Claims
- 1. An image array having at least one photosite transistor, at least one column sense line and at least one column clamp transistor, wherein:
- a source of said photosite transistor is coupled to said column sense line;
- a source of said column clamp transistor is coupled to said photosite source;
- a drain of said column clamp transistor is coupled to a drain of said photosite transistor;
- a clocked voltage is applied to a gate of said column clamp transistor; and
- a variable current is coupled to said column sense line, the variable current is decreased when the clocked voltage is increased.
Parent Case Info
This is a Divisional of application Ser. No. 07/969,668, filed Oct. 30, 1992, issued as U.S. Pat. No. 5,335,015 on Aug. 2, 1994.
US Referenced Citations (5)
Non-Patent Literature Citations (2)
Entry |
A Bulk Charge Modulated Device (BCMD) Image Sensor, Neal Cooper, et al., Image Technology, TI Technical Journal, Sep.-Oct. 1991, pp. 14-19. |
BCMD-An Improved Photosite Structure for High-Density Image Sensors, IEEE Transactions on Electron Devices, vol. 38, No. 5, May 1991, Jaroslav Hynecek, pp. 1011-1020. |
Divisions (1)
|
Number |
Date |
Country |
Parent |
969668 |
Oct 1992 |
|