Claims
- 1. A method for driving a liquid crystal device comprising a first substrate having a plurality of thin film transistors disposed in a matrix form, a gate line provided at every line of the matrix to connect commonly gates of the thin film transistors, a source line provided at every row of the matrix to connect commonly sources of the thin film transistors, a plurality of first electrodes which connect with every drain of the thin film transistors and serve as a plurality of picture elements, and for every line of the matrix an electroconductive film insulated from the gates and serving as counterelectrodes of respective capacitors each formed of an insulating film disposed between the respective electroconductive film and the first electrode thereof, the gate lines and the electroconductive films being arranged in a pattern such that the gate lines alternate with the electroconductive films, a second substrate having a second electrode opposed to the electrodes serving as picture elements, and a liquid crystal disposed between the first substrate and the second substrate, which method comprises:
- (a) applying a driving signal to the gate lines and source lines in accordance with a line-sequential system,
- (b) applying a bias voltage lower than a threshold voltage to a terminal of the electroconductive film serving as a counterelectrode of the capacitor, and
- (c) changing the bias voltage.
- 2. A method according to claim 1, wherein the bias voltage is changed in accordance with a change in temperature.
- 3. A method according to claim 1, wherein the bias voltage is changed in accordance with control of display brightness.
- 4. A method according to claim 1, wherein the capacitor is electrically connected independently to every electrode serving as a picture element, and wherein the electroconductive film serving as a counter electrode of the capacitor is connected to a common terminal.
- 5. A method according to claim 1, wherein the electroconductive film serving as the counterelectrode of the capacitor is formed directly on the first substrate.
- 6. A method according to claim 1, wherein the gate line is formed directly on the first substrate.
Priority Claims (4)
Number |
Date |
Country |
Kind |
55-43101 |
Apr 1980 |
JPX |
|
55-44461 |
Apr 1980 |
JPX |
|
55-45941 |
Apr 1980 |
JPX |
|
55-66238 |
May 1980 |
JPX |
|
Parent Case Info
This application is a continuation of Ser. No. 632,024 filed July 18, 1984, now abandoned, which is a divisional of Ser. No. 547,443, filed Oct. 31, 1983, now U.S. Pat. No. 4,470,667, which is a continuation of Ser. No. 246,161, filed Mar. 23, 1981, now abandoned.
US Referenced Citations (15)
Non-Patent Literature Citations (2)
Entry |
Hayama et al., "Amorphous-Silicon Thin-Film Metal-Oxide-Semiconductor Transistors", Appl. Phys. Lett. 36(9) (May 1, 1980) American Institute of Physics. |
Brody et al. "A 6.times.6 Inch, 20 Lines-Per-Inch, Liquid Crystal Display Panel", IEEE Transactions on Electron Devices, vol. Ed.-20, No. 11, Nov. 1973. |
Divisions (1)
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Number |
Date |
Country |
Parent |
547443 |
Oct 1983 |
|
Continuations (2)
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Number |
Date |
Country |
Parent |
632024 |
Jul 1984 |
|
Parent |
246161 |
Mar 1981 |
|