The present teachings relate generally to the field of buck converters, and more particularly, to switching control thereof.
These teachings relate to switching power supplies (switching converters). These devices are used to efficiently transform voltage and currents at one level to voltage and currents at a different level. Switching converters are particularly important when either high power or battery operation require high efficiency. Switching converters are pervasive throughout many consumer products such as cell phones, PDAs, personal computers, etc. A key feature of the switching power supply is its small size and low cost, which is achieved thru efficient design.
One of the ways to improve the size and cost of switching converters is to optimize the size of the external passive components. This is achieved by optimizing power device topology.
With the advent of deep sub-micron CMOS, power supplies with very low voltage, high tolerance and high currents are required. As a result, passive filter components have to be scaled to a very low impedance, and in particular the output capacitor is selected to be of high quality and large value. This capacitor dominates the size and cost of the switching converters for sub-micron CMOS. In general, a smaller the capacitor means lower cost.
There is a need for power device topologies that allow the output capacitor to be reduced.
Buck DC-to-DC converters are frequently used to provide lower operating voltages as required in various devices that use integrated circuits. Typically a much larger supply voltage is used with a narrow duty cycle to charge an output capacitor through an inductor, with accumulated inductor current maintaining the output voltage when not connected to the higher voltage supply during the off portion of the duty cycle.
This arrangement of having a higher supply voltage for charging the inductor current and a much smaller output voltage for discharging the inductor current causes the step load recovery to be asymmetrical. When the load current steps from the small value to near its maximum value, the voltage across the inductor is the supply voltage minus the output voltage. In this case, the relatively large supply voltage allows the inductor to be charged quickly, and the corresponding output voltage droop is minimized.
When the load current steps from near its maximum value to near its minimum value, the voltage across the inductor is just the output voltage. This relatively small voltage discharges the inductor slowly. This has the unfortunate result of allowing a large output voltage overshoot. This is an inherent limitation of the fundamental buck converter structure.
One method to avoid this problem employs discrete MOSFETs to allow the bulk diode of the synchronous rectifier FET to turn on for a short time. This increases the discharge voltage by the turn-on voltage of the bulk diode. Unfortunately this method is not typically available in the integrated circuit form. In integrated circuit power devices, it is desirable not to turn on the bulk diodes for latch-up reasons. Latch-up is self destructive in most integrated circuits and efforts are made to avoid it. In addition, the improvement in the discharge rate is only increased by the addition of a diode forward drop.
For the above reasons, it would be beneficial to provide improved methods and devices for discharging built up inductor current in buck converters when the converter experience is a substantial drop in load current being drawn there from, without using a larger capacitor to store the extra charge.
The needs of the teachings set forth above as well as further and other needs and advantages of the present teachings are achieved by the embodiments of the teachings described herein below.
In one embodiment, a DC-to-DC buck converter comprises an inductor coupled between an input terminal and one end of a capacitor to conduct an inductor current to the capacitor to produce an output voltage across the capacitor and provide a varying range of load current; a first switch adapted to connect the input terminal to a voltage source; a second switch adapted to connect the input terminal to ground; and a control circuit adapted to control the first and second switches to provide a normal operating sequence to alternatively connect the input terminal to either the voltage source or to ground in response to the output voltage to provide the varying range of load current, wherein the control circuit is adapted to open both the first and second switches together to reduce an increase in the output voltage caused by a substantial reduction in the load current.
The control circuit may be adapted to keep the first switch off and to modulate the second switch to reduce an increase in the output voltage caused by the substantial reduction in the load current.
The converter may further comprise a reverse bias bypass circuit connected across the second switch and adapted to limit voltage across the second switch when the input terminal exhibits a reversed or negative voltage while current through the inductor adjusts to the substantial reduction in the load current. The bypass circuit may include a serially opposed diode and zener diode, wherein the diode is reversed biased during the normal operating sequence and forward biased to a reversed biased zener diode when the inductor terminal exhibits a reversed or negative voltage while current through the inductor is adjusting to the substantial reduction in the load current.
The second switch may be a MOSFET having an isolated bulk, a MESFET having an isolated bulk, an IGBT, a MESFET, a MOSFET, a bipolar transistor or a self isolated switch that does not have a bulk/body connection, such as a III-V FET, for example, but not limited to, a gallium nitrite (GaNi) FET. The converter may further comprise a separate diode connected from each source and drain electrode of the MOSFET to the bulk dielectric and adapted to prevent forward bias of bulk semiconductor junctions in the MOSFET. Each of the separate diodes may be a Schottky diode. The second switch may be a p-bulk MOSFET having an n-well isolated bulk region.
The first and second switches and the control circuit may be constructed as part of the same integrated circuit. The second switch may be constructed as part of a separate integrated circuit from the controller circuit to enhance heat dissipation from the second switch. The second switch may include a pair of series connected N-well MOSFETS having commonly connected source and p-well terminals.
In another embodiment, a method for converting a DC voltage to a lower DC voltage includes the steps of: conducting current from an input terminal, through an inductor to charge a capacitor connected to the inductor at an output terminal and to provide a varying range of load current from the output terminal; alternately switching the input terminal between a supply voltage and a ground potential to produce a desired voltage at the output terminal that is lower than the supply voltage, while providing the varying range of load current; disconnecting the input terminal from both the supply voltage and the ground potential to reduce an increase in voltage at the output terminal caused by a substantial reduction in the load current, sensing voltage at the input terminal and reconnecting the input terminal to ground if the voltage at the input terminal exceeds a predetermined amount.
The step of alternately switching may include the steps of switching the input terminal to ground using a MOSFET having a isolated bulk and protecting semiconductor junctions with the isolated bulk within the MOSFET from becoming forward biased by reverse voltage at the input terminal including bypassing the semiconductor junctions with individual Schottky diodes having a lower forward bias threshold voltage than the semiconductor junctions of the isolated bulk.
In yet another embodiment, the method for converting a DC voltage to a lower DC voltage includes the steps of: conducting current from an input terminal, through an inductor to charge a capacitor connected to the inductor at an output terminal and to provide a varying range of load current from the output terminal; alternately switching the input terminal between a supply voltage and a ground potential to produce a desired voltage at the output terminal that is lower than the supply voltage, while providing the varying range of load current, disconnecting the input terminal from both the supply voltage and the ground potential to reduce an increase in voltage at the output terminal caused by a substantial reduction in the load current and limiting the amount of reverse voltage that can be produced at the input terminal while inductor current is adjusting in response to the substantial reduction in load current, the limiting the amount of reverse voltage includes the step of providing, to a semiconductor switching device used to connect the input terminal to the ground potential, a gate voltage lower than an input terminal voltage.
The control circuit may be adapted to open the first and second switches to reduce an increase in the output voltage caused by the substantial reduction in load current. The converter may further comprise a reverse bias bypass circuit connected across the second switch and adapted to limit reverse voltage across the second switch when the input terminal exhibits a reversed or negative voltage. The bypass circuit may include a serially opposed diode and zener diode, wherein the diode is reversed biased during the normal operating sequence and forward biased to a reversed biased zener diode when the inductor terminal exhibits a reversed or negative voltage.
The second switch may be a MOSFET having an isolated bulk. The converter may further comprise a separate diode connected from each source and drain electrode of the MOSFET to the bulk dielectric and adapted to prevent forward bias of bulk semiconductor junctions in the MOSFET. The second switch may be a p-bulk MOSFET having an n-well isolated bulk region.
The second switch (and also the first switch) may also be a self isolated switch that does not have a bulk/body connection, such as a III-V FET, for example, but not limited to, a gallium nitrite (GaNi) FET.
The first and second switches and the control circuit may be constructed as part of the same integrated circuit. The second switch may be constructed as part of a separate integrated circuit from the controller circuit to enhance heat dissipation from the second switch. The second switch may include a pair of series connected N-well MOSFETS having commonly connected source and p-well terminals
In still another embodiment, a method for converting a DC voltage to a lower DC voltage, comprises the steps of: conducting current from an input terminal, through an inductor to charge a capacitor connected to the inductor at an output terminal and to provide a varying range of load current from the output terminal; alternately switching the input terminal between a supply voltage and a ground potential to produce a desired voltage at the output terminal that is lower than the supply voltage, while providing the varying range of load current including the step of allowing a reverse to voltage to form on the input terminal to reduce an increase in voltage at the output terminal caused by a substantial reduction in the load current.
The method may further comprise the step of keeping the input terminal disconnected from the supply voltage while inductor current adjusts in response to the substantial reduction in load current.
The may further comprise limiting the amount of reverse voltage that can be produced at the input terminal while inductor current is adjusting in response to the substantial reduction in load current. The method may further comprise the step of bypassing a semiconductor switching device used to connect the input terminal to the ground potential with one or more components adapted to limit reverse voltage produced at the input terminal with respect to the ground potential.
The step of alternately switching may include the steps of switching the input terminal to ground using a MOSFET having a isolated bulk and protecting semiconductor junctions with the isolated bulk within the MOSFET from becoming forward biased by reverse voltage at the input terminal including bypassing the semiconductor junctions with individual Schottky diodes having a lower forward bias threshold voltage than the semiconductor junctions of the isolated bulk.
For a better understanding of the present teachings, together with other and further objects thereof, reference is made to the accompanying drawings and detailed description and its scope will be pointed out in the appended claims.
Time point 43 represents a substantial decline in load current being drawn by load 24, which results in an increase in voltage produced at output terminal 15 from the stored energy in inductor 12. Inductor current 34 gradually declines over time period 44, as rectifier switch 28 remains closed 44a and output terminal voltage 32 remains high 44b. Duty cycle plot 40 represents the operation of a normal duty cycle controller and essentially flat-lines during time interval 44 while inductor current is still slowly adjusting to the substantial reduction in load current.
Time point 65 represents a substantial reduction in load current, in response to which inductor current begins to decline and output terminal voltage increases. Synchronous rectifier modulation plot 60 shows switch 28 being turned on during periods 66, 67 to connect input terminal 14 to ground 18. At time point 67a, switch 28 is turned off and remains off, which allows the voltage at input terminal 14 to go negative, which causes reverse conduction in switch 28 and thus an increased voltage drop between terminal 14 and ground 18. The negative or reversed voltage causes a significant increase in negative inductor current to draw down the voltage at output terminal 15 more rapidly. This lowers the maximum value of the output terminal voltage thereby affording some over-voltage protection to load 24. In one instance, the semiconductor switching device 28 used to connect the input terminal to the ground potential is provided a gate voltage lower than the input terminal voltage. The rectifier switch modulation plot 60 shows further modulation of switch 28 at its time 67b. Such additional modulation may be programmed into controller 29 in accordance with the known inductor current decline characteristics of the load for which the converter is intended. Once the inductor current in plot 56 has declined to a suitable level 68 in response to the reduced load current, the normal mode modulation of switches 26, 28 can begin over period 70. In one instance, the voltage at the input terminal is sensed and compared to a predetermined voltage, where the predetermined voltage is indicative of declined (and almost extinguished) inductor current, and the input terminal is reconnected to ground (through switch 28) if the voltage at the input terminal exceeds the predetermined voltage. The duty cycle plot 62 shows active duty cycle control being generated while inductor current is adjusting to the reduced load current.
The determination of a substantial drop in load current may be made by any suitable method. There are a wide variety of known methodologies for controlling duty cycles in buck converters, which generally include monitoring the output voltage over time, generally because of the great variety of load current demands for which such circuits are designed. For this reason, the determination of when a substantial drop in load current exists can have some variety of specific definitions. The present teachings are not intended to be limited to any specific definition of substantial reduction in load current.
Various modifications and changes may be made by persons skilled in the art to the embodiments described above without departing from the scope of the teachings as defined in the appended claims.
This application is a continuation-in-part of co-pending U.S. patent application Ser. No. 12/556,991, entitled BUCK DC-TO-DC CONVERTER AND METHOD, filed on Sep. 10, 2009, which in turn is a continuation of U.S. patent application Ser. No. 11/558,797, filed Nov. 10, 2006, entitled BUCK DC TO DC CONVERTER AND METHOD, which in turn claims priority of U.S. Provisional Application Ser. No. 60/735,679, filed Nov. 11, 2005, entitled INTEGRATED, FAST-DISCHARGE BUCK CONVERTER, all of which are hereby incorporated by reference in their entirety for all purposes.
Number | Name | Date | Kind |
---|---|---|---|
4748351 | Barzegar | May 1988 | A |
5414341 | Brown | May 1995 | A |
6127817 | Chartrefou | Oct 2000 | A |
6212084 | Turner | Apr 2001 | B1 |
6281743 | Doyle | Aug 2001 | B1 |
6441597 | Lethellier | Aug 2002 | B1 |
6879136 | Erisman et al. | Apr 2005 | B1 |
6940189 | Gizara | Sep 2005 | B2 |
6979987 | Kernahan et al. | Dec 2005 | B2 |
7696736 | Latham, II et al. | Apr 2010 | B2 |
20050057229 | Kobayashi | Mar 2005 | A1 |
20050140345 | Iwabuki et al. | Jun 2005 | A1 |
Entry |
---|
Walker, G. et al., An Isolated MOSFET Gate Driver, in Australasian Universities Power Engineering Conference, AUPEC 1996, vol. I, pp. 175-180. |
U.S. Appl. No. 60/735,679, filed Nov. 2005, Latham et al. |
Balogh, L., Design and Application Guide for High Speed MOSFET Gate Drive Circuits, Proc. Power Supply Design Seminar (SEM 1400), 2001. |
IGBT/MOSFET Gate Drive Optocoupler, Vishay Semiconductor Application Note No. 81227, Rev. 1.2, May 20, 2009. |
Andreycak, B., “Practical Considerations in High Performance MOSFET, IGBT and MCT Gate Drive Circuits”, Unitrode Corporation, Application Note U-137, 2001. |
Motto, E. et al., Hybrid ICs Drive High-Power IGBT Modules, Power Electronics Technology, Mar. 2005, pp. 24-34. |
International Search Report dated Feb. 12, 2008 for PCT/US06/60806 filed Nov. 10, 2006. Applicants: L&L Engineering LLC. |
Extended European Search Report dtd. Jul. 15, 2009 for EP 06839843.7 filed Nov. 10, 2006. Applicants: L&L Engineering LLC. |
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20100231188 A1 | Sep 2010 | US |
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60735679 | Nov 2005 | US |
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Parent | 11558797 | Nov 2006 | US |
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