Patent Application
20100193412
None.
Not Applicable.
1. Field of the Invention
The present invention relates to an apparatus for bifurcating a light beam between the visible light spectrum and the near infrared light spectrum, particularly for separating reflected light between the visible light spectrum and the near infrared light spectrum for determination of multiple characteristics of product in a product scanning system. This invention also pertains to sorting machines that optically sort or separate nonstandard fungible objects from standard objects as they pass a viewing station by viewing such objects in at least two different wavelength spectrums and particularly to such sorting machines utilizing detector elements comprised of two or more different photo-sensitive devices and to the optical detection system used therein.
2. Description of the Related Art
A typical sorting machine of the type with which the present invention is used is a high-speed sorting machine used for sorting small particles, including fungible particles in the food and pharmaceutical industries. However the invention may also be used in conveyor sorting machines or for examination of flowing solid materials.
For example, individual rice grains may be sorted in a gravity-fed sorter to separate grains selected as “substandard.” In the art, “substandard” may apply to a grain having any undesirable characteristic, including color, shape, size or breakage, or any other characteristic not within the limits for acceptable particles for a particular sorting. Alternative feed systems, such as belt driven conveyors, are also well-known in the art. Alternatively, certain rarer particles may be desirable and therefore deflected from the flow of the less rare and less desirable remaining particles.
Sorting machines may employ two or more optical sensors to differentiate based on color hues, size, moisture content or other characteristics as determined in radiation bands, which may be outside the visible color spectrum. When such sorting is accomplished by use of two radiation bands, the sorting procedure is referred to as bichromatic sorting.
Optical sorting machines of the type generally described above employ optical sensors that include multiple photodetectors, such as a charged-couple device and photodiode arrays. The photodetectors are positioned to observe the illuminated product stream through a light-penetrating window. The stream typically passes between an optical sensor and a background having a color shade that matches the product stream in standard color or shade so that only a variation in a product color or shade causes a detection event. The illumination is from one or more light sources directed at the product stream to cause standard reflectivity from standard products in the radiation bands being observed and to cause nonstandard reflectivity from nonstandard products in those bands.
Such sorting machines also include one or more ejector mechanisms located downstream of the sensor or sensors with multiple nozzles associated with one or more valves actuated by an electrical signal coordinated with sensor detection. When a particle having or lacking selected criteria is detected, an electrical signal is produced to actuate the valve of the ejector nozzle associated with the predicted location of the selected particle as the selected particle passes the ejector. The time elapsed between the selected particle passing the sensor or sensors and the selected particle being ejected is minimal to limit possible vertical and/or horizontal deflection of the selected particle upon contact with non-selected particles. Each ejector is therefore normally located as close as possible to the plane at which the optical sensor or sensors reviews the passing particles, typically referred to as the scan line, ideally being just downstream therefrom and closely adjacent thereto.
It is therefore, a principle object of the present invention to provide a system which permits bichromatic sorting wherein the system splits light into two spectrums to separate cameras, specifically detector chips.
It is a further object of the present invention to provide that the two detector chips are not integrated with a lens.
It is a further object of the present invention to provide that the detector chips are not stacked atop each other but are rather adjacent.
It is a further object of the present invention to provide a beam splitter that divides the light reflected from product between visible light spectrum and the near-infrared light spectrum.
It is a farther object of the present invention to provide a beam splitter that does not require significant space within the sorting apparatus.
It is an advantage of the present invention to provide a beam splitter which separates visible light and the near-infrared light with minimal material and in minimal volume and which directs a first radiation band to a first photodetector while permitting the second radiation band to pass through the beam splitter to impinge on a second photodetector.
It is a further advantage to locate the photodetectors parallel to each other, and somewhat offset along the optic axis, such that both chips can be integrated within one hermetic package wherein the path length of the two bands in glass are approximately the same.
The foregoing objects and advantages are achieved through use of a beam splitter composed of indium tin oxide (ITO) selected to exhibit dielectric behavior in the VIS/NIR (ie high transmission & low reflection) and metallic behavior in the NIR band (ie low transmission & high reflection). Commercially-available ITO, typically used for ground planes in liquid crystal displays, exhibits high visible transmittance but does not exhibit high NIR reflectance. The ITO is then applied to a transparent material, preferably at a right angle to the plane on which the two photodetectors lie. The ITO coating splits the light beam into broad wavelength regions of the visible light spectrum and near-infrared spectrum by reflecting light in the near-infrared spectrum to a first photodetector, which may be via a mirror, while permitting light in the visible spectrum to pass through to a second photodetector. The first photodetector may be an indium gallium arsenide (InGaAs) photodiode array (PDA). The second photodetector may be a charge-coupled device (CCD). As a result of such beam splitter, the first and second photodetectors may be placed in parallel.
Uses of ITO have traditionally ranged from transparent heating elements of aircraft and car windows, antistatic coatings over electronic instrument display panels, heat reflecting mirrors, antireflection coatings and even in high temperature gas sensors. Early electro-optic devices using ITO include CCD arrays, liquid crystal displays and as transparent electrodes for various display devices. More recently, ITO has been used as a transparent contact in advanced optoelectronic devices such as solar cells, light emitting and photo diodes, phototransistors and lasers. Such uses of ITO have not, however, included separating light waves between the visible and near-infrared light spectrums to permit passage of light in the visible light spectrum while redirecting the light in the near-infrared light spectrum. Additionally ITO has never been used as a beam splitter for the purpose of separating light between visible light and near-infrared light for focusing on separate photodetectors. Finally ITO has never been used as a beam splitter for the purpose of separating light between two bands on separate photodetectors for sorting of product.
A key innovation of this structure is the ability to provide this reflected and transmitted performance with a single immersed layer. Typical thin films made of multiple dielectric layers exhibit erratic spectral oscillations at high angles of incidence when immersed between layers of glass.
The foregoing and other objectives, features, and advantages of the invention will be more readily understood upon consideration of the following detailed description of the invention, taken in conjunction with the accompanying drawings.
So that the manner in which the described features, advantages and objects of the invention, as well as others which will become apparent, are attained and can be understood in detail, more particular description of the invention briefly summarized above may be had by reference to the embodiments thereof that are illustrated in the drawings, which drawings form a part of this specification. It is to be noted, however, that the appended drawings illustrate only a typical preferred embodiment of the invention and are therefore not to be considered limiting of its scope as the invention may admit to other equally effective embodiments.
Referring to the
Moreover the present invention may be used with any system whereby particles 17 are moved along a chute or belt.
An optical sensor 20, described more fully below, is located toward the bottom of the slide 12. As particles 17 pass the optical sensor 20, any nonstandard particles are sensed or detected. It will be appreciated that such sensing or detection requires the nonstandard products to be distinguished from the standard particles and from any background. Typically, a nonstandard particle, such as substandard cereal grain, is detectable on the basis of being darker or lighter or of a different color or hue from an acceptable range of darkness, lightness, or color predetermined for standard or acceptable items. This identification is accomplished simultaneously within two separated spectral ranges. When the nonstandard particle is identified, an electrical signal is produced that results in a deflection of the nonstandard particle sensed from the stream of particles 17.
Referring to
As depicted in
ITO coatings are typically identified with two numbers—resistance in ohms per square and thickness. These two numbers actually specify the resistivity, ρ, since ρ=Res*d, where Res is the materials resistance and d is the material distance. Resistivity is the inverse of conductivity, and is the material property of interest in specifying a specific ITO film. By selecting the proper resistivity, the ITO layer exhibits the necessary dielectric behavior in the 400-900 nm band, i.e. high transmittance, T, of incident light and metallic behavior in the 1200-1700 nm band, i.e. high reflectance, R of incident light. In the preferred embodiment the dielectric behavior provides transmittance of at least 60% of impinging light in the 400-900 nm band, while the metallic behavior provides reflectance of at least 50% of impinging light in the 1200-1700 nm band. Based on such resistivity, ITO thickness and corresponding resistance may be determined. It has been determined that an immersed ITO with a resistivity of approximately 155 μΩcm, as a compromise between high visible transmittance (for the CCD detector array) and high infrared reflectance (for the PDA detector array), provides the beam-splitting properties sought. The desired range of resistivity should not be below 150 μΩcm and should not be above 160 μΩcm. Resistivity below 129 μΩcm or above 165 μΩcm produces unacceptable results.
Typical thin films made of multiple dielectric layers exhibit erratic spectral oscillations at high angles of incidence when immersed between layers of glass. Modeling the optical properties of ITO permits identification of the proper resistivity of a single dielectric layer so such undesirable spectral oscillations may be avoided. The optical properties of ITO can be modeled with the Drude free electron model if the relaxation time is frequency dependent. The Drude formulism expresses the dielectric function, ε(ω), in terms of three quantities:
ε(ω)=ε∞−ωp2(1/(ω2+iω/τ)),
where ε∞ is the high frequency dielectric constant, ωp is the plasma frequency, and τ is the relaxation (or electronic scattering) time. The plasma frequency can be further expressed as ωp2=ne2/mεo (where n is carrier concentration, e is electronic charge, m is effective mass, and εo is the capacivity of free space). Since resistivity=ρ=m/ne2τ, a higher carrier concentration leads to lower resistivity and a higher plasma frequency.
The real (n) and imaginary (k) parts of the refractive index can be calculated from the dielectric function via:
ε(ω)1/2=n(ω)+ik(ω)
For sample resistivities of 129 μΩcm, 165 μΩcm, and 235 μΩcm, ε(ω) is computed, followed by computation of n(ω) for sample resistivities of 129 μΩcm (41), 165 μΩcm (42), and 235 μΩcm (43) and k(ω) for sample resistivities of 129 μΩcm (44), 165 μΩcm (45), and 235 μΩcm (46). The results are plotted in
The n and k curves may then be used to calculate the reflected (R) and transmitted (T) intensity, as functions of both wavelength and angle of incidence, of the glass/ITO/glass structure depicted in
R=[(r1+r0e(−2iφ)/(1+r1r0e(−2iφ))]2
T=[(t1t0e(−1φ))/(1+r1r0e(−2iφ))]2 ,
where r1, r0, t1, and t0 are complex terms given by the Fresnel equations, which describe the reflection and transmission of electromagnetic waves at an interface. The following gives terms for s-type and p-type polarization at the first ITO surface. For this geometry, terms for the second ITO surface are written by transposing θ and θ′.
P-polarized light is linearly polarized light having an electric field vector that lies in a plane formed by the axis of light propagation and the line normal to a sample surface. S-polarized light is linearly polarized light that runs perpendicularly to this plane. The complex (including loss) phase factor φ is given by φ=(2π/λ)(n+ik)d cos(θ′), where λ is the wavelength and d is the ITO layer thickness. The angles θ and θ′ are related by Snell's equation: nglass sin(θ)=(n+ik) sin(θ′), where nglass is the real refractive index of the cube surrounding the ITO layer.
To perform these calculations, the angle of incidence θ, which is related to the external ray angles in
As shown in
In the preferred embodiment, the wavelength-selective material 24, the first transparent triangular prism 26, the second transparent triangular prism 27, and the reflector 28 are attached to the outside of a single hermetically-sealed housing containing the photodetectors 21 and 22.
The terms and expressions which have been employed in the foregoing specification are used therein as terms of description and not of limitation, and there is no intention, in the use of such terms and expressions, of excluding equivalents of the features shown and described or portions thereof.
