Claims
- 1. In a flat panel display device containing a flat, transparent substrate for growing large crystal polysilicon semiconductor films thereon, the improvement wherein said substrate is a phase separated glass consisting essentially of extremely fine-grained crystals homogeneously dispersed in a glass matrix, said phase separated glass being essentially free from alkali metal oxide, exhibiting an annealing point higher than 900.degree. C., a linear coefficient of thermal expansion over the temperature range of 25.degree.-300.degree. C. between about 30-40.times.10.sup.-7 /.degree.C., and consisting essentially, expressed in terms of mole percent on the oxide basis, of about
- ______________________________________SiO.sub.2 68-80Al.sub.2 O.sub.3 18-26BaO and/or SrO 2-6.______________________________________
Parent Case Info
This is a division of application Ser. No. 790,370, filed Oct. 23, 1985.
US Referenced Citations (4)
Divisions (1)
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Number |
Date |
Country |
| Parent |
790370 |
Oct 1985 |
|