Claims
- 1. A method of minimizing transistor by noise, the field effect transistor having a gate, source and drain comprising setting the quiescent bias point of the field effect transistor by setting the gate to source voltage and the drain to source voltage to operate the transistor in the current saturation region with an electric field in a drain depletion zone such that the carrier velocity is in the partial carrier velocity saturation zone to provide a carrier drift velocity approximately proportional to the square root of the electric field to distort the output conductance functional with current to substantially match the transconductance functional with current to substantially match the transconductance functional with current, thereby linearizing the voltage transfer function of the device, defined A.sub.v =g.sub.m /g.sub.o, where g.sub.m is the transconductance and go is the output conductance of the field effect transistor.
- 2. The method of claim 1 wherein the average electric field in the drain depletion zone is set substantially in the center of the partial carrier velocity saturation zone to minimize the distortion of the linearizing bias condition with changes in voltage and current about their respective quiescent bias points.
- 3. A method of minimizing cross modulation of the transconductance of a field effect transistor by noise, the field effect transistor having a gate, source and drain comprising setting the quiescent values of the gate to source and the drain to source voltages of the transistor so that the drain current dependence of the output conductance go of the transistor substantially matches the drain current dependence of the transconductance g.sub.m of the transistor. whereby the voltage transfer function A.sub.v =g.sub.m /g.sub.o is substantially independent of drain current, thereby reducing the modulation of the transconductance by the drain noise voltage.
- 4. A field effect transistor having improved transconductance coherence comprising a field effect transistor having a source, gate and drain, and a biasing means coupled to said field effect transistor to determine the quiescent values of the gate to source voltage and the drain to source voltage on said transistor, said biasing means being a means for setting the gate to source voltage and the drain to source voltage to operate the transistor in the current saturation region with an electric field in the drain depletion zone such that the carrier velocity is in the partial carrier velocity saturation zone to provide a carrier drift velocity approximately proportional to the square root of the electric field to distort the output conductance functional with current to substantially match the transconductance functional with current, thereby linearizing the voltage transfer function of the device, defined A.sub.v =g.sub.m /g.sub.o where g.sub.m is the transconductance and g.sub.o is the output conductance of the field effect transistor.
- 5. A field effect transistor having improved transconductance coherence comprising a transistor having a source, gate and drain, and a biasing means coupled to said field effect transistor to determine the quiescent values of the gate to source voltage and the drain to source voltage on said transistor, said biasing means being a means for setting the quiescent values of the gate to source and the drain to source voltage of the transistor so that the drain current dependence on the output conductance (g.sub.o) of the transistor substantially matches the drain current dependence of the transconductance (g.sub.m) of the transistor, whereby the voltage transfer function A.sub.v =g.sub.m /g.sub.o is substantially independent of drain current.
Parent Case Info
This application is a continuation of application Ser. No. 170,124 filed July 18, 1980, now abandoned, which application was a continuation-in-part of application Ser. No. 004,572, filed Jan. 18, 1979, now U.S. Pat. No. 4,241,316.
US Referenced Citations (4)
Non-Patent Literature Citations (1)
Entry |
Watson, "Biasing Considerations in F.E.T. Amplifier Stages", Electronic Engineering, Nov. 1968, pp. 600-605. |
Continuations (1)
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Number |
Date |
Country |
Parent |
170124 |
Jul 1980 |
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Continuation in Parts (1)
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Number |
Date |
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Parent |
004572 |
Jan 1979 |
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