The present invention relates to the fields of catalytic hydrogenation, hydrogenation catalysts (particularly metal-free catalysts), boron nitride compositions, and catalysts containing frustrated Lewis pairs (FLPs).
Catalytic hydrogenations constitute a prime technology for the conversion of fine and bulk chemicals to their counterparts with reduced redox state. However, catalytic hydrogenations generally rely on rare elements (e.g., Pd, Pt, Rh, Ru, In or Ce). Some of these metals (e.g., In or Ce) act as a Lewis acid in adequate distance from base sites (e.g., OH or O). Such rare elements are generally costly and in limited supply. Present day hydrogenation catalysts also generally need to be operated at elevated temperatures (typically, over 200° C. or 250° C.) and elevated pressure (above 1, 5, or 10 atm). Efforts in developing a hydrogenation catalyst with lower reliance on rare elements and that can be operated at more moderate temperatures and pressures have been largely unsuccessful. Thus, developing such a hydrogenation catalyst would greatly benefit the hydrogenation process and would thus represent a significant advance in the field of catalytic hydrogenation technology.
In one aspect, the present disclosure is directed to a unique form of hexagonal boron nitride in which the ordered lattice structure is punctuated by the presence of highly reactive vacant site defects, also referred to herein as frustrated Lewis pairs (FLPs), unsaturated sites, or unbonded or Lewis B or N sites. As further discussed below, the vacant site defects arise by employing non-stoichiometric molar ratios of boron and nitrogen during the production process. More specifically, the hexagonal boron nitride contains boron atoms and nitrogen atoms present in a B:N molar ratio of 1:4-1:8 or 4:1-8:1 (or more particularly, 1:5-1:7 or 5:1-7:1, or 1:4-1:8, or 1:5:1:7), wherein the foregoing molar ratios provide vacant site defects within the boron nitride hexagonal lattice structure. The hexagonal boron nitride material described herein is advantageously free of costly metals (i.e., “metal-free”) and can be operated at more moderate temperatures and at a lower pressure, which may even be ambient pressure (about 1 atm).
In another aspect, the present disclosure is directed to a method of producing the above described hexagonal boron nitride catalyst containing lattice defects. In preferred embodiments, the method includes heating a molten mixture of NaBH4 and NaNH2 under an inert atmosphere to a temperature of at least 700° C., wherein the molar ratio of NaBH4:NaNH2 is 1:4-1:8 or 4:1-8:1. In some embodiments, the temperature is at least 750° C. or 800° C. In further or alternative embodiments, the molar ratio of NaBH4:NaNH2 may be, for example, 1:5:1:7 or 5:1-7:1, or the molar ratio may be 1:4-1:8, or the molar ration may be 1:5:1:7.
In another aspect, the present disclosure is directed to a method of catalytically hydrogenating an unsaturated organic compound by contacting the above described boron nitride catalyst with hydrogen gas in the presence of a hydrogenation catalyst at a temperature of 80° C.-300° C. In some embodiments, the temperature is more specifically in a range of 80° C.-200° C. or 80° C.-150° C. The catalyst may also have any of the B:N molar ratios provided anywhere above. In typical embodiments, for any of the temperature ranges given, the catalyst may be operated at reduced pressure (e.g., up or less than 5 atm) or at ambient pressure.
As well known, conventional two-dimensional (2D) hexagonal boron nitride (h-BN) is prepared using equimolar amounts of B and N atoms and possesses alternating surface Lewis acid site (B center) and Lewis base site (N center) with a layered honeycomb-like structure and a substantial absence of defects. In contrast, the presently described h-BN material, which is prepared using non-equimolar amounts of B and N, is characterized by a substantial presence of vacant site defects (i.e., FLP-like sites), such as depicted in
In a first aspect, the present disclosure is directed to a catalyst composition containing a boron nitride hexagonal (h-BN) lattice structure in which boron atoms and nitrogen atoms are present in a B:N molar ratio of 1:4-1:8 or 4:1-8:1 and wherein the boron nitride hexagonal lattice structure contains vacant site defects. Since the foregoing molar ratios do not include an equimolar (1:1) ratio, they result in or give rise to (i.e., correspond to) vacant site defects within the boron nitride hexagonal lattice structure.
In a first set of embodiments, the B:N molar ratio is within a range of 1:4-1:8. The B:N molar ratio may more particularly be precisely or about, for example, 1:4, 1:5, 1:6, 1:7, or 1:8, or a range bounded by any two of these values, e.g., 1:4-1:8, 1:4-1:7, 1:4-1:6, 1:4-1:5, 1:5-1:8, 1:5-1:7, 1:5-1:6, 1:6-1:8, 1:6-1:7, or 1:7-1:8.
In a second set of embodiments, the B:N molar ratio is within a range of 4:1 to 8:1. The B:N molar ratio may more particularly be precisely or about, for example, 4:1, 5:1, 6:1, 7:1, or 8:1, or a range bounded by any two of these values, e.g., 4:1-8:1, 4:1-7:1, 4:1-6:1, 4:1-5:1, 5:1-8:1, 5:1-7:1, 5:1-6:1, 6:1-8:1, 6:1-7:1, or 7:1-8:1.
In some embodiments, the molar ratio is exclusively within any of the above ranges of molar ratios, and thus, excludes any molar ratios outside of the range. In some embodiments, any one or more molar ratios or ranges in molar ratios, such as provided above, are excluded. Moreover, the B:N molar ratio may, in some embodiments, be within a range bounded by any molar ratio found in the above first set of embodiments and any molar ratio found in the above second set of embodiments, except that a molar ratio of 1:1 or perhaps a molar ratio in a range of 1:2-2:1 is excluded. For example, the B:N molar ratio may be within a range of 1:4-4:1 or 1:6-6:1, excluding a molar ratio of 1:1 or excluding a molar ratio in a range of 1:2-2:1.
Typically, the h-BN material contains nanopores, i.e., is nanoporous. The nanopores typically have a size of 0.5-5 nm, or more particularly, a size of 0.5-3 nm or 0.5-2 nm. The foregoing sizes may correspond to lattice interatom distances or the size of defects. The size of vacant site defects may, in some cases, be larger than other nanopores in the material, e.g., 3, 4, 5, 6, 7, or 10 nm or within a range bounded by any two of the foregoing values. The nanopores may have any of a variety of shapes, such as a circular, square, or triangular shape.
In another aspect, the present disclosure is directed to methods for producing the presently described h-BN material containing vacant site defects as described above. In the method, a molten mixture of NaBH4 and NaNH2 is heated under an inert atmosphere to a temperature of at least 700° C., wherein the molar ratio of NaBH4:NaNH2 is 1:4-1:8 or 4:1-8:1 or any of the other molar ratios or ranges thereof provided earlier above, excluding a molar ratio of 1:1 or perhaps a ratio in a range of 1:2-2:1. The inert atmosphere is typically substantially devoid of oxygen or any other reactive gas and is typically predominantly or exclusively composed of one or more inert gases, such as nitrogen and/or argon. In various embodiments, the final temperature at which the molten mixture is heated is precisely or about, for example, 700° C., 725° C., 750° C., 775° C., 800° C., 825° C., 850° C., 875° C., or 900° C., or the temperature is within a range bounded by any two of the foregoing values. Typically, the molten mixture is heated at any of the foregoing final temperatures for a period of time, which is typically precisely or at least 0.5 hour, or more typically, precisely or at least 1 hour, 1.5 hours, 2 hours, 2.5 hours, or 3 hours. In some embodiments, the temperature is raised from room temperature to an intermediate temperature (e.g., 400-600° C., 450-550° C., or about 500° C.) at which the molten mixture is maintained for precisely or at least 0.5, 1, or 1.5 hours, followed by raising the temperature, typically at a ramp rate (e.g., precisely, at least, or up to 1, 2, 5, or 10° C./min) to the final temperature of precisely or about, for example, 700° C., 725° C., 750° C., 775° C., 800° C., 825° C., 850° C., 875° C., or 900° C. Typically, the resulting solid material is washed with deionized water to remove sodium-containing byproduct e.g., NaH. Following the washing step, the solid material is typically dried (typically at a temperature of at least 50° C. and up to 150° C.) for at least 3, 6, 9, or 12 hours.
In a first set of embodiments, the NaBH4:NaNH2 molar ratio is within a range of 1:4-1:8. The NaBH4:NaNH2 molar ratio may more particularly be precisely or about, for example, 1:4, 1:5, 1:6, 1:7, or 1:8, or a range bounded by any two of these values, e.g., 1:4-1:8, 1:4-1:7, 1:4-1:6, 1:4-1:5, 1:5-1:8, 1:5-1:7, 1:5-1:6, 1:6-1:8, 1:6-1:7, or 1:7-1:8.
In a second set of embodiments, the NaBH4:NaNH2 molar ratio is within a range of 4:1 to 8:1. The NaBH4:NaNH2 molar ratio may more particularly be precisely or about, for example, 4:1, 5:1, 6:1, 7:1, or 8:1, or a range bounded by any two of these values, e.g., 4:1-8:1, 4:1-7:1, 4:1-6:1, 4:1-5:1, 5:1-8:1, 5:1-7:1, 5:1-6:1, 6:1-8:1, 6:1-7:1, or 7:1-8:1.
In some embodiments, the NaBH4:NaNH2 molar ratio is exclusively within any of the above ranges of molar ratios, and thus, excludes any molar ratios outside of the range. In some embodiments, any one or more molar ratios or ranges in molar ratios, such as provided above, are excluded. Moreover, the NaBH4:NaNH2 molar ratio may, in some embodiments, be within a range bounded by any molar ratio found in the above first set of embodiments and any molar ratio found in the above second set of embodiments, except that a molar ratio of 1:1 or perhaps a molar ratio in a range of 1:2-2:1 is excluded. For example, the NaBH4:NaNH2 molar ratio may be within a range of 1:4-4:1 or 1:6-6:1, excluding a molar ratio of 1:1 or excluding a molar ratio in a range of 1:2-2:1.
In another aspect, the present disclosure is directed to a method of catalytically hydrogenating an unsaturated organic compound by use of the above described h-BN catalyst containing a substantial amount of defects. The unsaturated organic compound may be, for example, an olefin, alkyne, unsaturated oil, aromatic, ketone, aldehyde, imine, nitrile, ester, or carboxylic acid. The reaction temperature is typically at least 80° C. and up to 300° C. In various embodiments, the reaction temperature may be, for example, precisely or about 80° C., 90° C., 100° C., 110° C., 120° C., 130° C., 140° C., 150° C., 180° C., 200° C., 220° C., 250° C., 280° C., or 300° C., or the temperature is within a range bounded by any two of the foregoing values (e.g., 80° C.-200° C. or 80° C.-150° C.). The h-BN catalyst may have any of the B:N molar ratios described above, such as 1:4-1:8, 4:1-8:1, 1:5:1:7, or 5:1-7:1 or any of the other specific values or sub-ranges provided earlier above.
Examples have been set forth below for the purpose of illustration and to describe certain specific embodiments of the invention. However, the scope of this invention is not to be in any way limited by the examples set forth herein.
In this work, H2 activation and dissociation catalyzed by h-BN was achieved by incorporating into the h-BN lattice sterically-hindered vacant defect Lewis acid (“B” center) and Lewis base (“N” center) sites anchored within the rigid lattice of the h-BN scaffold. The concept is schematically shown in
In the molten salts-involved ionothermal procedure, equimolar NaBH4 and NaNH2 reactants were employed as boron and nitrogen sources, respectively. Theoretically, varying the ratio of the starting materials, e.g., by adding more boron source (NaBH4) or nitrogen source (NaNH2), will generate h-BNs with diverse defects within the lattice, thus creating fixed Lewis acid (B) and base (N) sites with an unsaturated bonding type. To demonstrate this, thermal treatment of the NaBH4 and NaNH2 mixtures with various molar ratios, including 1:1, 1:3, 1:5, 1:7, and 1:9, was conducted, and all these batches afforded high-quality h-BN materials denoted as h-BN-1, h-BN-2, h-BN-3, h-BN-4, and h-BN-5, respectively. Near-edge X-ray absorption fine structure (NEXAFS) spectra of the as-afforded h-BNs demonstrated the successful introduction of B and N defects within the h-BN scaffolds with controllable types and ratios. Results for h-BN-1, h-BN-4, and h-BN-5 are shown in
Results of powder X-ray diffraction (PXRD) verified that the atomically periodic architecture of h-BNs matched well with a typical hexagonal structure (JCPDS card no. 01-073-2095) (H. Chen et al., Angew. Chem. Int. Ed., 58 (31), 10626, 2019). The PXRD results for h-BN-1, h-BN-2, h-BN-3, h-BN-4, and h-BN-5 are shown
The chemical structures of the as-afforded h-BNs were characterized by Fourier transform infrared (FTIR) spectra, as shown in
To evaluate the H2 activation potential of these h-BN materials, their surface basicity and acidity properties were measured by temperature programmed desorption (TPD) profiles. As shown in
To demonstrate the H2 activation capability of h-BNs and demonstrate their FLP behavior, H/D isotope scrambling experiments were performed using an H2/D2 mixture (ca. 1:1 v/v) (1 bar) at 100° C. taking h-BN-4 as an example. The results are shown in
In situ diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS) of H2 chemisorption was conducted to study the H-H cleavage capability of h-BN skeletons in h-BN-1, h-BN-4, and h-BN-5. The results are shown in
Comparatively, for h-BN-4, as the temperature increased, three peaks located at 3430, 3550, and 3687 cm−1 were observed, being assigned to the N—H stretching mode (see
Hydrogenation of styrene was selected as a feature reaction to explore the catalytic performance of defect-containing h-BN.
The catalytic activity of h-BN materials fabricated by other methods was also tested for styrene hydrogenation ability. Commercial h-BN showed no catalytic activity. The h-BN counterpart prepared from boron trioxide and urea with relatively low crystallinity possessed no ability to activate H2 under ambient pressure (H. Chen et al., Adv. Funct. Mater., 29 (50), 1906284, 2019). The defects-enriched h-BN nanosheets (h-BNNS) derived from liquid N2 exfoliation gave no yield of ethylbenzene, underscoring the importance of carefully selecting the defect types by successively varying the feeding ratio of B and N source. TPD profiles of these non-active h-BNs revealed the lack of Lewis acid or base sites within their scaffolds.
Notably, the excellent H2 activation performance of h-BN-4 derived herein was further demonstrated by its good reusability, with >99% yield of ethylbenzene being maintained after cycling for five times. An isotope labeling experiment with an H2/D2 (molar ratio of 1:1) mixture in styrene hydrogenation afforded ethylbenzene mixtures with molecular weights (MWs) of 106, 107, and 108, corresponding to the involvement of none, one, and two D atoms in the product, respectively. Successful cleavage of the H-H and D-D bond was verified by the ethylbenzene product with MW=107 derived from the addition of H and D atom (see
In summary, the creation of sterically hindered Lewis acid and base sites in h-BN skeleton was achieved by controlling the feeding ratio of boron and nitrogen sources via the molten salts-derived ionothermal method. The as-afforded h-BNs were able to achieve efficient H2 activation and dissociation under atmosphere pressure via FLP-like behavior. Attractive performance of the corresponding h-BN in a hydrogenation reaction further elucidated that promising progress has been made in this work to construct high-quality metal-free heterogeneous catalysts towards industrial hydrogenation procedures.
While there have been shown and described what are at present considered the preferred embodiments of the invention, those skilled in the art may make various changes and modifications which remain within the scope of the invention defined by the appended claims.
The present application claims benefit of U.S. Provisional Application No. 63/463,616, filed May 3, 2023, all of the contents of which are incorporated herein by reference.
This invention was made with government support under Prime Contract No. DE-AC05-00OR22725 awarded by the U.S. Department of Energy. The government has certain rights in the invention.
Number | Date | Country | |
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63463616 | May 2023 | US |