Biocompatible copper-based single-crystal shape memory alloys

Information

  • Patent Grant
  • 8556969
  • Patent Number
    8,556,969
  • Date Filed
    Monday, December 1, 2008
    16 years ago
  • Date Issued
    Tuesday, October 15, 2013
    11 years ago
Abstract
We describe herein biocompatible single crystal Cu-based shape memory alloys (SMAs). In particular, we show biocompatibility based on MEM elution cell cytotoxicity, ISO intramuscular implant, and hemo-compatibility tests producing negative cytotoxic results. This biocompatibility may be attributed to the formation of a durable oxide surface layer analogous to the titanium oxide layer that inhibits body fluid reaction to titanium nickel alloys, and/or the non-existence of crystal domain boundaries may inhibit corrosive chemical attack. Methods for controlling the formation of the protective aluminum oxide layer are also described, as are devices including such biocompatible single crystal copper-based SMAs.
Description
BACKGROUND OF THE INVENTION

1. Field of the Invention


The invention is directed to an improved method of making and using copper-based single crystal shape memory alloys (SMAs). In particular, this invention is directed to SMAs of CuAlNi that are biocompatible.


2. Background


Certain SMAs are used in medical devices, including implants. In particular, nickel titanium SMAs such as “Nitinol” have become widely known as a biocompatible shape memory alloy. Nitinol is a compound of nickel and titanium, and has become used extensively in medical and similar applications because it is more flexible than steel. Another class of SMAs, the copper-aluminum-nickel superelastic alloys also exhibit large shape recovery and would be useful in medical devices were it not for the widespread belief that their large copper content is cytotoxic, and would result in deleterious interaction with living tissue, particularly in long-term embodiments.


SMAs including copper are believed to be cytotoxic because copper is widely accepted as a cytotoxic metal. Copper is among the more frequently reported metals with which patients are poisoned, and routinely ranks third (behind lead and arsenic) in non-medicinal metal exposures reported to US Poison Control Centers. See, e.g., Goldfrank's Toxicologic Emergencies (7th Edition), Chapter 82C, “Copper,” by Lewis S. Nelson (2002: McGraw-Hill).


The cytotoxicity of copper-based shape memory alloys, and particularly single-crystal copper-based shape memory alloys is well documented. The prior art generally teaches away from using exposed single-crystal Cu-based alloys because of this presumed cytotoxicity. For example, Yahia et al. (Yahia, Manceur, and Chaffraix, “Bioperformance of shape memory alloy single crystals”, Bio-Medical Materials and Engineering 16:101-118 (2006)) discusses the presumed cytotoxicity of copper-based single-crystal alloys. Even as recently as 2008, copper-based single-crystal alloys are presumed to be cytotoxic. For example, Creuziger and Crone, (“Initial transformation around a notch tip in CuAlNi: Experiment and modeling,” Acta Materialia, (2008) 56:518-526).


However, copper-based SMAs may be extremely useful. Superelastic single crystal CuAlNi is extraordinarily flexible, even compared to other SMAs (e.g., Ti-Ni alloys and Fe-based alloys). In particular, single crystal CuAlNi alloys may have properties that are highly desirable. For example, a single crystal CuAlNi material may have a strain-recovery that is nearly 10percent strain, which can be described as ‘hyperelastic’ (hyperelastic behavior is described in U.S. patent application Ser. No. 10/588,413, herein incorporated by reference in its entirety). Thus, while shape memory alloys transform from one solid crystal structure to another, and are capable of energy storage at greater densities than elastic materials, in hyperelastic transformations, the energy is absorbed and released at nearly constant force, so that constant acceleration is attainable. Many medical procedures would benefit from improved flexibility, for example, archwires for orthodontistry, guidewires for catheters, and clot retrievers for intracranial and cardiovascular intervention. However, each of these applications requires material that can be exposed to tissues and/or the blood stream without causing toxic damage.


To date, however, virtually nothing is known about the biocompatibility of copper-based SMAs, beyond the assumption in the art that such materials are cytotoxic because of their high copper content, making them unsuitable for biological (e.g., implanted or chronic) use.


We show here that single-crystal copper-aluminum-nickel SMAs may be prepared so that they are biocompatible. Results of MEM elution cell cytotoxicity, ISO intramuscular implant, and hemo-compatibility tests were performed to show that CuAlNi alloys can be fully biocompatible. Copper-aluminum-nickel (or copper-aluminum manganese or beryllium) may be made biocompatible by the formation of a durable oxide surface layer analogous to the titanium oxide layer that inhibits body fluid reaction to titanium nickel alloys. The oxide layer may be made durable and capable of withstanding implantation or biological use.


SUMMARY OF THE INVENTION

Described herein are methods of forming biocompatible shape memory alloys (SMA). In general, these methods include forming a single crystal copper-based (e.g., copper-aluminum) shape memory alloy, and forming a controlled layer of aluminum oxide on the single crystal copper-based shape memory alloy.


In general, the controlled layer of aluminum oxide is actively applied or formed, in contrast to the thin, and likely irregular (accidental) layer of Aluminum oxide that may be formed. The controlled layer is formed by further modification of the single-crystal material (e.g., by controlling the concentration of Al near the outer surface, etc.).


The step of forming a single crystal copper-aluminum alloy typically includes lowering a seed of a copper aluminum based alloy into a molten melt of a copper aluminum based alloy, wherein the seed is aligned on the <100>crystallographic direction in a direction of pulling, pulling a column of the alloy of arbitrary length from the melt by pulling at a pulling rate so that the rising column is cooled relative to the melt, to form a crystallization front above the surface of the melt, wherein the melt is kept at a constant temperature and has a composition so that the pulled single crystal column has a transition temperature from martensite to austenite that is below 37 degrees Celsius, applying a predetermined hydrostatic pressure on the column and heating the column to a temperature less than 1100° C., the pulling rate, hydrostatic pressure and temperature being sufficient to crystallize the alloy in the column into a single crystal, and rapidly quenching the single crystal.


The step of forming the controlled layer of aluminum oxide may include doping the surface with Al after forming the single crystal of copper-based shape memory alloy. In some variations, the step of forming the controlled layer of aluminum oxide comprises anodizing the outer surface of the single crystal copper-based shape memory alloy. For example, the controlled layer of aluminum oxide may be formed by applying a high voltage to the single crystal copper-based shape memory alloy to form an aluminum oxide layer on the outer surface.


In some variations, the method of forming a biocompatible SMA includes applying a sealant to the outer surface of the single crystal copper-based shape memory alloy.


The formation of a biocompatible SMA may also include the step of polishing at least a portion of the outer surface of the single crystal copper-based shape memory alloy (e.g., by electropolishing, grinding, etc.).


The single crystal copper-based shape memory alloy may be formed in any appropriate manner. For example, US Patent application titled “METHOD OF ALLOYING REACTIVE COMPONENTS” to Johnson et al., claiming priority to U.S. provisional patent Application Ser. No. 60/868,116, titled “METHOD OF ALLOYING REACTIVE ELEMENTAL COMPOSITIONS,” (filed on Dec. 1, 2006) describes exemplary methods of forming single crystal shape memory alloys.


In some variations, the single crystal copper-based shape memory alloy is a CuAlNi alloy.


Also described herein are methods of forming a biocompatible single crystal copper-based shape memory alloy including the steps of: forming a single crystal copper-based shape memory alloy; preparing the surface of the single crystal copper-based shape memory alloy; and forming a controlled layer of aluminum oxide on the single crystal copper-based shape memory alloy.


The step of preparing the surface of the single crystal copper-based shape memory alloy may include polishing or grinding the surface. In some variations, the step of preparing the surface includes etching the surface.


In some variations, the step of forming the controlled layer of aluminum oxide comprises doping the surface with Al after forming the single crystal of copper-based shape memory alloy, anodizing the outer surface of the single crystal copper-based shape memory alloy, and/or applying a high voltage to the single crystal copper-based shape memory alloy.


Also described herein are biocompatible devices for use within a body. These devices typically include a single crystal copper-based (e.g., copper aluminum) SMA having a protective outer layer of aluminum oxide. The single-crystal copper-based SMA may be, for example, CuAlNi. The protective outer layer of aluminum oxide may be an amorphous layer of aluminum oxide, or a substantially crystalline aluminum oxide. In some variations, the protective outer layer of aluminum oxide is greater than 10 nm thick, or greater than 100 nm thick, or greater than 500 nm thick. In some variations, the protective outer layer of aluminum oxide is approximately uniform in thickness. In some variations, the protective outer layer of aluminum oxide is non-uniform in thickness. For example, the protective outer layer of aluminum oxide is thicker in regions of the single crystal copper-based SMA having a larger or a smaller diameter.


The biocompatible devices including a single crystal copper-based SMA may be: a joint replacement, a hip bone replacement, a guidewire, a clot retriever, a blood filter, a stent, a dental arch, or virtually any other implantable device. Examples of these methods and devices are provided herein.


INCORPORATION BY REFERENCE

All publications and patent applications mentioned in this specification are herein incorporated by reference in their entirety to the same extent as if each individual publication or patent application was specifically and individually indicated to be incorporated by reference.





BRIEF DESCRIPTION OF THE DRAWINGS


FIG. 1 shows the stress-strain profile for one variation of a hyperelastic SMA as described herein.



FIG. 2 shows exemplary samples used for the cytotoxicity testing described herein.



FIG. 3 shows exemplary samples used for the systemic toxicity and hemocompatibility testing.



FIGS. 4A-4F show Auger electron spectroscopy (AES) at the surface and at progressively deeper plasma-etched levels (in increments of 200Å, respectively) for a copper-based SMA.



FIGS. 5A-5F show another set of Auger electron spectroscopy (AES) at the surface and at progressively deeper plasma-etched levels (in increments of 200Å, respectively) for a copper-based SMA.



FIGS. 6A-6F show Auger electron spectroscopy (AES) at the surface and at progressively deeper plasma-etched levels (in increments of 200Å, respectively) for a banded sample of copper-based SMA.



FIGS. 7A-7F show another set of Auger electron spectroscopy (AES) at the surface and at progressively deeper plasma-etched levels (in increments of 200Å, respectively) for a banded sample of copper-based SMA.





DETAILED DESCRIPTION OF THE INVENTION

Articles made of single crystal copper-aluminum-nickel superelastic alloys exhibit large shape recovery and would be useful in medical devices were it not for the perception that their large copper content must cause deleterious interaction with living tissue.


We herein show that Cu-based SMAs can be biocompatible. In particular, we show the results of MEM elution cell cytotoxicity, ISO intramuscular implant, and hemo-compatibility tests producing negative cytotoxic results. This biocompatibility may be attributed to the formation of a durable oxide surface layer analogous to the titanium oxide layer that inhibits body fluid reaction to titanium nickel alloys. Furthermore (or alternatively), the non-existence of crystal domain boundaries may inhibit corrosive chemical attack. Experimental biocompatibility results, surface analysis, and suggested applications are discussed. We also describe methods for enhancing the biocompatibility of Copper-based SMAs for medical uses.


Copper-Based SMAs


Superelastic single crystal CuAlNi is extraordinarily flexible. Many procedures in medical practice that will benefit from improved flexibility, such as archwires for orthodontistry, guidewires for catheters, clot retrievers for intracranial and cardiovascular intervention, etc. Each of these applications requires material that can be exposed to tissues and/or the blood stream without causing toxic damage.


By comparison, Nitinol, a compound of nickel and titanium, is used extensively in these and similar applications because it is more flexible than steel. Single crystal superelastic CuAlNi can do what Nitinol wire can do, and with improvement: shape recovery is complete. See FIG. 1.


A material is biocompatible if it can be in contact with living body tissues for extended periods without thrombogenicity or corrosion. This may be alternatively expressed as the ability of a material to perform with an appropriate host response in a specific application (Williams' definition), or as the quality of not having toxic or injurious effects on biological systems (Dorland's Medical Dictionary). To determine biocompatibility, the tissue response produced through the close association of the implanted candidate material to its implant site within the host animal may be compared to that tissue response recognized and established as suitable for control materials (e.g., based on standards provided by the American Society for Testing and Materials).


It was determined several years ago, in development of guidewires and cardiovascular stents, that Nitinol is biocompatible despite its 50 atomic percent Ni content. A very thin titanium oxide layer protects the surface.


As described above, Copper is considered to be toxic to tissues and cells. As we have determined and described herein, a single crystal alloy of copper, such as CuAlNi, in which the copper is chemically bound, behaves differently from any one of the individual elemental components.


To determine the extent to which CuAlNi alloy is biocompatible, four series of tests were performed on a single crystal CuAlNi alloy: cytotoxicity, systemic toxicity, hemocompatibility, and implantation with histopathology.


Cytoxicity


Cytotoxicity testing (ISO 10993-05, USP-87, MEM elution) was performed on CuAlNi rods. The tests were designed to determine the cytotoxicity of extractable substances. An extract of the sample was added to cell monolayers and incubated. The cell monolayers were examined and scored based on the degree of cell destruction. The sample included 9 pieces of 65.2 cm squared (Lab # 267408) CuAlNi rods. Example rods are shown in FIG. 2


The result of these tests was negative for cytotoxicity: cells continued to thrive.


Systemic Toxicity


Systemic toxicity (ISO 10993-11) testing was performed. The purpose of this test was to screen test article extracts for potential toxic effects as a result of a single-dose injection in mice. Groups of five (5) Albino Swiss Mice (Mus musculus) were injected systemically with extracts of the test article or control vehicle at a dose rate of 50 mL extract to one kg body weight. The animals were observed for signs of toxicity immediately and at 4, 24, 48 and 72 hours post injection. The test is considered negative if none of the animals injected with the test article extract show a significantly greater biological reaction than the animals treated with the control vehicle extract. A significant biological reaction is interpreted as death in two or more mice or other signs such as convulsions, prostration, or body weight loss greater than 2 grams in three or more mice.


The samples tested included CuAlNi (“Elastamet™”) centerless ground 2 mm diameter 60 mm long (Lab #335379) rods. See FIG. 3.


The result was negative: no harm was done to live animals. The test articles did not produce systemic toxicity under this test.


Hemocompatibility


Hemocompatibility testing (ISO 10993-4; Hcx140) was performed on CuAlNi samples. The procedure uses the general principles outlined in ASTM F 756-00. Extract from sample was incubated with human blood, and a hemolytic index calculated from hemoglobin released.


Samples of CuAlNi were tested using hemolysis Procedure Number STP0093 REV 02 (by Nelson Laboratories, Salt Lake City), which follows general principles of ASTM F 756-00. Human blood was exposed to the alloy and a hemolytic index was calculated. The samples tested (Lab #362047) were similar to those shown in FIG. 3.


The difference between the hemolytic indexes of the test sample and the negative control equals 0.21 percent. This places the test sample in the non-hemolytic range.


Implantation with Histopathology


Implantation with histopathology testing (ISO 10993-6. SCX610) was performed. The purpose of this study was to evaluate the potential toxic effects of a biomaterial in direct contact with living muscle tissue of the rabbit using the standard USP Implantation Test.


AppTec Histology Laboratory performed an ISO 07 day observation with histopathology study to evaluate the local effects of a test article in direct contact with living skeletal muscle tissue. Sections of the test article (CuAlNi rods, Elastamet wire, five pieces, lot #NDM-11, Lab #362046) and control were implanted surgically in the paravertebral muscles of three rabbits. After the exposure period the animals were sacrificed, the paravertebral muscles explanted, the implantation sites were examined grossly for sign of infection, necrosis, discoloration, hemorrhage and also scored for encapsulation. The final analysis of the local effect was based on the histopathology evaluation.


Based on the observations of the histopathologist, the test article was considered a non-irritant.


The negative results of all of these tests implied that the prepared Cu-based SMAs tested are biocompatible, and may be used anywhere that it is deemed useful as it will not harm body tissues by chemical attack in body contact, despite the high copper content.


Preparation of the CU-Based SMA Surface


Biocompatibility and corrosion resistance may be ensured and enhanced by formation of an angstroms-thick layer of aluminum oxide. For example, the samples examined above included a protective outer layer of aluminum oxide. Samples similar to those tested for biocompatibility above were examined by Auger spectroscopy, as illustrated in FIGS. 4A-7F, and show that the surface is enriched in oxygen and aluminum. This layer of aluminum oxide may protect the crystal, and may prevent any adverse affects.



FIGS. 4A-7F show the results of Auger electron spectroscopy (AES) identifying the thin surface layer of aluminum oxide on the outside of the biocompatible copper-based SMAs tested above. The figures show that the surface layer is enriched in Al relative to Cu at least to a depth of 200 Angstroms, (and probably deeper). For example, FIGS. 4A-4F show AES starting at the surface of the sample (as received), in FIG. 4A, and following progressive 200Å sputtering. For example, FIG. 4B is AES after 200Å sputtering, FIG. 4C is AES after 400Å sputtering, FIG. 4D is AES after 600Å sputtering, FIG. 4E is AES after 800Å sputtering and FIG. 4F is AES after 1000Å sputtering. FIGS. 5A-5F show another series of AES following progressive sputtering from the sample shown in FIGS. 4A-4F. Surfaces having a visible dark layer ('banded'), the relative enrichment extends as far as 1000 Angstroms, as shown in FIGS. 6A-6F and again in FIGS. 7A-7F (showing AES at progressive sputtering depths, as indicated). Thus, aluminum in a copper-based SMA may diffuse to the surface and be oxidized, so that it is trapped in the surface in the form of aluminum oxide. Aluminum oxide is typically stable at very high temperatures.


A protective aluminum oxide layer may be formed on the surface of the copper-based SMA when the material is formed (for example, as the crystal is grown and/or when it is quenched). The formation, composition and thickness of this protective surface layer may be controlled to ensure biocompatibility. In particular, surface treatments that are compatible with the formation and maintenance of the protective layer (e.g., of aluminum oxide) that do not damage or interfere with the single crystal copper-based SMA are preferred.


A single-crystal of CuAlNi material, for example, may be prepared by a modified Stepanov method, as described in U.S. patent application Ser. No. 10/588,413 (titled “SINGLE CRYSTAL SHAPE MEMORY ALLOY DEVICES AND METHODS”), herein incorporated in its entirety. In this procedure, a seed of single-crystal SMA alloy (e.g., CuAl-based alloy) is used to pull a length of anisotropic, single crystal shape memory alloy having hyperelastic properties. The ability of a single-crystal to successfully seed a single-crystal pull has been found to be highly dependent on the quality of the seed crystal. In practice it is highly difficult to determine if a particular seed crystal will successfully work; visual inspection does not provide sufficient indication, as even crystals that appear to be good visually may fail to produce a successful pull. Methods of forming single-crystal copper-aluminum alloys that overcome this non-trivial difficulty are described in U.S. patent application Ser. No. 11/243,519 (“METHODS OF ALLOYING REACTIVE COMPONENTS”), herein incorporated by reference in its entirety. These methods may include forming the seed from controlled layers that are reacted together.


The anisotropic single crystal shape memory alloy material formed is deformable at a constant force at recoverable strain of at least 9% with a very narrow loading-unloading hysteresis, a recovery which is completely repeatable and complete and a very low yield strength when martensitic. The seed of copper aluminum based alloy is dipped into a molten melt of a copper aluminum based alloy, wherein the seed is aligned on the <100>crystallographic direction that is the same as the direction of pulling. A column of material is then pulled (to any desired length of the alloy) from the melt by pulling at a predetermined pulling rate so that the rising column is cooled relative to the melt, to form a crystallization front above the surface of the melt, wherein the melt has a composition so that the pulled single crystal column has a transition temperature from martensite to austenite that is below 37 degrees Celsius. The melt is kept at a constant temperature. A predetermined hydrostatic pressure may be applied on the column and the column may be heated to a predetermined temperature, the predetermined pulling rate, hydrostatic pressure and temperature being sufficient to crystallize the alloy in the column into a single crystal. After pulling, the column of single crystal material may be rapidly quenched.


During this formation process, the material may be treated or coated to form the appropriately controlled layer of aluminum oxide. For example, additional Al may be added to the pulled column after is has been pulled from the melt, to enhance the amount of Al on the outer layers of the material that may be available for the aluminum oxide coating. This may be particularly important for alloys having a relatively small percentage of Aluminum (e.g., less than 15%, less than 10%, etc.). In some variations, a stream of reactive gas (e.g., oxygen gas) or plasma may be applied, or any other appropriate coating methods, including those described herein. Alternatively, the material may be coated after formation during post-processing.


The chemical resistance of the appropriately coated single crystal CuAlNi alloys examined here is greater than would be expected, which may be in part due to the layer of aluminum oxide. For example, a single crystal copper-based SMA may have a higher resistance to corrosion due to the surface layer of Aluminum oxide. Several very preliminary observations regarding aging and corrosion resistance include:

    • Corrosion in air. After centerless grinding of the single crystal CuAlNi, the surface is bright. This gradually turns darker over months of exposure to room air. This is most noticeable on samples not carefully cleaned. Electropolished samples may remain bright for many months (the brightness may be copper color).
    • Salt water. Parts immersed in seawater for 24 months became covered with black, but part appears to be undamaged.
    • Preliminary experiments looking at corrosion: parts immersed in strong acids and bases for several months are differently affected. Sulphuric acid gradually eroded the surface, leaving it a bright copper color; nitric acid dissolved the sample after several weeks; HCL solution turns blue after several months, and sample shows damage;
    • KOH has no noticeable effect.


      Methods of Treating Copper-Based SMA


Copper-based SMAs may be treated in various ways, including treatments to form and enhance the protective surface layer (e.g., aluminum oxide layer). For example, during the formation of a copper-based SMA alloy, the quenching step may be used to create an appropriate oxide protective layer.


In some variations, the surface of the copper-based SMA may be electropolished to create ultrasmooth surface. Further processing may be used to enhance biocompatibility. In some variations, shape-setting by rapid heating and cooling may be used. In some variations, the material may be electropolished by treatment using a relatively low voltage (e.g., in the order of 10-20 volts), with a concentrated solution of acid (e.g. glacial acetic acid) and an oxidizer (e.g. chromium trioxide).


A protective layer of aluminum oxide may be controllably added by a number of processes, including those described herein, such as increasing the surface concentration of aluminum (e.g., by doping the surface, or enhancing diffusion to the surface, etc.), anodizing, plasma electrolytic oxidation, or the like. Although a layer of aluminum oxide may be formed as a byproduct during the processes for forming the single crystal alloy by the subsequent heating and ‘quenching’ used in forming the alloy, the layer is typically uneven, and the actual thickness may be insufficient to convey durable biocompatibility and resistance to corrosion. Thus, it is highly advantageous to provide a deliberate process to create a layer of aluminum oxide (e.g., nanometer-thick or greater) for the purpose of enhancing the properties of the copper-based SMA. In some variations, the surface layer of aluminum oxide is greater than 1 nm thick, greater than 10 nm thick, or greater than 100 nm thick.


As mentioned above, the surface of the copper-based SMA may be prepared in order to enhance the aluminum oxide layer. For example, the surface may be polished or ground (e.g., by centerless grinding, electropolishing, etc.). Preparing the surface may also allow further control over the thickness and distribution of the aluminum oxide layer.


In some variations, the thickness of the aluminum oxide layer is non-uniform, but is instead controlled so that it is thicker in regions of the device that may require additional protection or biocompatibility. For example, regions of the device that are configured to displace more than other regions (e.g., regions having a smaller cross-sectional area) may include a thicker protective coating, which may resist wear or disruption during the normal use of the device.


One way to control the thickness and/or distribution of the aluminum oxide layer is to control the concentration and/or distribution of aluminum near the surface of the copper-based SMA. For example, the percentage of Al near all or a portion of the surface of a single crystal device may be enhanced. In one variation, a single crystal copper-based SMA is formed with a controlled (e.g., relatively small) percentage of Al in the alloy, and then the alloy is soaked an Al-rich environment at a high enough temperature for the Al atoms to diffuse to the surface. This surface (or near-surface) Al may then be oxidized. In some variations, a layer of Al may be deposited on the surface of the single crystal SMA, the surface can be heated to cause diffusion of Al atoms into the surface, and an aluminum oxide layer can then be formed using the “doped” Al.


The thickness and properties of the oxide layer may also be enhanced or controlled in a process similar to anodizing, by the application of electrical voltage to the device (e.g., electrolytic passivation).


In one variation, plasma electrolytic oxidation may be used to coat (or enhance the coating of) aluminum oxide on the copper-based SMA. This may be achieved by the application of relatively high voltages.


In general, the crystalline form of the aluminum oxide may be controlled. For example, the surface of the copper-based SMA may be partially or completely coated with an amorphous aluminum oxide layer. In other variations, the aluminum oxide layer on the surface of a single crystal copper-based SMA maybe predominantly (or completely) crystalline aluminum oxide. The crystalline form of aluminum oxide included on the surface of the copper-based SMA may depend on the intended use. For example, crystalline aluminum oxide may enhance the surface strength and corrosion resistance. Amorphous aluminum oxide may be preferred in some variations in which the SMA will undergo substantial recoverable deformation.


In some variations, an additional coating layer (e.g., sealant, etc.) may also be applied. For example, the surface of the SMA may be sealed to further enhance corrosion resistance.


Uses of Biocompatible Copper-Based SMAs


As described above, single crystal copper-based SMAs, particularly those having a protective layer of aluminum oxide (and any additional coating) may be used as part of any appropriate biomedical device, particularly implants. In general, hyperelastic shape memory alloys such as single crystal copper-based SMAs are superior for use in medical applications because of their large recoverable strain at constant stress. One can take advantage of this feature to protect body tissues from damage.


In normal use, metal acts as an elastic material, with minimal displacement. In unusual condition, if stress rises above a critical level, the metal displaces without exerting additional force, and the displacement can be as much as 9 percent strain. This has two advantages: the device is not so likely to fracture, and it protects the bone or other body tissue to which the implanted device is attached from stresses that are beyond its fracture limit.


Thus, devices for use within the human (or other mammalian) body, and particularly those chronically exposed to bodily fluids, may be formed from single crystal copper-based SMAs that are protected by a (controlled) coating of aluminum oxide. Various copper-based SMAs, including Cu+Al+ (Ni or Mn or Be) may be used. These biocompatible alloys may be used to take advantage of their hyperelastic properties (having recoverable strains greater than 8% with a relatively flat stress plateau, as shown in FIG. 1). In particular, devices having a martensitic transformation with Af between 10 and 40 degrees C. may be useful. Such devices may be useful for intravascular use, for intramuscular use, for intraocular use, etc.


For example, a hip bone replacement may be at least partially formed of a single crystal shape memory device including a protective coating of aluminum oxide, as described herein. Other examples of implants made from such single crystal copper-based devices include joint implants, devices including a guidewire, clot retrievers, blood filters (e.g., embolism filters), stents, dental arches, etc.


The chemical resistance (e.g., to corrosion, etc.) of a single crystal copper-based SMA (e.g., CuAlNi) is greater than would be expected from the chemical contents of the alloy when protected by the aluminum oxide layer. Further the copper-based SMA including the aluminum oxide layer is substantially biocompatible, as suggested by the tests described above.


While preferred embodiments of the present invention have been shown and described herein, it will be obvious to those skilled in the art that such embodiments are provided by way of example only. Numerous variations, changes, and substitutions will now occur to those skilled in the art without departing from the invention. It should be understood that various alternatives to the embodiments of the invention described herein may be employed in practicing the invention. It is intended that the following claims define the scope of the invention and that methods and structures within the scope of these claims and their equivalents be covered thereby.

Claims
  • 1. A biocompatible device for use within a body comprising a single crystal copper-based shape memory alloy having an exposed outer surface at and below which resides a surface region of depth greater than 1 nm below the exposed outer surface that is enriched in aluminum relative to copper, wherein the aluminum enriched in the surface region of the single crystal copper-based shape memory alloy is in the form of aluminum oxide thereby forming a protective outer layer comprising aluminum oxide greater than 1 nm thick that is formed at least in part by oxidizing the aluminum enriched in the surface region of the single crystal.
  • 2. The device of claim 1, wherein the single-crystal copper-based shape memory material comprises CuAlNi.
  • 3. The device of claim 1, wherein the protective outer layer comprising aluminum oxide is an amorphous layer of aluminum oxide.
  • 4. The device of claim 1, wherein the protective outer layer comprising aluminum oxide is substantially crystalline aluminum oxide.
  • 5. The device of claim 1, wherein the protective outer layer comprising aluminum oxide is greater than 100 nm thick.
  • 6. The device of claim 1, wherein the single crystal copper-based shape memory alloy is configured as at least one of: a joint replacement, a hip bone replacement, a guidewire, a clot retriever, a blood filter, a stent, and a dental arch.
  • 7. The device of claim 1, wherein the depth of the surface region is greater than 10 nm below the exposed outer surface.
  • 8. A method of forming the biocompatible device of claim 1, the method comprising the steps of: forming the single crystal copper-based shape memory alloy from a seed of copper aluminum based alloy aligned on the <100>crystallographic direction; andforming the protective outer layer comprising aluminum oxide in the surface region of the single crystal copper-based shape memory alloy by a controlled process of doping the surface region with Al after forming the single crystal copper-based shape memory alloy, anodizing the surface region of the single crystal copper-based shape memory alloy, and/or applying a high voltage to the single crystal copper-based shape memory alloy.
  • 9. A biocompatible dental arch comprising a copper-aluminum single crystal shape memory alloy having an exposed outer surface from which extends a surface region of depth greater than 1 nm below the outer surface of the single crystal shape memory alloy that is enriched in aluminum relative to copper, wherein the surface region provides a protective outer layer comprising aluminum oxide formed at least in part by oxidizing the aluminum enriched in the surface region of the single crystal.
  • 10. The device of claim 9, wherein the protective outer layer comprising aluminum oxide is greater than 10 nm thick.
  • 11. The device of claim 9, wherein the single-crystal copper-based shape memory material comprises CuAlNi, and the protective outer layer comprising aluminum oxide is an amorphous layer of aluminum oxide of thickness greater than 100 nm.
  • 12. The device of claim 9, wherein the single-crystal copper-based shape memory material comprises CuAlNi, and the protective outer layer comprising aluminum oxide is substantially crystalline aluminum oxide of thickness greater than 100 nm.
CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit under 35 U.S.C. 119 of U.S. Provisional Patent Application No. 60/991,634 filed Nov. 30, 2007, titled “BIOCOMPATIBLE COPPER-BASED SINGLE-CRYSTAL SHAPE MEMORY ALLOYS”.

STATEMENT AS TO FEDERALLY SPONSORED RESEARCH

This invention was made with the support of the United States government under DARPA Contract number W31P4Q-05-C-0158.

US Referenced Citations (229)
Number Name Date Kind
368425 Ross et al. Aug 1887 A
538593 Naylor, Jr. Apr 1895 A
1560335 Czochralski Nov 1925 A
1904828 Green Apr 1933 A
1913035 Loepsinger Jun 1933 A
1926925 Wescott Sep 1933 A
2060593 Schaurte et al. Nov 1936 A
2371614 Graves Mar 1945 A
2586556 Mullikin Feb 1952 A
2608996 Forman Sep 1952 A
2610300 Walton et al. Sep 1952 A
2647017 Coulliette Jul 1953 A
2793036 Hansburg May 1957 A
2911504 Cohn Nov 1959 A
3229956 White Jan 1966 A
3351463 Rozner et al. Nov 1967 A
3357432 Sparks Dec 1967 A
3400906 Stocklin Sep 1968 A
3408890 Bochman, Jr. Nov 1968 A
3435823 Edwards Apr 1969 A
3445086 Quinn May 1969 A
3454286 Anderson et al. Jul 1969 A
3546996 Grijalva et al. Dec 1970 A
3559641 Lay Feb 1971 A
3561537 Dix et al. Feb 1971 A
3613732 Willson et al. Oct 1971 A
3620212 Fannon, Jr. et al. Nov 1971 A
3659625 Coiner et al. May 1972 A
3725835 Hopkins et al. Apr 1973 A
3789838 Fournier et al. Feb 1974 A
3849756 Hickling Nov 1974 A
3888975 Ramwell Jun 1975 A
3913572 Wheeler Oct 1975 A
3918443 Vennard et al. Nov 1975 A
3974844 Pimentel Aug 1976 A
4055955 Johnson Nov 1977 A
4063831 Meuret Dec 1977 A
4072159 Kurosawa Feb 1978 A
4096993 Behr Jun 1978 A
4145764 Suzuki et al. Mar 1979 A
4151064 Kuehnle Apr 1979 A
4176719 Bray Dec 1979 A
4177327 Mathews Dec 1979 A
4243963 Jameel et al. Jan 1981 A
4265684 Boll May 1981 A
4279190 Hummel Jul 1981 A
4279790 Nakajima Jul 1981 A
4340049 Munsch Jul 1982 A
4434855 Given, Jr. Mar 1984 A
4485545 Caverly Dec 1984 A
4501058 Schutzler Feb 1985 A
4524343 Morgan et al. Jun 1985 A
4549717 Dewaegheneire Oct 1985 A
4551974 Yaeger et al. Nov 1985 A
4553393 Ruoff Nov 1985 A
4558715 Walton et al. Dec 1985 A
4567549 Lemme Jan 1986 A
4585209 Aine et al. Apr 1986 A
4589179 Hulting, Jr. May 1986 A
4596483 Gabriel Jun 1986 A
4619284 Delarue et al. Oct 1986 A
4654191 Krieg Mar 1987 A
4684913 Yaeger Aug 1987 A
4706758 Johnson Nov 1987 A
4753465 Dalby Jun 1988 A
4821997 Zdeblick Apr 1989 A
4823607 Howe et al. Apr 1989 A
4824073 Zdeblick Apr 1989 A
4848388 Waldbusser Jul 1989 A
4854797 Gourd Aug 1989 A
4864824 Gabriel et al. Sep 1989 A
4893655 Anderson Jan 1990 A
4896728 Wolff et al. Jan 1990 A
4915773 Kravetsky et al. Apr 1990 A
4943032 Zdeblick Jul 1990 A
5044947 Sachdeva et al. Sep 1991 A
5060888 Vezain et al. Oct 1991 A
5061137 Gourd Oct 1991 A
5061914 Busch et al. Oct 1991 A
5069419 Jerman Dec 1991 A
5072288 MacDonald et al. Dec 1991 A
5102276 Gourd Apr 1992 A
5114504 AbuJudom, II et al. May 1992 A
5116252 Hartman May 1992 A
5117916 Ohta et al. Jun 1992 A
5119555 Johnson Jun 1992 A
5129753 Wesley et al. Jul 1992 A
5131843 Hilgers et al. Jul 1992 A
5160233 McKinnis Nov 1992 A
5190546 Jervis Mar 1993 A
5192147 McCloskey Mar 1993 A
5211371 Coffee May 1993 A
5218998 Bakken et al. Jun 1993 A
5245738 Johnson Sep 1993 A
5309717 Minch May 1994 A
5312152 Woebkenberg, Jr. et al. May 1994 A
5312247 Sachdeva et al. May 1994 A
5325880 Johnson et al. Jul 1994 A
5344117 Trah et al. Sep 1994 A
5364046 Dobbs et al. Nov 1994 A
5395238 Andreiko et al. Mar 1995 A
5447432 Andreiko et al. Sep 1995 A
5456600 Andreiko et al. Oct 1995 A
5474448 Andreiko et al. Dec 1995 A
5494113 Polan Feb 1996 A
5502982 Venetucci Apr 1996 A
5543349 Kurtz et al. Aug 1996 A
5605543 Swanson Feb 1997 A
5619177 Johnson et al. Apr 1997 A
5622225 Sundholm Apr 1997 A
5640217 Hautcoeur et al. Jun 1997 A
5641364 Golberg et al. Jun 1997 A
5645423 Collins, Jr. Jul 1997 A
5658515 Lee et al. Aug 1997 A
5676356 Ekonen et al. Oct 1997 A
5683245 Sachdeva et al. Nov 1997 A
5695504 Gifford, III et al. Dec 1997 A
5714690 Burns et al. Feb 1998 A
5722989 Fitch et al. Mar 1998 A
5771742 Bokaie et al. Jun 1998 A
5772378 Keto-Tokoi Jun 1998 A
5796152 Carr et al. Aug 1998 A
5819749 Lee et al. Oct 1998 A
5825275 Wuttig et al. Oct 1998 A
5837394 Schumm, Jr. Nov 1998 A
5840199 Warren Nov 1998 A
5850837 Shiroyama et al. Dec 1998 A
5867302 Fleming Feb 1999 A
5903099 Johnson et al. May 1999 A
5916178 Noone et al. Jun 1999 A
5924492 Kikuchi et al. Jul 1999 A
5930651 Terasawa Jul 1999 A
5960812 Johnson Oct 1999 A
6042374 Farzin-Nia et al. Mar 2000 A
6042553 Solar et al. Mar 2000 A
6072617 Henck Jun 2000 A
6073700 Tsuji et al. Jun 2000 A
6075239 Aksyuk et al. Jun 2000 A
6080160 Chen Jun 2000 A
6084849 Durig et al. Jul 2000 A
6101164 Kado et al. Aug 2000 A
6110204 Lazarov et al. Aug 2000 A
6123153 Finnegan Sep 2000 A
6124523 Banas et al. Sep 2000 A
6126371 McCloskey Oct 2000 A
6129153 Joung Oct 2000 A
6139143 Brune et al. Oct 2000 A
6195478 Fouquet Feb 2001 B1
6203715 Kim et al. Mar 2001 B1
6229640 Zhang May 2001 B1
6247493 Henderson Jun 2001 B1
6277133 Kanesaka Aug 2001 B1
6284067 Schwartz et al. Sep 2001 B1
6352494 McAlonan Mar 2002 B2
6358380 Mann et al. Mar 2002 B1
6386507 Dhuler et al. May 2002 B2
6406605 Moles Jun 2002 B1
6407478 Wood et al. Jun 2002 B1
6410360 Steenberge Jun 2002 B1
6447478 Maynard Sep 2002 B1
6451668 Neumeier et al. Sep 2002 B1
6454913 Rasmussen et al. Sep 2002 B1
6470108 Johnson Oct 2002 B1
6475261 Matsumoto et al. Nov 2002 B1
6524322 Berreklouw Feb 2003 B1
6533905 Johnson et al. Mar 2003 B2
6537310 Palmaz et al. Mar 2003 B1
6582985 Cabuz et al. Jun 2003 B2
6592724 Rasmussen et al. Jul 2003 B1
6596102 Homma Jul 2003 B2
6605111 Bose et al. Aug 2003 B2
6614570 Johnson et al. Sep 2003 B2
6620634 Johnson et al. Sep 2003 B2
6624730 Johnson et al. Sep 2003 B2
6669794 Bellouard et al. Dec 2003 B1
6669795 Johnson et al. Dec 2003 B2
6672502 Paul et al. Jan 2004 B1
6688828 Post Feb 2004 B1
6729599 Johnson May 2004 B2
6742761 Johnson et al. Jun 2004 B2
6746890 Gupta et al. Jun 2004 B2
6771445 Hamann et al. Aug 2004 B1
6790298 Johnson et al. Sep 2004 B2
6811910 Tsai et al. Nov 2004 B2
6840329 Kikuchi et al. Jan 2005 B2
6843465 Scott Jan 2005 B1
6852132 Houser et al. Feb 2005 B1
6908275 Nelson et al. Jun 2005 B2
6918545 Franson et al. Jul 2005 B2
6920966 Buchele et al. Jul 2005 B2
6955187 Johnson Oct 2005 B1
7022173 Cummings et al. Apr 2006 B2
7040323 Menchaca et al. May 2006 B1
7044596 Park May 2006 B2
7073504 Callister et al. Jul 2006 B2
7084726 Gupta et al. Aug 2006 B2
7201367 Wietharn Apr 2007 B2
7422403 Johnson et al. Sep 2008 B1
7441888 Johnson Oct 2008 B1
7736687 Sims et al. Jun 2010 B2
7793911 Fontana et al. Sep 2010 B2
20010023010 Yamada et al. Sep 2001 A1
20020018325 Nakatani et al. Feb 2002 A1
20020062154 Ayers May 2002 A1
20020106614 Prince et al. Aug 2002 A1
20020192617 Phan et al. Dec 2002 A1
20030002994 Johnson et al. Jan 2003 A1
20030078465 Pai et al. Apr 2003 A1
20030170130 Johnson Sep 2003 A1
20040083006 Ellingsen Apr 2004 A1
20040200551 Brhel et al. Oct 2004 A1
20040221614 Holemans et al. Nov 2004 A1
20040243219 Fischer et al. Dec 2004 A1
20040249399 Cinquin et al. Dec 2004 A1
20050113933 Carter et al. May 2005 A1
20060118210 Johnson Jun 2006 A1
20060204738 Dubrow et al. Sep 2006 A1
20060213522 Menchaca et al. Sep 2006 A1
20060232374 Johnson Oct 2006 A1
20060240953 Shahinpoor Oct 2006 A1
20070137740 Johnson et al. Jun 2007 A1
20070207321 Abe et al. Sep 2007 A1
20070246233 Johnson Oct 2007 A1
20080075557 Johnson et al. Mar 2008 A1
20080213062 Johnson Sep 2008 A1
20090035859 Johnson Feb 2009 A1
20090183986 Johnson et al. Jul 2009 A1
20100129766 Hilgers May 2010 A1
20100190127 Ghantiwala et al. Jul 2010 A1
Foreign Referenced Citations (19)
Number Date Country
0053596 Jun 1982 EP
0310439 Apr 1989 EP
1122526 Aug 2001 EP
1238600 Sep 2002 EP
2187951 Sep 1987 GB
57161031 Oct 1982 JP
58088200 May 1983 JP
59179771 Oct 1984 JP
07090624 Apr 1995 JP
10173306 Jun 1998 JP
2000185999 Jul 2000 JP
1434314 Oct 1988 SU
WO9853362 Nov 1998 WO
WO9916387 Apr 1999 WO
WO9962432 Dec 1999 WO
WO0004204 Jan 2000 WO
WO03052150 Jun 2003 WO
WO2005108635 Nov 2005 WO
WO2006019943 Feb 2006 WO
Non-Patent Literature Citations (41)
Entry
Antonov et al.; New advances and developments in the Stepnakov method for the growth of shaped crystals; Crystallography Reports; vol. 47; Suppl. 1; 2002; pp. S43-S52.
Brice et al.; Crystal Growth; Ullmann's Encyclopedia of Industrial Chemistry; 2007; Wiley-VCH Verlag GmBH; pp. 1, 29-42, 50.
Buchaillot et al., “Thin film of titanium/nickel shape memory alloy for multi-degree of freedom microactuators”, Seisan Kenkyu, vol. 51, No. 8, 1999, pp. 22-23.
ElastametTM brochure from New Discovery Metals; 2007.
ElastametTM website screen capture, accessed Jul. 23, 2008.
Fu et al.; The growth characteristics with a shape memory effect; J. Phys.: Condens. Matter; vol. 4; 1992; pp. 8303-8310.
Johnson et al., “Application of shape memory alloys: advantages, disadvantages, and limitations,” Micromachining and Microfabrication Process Technology VII, 22-4, Oct. 2001, San Francisco, CA, USA, vol. 4557, pp. 341-351.
Martynov, V., “TiNi thin films for microactuators and microdevices: sputter deposition and processing techniques”, Thermec' 2003, Internat'l Conf. on Processing and Manufacturing of Advanced Materials, Jul. 7-11, 2003, Leganes, Madrid, Spain, Materials Science Forum, Jul. 7, 2003 vol. 426-432; pp. 3475-3480.
Morgan; Medical shape memory alloy applications—the market and its products; Materials Science and engineering A 378; 2004; pp. 16-23.
Nelson, Lewis S.; Copper; Goldfrank's Toxicologic Emergencies (7th Ed.); McGraw-Hill; Chap. 82C; pp. 1262-1271; 2002.
Pauling, Linus, College Chemistry, second edition, W.H. Freeman and Company, San Francisco, 1955, pp. 81-91.
Qingfu et al.; Stabilisation of martensite during training of Cu-Al-Ni single crystals; Journal de Physique IV; Collloqu C2; Supplement to the Journa de Physique III; vol. 5; Feb. 1995; pp. 181-186.
Recarte et al.; Influence of Al and Ni concentration on the martensitic transformation in Cu-Al-Ni shape-memory alloys; Metallurgical and MaterialsTransactions A; vol. 33A; Aug. 2002; pp. 2581-2591.
Sittner et al.; Stress induced martensitic transformations in tension/torsion of CuAlNi single crystal tube; Scripta Materialia; vol. 48; 2003; pp. 1153-1159.
Sutuo et al.; Development of medical guide wire of Cu-Al-Mn-base superelastic alloy with functionally graded characteristics; Mater Res Part B: Appl Biomater; vol. 69B; 2004; pp. 64-69.
Takabayashi et al., “Reversible shape memory alloy film fabricated by RF sputtering”, Materials and Manufacturing Processes, vol. 13, No. 2, 1998, pp. 275-286.
Viahhi et al.; “Robototechnic Constructions Based on CU-AL-NI Single Crystal Actuators;” Proceedings of Second International Conference on Shape Memory and Superelastic Technologies; 1997; United States.
Wang et al.; Temperature memory effect in CuAlNi single crystalline and CUZnAl polycrystalline shape memory alloys; Thermochimica Acta; vol. 448; 2006; pp. 69-72.
Yahia et al.; Bioperformance of shape memory alloy single crystals; Bio-Medical Materials and Engineering; vol. 16; 2006; pp. 101-118.
Zhang et al.; Nanoscale pseudoelasticity of single-crystal Cu-Al-Ni shape-memory alloy induced by cyclic nanoindentation; J Mater Sci; vol. 41; 2006; pp. 5021-5024.
Zhang et al.; The variant selection criteria in single-crystal CuAlNi shape memory alloys; Smart Mater. Struct.; vol. 9; 2000; pp. 571-581.
Zhdanov et al.; Thermal stresses in tubes, produced from a melt by the Stepanov method, during their cooling; Journal of Engineering Physics and Thermophysics; vol. 68; No. 1; 1995; pp. 80-89.
Xiaogdang, Ma; U.S. Appl. No. 10/972,759 entitled “Magnetic data storage system,” filed Oct. 25, 2004.
Johnson, David et al.; U.S. Appl. No. 11/006,501 entitled “Anastomosis device and method,” filed Dec. 6, 2004.
Johnson, David et al.; U.S. Appl. No. 11/041,185 entitled “Single crystal shape memory alloy devices and methods,” filed Jan. 24, 2005.
Johnson, David; U.S. Appl. No. 11/420,157 entitled “Shape memory allow thin film, method of fabrication, and articles of manufacture,” filed May 24, 2006.
Johnson, David et al.; U.S. Appl. No. 11/948,852 entitled “Method of alloying reactive elemental components,” filed Nov. 30, 2007.
Johnson, David et al.; U.S. Appl. No. 11/949,663 entitled “Hyperelastic shape setting devices and fabrication methods,” filed Dec. 3, 2007.
Johnson et al.; U.S. Appl. No. 12/019,553 entitled “Frangible shape memory alloy fire sprinkler valve actuator,” filed Jan. 24, 2008.
http://www.algor.com/news—pub/tech—reports/2005/rubber&foam/default.asp.
Christian et al.; The application of shape memory actuators in anthropomorphic upper limb prostheses; Artif. Organs; vol. 27; No. 5; pp. 473-477; 2003.
Dario et al.; Shape memory alloy microactuators for minimal invasive surgery; Proceedings of SMST-94 Conference; pp. 427-433; Pacific Grove CA; 1994.
Johnson, A. D.; Vacuum-deposited TiNi shape memory film: Characterization and applications in microdevices; J. Micromech. Microeng.; vol. 1; pp. 34-41; 1991.
Krulevitch et al.; Thin film shape memory alloy microactuators; J. Micromech. Microeng.; vol. 5; No. 4; pgs. 26; 1996.
Schetky, L.M.; Shape-memory alloys; Scientific American, pp. 74-82; 1979.
Johnson et al.; U.S. Appl. No. 12/503,614 entitled “Sprinkler valve with active actuation,” filed Jul. 15, 2009.
Johnson, A. David; U.S. Appl. No. 12/952,002 entitled “Hyperelastic shape setting devices and fabrication methods,” filed Nov. 22, 2010.
Creuziger et al.; Initial transformation around a notch tip in CuA1Ni: experiment and modeling; Acta Materialia; vol. 56; pp. 518-526; 2008.
Gill et al.; Three-Dimensional Thin-Film Shape Memory Alloy Microactuator With Two-Way Effect; Journal of Microelectromechanical Sys.; vol. 11; No. 1; pp. 68-77; Feb. 2002.
Johnson, Alfred D.; U.S. Appl. No. 13/220,522 entitled “Method and devices for preventing restenosis in cardiovascular stents,” filed Aug. 29, 2011.
Johnson et al.; U.S. Appl. No. 13/215,438 entitled “Shape setting a shape memory alloy dental arch,” filed Aug. 23, 2011.
Related Publications (1)
Number Date Country
20090187243 A1 Jul 2009 US
Provisional Applications (1)
Number Date Country
60991634 Nov 2007 US