NSF Award
9461613
SI Diamond Technology, Inc., proposes to develop a novel buried layer interconnect technology, based on the integration of the group V Sb with the III-V semiconductor family. The remarkable compatibility of Sb with the III-V semiconductors in a heterostructure is a consequence of the nearly identical atomic surface nets in the (111) planes of each crystal. The technology will provide the first true capability to produce ultra low resistance buried interconnects, combined with undegraded semiconductor overgrowth capability, therefore providing a technology for three-dimensional circuit architectures and new generation devices such as high speed metal based transistors. An interconnect capability, based on elementary GaSb/Sb/GaSb multilayers will be demonstrated in Phase I. Devices, including a metal-based transistor will be produced in Phase II.
