Patent Application
20250211201
The present invention relates to a bulk acoustic wave filter device.
Use of high-frequency radio waves such as microwaves, millimeter waves, and terahertz waves enables high-speed broadband communications. According to the 5G mobile communication standard, a frequency band close to 6 GHz, referred to as “sub-6”, and the 28 GHz-band are used, and future use of the 100 GHz-band is also studied. Thus, resonators and band-pass filters suited to high frequencies exceeding some gigahertz are demanded. For resonators of electronic devices such as smartphones and the like, and high-frequency filters of communication devices, BAW resonators utilizing Bulk Acoustic Waves (BAW) or BAW filters are used. The thickness of a functional layer that is a constituent of a BAW device is determined by the intended frequency, and the higher the frequency, the thinner, the layer. Since a functional element (or an active element) included in a BAW resonator and the like undergoes acoustic property or electrical property changes due to heat, a configuration that can be less affected by heat is required.
In a known configuration, an acoustic mirror layer, in which a low heat-conductive layer and a high heat-conductive layer are laminated alternately, is provided between a resonator and a support substrate, such that the resonator and the support substrate are joined via a heat bridge (for example, see PTL 1).
PTL 1: Japanese Patent No. 6668347
Elements are being increasingly miniaturized along with increasing demand on electronic and communication devices for adaptation to higher frequencies, and degradation of device functions due to temperature rise during driving of devices is becoming a problem. The publicly-known configuration provided with the heat bridge may require complicated processing steps for forming the heat bridge. A configuration in which an acoustic mirror is surrounded sideways by a heat bridge cannot obtain an efficient heat dissipation property because a heat conduction pass occurs across a low heat-conductive layer. A configuration in which a heat bridge is provided immediately under a resonator has a low resonating property because the heat bridge becomes an obstacle against acoustic wave reflection by an acoustic mirror.
According to one aspect, it is an object of the present invention to provide a bulk acoustic wave filter device having a good heat dissipation property.
In an embodiment, a bulk acoustic wave filter device includes:
In a preferred configuration example, the second layer that has the electrical conductivity has an electrical resistivity of 1.0×10{circumflex over ( )}−3 Ωcm or lower.
A laminate having a good heat dissipation property, and a high-frequency filter device using this are realized.
Heat conduction through thin films mainly encompasses heat conduction by phonons (lattice vibration) and heat conduction by carriers. Silicon oxide films (SiO2) that have been used as low-acoustic-impedance layers of acoustic mirrors so far are insulating materials, and conduct heat predominantly by phonons. In general, heat conduction by carriers is more efficient than heat conduction by phonons, because the mean free path of carriers is long. Heat conduction by carriers is affected by the carrier density, whereas heat conduction by phonons is not directly affected by the carrier density. Thus, in an embodiment, predominant heat conduction by carriers is explored to improve the heat dissipation effect of a functional device utilizing vibration.
In the following, a specific configuration of a bulk acoustic wave filter device according to an embodiment will be described with reference to the drawings. The embodiment specified below is an example for realizing the technical idea of the present disclosure, and is not meant to limit the content of the disclosure. The size, positional relationship, and the like of the constituent elements illustrated in the drawings may be exaggerated in order to facilitate understanding of the invention. The same constituent elements or functions may be referred to by the same names or denoted by the same reference signs, and duplicate descriptions may be omitted to the extent possible. A positional relationship that is described by “above”, “over”, “on”, “in an upper portion”, and the like, or “under”, “in a lower portion”, and the like means a level relationship in the layer lamination direction or the film forming direction, and not in an absolute direction, unless otherwise particularly specified.
As the first layer 16 has a specific acoustic impedance higher than that of the second layer 17, for the sake of expediency, the first layer is referred to as the “high-acoustic-impedance layer 16”, and the second layer is referred to as the “low-acoustic-impedance layer 17”. The embodiment is characterized by at least one low-acoustic-impedance layer 17 being made of an electrically-conductive oxide.
When a resonant vibration is transmitted to the acoustic multilayer film 18 through the insulating layer 19, the resonant vibration energy is reflected by the acoustic multilayer film 18. The speed at which the waves (acoustic waves) of the vibration propagate the high-acoustic-impedance layer 16 and at which they propagate the low-acoustic-impedance layer 17 are different. With a film thickness design that facilitates interference and mutual enhancement of reflected waves at the interfaces of the layers constituting the acoustic multilayer film 18, the resonant vibration energy is caused to return in the direction to where the acoustic waves are incident without being affected by the support substrate 11, while heat energy is caused to dissipate in the direction to the support substrate 11.
The high-acoustic-impedance layer 16 is made of a material having a high density or bulk modulus, such as tungsten (W), molybdenum (Mo), tantalum oxide (Ta2O5), zinc oxide (ZnO), or the like. The low-acoustic-impedance layer 17 is made of a material having a density or bulk modulus lower than that of the high-acoustic-impedance layer 16, and selection of a material having an electrical conductivity realizes heat conduction by carriers. The range of the material's electrical resistivity is preferably 1.0×10{circumflex over ( )}−3 Ωcm or lower, more preferably 8.0×10{circumflex over ( )}−4 Ωcm or lower, and yet more preferably 5.0×10{circumflex over ( )}−4 Ωcm or lower. In the following description, “electrical resistivity” may simply be referred to as “resistivity”.
As the low-acoustic-impedance layer 17, an electrically-conductive oxide such as indium tin oxide (ITO), Al-doped zinc oxide (AZO), In-doped zinc oxide (IZO), fluorine-doped tin oxide (FTO), Ga-doped zinc oxide (GZO), antimony-doped tin oxide (ATO), phosphorus-doped tin oxide (PTO), and the like is used. In general, these materials are used as transparent electrically-conductive films. As described below, the heat conductivity of the low-acoustic-impedance layer 17 is 3 W/mK or higher, and more preferably 3.35 W/mK or higher. The low-acoustic-impedance layer 17 may be an amorphous layer or a mainly amorphous layer. The low-acoustic-impedance layer 17 being a mainly amorphous layer can inhibit increase of stress in the high-acoustic-impedance layer 16.
The high-acoustic-impedance layer 16 and the low-acoustic-impedance layer 17 are formed over support substrate 11 by sputtering or the like. Use of an electrically-conductive oxide as the low-acoustic-impedance layer 17 can realize heat diffusion by carriers, eliminating the need for complicated processing steps for providing a heat bridge or the like.
The support substrate 11 is a desirably selected substrate that can support the acoustic multilayer film 18. A semiconductor substrate such as silicon (Si) and the like, or an inorganic dielectric substrate such as MgO, sapphire, and the like, or a plastic substrate may be used. When using a flexible substrate as the support substrate 11, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), acrylic-based resins, cycloolefin-based polymers, polyimide (PI), thin-film glass and the like may be used. The insulating layer 19 provided on a surface on a side opposite to the support substrate 11 electrically insulates the acoustic multilayer film 18 from an active element (a resonator or the like) connected to the acoustic multilayer film 18.
The first electrode layer 12 and the second electrode layer 14 are made of an electrically-conductive material. For example, as the electrically-conductive material, Mo, W, Pr, Au, Ru, Ir, Al, Cu, and the like may be used. As the material of the piezoelectric layer 13, wurtzite crystals, perovskite crystals, and the like may be used. A predetermined amount of an impurity element may be added as a sub component to any of these types of crystal materials serving as a main component. As the wurtzite piezoelectric material, zinc oxide (ZnO), aluminum nitride (AlN), gallium nitride (GaN), and the like may be used.
When a high-frequency wave is input into the resonator 15, the resonator resonantly vibrates at a specific frequency corresponding to the film thickness of the piezoelectric layer 13. When the resonator 15 is driven, it generates a resonant vibration energy, and also generates heat through electrical driving. The resonant vibration energy transmitted to the acoustic multilayer film 18 through the insulating layer 19 is reflected by the acoustic multilayer film 18, thereby returning to the resonator 15 and becoming trapped between the first electrode layer 12 and the second electrode layer 14. The trapped vibration is extracted as an electrical signal via the first electrode layer 12 and the second electrode layer 14.
The heat generated by driving of the resonator 15 is conducted to the support substrate 11 side by the acoustic multilayer film 18. The low-acoustic-impedance layer 17 having a heat conductivity of 3 W/mK or higher can efficiently conduct heat to the support substrate 11 side.
The laminate 40 includes, on a support substrate 11, the acoustic multilayer film 28 in which a high-acoustic-impedance layer 26 and a low-acoustic impedance layer 27-1 or 27-2 are laminated alternately. In the acoustic multilayer film 28, the low-acoustic-impedance layer 27-2 that is on the side opposite to the support substrate 11 to be connected to an active element such as a piezoelectric element, a resonator, or the like may be made of an insulating material, and the other low-acoustic-impedance layers 27-1 may be made of an electrically-conductive oxide. This configuration does not need to be provided with a particular insulating layer over the acoustic multilayer film 28. Since the occupation ratio of the insulating low-acoustic-impedance layer 27-2 in the acoustic multilayer film 28 is small, heat can be efficiently conducted to the support substrate 11 by the high-acoustic impedance layers 26 and the low-acoustic-impedance layers 27-1 made of an electrically-conductive oxide.
The configuration of the resonator 15 is the same as that of the resonator 15 of
When a high-frequency wave is input into the resonator 15, the resonator resonantly vibrates at a specific frequency corresponding to the film thickness of the piezoelectric layer 13. When the resonator 15 is driven, it generates a resonant vibration energy, and also generates heat through electrical driving. The resonant vibration energy transmitted to the acoustic multilayer film 28 from the resonator 15 is reflected by the acoustic multilayer film 28, thereby returning to the resonator 15 and becoming trapped between the first electrode layer 12 and the second electrode layer 14. The trapped vibration is extracted as an electrical signal via the first electrode layer 12 and the second electrode layer 14.
The configurations of
κ=ρcλ
ρ represents density, and c represents a specific heat. The heat resistance R is calculated by the following formula.
d represents film thickness.
In Example 1, a silicon substrate was used as a substrate, and a high-acoustic-impedance layer was made of W, and a low-acoustic-impedance layer was made of ITO. In a case where the center frequency of the high-frequency wave to be applied is 2 GHz, the center wavelength of the acoustic wave that would propagate the high-acoustic-impedance layer would be approximately 2,600 nm. The thickness of the high-acoustic-impedance layer was set to 650 nm, which was ¼ the center wavelength of the acoustic wave. The center wavelength of the acoustic wave that would propagate ITO of the low-acoustic-impedance layer would be approximately 2,165 nm, and the thickness of the ITO layer was set to 541 nm. ITO having a resistivity of 3.3×10{circumflex over ( )}−4 Ωcm had a sufficient electrical conductivity to cause heat conduction by carriers. Here, the heat conductivity of the high-acoustic-impedance layer was 5.06×10 (W/mK), and the heat conductivity of the low-acoustic-impedance layer was 5.95 (W/mk). The heat resistance of the low-acoustic-impedance layer was 9.08×10{circumflex over ( )}−8 (m2K/W), the heat resistance of the high-acoustic-impedance layer was 1.28×10{circumflex over ( )}−8 (m2K/W), and the total heat resistance was 1.04×10{circumflex over ( )}−7 (m2K/W). It can be seen that ITO had a very good heat conductivity, and that the acoustic multilayer film as a whole had a low heat resistance and a good heat conduction property.
In Example 2, a silicon substrate was used as a substrate, and a high-acoustic-impedance layer was made of W, and a low-acoustic-impedance layer was made of IZO. The thickness of the high-acoustic-impedance layer was set to 650 nm as in Example 1. The center wavelength of the acoustic wave that would propagate IZO of the low-acoustic-impedance layer would be approximately 2,035 nm, and the thickness of the IZO layer was set to 509 nm. IZO having a resistivity of 4.1×10{circumflex over ( )}−4 Ωcm had a sufficient electrical conductivity to cause heat conduction by carriers. Here, the heat conductivity of the high-acoustic-impedance layer was 5.06×10 (W/mK), and the heat conductivity of the low-acoustic-impedance layer was 3.35 (W/mk). The heat resistance of the low-acoustic-impedance layer was 1.52×10{circumflex over ( )}−7 (m2K/W), the heat resistance of the high-acoustic-impedance layer was 1.28×10{circumflex over ( )}−8 (m2K/W), and the total heat resistance was 1.65×10{circumflex over ( )}−7 (m2K/W). The acoustic multilayer film as a whole had a low heat resistance and a good heat conduction property.
In Example 3, a silicon substrate was used as a substrate, and a high-acoustic-impedance layer was made of W, and a low-acoustic-impedance layer was made of AZO. The thickness of the high-acoustic-impedance layer was set to 650 nm as in Example 1. The center wavelength of the acoustic wave that would propagate AZO of the low-acoustic-impedance layer would be approximately 2,052 nm, and the thickness of the AZO layer was set to 538 nm. AZO having a resistivity of 4.0×10{circumflex over ( )}−4 Ωcm had a sufficient electrical conductivity to cause heat conduction by carriers. Here, the heat conductivity of the high-acoustic-impedance layer was 5.06×10 (W/mK), and the heat conductivity of the low-acoustic-impedance layer was 4.89 (W/mk). The heat resistance of the low-acoustic-impedance layer was 1.10×10{circumflex over ( )}−7 Ωcm (m2K/W), the heat resistance of the high-acoustic-impedance layer was 1.28×10{circumflex over ( )}−8 (m2K/W), and the total heat resistance was 1.23×10{circumflex over ( )}−7 (m2K/W). AZO had a good heat conductivity, and the acoustic multilayer film as a whole had a low heat resistance and a good heat conduction property.
In Example 4, a high-acoustic-impedance layer was made of W, and a low-acoustic-impedance layer was made of ITO on a silicon substrate as in Example 1. Unlike in Example 1, the center frequency of the high-frequency wave to be applied was set to 6 GHz. In this case, the center wavelength of the acoustic wave that would propagate the high-acoustic-impedance layer would be approximately 868 nm, and the thickness of the high-acoustic-impedance layer was set to 217 nm. The center wavelength of the acoustic wave that would propagate the ITO layer would be approximately 720 nm, and the thickness of the ITO layer was set to 180 nm. ITO having a resistivity of 3.3×10{circumflex over ( )}−4 Ωcm had a sufficient electrical conductivity to cause heat conduction by carriers. Here, the heat conductivity of the high-acoustic-impedance layer was 5.06×10 (W/mK), and the heat conductivity of the low-acoustic-impedance layer was 5.95 (W/mk). The heat resistance of the low-acoustic-impedance layer was 3.3×10{circumflex over ( )}−8 (m2K/W), the heat resistance of the high-acoustic-impedance layer was 4.28×10{circumflex over ( )}−9 (m2K/W), and the total heat resistance was 3.64×10{circumflex over ( )}−8 (m2K/W). ITO had a good heat conductivity, and the acoustic multilayer film as a whole had a low heat resistance in response to the 6-GHz resonant vibration and a good heat conduction property.
In Example 5, a high-acoustic-impedance layer was made of W, and a low-acoustic-impedance layer was made of IZO on a silicon substrate as in Example 2. Unlike in Example 2, the center frequency of the high-frequency wave to be applied was set to 6 GHz. The thickness of the high-acoustic-impedance layer was set to 217 nm, and the thickness of the IZO layer was set to 170 nm. IZO having a resistivity of 4.1×10{circumflex over ( )}−4 Ωcm had a sufficient electrical conductivity to cause heat conduction by carriers. Here, the heat conductivity of the high-acoustic-impedance layer was 5.06×10 (W/mK), and the heat conductivity of the low-acoustic-impedance layer was 3.35 (W/mk). The heat resistance of the low-acoustic-impedance layer was 5.06×10{circumflex over ( )}−8 (m2K/W), the heat resistance of the high-acoustic-impedance layer was 4.28×10{circumflex over ( )}−9 (m2K/W), and the total heat resistance was 5.49×10{circumflex over ( )}−8 (m2K/W). The acoustic multilayer film as a whole had a low heat resistance in response to the 6-GHz resonant vibration and a good heat conduction property.
In Example 6, a high-acoustic-impedance layer was made of W, and a low-acoustic-impedance layer was made of AZO on a silicon substrate as in Example 3. Unlike in Example 3, the center frequency of the high-frequency wave to be applied was set to 6 GHz. The thickness of the high-acoustic-impedance layer was set to 217 nm, and the thickness of the AZO layer was set to 170 nm. AZO having a resistivity of 4.0×10{circumflex over ( )}−4 Ωcm had a sufficient electrical conductivity to cause heat conduction by carriers. Here, the heat conductivity of the high-acoustic-impedance layer was 5.06×10 (W/mK), and the heat conductivity of the low-acoustic-impedance layer was 4.89 (W/mk). The heat resistance of the low-acoustic-impedance layer was 3.47×10{circumflex over ( )}−8 (m2K/W), the heat resistance of the high-acoustic-impedance layer was 4.28×10{circumflex over ( )}−9 (m2K/W), and the total heat resistance was 3.90×10{circumflex over ( )}−8 (m2K/W). AZO had a good heat conductivity, and the acoustic multilayer film as a whole had a low heat resistance in response to the 6-GHz resonant vibration and a good heat conduction property.
In Example 7, a high-acoustic-impedance layer was made of W, and a low-acoustic-impedance layer was made of ITO on a silicon substrate as in Example 1. Unlike in Example 1, the center frequency of the high-frequency wave to be applied was set to 3 GHz. The thickness of the high-acoustic-impedance layer was set to 433 nm. The thickness of the low-acoustic-impedance (ITO) was set to 360 nm. The materials of the low-acoustic-impedance layer and the high-acoustic-impedance layer were ITO and W, respectively, as in Example 1, and had the same heat conductivities as in Example 1, respectively. The heat resistance of the low-acoustic-impedance layer was 6.06×10{circumflex over ( )}−8 (m2K/W), the heat resistance of the high-acoustic-impedance layer was 8.56×10{circumflex over ( )}−9 (m2K/W), and the total heat resistance was 6.91×10{circumflex over ( )}−8 (m2K/W). ITO had a good heat conductivity, and the acoustic multilayer film as a whole had a low heat resistance in response to the 6-GHz resonant vibration and a good heat conduction property.
In Example 8, a high-acoustic-impedance layer was made of W, and a low-acoustic-impedance layer was made of IZO on a silicon substrate as in Example 2. Unlike in Example 2, the center frequency of the high-frequency wave to be applied was set to 3 GHz. The thickness of the high-acoustic-impedance layer was set to 433 nm, and the thickness of the IZO layer was set to 339 nm. The materials of the low-acoustic-impedance layer and the high-acoustic-impedance layer were IZO and W, respectively, as in Example 2, and had the same heat conductivities as in Example 2, respectively. The heat resistance of the low-acoustic-impedance layer was 1.01×10{circumflex over ( )}−7 (m2K/W), the heat resistance of the high-acoustic-impedance layer was 8.56×10{circumflex over ( )}−9 (m2K/W), and the total heat resistance was 1.10×10{circumflex over ( )}−8 (m2K/W). The acoustic multilayer film as a whole had a low heat resistance in response to the 3-GHz resonant vibration and a good heat conduction property.
In Example 9, a high-acoustic-impedance layer was made of W, and a low-acoustic-impedance layer was made of AZO on a silicon substrate as in Example 3. Unlike in Example 3, the center frequency of the high-frequency wave to be applied was set to 3 GHz. The thickness of the high-acoustic-impedance layer was set to 433 nm, and the thickness of the AZO layer was set to 358 nm. The materials of the low-acoustic-impedance layer and the high-acoustic-impedance layer were AZO and W, respectively, as in Example 3, and had the same heat conductivities as in Example 3, respectively. The heat resistance of the low-acoustic-impedance layer was 7.33×10{circumflex over ( )}−8 (m2K/W), the heat resistance of the high-acoustic-impedance layer was 8.56×10{circumflex over ( )}−9 (m2K/W), and the total heat resistance was 8.18×10{circumflex over ( )}−8 (m2K/W). AZO had a good heat conductivity, and the acoustic multilayer film as a whole had a low heat resistance in response to the 3-GHz resonant vibration and a good heat conduction property.
In Example 10, a high-acoustic-impedance layer was made of W, and a low-acoustic-impedance layer was made of ITO on a silicon substrate as in Example 1. Unlike in Example 1, the center frequency of the high-frequency wave to be applied was set to 4 GHz. The thickness of the high-acoustic-impedance layer was set to 325 nm. The thickness of the low-acoustic-impedance (ITO) was set to 270 nm. The materials of the low-acoustic-impedance layer and the high-acoustic-impedance layer were ITO and W, respectively, as in Example 1, and had the same heat conductivities as in Example 1, respectively. The heat resistance of the low-acoustic-impedance layer was 4.54×10{circumflex over ( )}−8 (m2K/W), the heat resistance of the high-acoustic-impedance layer was 6.42×10{circumflex over ( )}−9 (m2K/W), and the total heat resistance was 5.18×10{circumflex over ( )}−8 (m2K/W). ITO had a good heat conductivity, and the acoustic multilayer film as a whole had a low heat resistance in response to the 4-GHz resonant vibration and a good heat conduction property.
In Example 8, a high-acoustic-impedance layer was made of W, and a low-acoustic-impedance layer was made of IZO on a silicon substrate as in Example 2. Unlike in Example 2, the center frequency of the high-frequency wave to be applied was set to 4 GHz. The thickness of the high-acoustic-impedance layer was set to 325 nm, and the thickness of the IZO layer was set to 254 nm. The materials of the low-acoustic-impedance layer and the high-acoustic-impedance layer were IZO and W, respectively, as in Example 2, and had the same heat conductivities as in Example 2, respectively. The heat resistance of the low-acoustic-impedance layer was 7.58×10{circumflex over ( )}−8 (m2K/W), the heat resistance of the high-acoustic-impedance layer was 6.42×10{circumflex over ( )}−9 (m2K/W), and the total heat resistance was 8.23×10{circumflex over ( )}−8 (m2K/W). The acoustic multilayer film as a whole had a low heat resistance in response to the 4-GHz resonant vibration and a good heat conduction property.
In Example 12, a high-acoustic-impedance layer was made of W, and a low-acoustic-impedance layer was made of AZO on a silicon substrate as in Example 3.Unlike in Example 3, the center frequency of the high-frequency wave to be applied was set to 4 GHz. The thickness of the high-acoustic-impedance layer was set to 325 nm, and the thickness of the AZO layer was set to 269 nm. The materials of the low-acoustic-impedance layer and the high-acoustic-impedance layer were AZO and W, respectively, as in Example 3, and had the same heat conductivities as in Example 3, respectively. The heat resistance of the low-acoustic-impedance layer was 5.50×10{circumflex over ( )}−8 (m2K/W), the heat resistance of the high-acoustic-impedance layer was 6.42×10{circumflex over ( )}−9 (m2K/W), and the total heat resistance was 6.14×10{circumflex over ( )}−8 (m2K/W). AZO had a good heat conductivity, and the acoustic multilayer film as a whole had a low heat resistance in response to the 4-GHz resonant vibration and a good heat conduction property.
In Example 13, a high-acoustic-impedance layer was made of W, and a low-acoustic-impedance layer was made of ITO on a silicon substrate as in Example 1.Unlike in Example 1, the center frequency of the high-frequency wave to be applied was set to 5 GHz. The thickness of the high-acoustic-impedance layer was set to 260 nm. The thickness of the low-acoustic-impedance (ITO) was set to 216 nm. The materials of the low-acoustic-impedance layer and the high-acoustic-impedance layer were ITO and W, respectively, as in Example 1, and had the same heat conductivities as in Example 1, respectively. The heat resistance of the low-acoustic-impedance layer was 3.63×10{circumflex over ( )}−8 (m2K/W), the heat resistance of the high-acoustic-impedance layer was 5.14×10{circumflex over ( )}−9 (m2K/W), and the total heat resistance was 4.15×10{circumflex over ( )}−8 (m2K/W). ITO had a good heat conductivity, and the acoustic multilayer film as a whole had a low heat resistance in response to the 5-GHz resonant vibration and a good heat conduction property.
In Example 14, a high-acoustic-impedance layer was made of W, and a low-acoustic-impedance layer was made of IZO on a silicon substrate as in Example 2.Unlike in Example 2, the center frequency of the high-frequency wave to be applied was set to 5 GHz. The thickness of the high-acoustic-impedance layer was set to 260 nm, and the thickness of the IZO layer was set to 204 nm. The materials of the low-acoustic-impedance layer and the high-acoustic-impedance layer were IZO and W, respectively, as in Example 2, and had the same heat conductivities as in Example 2, respectively. The heat resistance of the low-acoustic-impedance layer was 6.07×10{circumflex over ( )}−8 (m2K/W), the heat resistance of the high-acoustic-impedance layer was 5.14×10{circumflex over ( )}−9 (m2K/W), and the total heat resistance was 6.58×10{circumflex over ( )}−8 (m2K/W). The acoustic multilayer film as a whole had a low heat resistance in response to the 5-GHz resonant vibration and a good heat conduction property.
In Example 15, a high-acoustic-impedance layer was made of W, and a low-acoustic-impedance layer was made of AZO on a silicon substrate as in Example 3. Unlike in Example 3, the center frequency of the high-frequency wave to be applied was set to 5 GHz. The thickness of the high-acoustic-impedance layer was set to 260 nm, and the thickness of the AZO layer was set to 215 nm. The materials of the low-acoustic-impedance layer and the high-acoustic-impedance layer were AZO and W, respectively, as in Example 3, and had the same heat conductivities as in Example 3, respectively. The heat resistance of the low-acoustic-impedance layer was 4.40×10{circumflex over ( )}−8 (m2K/W), the heat resistance of the high-acoustic-impedance layer was 5.14×10{circumflex over ( )}−9 (m2K/W), and the total heat resistance was 4.91×10{circumflex over ( )}−8 (m2K/W). AZO had a good heat conductivity, and the acoustic multilayer film as a whole had a low heat resistance in response to the 4-GHz resonant vibration and a good heat conduction property.
Referring to
In Comparative Example 2, a high-acoustic-impedance layer was made of W, and a low-acoustic-impedance layer was made of SiO2 on a silicon substrate as in Comparative Example 1. However, a high-frequency wave having a center frequency of 6 GHz was applied. The thickness of the high-acoustic-impedance layer was set to 217 nm, and the thickness of the SiO2 layer, which was the low-acoustic-impedance layer, was set to 248 nm. SiO2, which is an insulating material in general and has a resistivity of 10{circumflex over ( )}6 Ωcm or higher, would not cause heat conduction by carriers. Here, the heat conductivity of the high-acoustic-impedance layer was 5.06×10 (W/mK), and the heat conductivity of the low-acoustic-impedance layer was 1.31 (W/mk), which was low. The heat resistance of the high-acoustic-impedance layer was 4.28×10{circumflex over ( )}−9 (m2K/W) whereas the heat resistance of the low-acoustic-impedance layer was 1.89×10{circumflex over ( )}−7 (m2K/W), which was high, resulting in a high total heat resistance of 1.94×10{circumflex over ( )}−7 (m2K/W). Because SiO2 had a poor heat resistivity and a high heat resistance, the acoustic multilayer film as a whole had a high heat resistance as well. This acoustic multilayer film could not dissipate heat sufficiently in response to the 6-GHz resonant vibration, and there was a risk that the resonance property would degrade.
In Comparative Example 3, a silicon substrate was used as a substrate, a high-acoustic-impedance layer was made of Mo, a low-acoustic-impedance layer was made of SiO2, and a high-frequency wave having a center frequency of 2 GHz was applied. The center wavelength of the acoustic wave that would propagate Mo would be approximately 3,096 nm, and the thickness of the Mo layer was set to 774 nm. The thickness of the SiO2 low-acoustic-impedance layer was set to 745 nm as in Comparative Example 1. SiO2, which is an insulating material in general and has a resistivity of 10{circumflex over ( )}6 Ωcm or higher, would not cause heat conduction by carriers. Here, the heat conductivity of the high-acoustic-impedance layer was 3.53×10 (W/mK), which was sufficiently high, whereas the heat conductivity of the low-acoustic-impedance layer was 1.31 (W/mk), which was low. The heat resistance of the high-acoustic-impedance layer was 2.19×10{circumflex over ( )}−8 (m2K/W) whereas the heat resistance of the low-acoustic-impedance layer was 5.68×10{circumflex over ( )}−7 (m2K/W), which was high, resulting in a high total heat resistance of 5.90×10{circumflex over ( )}−7 (m2K/W). Because SiO2 had a poor heat resistivity and a high heat resistance, the acoustic multilayer film as a whole had a high heat resistance as well. This acoustic multilayer film could not dissipate heat sufficiently in response to the 2-GHz resonant vibration, and there was a risk that the resonance property would degrade.
In Comparative Example 4, a silicon substrate was used as a substrate, a high-acoustic-impedance layer was made of Zno, a low-acoustic-impedance layer was made of SiO2, and a high-frequency wave having a center frequency of 2 GHz was applied. The center wavelength of the acoustic wave that would propagate ZnO would be approximately 3,776 nm, and the thickness of the Zno layer was set to 944 nm. The thickness of the SiO2 low-acoustic-impedance layer was set to 745 nm as in Comparative Examples 1 and 3. SiO2, which is an insulating material in general and has a resistivity of 106 Ωcm or higher, would not cause heat conduction by carriers. Here, the heat conductivity of the high-acoustic-impedance layer was 1.94×10 (W/mK), and the heat conductivity of the low-acoustic-impedance layer was 1.31 (W/mk). The heat resistance of the high-acoustic-impedance layer was 4.97×10−8 (m2K/W) whereas the heat resistance of the low-acoustic-impedance layer was 5.68×10−7 (m2K/W), which was high, resulting in a high total heat resistance of 6.18×10−7 (m2K/W). Because SiO2 had a poor heat resistivity and a high heat resistance, the acoustic multilayer film as a whole had a high heat resistance as well. This acoustic multilayer film could not dissipate heat sufficiently in response to the 2-GHz resonant vibration, and there was a risk that the resonance property would degrade.
In Comparative Example 5, a silicon substrate was used as a substrate, a high-acoustic-impedance layer was made of W, a low-acoustic-impedance layer was made of Al2O3, and a high-frequency wave having a center frequency of 2 GHz was applied. The thickness of the W layer was set to 650 nm as in Comparative Example 1. The center wavelength of the acoustic wave that would propagate Al2O3 would be approximately 5,552 nm, and the thickness of the low-acoustic-impedance layer was set to 1,388 nm. Al2O3, which is an insulating material in general and has a resistivity of 10{circumflex over ( )}6 Ωcm or higher, would not cause heat conduction by carriers. Here, the heat conductivity of the high-acoustic-impedance layer was 5.06×10 (W/mK), and the heat conductivity of the low-acoustic-impedance layer was 2.81 (W/mk), which was a bit high, when compared with SiO2. The heat resistance of the high-acoustic-impedance layer was 1.28×10{circumflex over ( )}−8 (m2K/W) whereas the heat resistance of the low-acoustic-impedance layer was 4.94×10{circumflex over ( )}−7 (m2K/W), which was high, resulting in a high total heat resistance of 5.07×10{circumflex over ( )}−7 (m2K/W). Al2O3 would conduct heat predominantly by phonons, and had a high heat resistance. The acoustic multilayer film as a whole could not dissipate heat sufficiently in response to the 2-GHz resonant vibration, and there was a risk that the resonance property would degrade.
Based on Examples 1 to 15 and Comparative Examples 1 to 5, it can be seen that formation of the low-acoustic-impedance layer made of an electrically-conductive oxide such as ITO, IZO, AZO, or the like instead of an insulating layer such as SiO2, Al2O3, or the like leads to heat conduction by carriers, and to improvement of the heat conductivity. Electrically-conductive oxides other than ITO, IZO, and AZO, such as FTO, GZO, ATO, PTO, and the like may also be used, and a complex of one or more electrically-conductive oxides may also be used. By using an electrically-conductive oxide having a resistivity of 1.0×10{circumflex over ( )}−3 Ωcm or lower as the low-acoustic-impedance layer, it is possible to maintain the heat conductivity through the low-acoustic-impedance layer to 3 W/mK or higher and to improve the heat dissipation property of the acoustic multilayer film as a whole.
The present invention has been described above based on specific Examples. However, the present invention is not limited to the configuration examples described above. For example, the high-acoustic-impedance layer may be made of not only W, Mo, or Zno, but also Ta2O5, Ru, or Ir, or a complex of these, and the low-acoustic-impedance layer may be made of a transparent electrode material. The uppermost low-acoustic-impedance layer of the acoustic multilayer film may be made of an insulating layer such as SiO2, Al2O3, and the like. As long as heat conduction by carriers is predominantly achieved by low-acoustic-impedance layers made of an oxide conductor as a whole, some other low-acoustic-impedance layers may be made of an insulating layer in addition to the uppermost low-acoustic-impedance layer. In any case, the heat conductivity of the acoustic multilayer film as a whole is improved. When an active element such as a resonator, a piezoelectric element, or the like is connected to the acoustic multilayer film, heat generated by the active element can be efficiently dissipated to the support substrate via the acoustic multilayer film. In the laminate of the embodiment, the low-acoustic-impedance layers can diffuse heat by carriers, and a high heat dissipation property is realized without the need for a complicated processing. The device operation reliability of a high-frequency filter device using the laminate is improved because property degradation of the acoustic multilayer film due to heat generated by the active element is inhibited.
The present application claims priority to Japanese Patent Application No. 2022-058815 filed with the Japan Patent Office on Mar. 31, 2022, the entire contents of which are incorporated herein by reference.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2022-058815 | Mar 2022 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2023/012773 | 3/29/2023 | WO |
