature. This absolute temperature independent current is passed through a resistor to generate a band-gap reference voltage across the resistor. In one embodiment, the resistor is a switched capacitor resistor.
The band-gap reference circuit of the present invention is suitable for generation of very low reference voltage levels, such as 1V and lower. Further, the band-gap reference circuit of the present invention has a relatively low fabrication cost because it uses a combination of capacitors and transistors to implement the resistors used to generate the reference voltage.
Referring now to
The first IPTAT current generator 104 generates a first current. The second IPTAT current generator 106 is connected in parallel with the first IPTAT current generator 104 and generates a second current. The third IPTAT current generator 108 is connected in series with the first and second IPTAT current generators 104 and 106 and generates a third current. An exemplary circuit for implementing the IPTAT current generators 104, 106, and 108 is described in detail, in conjunction with
The resistor 110 is connected in series with first and second IPTAT current generators 104 and 106 and in parallel with third IPTAT generator 108. As discussed in detail below, each of the first and second IPTAT current generators 104 and 106 includes a switched capacitor resistor.
In the band-gap reference circuit 102, the difference between the second and the third current generates a current that is Proportional to Absolute Temperature (PTAT). The first current generated by the first IPTAT 104 is added to a difference between the second and third currents, which generates an output current that passes through the resistor 110. A band-gap reference voltage is generated across the resistor 110 as a result of the output current passing through resistor 110. As discussed above, in one embodiment, the resistor 110 is a switched capacitor resistor. Such a switched capacitor resistor is described in detail, in conjunction with
The first NMOS transistor 202 has a drain connected to a first node 214 at a voltage VCAP, a gate connected to a first clock signal 216, and a source. The second NMOS transistor 204 has a drain connected to the first node 214, a gate connected to a second clock signal 218, and a source. The third NMOS transistor 210 has a drain connected to the source of the first NMOS transistor 202, a gate connected to the second clock signal 218, and a source connected to a reference voltage 220. The fourth NMOS transistor 212 has a drain connected to the source of the second NMOS transistor 204, a gate connected to the first clock signal 216, and a source connected to the reference voltage 220. The first capacitor 206 has a first terminal connected to the source of the first NMOS transistor 202, and a second terminal connected to the reference voltage 220. The second capacitor 208 has a first terminal connected to the source of the second NMOS transistor 204, and a second terminal connected to the reference voltage 220.
In an embodiment of the present invention, the first and second clock signals 216 and 218 are non-overlapping clock signals. The first node 214 of the switched capacitor resistor 110 receives the output current, as described in conjunction with
Similarly, when the second clock signal 218 is ON and the first clock signal 216 is OFF, the second and third NMOS transistors 204 and 210 are ON, and the first and fourth NMOS transistors 202 and 212 are OFF. As a result, the first capacitor 206 discharges and the second capacitor 208 charges.
In an embodiment of the present invention, the first and second capacitors 206 and 208 have the same capacitance value. The charging and discharging of the first and second capacitors 206 and 208 results in generating a resistive circuit, the resistance of which is calculated with the following equation:
RSC=½CFclk
where, RSC is the resistance of the switched capacitor resistor 110, C is the capacitance of the first and second capacitors 206 and 208, and Fclk is the clock frequency of the first and second clock signals 216 and 218. Exemplary values used in the present invention are a supply voltage=1.5 v, reference voltage=0 v, frequency of the clock signal=10 MHz, capacitors used in switched capacitor resistors=1.6 pF, and decoupling capacitors=13 pF.
The first PMOS transistor 304 has a source connected to a supply voltage (VDD) 322, a drain and a gate. The second PMOS transistor 306 has a source connected to the supply voltage 322, a gate connected to the gate of the first PMOS transistor 304 at a PBIAS node 324, and a drain. The third PMOS transistor 308 has a source connected to the supply voltage 322, a gate connected to the gate of the second PMOS transistor 306 at the PBIAS node 324, and a drain.
The third capacitor 310 has a first terminal connected to the supply voltage 322, and a second terminal connected to the gate of the third PMOS transistor 308. The PNP transistor 312 has an emitter connected to the drain of the first PMOS transistor 304, a base connected to a reference voltage 326, and a collector connected to the reference voltage 326. The comparator circuit 314 has a first input coupled to the emitter of the PNP transistor 312, a second input coupled to the drain of the second PMOS transistor 306, and an output connected to the gates of the first and second PMOS transistors 304 and 306 at the PBIAS node 324. In an embodiment of the present invention, the comparator circuit 314 is implemented with a differential amplifier. The output of the comparator circuit 314 provides a bias voltage to the first, second, and third PMOS transistors 304, 306, and 308.
The fourth capacitor 316 has a first terminal connected to the emitter of the PNP transistor 312, and a second terminal connected to the reference voltage 326. The fifth capacitor 318 has a first terminal connected to the drain of the second PMOS transistor 306, and a second terminal connected to the reference voltage 326. The third, fourth, and fifth capacitors 310, 316, and 318 are used as de-coupling capacitors to filter out ripples due to the switching in the switched capacitor resistor 230.
The switched capacitor resistor 320 has a first node connected to the drain of the second PMOS transistor 306, and a second node connected to the reference voltage 326. In one embodiment, the switched capacitor resistor 320 is implemented using a circuit the same as or similar to the switched capacitor resistor 110.
The IPTAT current generator 302 generates a current, which is inversely proportional to absolute temperature. The current generated by the IPTAT current generator 302 is drawn from the drain of the third PMOS transistor 308. The value of the current generated is dependent on the required and/or desired band-gap reference voltage and is controlled by an appropriate selection of values of the capacitors, supply voltage, and resistance value of the switched capacitor resistor 320. It is to be noted that each of the IPTAT current generators 104, 106, and 108 can be implemented using a circuit the same as or similar to the IPTAT current generator 302.
The first switched capacitor resistor 404 has a first node 418, and a second node 420 connected to a reference voltage 419. The first IPTAT current generator 406 has a first bias voltage at a first PBIAS node 422, and a first output node 424 connected to the first node 418. The second IPTAT current generator 408 has a second bias voltage at a second PBIAS node 426 and a second output node 428.
The first capacitor 410 has a first terminal connected to the first node 418, and a second terminal connected to the reference voltage 419. The PMOS transistor 412 has a source connected to a supply voltage (VDD) 417, a gate connected to the first PBIAS node 422, and a drain connected to the first terminal of the first capacitor 410.
The first NMOS transistor 414 has a drain connected to the drain of the PMOS transistor 412 at the first node 418, a source connected to the reference voltage 419, and a gate. The second NMOS transistor 416 has a gate connected to the gate of the first NMOS transistor 414, a source connected to the reference voltage 419, and a drain connected to the second output node 428 and to the gate of the first NMOS transistor 414.
A first output current is generated by the first IPTAT current generator 406, which is drawn from the first output node 424. A second output current is generated by the second IPTAT current generator 408, which is drawn from the second output node 428. The band-gap reference voltage is generated at the first node 418.
In an embodiment of the present invention, the IPTAT current generators 406 and 408 are similar to the IPTAT current generator 302. In an embodiment of the present invention, the first switched capacitor resistor 404 and the switched capacitor resistors used in the IPTAT current generators 406 and 408 are similar to the switched capacitor resistor shown in
The band-gap reference circuit 402 also may be used to generate precise currents. In an embodiment of the present invention, a current reference circuit is implemented with a band-gap reference circuit similar to the band-gap reference circuit 402.
The band-gap reference circuit 504 is connected between a supply voltage (VDD) 520 and a reference voltage 522. The band-gap reference circuit 504 generates a first bias voltage at a first PBIAS node 524, a second bias voltage at a second PBIAS node 526, and a third bias voltage at a NBIAS node 528. According to the present invention, the band-gap reference circuit 504 includes at least one switched capacitor resistor.
The first PMOS transistor 506 has a source connected to the supply voltage 520, a gate connected to the first PBIAS node 524, and a drain. The second PMOS transistor 508 has a source connected to the supply voltage 520, a gate connected to the second PBIAS node 526, and a drain connected to the drain of the first PMOS transistor 506. The first NMOS transistor 510 has a gate connected to the NBIAS node 528, a drain connected to the drain of the first PMOS transistor 506, and a source connected to the reference voltage 522. The second NMOS transistor 512 has a drain and a gate connected to the drain of the first PMOS transistor 506, and a source connected to the reference voltage 522. The third NMOS transistor 514 has a gate connected to the drain of the first PMOS transistor 506, a source connected to the reference voltage 522, and a drain. The third PMOS transistor 516 has a source connected to the supply voltage 520, and a drain and a gate connected to the drain of the third NMOS transistor 514. The fourth PMOS transistor 518 has a source connected to the supply voltage 520, a gate connected to the gate of the third PMOS transistor 516, and a drain. The reference current (IREF) is drawn from the drain of the fourth PMOS transistor 518.
While the various embodiments of the invention have been illustrated and described, it will be clear that the invention is not limited to these embodiments only. Numerous modifications, changes, variations, substitutions, and equivalents will be apparent to those skilled in the art, without departing from the spirit and scope of the invention, as described in the claims.
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