Claims
- 1. A method for synthesizing boron-doped diamond for improving the oxidation resistance, which comprises:
(a) pressing a mixture of non-diamond carbon powder, at least one of a catalyst or solvent metal powders, and a source of boron to form a dense core; (b) subjecting said dense core to diamond forming high pressure/high temperature (HP/HT) conditions for a time adequate for forming diamond having boron substituted into the diamond structure; and (d) recovering said boron diamond product.
- 2. The process of claim 1, wherein said mixture of non-diamond carbon powder, at least one of a catalyst or solvent metal powders, and a source of boron is compressed at a sufficient pressure to form a dense core substantially devoid of entrapped gases.
- 3. The process of claim 1, wherein said mixture further comprises at least one of a scavenging getter constituent for substantially removing entrapped gases in said dense core.
- 4. The method of claim 1, wherein said mixture further comprises diamond seed crystals.
- 3. The method of claim 1, wherein the amount of boron in said core ranges from about 0.1 to about 0.5 weight-% of the total core.
- 4. The method of claim 1, wherein said boron is selected from B4C, an FeB alloy, metallic boron, and amorphous B powder.
- 5. The method of claim 4, wherein said boron is present from about 0.1 to about 0.5 wt %.
- 6. The method of claim 4, wherein said boron is an amorphous boron powder having a size ranging from between about 5 μm to about 45/50 mesh.
- 7. The method of claim 1, wherein said HP/HT conditions include a temperature ranging from about 1300° to about 2000° C. with corresponding pressures ranging from about 5 to about 10 Gpa.
- 8. A boron doped diamond made by the process of claim 1.
- 9. An article comprising the boron-doped diamond of claim 8.
- 10. The article of claim 9, in the form of a compact, a wire drawing die, a resin bood tool, a metal bond tool, or a saw blade.
- 11. A boron-doped diamond crystal, wherein the dopant boron concentration is uniformly distributed within said diamond crystal, and wherein said diamond crystal is produced in a power cell apparatus at a sufficient high pressure/high temperature (HP/HT) conditions and for a time adequate for said dopant boron to be substituted into the diamond crystal structure.
- 12. The boron-doped diamond crystal of claim 11, wherein said dopant boron is present in an amount of about about 0.1 to about 0.5 wt %.
- 13. The boron-doped diamond crytal of claim 11, wherein said dopant boron is selected from B4C, an FeB alloy, metallic boron, and amorphous B powder.
- 14. The boron-doped diamond crystal of claim 13, wherein said dopant boron is an amorphous boron powder having a size ranging from between about 5 μm to about 45/50 mesh.
- 15. An article comprising the boron-doped diamond of claim 11.
- 16. The article of claim 16, in the form of a compact, a wire drawing die, a resin bood tool, a metal bond tool, or a saw blade.
- 17. A boron-doped diamond characterized by having a weight loss of less than one third of the weight loss of a similar diamond free from said boron dopant.
- 18. The boron-doped diamond of claim 17, further characterized as having a uniformly distributed boron dopant within said diamond and wherein said boron dopant is selected from B4C, an FeB alloy, metallic boron, and amorphous B powder.
- 19. A boron-doped diamond crystal characterized as having a weight loss rate of less than 0.25% per minute at 850° C. in air.
- 20. The boron-doped diamond crystal of claim 18, further characterized as having a weight loss in air beginning at a temperature of 700° C. or higher.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This Application claims rights of priority from U.S. patent application Ser. No. 09/935,957, filed Aug. 23, 2001, which is hereby incorporated by reference.
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
09935957 |
Aug 2001 |
US |
Child |
10262784 |
Oct 2002 |
US |