The present invention relates to fluid ejection devices, and more particularly to a barrier feature in a fluid channel of a fluid ejection device.
Various inkjet printing arrangements include both thermally actuated printheads and mechanically actuated printheads. Thermal actuated printheads tend to use resistive elements or the like to achieve ink expulsion, while mechanically actuated printheads tend to use piezoelectric transducers or the like.
A representative thermal inkjet printhead has a plurality of thin film resistors provided on a semiconductor substrate. A barrier layer is deposited over thin film layers on the substrate. The barrier layer defines firing chambers about each of the resistors, an orifice corresponding to each firing chamber, and an entrance or fluid channel to each firing chamber. Often, ink is provided through a slot in the substrate and flows through the fluid channel to the firing chamber. Actuation of a heater resistor by a “fire signal” causes ink in the corresponding firing chamber to be heated and expelled through the corresponding orifice.
In some instances, bubbles or particles can occlude fluid flow through the fluid slot, through the fluid channel, or within the firing chamber. Print quality and resistor life may be affected by the fluid occlusion. Accordingly, there is a desire to maximize tolerance to bubbles and/or particles within the fluid ejection device.
A fluid ejection device comprising a substrate having a first surface, and a fluid ejector formed over the first surface. A top layer is formed over the first surface of the substrate and defines a chamber about the fluid ejector. The top layer defines a fluid channel that directs fluid into the chamber. In one embodiment, a barrier feature is positioned within the fluid channel, and has a height that is less than the height of the fluid channel.
Overview of a Fluid Ejection Device Embodiment
The embodiment of
In one embodiment, the substrate 115 is silicon. In various embodiments, the substrate is one of the following: single crystalline silicon, polycrystalline silicon, gallium arsenide, glass, silica, ceramics, or a semiconducting material. The various materials listed as possible substrate materials are not necessarily interchangeable and are selected depending upon the application for which they are to be used.
In the embodiment of
The thin film stack can include, in this embodiment, a conductive layer 121 formed by depositing conductive material over the layer 119. The conductive material is formed of at least one of a variety of different materials including aluminum, aluminum with about ½% copper, copper, gold, and aluminum with ½% silicon, and may be deposited by any method, such as sputtering and evaporation. The conductive layer 121 is patterned and etched to form conductive traces. After forming the conductor traces, a resistive material 125 is deposited over the etched conductive material 121. The resistive material is etched to form an ejection element 201, such as a fluid ejector, a resistor, a heating element, or a bubble generator. A variety of suitable resistive materials are known to those of skill in the art including tantalum aluminum, nickel chromium, tungsten silicon nitride, and titanium nitride, which may optionally be doped with suitable impurities such as oxygen, nitrogen, and carbon, to adjust the resistivity of the material.
The thin film stack can also include, as shown in the embodiment of
In one embodiment, a top layer 124 is deposited over the cavitation layer 129. In one embodiment, the top layer 124 is a layer comprised of a fast cross-linking polymer such as photoimagable epoxy (such as SU8 developed by IBM), photoimagable polymer or photosensitive silicone dielectrics, such as SINR-3010 manufactured by ShinEtsu™. In another embodiment, the top layer 124 is made of a blend of organic polymers which is substantially inert to the corrosive action of ink. Polymers suitable for this purpose include products sold under the trademarks VACREL and RISTON by E. I. DuPont de Nemours and Co. of Wilmington, Del.
An example of a printhead is illustrated at page 44 of the Hewlett-Packard Journal of February 1994. Further examples of printheads are set forth in commonly assigned U.S. Pat. No. 4,719,477, U.S. Pat. No. 5,317,346, and U.S. Pat. No. 6,162,589. Embodiments of the present invention include having any number and type of layers formed or deposited over the substrate, depending upon the application.
In a particular embodiment, the top layer 124 defines a firing chamber 202 where fluid is heated by the corresponding ejection element 201 and defines a nozzle orifice 105 through which the heated fluid is ejected. Fluid flows through the slot 110 and into the firing chamber 202 via channels 203 defined by the top layer 124. Flow of a current or a “fire signal” through the resistor causes fluid in the corresponding firing chamber to be heated and expelled through the corresponding nozzle 105. In another embodiment, an orifice layer defining the orifices 105 is formed over the top layer 124.
In the embodiment illustrated in
In this embodiment shown, the fluid channel 203 has a height defined from a floor or bottom 204a of layer 124, to a ceiling (or top surface) 204b of the fluid channel. The fluid channel height is in a range of about 20 to 30 microns. The fluid channel 203 has a width defined from one side wall 204c of the fluid channel to an opposite side wall 204c of the fluid channel. In embodiments where the channel tapers either away from or toward the chamber, the width varies therealong. The fluid channel width is in a range of about 15 to 40 microns. The fluid channel length is in a range of about 20 to 80 microns. In another embodiment, these fluid channel dimensions are scaled down in size for femtoliter size drops, rather than picoliter size drops.
In this embodiment, within the fluid channel 203 is a barrier feature 300. In another embodiment, the barrier feature is one of a barrier island, a short platform, and a stalagmite. In yet another embodiment, the barrier feature acts as a bubble direction disruptor. In the embodiment shown in
In one embodiment, the barrier feature is formed of the same material as the top layer 124. In one embodiment, the barrier feature 300 on the floor 204a of the fluid channel is formed with the first layer 205 in the same process as described herein. In this embodiment, the barrier feature 300 has the same height as the first layer 205. In this embodiment, the first layer 205 at least partially defines the firing chamber 202 and fluid channel, and the second layer 207 defines the ceiling 204b of the fluid channel, the remainder of the firing chamber 202, as well as the nozzle 105.
In another embodiment, the barrier feature 300 is formed of a different material than the top layer 124. For instance, the barrier feature 300 may be formed of any material that is capable of being planarized using Chemical-Mechanical Polishing (CMP). For example, other polymers, an oxide and a nitride are alternative materials used in forming the barrier feature of similar heights. However, alternative deposition methods may be used in depositing these alternative materials.
Barrier Feature Embodiments
Various embodiments of the barrier feature(s) in the fluid channel 203 are shown in the following figures. In the plan view of these embodiments, the nozzle layer (207, 208) above the fluid channel is not illustrated for ease of viewing of these particular barrier feature(s).
In the plan view embodiment of
In this embodiment, a distance between the barrier features 302, 304 and side walls 204c of the fluid channel converge towards the chamber. Further, in this embodiment shown, the side walls 204c generally converge towards the chamber. In the embodiment shown, the fluid channel 203 tapers in toward the firing chamber, such that the fluid channel cross-sectional area increases moving away from the chamber 202. As shown in the embodiment of
An area that is open to flow includes the space within the fluid channel other than the barrier features. In this embodiment shown, the percentage of fluid channel that is open to flow is about 90%, assuming no bubbles or particles. In one embodiment, the embodiment of
In the plan view embodiment of
In this embodiment shown, the side walls 204c generally converge towards the chamber. Further, in this embodiment, a distance between the barrier features 306, 308 and side walls 204c of the fluid channel generally converge towards the chamber.
In the embodiment shown, a bubble or particle 200 lies between the barrier features 306, 308 and a ceiling 204b of the fluid channel. The largest bubble in this embodiment has a diameter that is larger than the distance between the two barrier features. This bubble is positioned against the ceiling 204b of the fluid channel, generally above and in between the barrier features 306 and 308. In one embodiment, the size of the maximum bubble 200 may range up to about 6 microns in diameter depending upon the size of the barrier features and fluid channel. In this embodiment, the percentage of fluid channel that is open to flow (assuming no bubbles or particles therein) is about 60 to 70%.
Methods of Forming Floor and Ceiling Barrier Feature Embodiments
More particularly, steps 400 through steps 440 are illustrated in the embodiment of FIG. 5A. Steps 450 and 460 are illustrated in the embodiment of FIG. 5B. In the embodiment described at step 400, thin films forming the fluid ejectors are deposited over the substrate 115. In the embodiment described at step 410, the primer layer 205 is spun over the thin films, and patterned to form the barrier feature(s) 300. In the embodiment shown in FIG. 5A and described at step 420, the chamber layer 206 is spun over the primer layer and patterned to form the inner or side walls of the firing chamber and fluid channel. In the embodiment described at step 430, material 444, such as photoresist, is deposited within the inner walls of the firing chamber and fluid channel. In the embodiment described at step 440, the photoresist 444 is planarized with CMP, and then patterned and partially developed to form a trench 445 in the photoresist 444. In one embodiment, after planarizing the resist with CMP, the resist is uncured enough that it can still be imaged. In this embodiment, a trench is patterned in the resist and exposed to form the trench. In an additional embodiment, the photoresist is a positive photoresist, wherein the positive photoresist is partially exposed, and a fraction of the full thickness of the resist is removed to define the trench. In another embodiment, the positive photoresist is fully exposed, and the develop is timed to remove a part of the full thickness, such that the trench 445 is formed within the photoresist. In yet another embodiment, the material 444 can include any sacrificial material. In this embodiment, after planarizing the sacrificial material with CMP, the sacrificial material is unimagable. In this embodiment, a mask is positioned over the sacrificial material 444, and exposed and patterned. In this embodiment, the trench 445 is formed by a wet etch, a dry etch, or ash out.
In the embodiment described at step 450 of FIG. 5C and shown in
In one embodiment, layers 205, 206, and 208 are formed of different materials. In this embodiment, layers 205, 206, and 208 are formed of the same material. In this embodiment, layer 205 and floor barrier feature 300 have a thickness of about 2 to 6 microns, preferably 6 microns. The layer 206 has a height in the range of about 15 to 20 microns. The layer 208 has a height in the range of about 5 to 15 microns. The ceiling barrier feature 301 has a thickness of about 2 to 6 microns, preferably 6 microns.
Floor and Ceiling Barrier Feature Embodiments
Embodiments of
In the plan view embodiment of
In this embodiment, the floor barrier features 312 and 316 taper away from the chamber, such that bases of the trapezoid are near the firing chamber. Barrier features 310 and 318 taper toward the chamber, such that bases of these trapezoids are near the entrance to the fluid channel, in this embodiment.
In this embodiment, ceiling barrier features 310, 314, and 318 protrude from the ceiling 204b of the fluid channel. These barrier features 310, 314, and 318 are substantially the same height. In one embodiment, the thickness or height of these barrier features 310, 314, and 318 are about 2 to 6 microns, preferably 6 microns. In the embodiment shown, the height of the floor barrier features together with a height of the ceiling barrier features is less than the height of the fluid channel. In this embodiment, the channel height is greater than the sum of the heights of the ceiling and floor barrier features, such that there is a height of empty channel space between the ceiling and floor barrier features.
An area that is open to flow includes the space within the fluid channel other than the barrier features. In this embodiment, the percentage of fluid channel that is open to flow (assuming no bubbles or particles) is about 50%.
In one embodiment, a bubble or particle 200 lies between the floor barrier features 312, 316 and ceiling barrier features 310, 314, 318. The diameter of the largest bubble 200 in this embodiment is slightly larger than the height of the empty channel space in the embodiment shown. This largest bubble 200 is positioned between a floor barrier feature and adjacent ceiling barrier features, or in between a ceiling barrier feature and adjacent floor barrier features. In one embodiment, the maximum bubble size is greater than the channel height minus the sum of the thicknesses of the ceiling and floor barrier features. In one embodiment, the size of the maximum bubble 200 may range up to about 8 microns in diameter.
In the plan view embodiment of
In this embodiment, ceiling barrier feature 322 protrudes from the ceiling 204b of the fluid channel. In one embodiment, the thickness or height of barrier feature 322 is about 2 to 6 microns. In this embodiment, the channel height is less than the sum of the heights or thicknesses of the ceiling and floor barrier features, such that the ceiling and floor barrier features overlap. The height of the first barrier feature together with a height of the second barrier feature is greater than the height of the fluid channel.
In this embodiment, the percentage of fluid channel that is open to flow (assuming no bubbles or particles) is about 40%. In this embodiment, the bubble or particle 200 lies between the barrier features and the ceiling and side walls of the fluid channel. In the embodiment shown, the maximum bubble is the difference between the barrier feature height, and the ceiling or the floor of the fluid channel. In one embodiment, the size of the maximum bubble 200 may range from about 8 microns in diameter.
In the plan view embodiment of
These barrier features each have a length and a width comparable to the range in previous embodiments. These barrier features have a smaller width than the barrier features of the embodiment of FIG. 6A.
In this embodiment, ceiling barrier features 328 and 332 protrude from the ceiling 204b of the fluid channel. These barrier features 328 and 332 are substantially the same height. In one embodiment, the thickness or height of these barrier features 328 and 332 are about 2 to 6 microns, preferably 6 microns. In this embodiment, the channel height is less than the sum of the heights or thicknesses of the ceiling and floor barrier features, such that the ceiling and floor barrier features overlap.
An area that is open to flow includes the space within the fluid channel other than the barrier features. In this embodiment, the percentage of fluid channel that is open to flow (assuming no bubbles or particles) is about 40%.
In this embodiment, the bubble or particle 200 lies between the barrier features and the ceiling and side walls of the fluid channel. In the embodiment shown, the maximum bubble is the difference between the barrier feature height, and the ceiling or the floor of the fluid channel. The diameter of the largest bubble 200 in this embodiment is substantially the distance between adjacent barrier features, or the distance between the barrier feature and the top layer. In one embodiment, the size of the maximum bubble 200 may be up to about 5 microns in diameter.
Barrier features in these embodiments of the present invention can be convergent relative to the firing chamber to move the bubble away from the chamber as shown and described in
Reverse Taper Barrier Feature Embodiments
Embodiments of
In the plan view embodiment of
In the embodiment shown, the bubble or particle 200 lies between the barrier feature 340 and the ceiling 204b of the fluid channel. The largest bubble in this embodiment has a diameter that is larger than the distance between a top surface of the barrier feature and the ceiling. In one embodiment, the size of the maximum bubble 200 may range up to about 6 microns in diameter depending upon the size of the barrier feature and fluid channel. In this embodiment, the percentage of fluid channel that is open to flow (assuming no bubbles or particles therein) is about 60 to 70%.
In the plan view embodiment of
In this embodiment shown, the ceiling barrier feature 354 is positioned in between features 350 and 357. The ceiling barrier feature 354 is generally trapezoidal, wherein the base of the trapezoid is near the end of the fluid channel which is adjacent the firing chamber, in this embodiment. In other embodiments, the base of the trapezoid is adjacent the fluid channel entrance, or the barrier feature 354 is substantially rectangular shaped.
In this embodiment shown, the side walls 204c of the fluid channel generally diverge towards the chamber. Further in this embodiment, the distance between the barrier features 350 and 357, and their respective side walls 204c diverge towards the chamber, such that bubble 200 moves toward the chamber. Also in this embodiment, the distance between the barrier feature 354, and the barrier features 350 and 357 diverges towards the chamber, such that bubble 200 moves toward the chamber.
The ceiling barrier feature 354 has a first portion 356 and a second portion 355, in the embodiment shown in FIG. 10B. In one embodiment, the first portion 356 corresponds to and is formed in the same process as the layer 208, as described above. In the embodiment shown, the second portion 355 corresponds to and is formed in the same process as the layer 206, and thus, corresponds to the second portions 352, 359. In one embodiment, the layer 206, with the second portions 352, 355, and 359, are formed with a lost wax process such that the second portion 355 is resting on sacrificial material. After portion 356, with layer 208, is formed and coupled to portion 355, the sacrificial material is removed.
The largest bubble in this embodiment has a diameter that is larger than the distance between an exposed surface of the barrier feature and either the ceiling, floor, or side walls of the channel. In one embodiment, the size of the maximum bubble 200 may range up to about 6 microns in diameter depending upon the size of the barrier feature and fluid channel. In this embodiment, the percentage of fluid channel that is open to flow (assuming no bubbles or particles therein) is about 40%.
In the embodiment shown in
In this embodiment shown, the side walls 204c of the fluid channel generally converge towards the chamber. Further in this embodiment, the distance between the barrier features 360, 364, and 368, and their respective side walls 204c diverge towards the chamber, such that bubble 200 moves toward the chamber.
The barrier feature 364 is wider than the barrier features 360 and 368, in the embodiment shown. The barrier features 360 and 368 have about the same width, in this embodiment. As shown in this embodiment, at least two edges of the barrier feature 364 are aligned with feature 360 and with feature 368, such that these respective edges are co-planar. The barrier features 360 and 368 are off-set from each other such that only one edge of the barrier feature 360 and only one edge of the barrier feature 369 (such as the base edges) are aligned, in this embodiment. The feature 360 is closer to one side wall 204c, while the feature 368 is closer to the opposite side wall 204c, as shown in this embodiment.
In the embodiment shown, each triangular shaped barrier feature 360, 364, and 368 has a center point based on the cross-section shown in FIG. 11B. Because the features 360, 364, and 368 are off-set or staggered relative to each other, the center points of the features are also offset. In one embodiment, the barrier features 360, 364, and 368 are integral.
The largest bubble in this embodiment has a diameter that is larger than the distance between an exposed surface of one of the barrier features and either the ceiling, floor, or side walls of the channel. In one embodiment, the size of the maximum bubble 200 may range up to about 6 microns in diameter depending upon the size of the barrier feature and fluid channel. In this embodiment, the percentage of fluid channel that is open to flow (assuming no bubbles or particles therein) is about 20 to 40%.
In several of the embodiments of the present invention, the barrier feature provides particle tolerance and/or bubble tolerance. The barrier feature in embodiments of the present invention minimizes crosstalk in the fluid channel.
It is therefore to be understood that this invention may be practiced otherwise than as specifically described. For example, the present invention is not limited to thermally actuated fluid ejection devices, but may also include, for example, piezoelectric activated fluid ejection devices, and other mechanically actuated printheads, as well as other fluid ejection devices. Thus, the present embodiments of the invention should be considered in all respects as illustrative and not restrictive, the scope of the invention to be indicated by the appended claims rather than the foregoing description. Where the claims recite “a” or “a first” element of the equivalent thereof, such claims should be understood to include incorporation of one or more such elements, neither requiring nor excluding two or more such elements.
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