Patent Application
20240322814
The description relates to gate driver devices for high-voltage (HV) applications, in particular to gate driver devices implemented in monolithic Gallium Nitride (GaN) technology.
Such devices may be applied, for instance, in power converters (e.g., chargers, adapters, and the like) for use in various applications (e.g., automotive, industrial, consumer).
Due to increasing energy demand worldwide, improving power conversion efficiency is a desirable feature. In addition, portable devices are becoming smaller and lighter, making heat dissipation more difficult. Research has thus recently focused on overcoming the limitations of conventional silicon-based devices to improve the performance of integrated electronic systems, with a trend towards power systems with smaller size, higher switching frequency, and lower power consumption.
A first step towards improved power conversion systems is represented by System-in-Package (SiP) solutions as exemplified in the circuit block diagram of
As exemplified in
In addition to discrete power switching GaN devices, manufacturing processes for low-voltage transistor have been developed in GaN technology to allow the implementation of monolithic power integrated circuits, embedding both the gate driver and the power switches in the same substrate. The lateral structure of GaN technology offers the possibility of integrating multiple devices and additional function blocks on one die, which are typically designed in a comparable lateral technology such as Si-BCD. Thus, compared to the Si-based standalone gate drivers, integrated drivers reduce the parasitic inductance significantly, which can effectively suppress the ringing in the gate loop, and possibly enhance the reliability of GaN power switches.
However, the design of monolithic GaN integrated circuits presents some limitations due to the early-stage technologies that currently provide only n-channel enhancement-mode (e-mode) and depletion-mode (d-mode) transistors, and do not provide their complementary p-channel transistors, other than p-n junction diodes. The lack of complementary p-channel transistors is a challenge for the implementation of push-pull stages, which are otherwise straightforward in CMOS semiconductor technologies, with symmetrical rise and fall times. Moreover, the lack of complementary transistors may lead to an undesirable increase in static power consumption, especially in digital circuits.
As a result, high-speed logic circuits in GaN technology are currently power consuming and the technology is inefficient to implement complex digital functions. In addition, the design of integrated gate drivers for very high-frequency switching power converters relies on design techniques such as bootstrapping and active pull-up that increase circuitry complexity and static power consumption as well.
Within this framework, several monolithic gate drivers have been described in documents [1] to [9]: [1] Y. C. Liang, R. Sun, Y.-C. Yeo, and C. Zhao, “Development of GaN Monolithic Integrated Circuits for Power Conversion,” 2019 IEEE Custom Integrated Circuits Conference (CICC), Austin, TX, USA, 2019, pp. 1-4, doi: 10.1109/CICC.2019.8780294; [2] M. Cui et al., “Monolithic GaN Half-Bridge Stages with Integrated Gate Drivers for High Temperature DC-DC Buck Converters,” IEEE Access, 2019, Vol. 7, pp. 184375-184384, doi: 10.1109/ACCESS.2019.2958059; [3] R. Sun et al., “All-GaN Power Integration: Devices to Functional Subcircuits and Converter ICs,” IEEE Journal of Emerging and Selected Topics in Power Electronics, Vol. 8, No. 1, March 2020, pp. 31-41, doi: 10.1109/JESTPE.2019.2946418; [4] M. Kaufmann and B. Wicht, “A Monolithic GaN-IC With Integrated Control Loop for 400-V Offline Buck Operation Achieving 95.6% Peak Efficiency,” IEEE Journal of Solid-State Circuits, Vol. 55, No. 12, December 2020, pp. 3169-3178, doi: 10.1109/JSSC.2020.3018404; [5] D. Maksimović, Y. Zhang, and M. Rodríguez, “Monolithic Very High Frequency GaN Switched-Mode Power Converters,” In Proc. of the 2015 IEEE Custom Integrated Circuits Conference (CICC), San Jose, CA, USA, Scp. 2015, pp. 1-4, doi: 10.1109/CICC.2015.7338386; [6] Y. Zhang, M. Rodríguez, and D. Maksimovic, “Very High Frequency PWM Buck Converters Using Monolithic GaN Half-Bridge Power Stages with Integrated Gate Drivers,” IEEE Transactions on Power Electronics, Vol. 31, No. 11, November 2016, pp. 7926-7942, doi: 10.1109/TPEL.2015.2513058; [7] Y.-Y. Kao et al., “Fully Integrated GaN-on-Silicon Gate Driver and GaN Switch with Temperature-Compensated Fast Turn-on Technique for Achieving Switching Frequency of 50 MHz and Slew Rate of 118.3 V/Ns,” IEEE Journal of Solid-State Circuits, Vol. 56, No. 12, December 2021, pp. 3619-3627, doi: 10.1109/JSSC.2021.3103875; [8] D. Kinzer, “GaN Power IC Technology: Past, Present and Future,” In Proc. of the 29th International Symposium on Power Semiconductor Devices & ICs (ISPSD), Sapporo, Japan, 2017, pp. 19-24, doi: 10.23919/ISPSD.2017.7988981; [9] H. Xu et al., “Monolithic Integration of Gate Driver and Protection Modules With P—GaN Gate Power HEMTs,” IEEE Transactions on Industrial Electronics, Vol. 69, No. 7, July 2022, pp. 6784-6793, doi: 10.1109/TIE.2021.3102387. However, these gate drivers have certain shortcomings, such as:
Additionally, comparators in GaN technology have been described in documents to [12]: [10] K. J. Chen, “GaN Smart Power Chip Technology,” 2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Xi′an, China, 2009, pp. 403-407, doi: 10.1109/EDSSC.2009.5394230; H. Wang, A. M. H. Kwan, Q. Jiang and K. J. Chen, “A GaN Pulse Width Modulation Integrated Circuit for GaN Power Converters,” in IEEE Transactions on Electron Devices, vol. 62, no. 4, pp. 1143-1149 Apr. 2015, doi: 10.1109/TED.2015.2396649[12];
S. Pennisi, F. Pulvirenti and K. Samperi, “Frequency Compensation Scheme for a Full GaN OpAmp driving 1-nF load,” 2022 IEEE International Symposium on Circuits and Systems (ISCAS), Austin, TX, USA, 2022, pp. 2042-2046, doi: 10.1109/ISCAS48785.2022.9938006. However, the comparator disclosed in document [10] has a limited output voltage range (not rail to rail), the comparator disclosed in document [11] has a limited supply voltage range, and the comparator disclosed in document [12] has a different architecture (an operational amplifier).
Therefore, there is a need in the art to provide fully integrated GaN driver circuits that improve the reliability, reduce the area and the packaging cost, and/or reduce (e.g., suppress) the parasitic inductances between the driver circuit and the power switches.
One or more embodiments contribute in providing such fully integrated GaN driver circuits, providing a high-speed and low-power gate driver implemented in a monolithic GaN technology on the same substrate with the power transistor(s).
One or more embodiments include a buffer circuit configured to drive a GaN power switch having the features set forth in the claims that follow.
One or more embodiments may relate to a corresponding driver circuit.
The claims are an integral part of the technical teaching provided herein in respect of the embodiments.
In one embodiment, a buffer circuit is configured to drive a GaN power switch. The buffer circuit includes an input node configured to receive an input signal and an output node configured to produce a gate signal for the GaN power switch. The buffer circuit includes a push-pull stage, which includes a first transistor and a second transistor having their conductive channels coupled between a supply voltage node and the output node, as well as a third transistor and a fourth transistor having their conductive channels coupled between the output node and a reference voltage node. The buffer circuit includes a pre-buffer stage configured to receive the input signal and to produce respective driving signals for the first, second, third and fourth transistors to produce the gate signal at the output node in four consecutive phases. In a first phase, the first transistor is conductive, and the second, third and fourth transistors are not conductive. In a second phase, the first and second transistors are conductive, and the third and fourth transistors are not conductive. In a third phase, the third transistor is conductive, and the first, second and fourth transistors are not conductive. In a fourth phase, the third and fourth transistors are conductive, and the first and second transistors are not conductive.
One or more embodiments may thus provide a high-speed and low-power gate driver configured to drive a power transistor, implemented in a monolithic GaN technology, with rail-to-rail driving and reduced power consumption.
In one embodiment, a driver circuit includes an input supply pad configured to receive a supply voltage, an input ground pad configured to receive a ground voltage, an input high-side control pad configured to receive a high-side control signal, an input low-side control pad configured to receive a low-side control signal, and an output pad configured to produce an output driving signal. A level shifter is configured to shift and pass the high-side control signal to a high-side output buffer circuit according to one or more embodiments. A low-side intermediate buffer circuit is configured to pass the low-side control signal to a low-side output buffer circuit according to one or more embodiments. A high-side GaN power transistor is arranged between a high-voltage supply pad and the output pad and is driven by the high-side output buffer circuit. A low-side GaN power transistor is arranged between the output pad and a protected ground pad and is driven by the low-side output buffer circuit.
In one embodiment, a method includes receiving an input signal at an input node of a buffer circuit of a driver circuit and generating a gate signal at an output node of the buffer circuit. Generating the gate signal includes in a first phase, rendering a first transistor conductive and rendering a second transistor, a third transistor, and a fourth transistor of the buffer circuit not conductive. A channel of the first transistor and a channel of the second transistor are each coupled between a supply voltage node and the output node, wherein a channel of the third transistor and a channel of the fourth transistor are each coupled between the output node a reference voltage node. Generating the gate signal includes in a second phase, rending the first and second transistors conductive and rendering the third and fourth transistors not conductive and in a third phase, rendering the third transistor conductive and rendering the first, second and fourth transistors not conductive. Generating the gate signal includes in a fourth phase, rendering the third and fourth transistors conductive and rendering the first and second transistors not conductive. The method includes driving a GaN power switch with the gate signal.
One or more embodiments will now be described, by way of example only, with reference to the annexed figures, wherein:
In the ensuing description, one or more specific details are illustrated, aimed at providing an in-depth understanding of examples of embodiments of this description. The embodiments may be obtained without one or more of the specific details, or with other methods, components, materials, etc. In other cases, known structures, materials, or operations are not illustrated or described in detail so that certain aspects of embodiments will not be obscured.
Reference to “an embodiment” or “one embodiment” in the framework of the present description is intended to indicate that a particular configuration, structure, or characteristic described in relation to the embodiment is included in at least one embodiment. Hence, phrases such as “in an embodiment” or “in one embodiment” that may be present in one or more points of the present description do not necessarily refer to one and the same embodiment. Moreover, particular configurations, structures, or characteristics may be combined in any adequate way in one or more embodiments.
The headings/references used herein are provided merely for convenience and hence do not define the extent of protection or the scope of the embodiments.
Throughout the figures annexed herein, unless the context indicates otherwise, like parts or elements are indicated with like references/numerals and a corresponding description will not be repeated for the sake of brevity.
As anticipated, one or more embodiments relate to a fully integrated GaN driver circuit, e.g., incorporating a monolithic half-bridge power stage and the related driving circuitry in GaN technology (particularly, GaN-on-Si technology), as exemplified in the circuit block diagram of
The fully integrated GaN driver circuit 20 has an input supply node coupled to an input supply pad to receive a supply voltage VCC, an input ground node coupled to an input ground pad to receive a ground (or reference) voltage GND, an input high-side control node coupled to an input high-side control pad to receive a high-side control signal VINH, and an input low-side control node coupled to an input low-side control pad to receive a low-side control signal VINL (e.g., signals VINH and VINL being PWM signals from an external microcontroller). Signals VINH and VINL are buffered by respective input buffers (e.g., comparators) 220 and 221, and the buffered signals are passed to an interlocking and protection circuit 222. Buffers 220 and 221 may implement hysteresis to improve stability of voltage transitions. The interlocking and protection circuit 222 is configured to shut down the power stage in the event of undervoltage and/or overtemperature, and to prevent both power switches of the half-bridge from turning on at the same time if both input signals VINH, VINL are inadvertently asserted (e.g., set to a high logic value) at the same time. A voltage regulator REGI (e.g., a low-dropout linear regulator) is arranged between the supply line VCC and the ground line GND and produces a regulated voltage VREG (e.g., stable and invariant with respect to temperature and supply voltage VCC). The interlocking and protection circuit 222 is supplied between the regulated voltage VREG and the ground voltage GND. A (e.g., high immunity) level shifter 223 shifts and passes the high-side control signal from circuit 222 to a flip-flop FF. The output from flip-flop FF is passed to a high-side output buffer circuit 224. A (e.g., high immunity) low-side intermediate buffer (e.g., comparator) 225 passes the low-side control signal from circuit 222 to a low-side output buffer circuit 226. Buffer 225 may implement hysteresis to improve stability of voltage transitions. A bootstrap diode BD has an anode terminal coupled to the input supply node VCC and a cathode terminal coupled to an output supply node to produce a bootstrap voltage VBOOT. An electrostatic discharge protection circuit 227 (ESD protection) has a first terminal coupled to the input ground node GND and a second terminal coupled to a power ground node GNDL to reciprocally protect the two ground rails (GND and GNDL) from electrostatic discharge (ESD). In addition to protecting from electrical discharges, the ESD protection circuit 227 decouples nodes GND and GNDL to protect node GND from voltage spikes caused by commutations of the power stage. The high-side output buffer circuit 224 drives a high-side GaN HEMT 24 (e.g., the gate terminal thereof). The low-side output buffer circuit 226 drives a low-side GaN HEMT 26 (e.g., the gate terminal thereof). The high-side HEMT 24 is coupled between a high-voltage supply pad VS and an output pad VOUT, and the low-side HEMT 26 is coupled between the output pad VOUT and the power ground pad GNDL, so that an output drive signal is produced at the output pad VOUT. A voltage regulator REGH (e.g., a low-dropout linear regulator) is arranged between the bootstrap line VBOOT and the output line VOUT (e.g., floating ground) and produces a regulated voltage VREGH (e.g., stable and invariant with respect to temperature and supply voltage VBOOT). The flip-flop FF and the high-side output buffer circuit 224 are supplied between the regulated voltage VREGH and the output voltage VOUT (e.g., floating ground). A voltage regulator REGL (e.g., a low-dropout linear regulator) is arranged between the supply line VCC and the power ground line GNDL and produces a regulated voltage VREGL (e.g., stable and invariant with respect to temperature and supply voltage VCC). The low-side intermediate buffer 225 and the low-side output buffer circuit 226 are supplied between the regulated voltage VREGL and the power ground voltage GNDL.
In one or more embodiments, the driver circuit 20 may be implemented as a fully monolithic GaN (e.g., GaN-on-Si) solution, i.e., with all the components implemented in a single GaN (e.g., GaN-on-Si) semiconductor die. Alternatively, as exemplified in
Each output buffer 224, 226 includes a pre-buffer section and a push-pull buffer stage. The pre-buffer section contains four pre-buffer circuits, each of which drives an enhancement-mode transistor of the push-pull buffer stage, as further discussed in the following.
In particular, the output buffer has an input node 300 configured to receive a respective input signal in (e.g., the signal from flip-flop FF for buffer 224 or the signal from intermediate buffer 225 for buffer 226) and an output node 302 configured to produce an output gate driving signal gate (e.g., the signal applied to the gate terminal of power transistor 24 or 26, generally indicated as transistor QPE in
The pre-buffer section includes a first high-side pre-buffer 31H coupled to node 300 to receive signal in, a high-side delay circuit 32H coupled to the output of pre-buffer 31H and configured to produce a delayed replica of the output signal from circuit 31H, a high-side AND logic gate 33H coupled to node 300 and to delay circuit 32H to apply AND logic processing to signal in and to the delayed signal from circuit 32H, and a second high-side pre-buffer 34H coupled to gate 33H to receive the output signal therefrom. The pre-buffer section also includes an inverter logic gate 301 coupled to node 300 and configured to produce the complement in of signal in, a first low-side pre-buffer 31L coupled to gate 301 to receive signal in, a low-side delay circuit 32L coupled to the output of pre-buffer 31L and configured to produce a delayed replica of the output signal from circuit 31L, a low-side AND logic gate 33L coupled to the output of inverter 301 and to delay circuit 32L to apply AND logic processing to signal in and to the delayed signal from circuit 32L, and a second low-side pre-buffer 34L coupled to gate 33L to receive the output signal therefrom. It will be noted that the same or similar operation may be obtained if delay circuit 32H receives signal in instead of the output from circuit 31H, and if delay circuit 32L receives signal in instead of the output from circuit 31L. However, the embodiments exemplified in
The push-pull buffer stage of each output buffer 224, 226 includes a first switch QE1 (e.g., an enhancement-mode GaN transistor) having its current path arranged between a high supply node at voltage V+(e.g., corresponding to voltage VREGH or VREGL) and the output node 302, and a control terminal coupled to the output of pre-buffer 31H to be driven thereby. For instance, transistor QE1 may have a source terminal coupled to node 302, a drain terminal coupled to supply node V+, and a gate terminal coupled to buffer 31H. A resistor R1 may be coupled in series to transistor QE1, e.g., between the drain of transistor QE1 and the supply node V+. The push-pull buffer stage includes a second switch QE2 (e.g., an enhancement-mode GaN transistor) having its current path arranged between the supply node V+ and the output node 302, and a control terminal coupled to the output of pre-buffer 34H to be driven thereby. For instance, transistor QE2 may have a source terminal coupled to node 302, a drain terminal coupled to supply node V+, and a gate terminal coupled to buffer 34H. The push-pull buffer stage includes a third switch QE3 (e.g., an enhancement-mode GaN transistor) having its current path arranged between the output node 302 and a low supply node at voltage V− (e.g., corresponding to voltage VOUT or GNDL), and a control terminal coupled to the output of pre-buffer 31L to be driven thereby. For instance, transistor QE3 may have a drain terminal coupled to node 302, a source terminal coupled to supply node V− (e.g., via a further switch), and a gate terminal coupled to buffer 31L. A further switch QSE (e.g., an enhancement-mode GaN transistor) may be coupled in series to transistor QE3, e.g., between the source of transistor QE3 and the supply node V−. For instance, transistor QSE may have a drain terminal coupled to the source terminal of transistor QE3, a source terminal coupled to supply node V− and a gate terminal coupled to the output node 302. Therefore, transistor QSE has its gate terminal coupled to the gate terminal of power transistor QPE and its source terminal coupled to the source terminal of power transistor QPE, so that transistor QSR reaches the turn-off threshold at the same time as transistor QPE. A resistor R3 may be coupled in parallel to the conductive channel of transistor QSE, e.g., between the drain and source terminals of transistor QSE. The push-pull buffer stage includes a fourth switch QE4 (e.g., an enhancement-mode GaN transistor) having its current path arranged between the supply node V− and the output node 302, and a control terminal coupled to the output of pre-buffer 34L to be driven thereby. For instance, transistor QE4 may have a drain terminal coupled to node 302, a source terminal coupled to supply node V−, and a gate terminal coupled to buffer 34L.
The architecture exemplified in
The pre-buffers 31H, 34H and 31L, 34L included in the gate driver differ on whether they drive transistors QE1 and QE2 or QE3 and QE4, even though the functionality is similar.
In the circuit of
In the circuit of
Each comparator 220, 221, 225 includes an input stage, a differential-to-single-ended stage, and an output stage.
In particular, the comparator has an input node 600 configured to receive a respective input signal vs (e.g., signal VINH for comparator 220, signal VINL for comparator 221, or a signal output by circuit 222 for comparator 225, see
The input stage of the comparator includes a differential source-coupled pair of (well-matched) enhancement-mode transistors QE61 and QE62, a tail current generator including depletion-mode transistor QD65 and optionally resistor R65, and a pair of current generator loads including depletion-mode transistors QD61, QD62 and optionally resistors R61, R62. In particular, e-mode transistor QE61 has a gate terminal coupled to the input node 600 (e.g., the first input node of the differential pair), a source terminal coupled to node 606 (e.g., the tail node of the differential pair), and a drain terminal coupled to node 608 (e.g., the first output node of the differential pair). In particular, e-mode transistor QE62 has a gate terminal coupled to the reference node 604 (e.g., the second input node of the differential pair), optionally via a resistor R67, a source terminal coupled to node 606, and a drain terminal coupled to node 610 (e.g., the second output node of the differential pair). In particular, d-mode transistor QD61 has a drain terminal coupled to a supply node VR (e.g., the regulated voltage VREG for comparators 220 and 221, or the regulated voltage VREGL for comparator 225, see
The differential-to-single-ended stage of the comparator includes a current mirror including a pair of enhancement-mode transistor QE63, QE64 coupled to nodes 608, 610 optionally via resistors R63, R64. In particular, e-mode transistor QE63 has a drain terminal coupled to node 608, optionally via resistor R63, a source terminal coupled to the ground node VG, and a gate terminal coupled its drain terminal. In particular, e-mode transistor QE64 has a drain terminal coupled to node 610, optionally via resistor R64, a source terminal coupled to the ground node VG, and a gate terminal coupled the gate terminal of transistor QE63. Therefore, the current flowing through transistor QE63 is mirrored (optionally scaled) through transistor QE64. The current mirror QE63, QE64 folds and scales down the DC level of the differential signal taken at nodes 608, 610 and produces a single-ended signal at the drain terminal of transistor QE64, referred to as node 612.
The output stage of the comparator includes a pair of cascaded (identical) inverter circuits. The first inverter circuit receives the single-ended signal from node 612 and produces the complement thereof at node 614, and the second inverter circuit receives the complemented signal from node 614 and again produces the complement thereof at the output node 602, as output signal vb. In particular, the first inverter circuit includes a d-mode transistor QD63 and an e-mode transistor QE65 having their conductive channels arranged in series between supply node VR and ground node VG. E-mode transistor QE65 has a source terminal coupled to ground node VG, a gate terminal coupled to node 612, and a drain terminal coupled to node 614. D-mode transistor QD63 has a source terminal coupled to node 614, a drain terminal coupled to supply node VR, and a gate terminal coupled to its source terminal. Further, the node 614 intermediate transistors QE65 and QD63 may be coupled, optionally via resistor R66, to the gate terminal of transistor QE62 to receive the reference voltage vref: In particular, the second inverter circuit includes a d-mode transistor QD64 and an e-mode transistor QE66 having their conductive channels arranged in series between supply node VR and ground node VG. E-mode transistor QE66 has a source terminal coupled to ground node VG, a gate terminal coupled to node 614, and a drain terminal coupled to the output node 602. D-mode transistor QD64 has a source terminal coupled to node 602, a drain terminal coupled to supply node VR, and a gate terminal coupled to its source terminal. The output signal vb is produced at node 602 intermediate transistors QE66 and QD64. It is noted that resistors R66 and R67 may be used to generate voltage hysteresis through positive feedback connected to the reference voltage vref.
It will be noted that, while having been described herein within the context of a fully integrated GaN driver circuit 20, embodiments of comparators implemented in GaN technology as discussed with reference to
One or more embodiments as exemplified herein may thus provide one or more of the following advantages:
A buffer circuit (224, 226) for driving a Gallium Nitride, GaN, power switch (QPE), the buffer circuit (224, 226), may be summarized as including: an input node (300) configured to receive an input signal (in); an output node (302) configured to produce a gate signal (gate) for said GaN power switch (QPE); a push-pull stage, including: a first transistor (QE1) having its conductive channel coupled between a supply voltage node (V+) and said output node(302); a second transistor (QE2) having its conductive channel coupled between said supply voltage node (V+) and said output node(302); a third transistor (QE3) having its conductive channel coupled between said output node(302) and a reference voltage node (V−); and a fourth transistor (QE4) having its conductive channel coupled between said output node(302) and said reference voltage node (V−); and a pre-buffer stage configured to receive said input signal (in) and to produce respective driving signals for said first (QE1), second (QE2), third (QE3) and fourth (QE4) transistors to produce said gate signal (gate) at said output node (302) in four consecutive phases, wherein: in a first phase, said first transistor (QE1) is conductive, and said second (QE2), third (QE3) and fourth (QE4) transistors are not conductive; in a second phase, said first (QE1) and second (QE2) transistors are conductive, and said third (QE3) and fourth (QE4) transistors are not conductive; in a third phase, said third transistor (QE3) is conductive, and said first (QE1), second (QE2) and fourth (QE4) transistors are not conductive; and in a fourth phase, said third (QE3) and fourth (QE4) transistors are conductive, and said first (QE1) and second (QE2) transistors are not conductive.
Said push-pull stage may further include: a first resistor (R1) arranged in series to the conductive channel of said first transistor (QE1); and a fifth transistor (QSE) coupled in parallel to a second resistor (R3), the fifth transistor (QSE) and second resistor (R3) being jointly arranged in series to the conductive channel of said third transistor (QE3), wherein the fifth transistor (QSE) is controlled by said gate signal (gate).
Said first (QE1), second (QE2), third (QE3), fourth (QE4) and fifth (QSE) transistors may be enhancement-mode GaN transistors.
Said pre-buffer stage may include: a first pre-buffer (31H) configured to drive said first transistor (QE1) as a function of said input signal (in); a first delay and logic circuit (32H, 33H) configured to produce a replica of said input signal (in), said replica having rising edges delayed with respect to the rising edges of said input signal (in); a second pre-buffer (34H) configured to drive said second transistor (QE2) as a function of said replica of said input signal (in); a third pre-buffer (31L) configured to drive said third transistor (QE3) as a function of the complement (in) of said input signal (in); a second delay and logic circuit (32L, 33L) configured to produce a replica of the complement (in) of said input signal (in), said replica having rising edges delayed with respect to the rising edges of the complement (in) of said input signal (in); and a fourth pre-buffer (34L) configured to drive said fourth transistor (QE4) as a function of said replica of the complement (in) of said input signal (in).
Said first pre-buffer (31H) and/or said second pre-buffer (34H) may include: a respective input node (400) configured to receive a respective input signal (vin) and a respective output node (404) configured to produce a respective driving signal (Vout); a first depletion transistor (QD1) and a first enhancement transistor (QE5) having their conductive channels arranged in series between said supply voltage node (V+) and said reference voltage node (V−), wherein a gate terminal of said first enhancement transistor (QE5) is coupled to said respective input node (400); a second depletion transistor (QD2) and a second enhancement transistor (QE6) having their conductive channels arranged in series between said supply voltage node (V+) and said reference voltage node (V−), wherein a gate terminal of said second depletion transistor (QD2) is coupled to a gate terminal of said first depletion transistor (QD1) and a gate terminal of said second enhancement transistor (QE6) is coupled to a node (402) intermediate said first depletion transistor (QD1) and said first enhancement transistor (QE5); a first bootstrap capacitor (CB1) coupled between a source terminal of said second depletion transistor (QD2) and a bootstrap node (501); a third enhancement transistor (QE8) having its conductive channel arranged between said supply voltage node (V+) and said bootstrap node (501), and a gate terminal coupled to a drain terminal of said second enhancement transistor (QE6); a fourth enhancement transistor (QE7) having its conductive channel arranged between said bootstrap node (501) and said reference voltage node (V−), and a gate terminal coupled to the gate terminal of said second enhancement transistor (QE6); a third depletion transistor (QD3) and a second bootstrap capacitor (CB1) arranged in series between said supply voltage node (V+) and said bootstrap node (501), wherein a gate terminal of said third depletion transistor (QD3) is coupled to a gate terminal of said first depletion transistor (QD1) and a first terminal of said second bootstrap transistor (CB2) is coupled to said bootstrap node (501); and a fifth enhancement transistor (QE10) and a sixth enhancement transistor (QE9) having their conductive channels arranged in series between a second terminal (502) of said second bootstrap transistor (CB2) and said reference voltage node (V−), wherein a gate terminal of said fifth enhancement transistor (QE10) is coupled to the gate terminal of said third enhancement transistor (QE8) and a gate terminal of said sixth enhancement transistor (QE9) is coupled to the gate terminal of said fourth enhancement transistor (QE7), wherein said respective output node (404) is between said fifth (QE10) and a sixth (QE9) enhancement transistors.
Said third pre-buffer (31L) and/or said fourth pre-buffer (34L) may include: a respective input node (400) configured to receive a respective input signal (vin) and a respective output node (404) configured to produce a respective driving signal (Vout); a first depletion transistor (QD1) and a first enhancement transistor (QE5) having their conductive channels arranged in series between said supply voltage node (V+) and said reference voltage node (V−), wherein a gate terminal of said first enhancement transistor (QE5) is coupled to said respective input node (400); a second depletion transistor (QD2) and a second enhancement transistor (QE6) having their conductive channels arranged in series between said supply voltage node (V+) and said reference voltage node (V−), wherein a gate terminal of said second depletion transistor (QD2) is coupled to a gate terminal of said first depletion transistor (QD1) and a gate terminal of said second enhancement transistor (QE6) is coupled to a node (402) intermediate said first depletion transistor (QD1) and said first enhancement transistor (QE5); a bootstrap capacitor (CB1) coupled between a source terminal of said second depletion transistor (QD2) and said respective output node (404); a third enhancement transistor (QE8) having its conductive channel arranged between said supply voltage node (V+) and said respective output node (404), and a gate terminal coupled to a drain terminal of said second enhancement transistor (QE6); and a fourth enhancement transistor (QE7) having its conductive channel arranged between said respective output node (404) and said reference voltage node (V−), and a gate terminal coupled to the gate terminal of said second enhancement transistor (QE6).
Said third pre-buffer (31L) and/or said fourth pre-buffer (34L) may include a third depletion transistor (QD4) having its conductive channel arranged between said supply voltage node (V+) and said respective output node (404), and a gate terminal coupled to its source terminal.
A driver circuit (20), may be summarized as including: an input supply pad configured to receive a supply voltage (VCC), an input ground pad configured to receive a ground voltage (GND), an input high-side control pad configured to receive a high-side control signal (VINH), an input low-side control pad configured to receive a low-side control signal (VINL), and an output pad configured to produce an output driving signal (VOUT); a level shifter (223) configured to shift and pass said high-side control signal (VINH) to a high-side output buffer circuit (224) according to any of the previous claims; a low-side intermediate buffer circuit (225) configured to pass said low-side control signal (VINL) to a low-side output buffer circuit (226) according to any of the previous claims; a high-side GaN power transistor (24) arranged between a high-voltage supply pad (VS) and said output pad (VOUT) and driven by said high-side output buffer circuit (224); and a low-side GaN power transistor (26) arranged between said output pad (VOUT) and a protected ground pad (GNDL) and driven by said low-side output buffer circuit (226).
Said level shifter (223), said high-side output buffer circuit (224), said low-side intermediate buffer circuit (225), said low-side output buffer circuit (226), said high-side GaN power transistor (24) and said low-side GaN power transistor (26) may be implemented in a single GaN semiconductor substrate, preferably a Gan-on-Si semiconductor substrate.
Said level shifter (223), said low-side intermediate buffer circuit (225), said low-side output buffer circuit (226) and said low-side GaN power transistor (26) may be implemented in a first GaN semiconductor substrate, preferably a Gan-on-Si semiconductor substrate; and said high-side output buffer circuit (224) and said high-side GaN power transistor (24) may be implemented in a second GaN semiconductor substrate, preferably a Gan-on-Si semiconductor substrate.
The driver circuit (20) may further include: a first voltage regulator (REGL) configured to produce a first regulated voltage (VREGL) as a function of said supply voltage (VCC); bootstrap circuitry (BD) configured to produce a bootstrap voltage (VBOOT) as a function of said supply voltage (VCC); and a second voltage regulator (REGH) configured to produce a second regulated voltage (VREGH) as a function of said bootstrap voltage (VBOOT), wherein said low-side output buffer circuit (226) may be supplied by said first regulated voltage (VREGL) and said high-side output buffer circuit (224) may be supplied by said second regulated voltage (VREGH).
Said low-side intermediate buffer circuit (225) may include an input stage, a differential-to-single-ended stage, and an output stage, wherein said input stage may include: an input differential pair of transistors (QE61, QE62), a first transistor (QE61) of the pair being configured to receive an input signal (Vs) at a control terminal thereof, and a second transistor (QE62) of the pair being configured to receive a reference signal (vref) at a control terminal thereof; a first current generator load (QD61, R61) coupled between said first transistor (QE61) and a supply node (VR) of the low-side intermediate buffer circuit (225); a second current generator load (QD62, R62) coupled between said second transistor (QE62) and said supply node (VR) of the low-side intermediate buffer circuit (225); and a tail current generator (QD65, R65) coupled between a tail node (606) of said input differential pair of transistors (QE61, QE62) and a ground node (VG) of the low-side intermediate buffer circuit (225); and wherein said differential-to-single-ended stage may include a current mirror arrangement (QE63, QE64) coupled to first (608) and second (610) output nodes of said input differential pair of transistors (QE61, QE62); and wherein said output stage may include a pair of cascaded inverter circuits, the first inverter circuit (QE65, QD63) being configured to receive a single-ended signal from an output node of said differential-to-single-ended stage, and the second inverter circuit (QE66, QD64) being configured to receive a complemented signal from an output node of said first inverter circuit to produce an output signal (vb) of the low-side intermediate buffer circuit (225).
Without prejudice to the underlying principles, the details and embodiments may vary, even significantly, with respect to what has been described by way of example only, without departing from the extent of protection.
The various embodiments described above can be combined to provide further embodiments. All of the non-patent publications referred to in this specification and/or listed in the Application Data Sheet are incorporated herein by reference, in their entirety. Aspects of the embodiments can be modified, if necessary to employ concepts of the various patents, applications and publications to provide yet further embodiments.
These and other changes can be made to the embodiments in light of the above-detailed description. In general, in the following claims, the terms used should not be construed to limit the claims to the specific embodiments disclosed in the specification and the claims, but should be construed to include all possible embodiments along with the full scope of equivalents to which such claims are entitled. Accordingly, the claims are not limited by the disclosure.
| Number | Date | Country | Kind |
|---|---|---|---|
| 102023000005412 | Mar 2023 | IT | national |
