Patent Application
20110217531
This invention relates to a magnetic film provided body and a fabrication method thereof, wherein the magnetic film provided body is formed of a base body provided with a magnetic film, especially, a spinel-structured ferrite film.
A ferrite plating method provides a fine quality ferrite film and is, for example, disclosed in Patent Document 1. The ferrite plating method comprises the steps of: preparing a specific solution containing at least ferrous ions; bringing a surface of a base body into contact with the specific solution to cause Fe2+ ions, or Fe2+ ions and other metal hydroxide ions, to be absorbed on the surface of the base body; and oxidizing the absorbed Fe2+ ions to obtain Fe3+ ions to cause the Fe3+ ions and metal hydroxide ions in the specific solution to undergo a ferrite crystallization reaction so that a ferrite film is formed on the surface of the base body.
The above-described ferrite plating method allows use of any kinds of base bodies, provided that the base bodies have tolerance to the solution. The ferrite plating method can produce a spinel-structured ferrite film under a relatively low temperature (the normal temperature to the boiling point of the solution or lower) because it is based on the reaction by using the solution. The ferrite plating method is superior to other ferrite film formation techniques in fewer limitations for the base body. The ferrite film formed through the ferrite plating method is superior in that the ferrite film, which is of ceramics, has flexibility and is easy to handle.
There are provided Patent Document 2 to Patent Document 6 and Non-Patent Document 1 as documents concerning the ferrite plating method. Patent Document 2 discloses a technique which homogenizes ferrite films formed and increases reaction rate in a ferrite film formation process. Patent Document 3 discloses a technique which makes a surface of a base body denatured and active by plasma processing so that ferrite films can be formed on the various base bodies. Patent Document 4 discloses a technique which relates to increasing ferrite film formation rate. Patent Document 5 discloses a technique which improves an insulation property of a ferrite film or a support body by coating the ferrite film or the support body with an insulation material. Patent Document 6 discloses a technique which relates to a ferrite thin film having high magnetic permeability over a wide frequency range. Patent Document 7 discloses a technique of forming a magnetic film (a ferrite film) by laminating strain-relaxation chemical compound layers and ferrite-constituent atom layers. Non-Patent Document 1 discloses a technique which relates to a noise-suppressor using the ferrite thin film based on the technique of Patent Document 6.
Non-Patent Document 1: “GHz Conducted Noise Suppression Effects by Ferrite Thin Films Plated onto Polyimide Sheet”, NEC TOKIN Technical Review vol. 31, p. 92, 2004; Koichi Kondo, Tatsuya Chiba, Hiroshi Ono, Shigeyoshi Yoshida and Masanori Abe
According to Patent Document 7, an exfoliation would not occur even when a thickness of the magnetic film is more than two micro meters. However, depending on the forming conditions, the magnetic film would be exfoliated from a base body or the magnetic film itself would be damaged in a case where the thickness is more than two micro meters
It is therefore an object of the present invention to determine an optimum forming condition of providing a magnetic film on a base body and to provide a fabrication method of a magnetic film provided body in which no exfoliation occurs even when a thickness of the magnetic film is more than two micro meters.
In addition, it is another object of the present invention to provide a magnetic film provided body which is fabricated in accordance with the above-mentioned fabrication method thereof.
One aspect of the present invention provides a fabrication method of a magnetic film provided body comprising preparing a base body and forming a magnetic film on the base body. The magnetic film comprises organic film(s) and ferrite film(s) alternately layered. The formation of the magnetic film alternately carries out: forming a ferrite film through a ferrite plating method, the ferrite film having a thickness of 20 μm or less; and forming an organic film, the organic film having a thickness of 0.1 μm to 20 μm, both inclusive. The organic film has a ratio t/E of 0.025 μm/GPa or more, where “t” indicates the thickness of the organic film, and “E” indicates Young's modulus of the organic film.
Another aspect of the present invention provides a magnetic film provided body comprising a base body and a magnetic film provided on the base body. The magnetic film comprises organic film(s) and ferrite film(s) alternately layered and an adhesive strength between the organic film and the ferrite film is 0.1 kN/m or more.
According to the present invention, by determining an optimum condition, a magnetic film which has a high adhesive strength can be formed on a base body, wherein the magnetic film comprises an organic film(s) and a ferrite film(s).
As shown in
In order that the adhesive strength between the layers to be 0.1 kN/m or more, in the embodiment, optimum conditions of a thickness of the ferrite film, a thickness of the organic film, and a ratio t/E are defined as follows, where “t” indicates the thickness of the organic film 6, and “E” indicates Young's modulus of the organic film 6. First, the ratio of t/E of each organic film 6 is defined to be 0.025 μm/GPa or more. By the use of the organic film 6 which satisfies the condition, a sufficient stress relaxation effect can be obtained. In addition, the thickness of each ferrite film 7 is defined to be 20 μm or less, and the organic film 6 which has a thickness of 0.1 μm or more is interposed between the ferrite films 7. Therefore, the above-mentioned adhesive strength of 0.1 kN/m or more can be obtained. In consideration of productivity, the ratio of t/E is preferred to be 1000 μm/GPa or less. A total thickness of the ferrite films 7 included in the magnetic film 5 is defined to be 1 μm or more so that the magnetic film 5 which produces a high electromagnetic effect can be obtained. The thickness of each organic film 6 is defined to be 20 μm or less so that a device which uses the magnetic film provided body of the embodiment can be miniaturized.
There is no limitation for a material of the base body 3, provided that the material has tolerance to the solution. For example, the material of the base body 3 may be selected from a group consisting of: various kinds of plastics such as polyimide sheet, polyethylene terephthalate and so on; various kinds of metals such as copper, nickel, silver, gold, tungsten, molybdenum, platinum, palladium, iron, iron alloy and so on; various kinds of organic layered sheets, in other words, various kinds of layered sheets such as paper epoxy, glass epoxy, grass polyester and so on; various kinds of glass; ceramics; and so on.
In the embodiment, a purpose of using the organic film 6 is not to insulate between the ferrite films 7 nor between the ferrite film 7 and an external member. As for a material of the organic film 6, a material having any specific electrical resistance may be used. For example, the organic film 6 may be made of resin selected from a group consisting of phenol resin, epoxy resin, melamine resin, urea resin, unsaturated polyester resin, polyimide, polyethylene, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyvinyl acetate, ABS resin, acrylic resin, polyamide, nylon, polyacetal, polycarbonate, polybutylene terephthalate, polyethylene terephthalate, polyphenylene sulfide, polysulfone, polyethersulfone, polyarylate, polymer liquid crystal, polyamide-imide and one of these resin including metal powder. The organic film 6 may be made of resin which includes magnetic powder. For example, a material of the magnetic powder may be selected from a group consisting of ferrite, Fe, Fe—Co alloy, Fe—Si alloy, Fe system alloy such as Fe—Si—Al, Ni system alloy such as Ni—Fe alloy and so on. Furthermore, the organic film 6 may be a high dielectric constant material made of resin which includes carbon or metal powder.
In the embodiment, there is no limitation to a film formation method of the organic film 6. For example, the organic film 6 may be formed by applying a resin which has moderate fluidity by an applying apparatus such as a spin coater, or the organic film 6 may be formed by a film formation apparatus such as sputtering and so on.
In the embodiment, the ferrite film(s) 7 is formed through the ferrite plating method. A film formation apparatus, for example as shown in
In the embodiment, it is not the ferrite film 7 which is formed directly on the base body 3. However, for example, a magnetic film provided body 10a may comprise a magnetic film 5a formed by forming the ferrite film 7 directly on the base body 3, as shown in
For a property examination of the magnetic film provided body, various magnetic film provided bodies were formed, as listed in the following table. In the table, each of concrete examples 1˜5 is a magnetic film provided body which satisfies a condition according to the present embodiment, while each of comparative examples 1˜5 is a magnetic film provided body which does not satisfy the condition according to the present embodiment.
Hereinafter, a supplemental explanation will be made about a size and a fabrication condition of each of the examples listed in the table.
A size of the base body 3 made of the glass substrate is 50 mm×50 mm×1 mm. A size of the base body 3 made of the polyimide sheet is 50 mm×50 mm×25 mm. The former corresponds to the concrete example 1˜3 and the comparative example 1˜3. The latter corresponds to the concrete example 4 and 5 and the comparative example 4.
In the above-mentioned examples of the organic films 6, “Polyimide A” is a polyimide film which has relatively high Young's modulus (Young's modulus of 4 GPa), and “Polyimide B” is a polyimide film which has relatively low Young's modulus (Young's modulus of 3 GPa). An explanation will be made for a forming method of the polyimide film with taking an example where the polyimide film is formed on a glass substrate. First, a dilute agent was added into and mixed with polyamic acid of a precursor of polyimide. Secondly, the aforementioned mixture was applied on a surface of the glass substrate by a spin coater. An application thickness was adjusted by viscosity of a solution, the number of revolutions of the spin coater, and so on. After that, the glass substrate applied with the solution was heated at 90° C. for 5 minutes, followed by heated at 320° C. for 60 minutes. Thus, the polyimide film was formed on the glass substrate. By adjusting the formation conditions, the organic films 6 can be obtained wherein the organic films 6 is made of the polyimide A of high Young's modulus (4 GPa) or the polyimide B of low Young's modulus (4 GPa).
The organic film 6 of the concrete example 5 is a mixture of epoxy resin and Fe. As for the organic film 6, Fe particle was mixed into pre-polymer of epoxy resin, wherein Fe particle has an average particle diameter of 3 μm and the Fe content was 45 vol %, and thereafter a curing agent was mixed. Next, the mixture was applied so that an average thickness is 2 μm. Furthermore, the applied film was maintained at 100° C. for 6 hours and cured. A specific resistance of the mixture of epoxy resin and Fe formed in the above-described manner was 100 Ωcm.
The ferrite film 7 was formed as follows. As a pre-treatment, a turn table 4 was turned after the base body 3 was disposed on the turn table 4, while deoxidized ion-exchange water was provided on the base body 3 under a heat treatment up to 90° C. Next, nitrogen gas was introduced into the film formation apparatus so that deoxide atmosphere was prepared in the apparatus. Then, the step of supplying the reaction solution for the base body 3 from the reaction solution nozzle 1 and the step of supplying the oxidizing solution for the base body 3 from the oxidizing solution nozzle 2 were carried out while the turn table 4 was turned. In other words, the step of supplying the reaction solution and the step of supplying the oxidizing solution were carried out alternately and repeatedly. Here, flow rate upon the supply of each of the reaction solution and the oxidizing solution was set to 40 ml/min. The reaction solution was prepared by dissolving FeCl2-4H2O, NiCl2-6H2O and ZnCl2 into deoxidized ion-exchange water. The oxidizing solution was prepared by dissolving NaNO2 and CH3COONH4 into deoxidized ion-exchange water. The reaction solution and the oxidizing solution may be formed with reference to, for example, US2009-0047507A1, US2007-0231614A1, or other materials. Here, the explanation was made with taking an example where the ferrite film 7 was formed on the base body 3. Similar method was carried out for a case where the ferrite film 7 was formed on the organic film 6.
Chemical composition of each ferrite film of the concrete example 1˜5 and the comparative example 1˜4 as listed on the table was examined by an inductively coupled plasma spectroscopy (ICPS) method. As a result, each of the ferrite films has an average composition of Ni0.2Zn0.3Fe2.5O4. A scanning electron microscope (SEM) was used for a configuration analysis such as measurement of film thickness.
An examination of the adhesive strengths was carried out in conformance with JIS C5016 (test methods for flexible printed wiring boards). Peel strength was taken as the adhesive strength. In detail, as shown in
An examination of the flexibility was carried out in conformance with JIS C5016 (a test method for flexible printed wiring boards). In detail, as shown in
It is obvious from the tables that for the magnetic film provided bodies of the concrete examples 1˜5, each adhesive strength between the organic film 6 and the ferrite film 7 is 0.1 kN/m or more because each organic film 6 has a thickness of 0.1 μm to 20 μm, both inclusive; each ferrite film(s) 7 has a thickness of 20 μm or less; and a ratio t/E is of 0.025 μm/GPa or more, where “t” indicates the thickness of the organic film, and “E” indicates Young's modulus of the organic film. Accordingly, no exfoliation occurs in the magnetic film provided body 10.
On the other hand, for the magnetic film provided bodies of comparative examples 1˜3, each adhesive strength in the magnetic film provided bodies are 0.1 kN/m or less because the condition such as thickness of the organic films, Young's modulus and thickness of the ferrite are not satisfied. This results in occurrence of the exfoliation between any layers of the magnetic film provided body 10. In the comparative example 4, exfoliation occurred after the 100 thousand times of the bending test. This is caused by the single layered ferrite film 7 formed on the base body 3 made of the organic material.
A ferrite provided body according to the present invention can be used in an inductance element, an impedance element, a magnetic head, a microwave element, a magnetostriction element and a high-frequency magnetic device such as an electromagnetic interference suppressor. Especially, it is suitable in the case where the magnetic film including the ferrite film is required to be relatively thick. The electromagnetic interference suppressor is for suppressing electromagnetic problems caused by interferences of undesired electromagnetic waves in a high frequency region.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2008-289493 | Nov 2008 | JP | national |
| Filing Document | Filing Date | Country | Kind | 371c Date |
|---|---|---|---|---|
| PCT/JP2009/003591 | 7/29/2009 | WO | 00 | 5/11/2011 |
