This application claims priority from Korean Patent Application No. 10-2014-0089897, filed on Jul. 16, 2014, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety.
1. Field
Exemplary embodiments relate to capacitive micromachined ultrasonic transducer modules in which a capacitive micromachined ultrasonic transducer chip and a flexible printed circuit are bonded by wire bonding.
2. Description of the Related Art
A capacitive micromachined ultrasonic transducer (CMUT) is a transducer that converts an electrical signal to an ultrasonic signal or vice versa.
In order to fabricate an ultrasonic probe, a CMUT is bonded to an electrical circuit. The bonding method may include wire bonding and flip chip bonding. When a flip chip bonding method is used to connect a CMUT to a flexible printed circuit (FPC), the bonding method is complicated, and manufacturing costs may be relatively high as a result. In addition, an alignment error between the CMUT and the FPC may occur, and this alignment error may not be readily detected in the bonding method.
When a wire bonding method is used, an area required for wire bonding may be increased, and accordingly, an effective area of the CMUT may be decreased in an ultrasonic probe. As a result, measuring quality may be decreased.
Provided are capacitive micromachined ultrasonic transducer modules having a CMUT chip with an increased effective area by wire bonding a flexible printed circuit (FPC) to an electrode pad of the CMUT chip through a hole in the FPC.
Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the presented exemplary embodiments.
According to an aspect of one or more exemplary embodiments, a micromachined ultrasonic transducer (CMUT) module includes: a CMUT chip which includes a plurality of first electrode pads which are disposed on a first surface thereof; a flexible printed circuit (FPC) which is disposed on the first surface of the CMUT chip, the FPC including a plurality of first holes which are configured to expose the plurality of first electrode pads; a plurality of second electrode pads which are formed on the FPC and which correspond to respective ones of the plurality of first electrode pads; and a plurality of wires which connect each respective one of the plurality of first electrode pads to the corresponding one of the plurality of second electrode pads.
The CMUT chip may include a plurality of channels disposed in a first direction, each channel may include at least two first electrode pads that are separated by a predetermined distance in a second direction which is perpendicular to the first direction, and the first electrode pads of adjacent channels are separated by a predetermined gap in the second direction.
The CMUT module may further include a plurality of lead wires that are respectively connected to second electrode pads on both facing sides of the FPC, wherein the lead wires are substantially parallel to each other.
The CMUT module may further include a plurality of connection wires which respectively connect the at least two first electrode pads of each respective one of the plurality of channels in the second direction, wherein each respective one of the plurality of channels includes one second electrode pad which is connected to the corresponding one of the plurality of connection wires.
A first number of lead wires may be substantially equal to a second number of connection wires.
The first hole may be a slit that crosses at least one adjacent channel in the first direction.
The CMUT chip has a first area, and a main body of the FPC has a second area, and the first area may be substantially equal to the second area.
An area of each respective one of the plurality of first electrode pads may be greater than an area of each corresponding one of the plurality of second electrode pads.
Each of the plurality of first holes may have a respective length in a range from about 0.2 millimeters to about 1.0 millimeters.
These and/or other aspects will become apparent and more readily appreciated from the following description of exemplary embodiments, taken in conjunction with the accompanying drawings in which:
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. In the drawings, the thicknesses of layers and regions are exaggerated for clarity. The present inventive concept may, however, be embodied in many different forms and should not construed as limited to the exemplary embodiments set forth herein. It will also be understood that when an element is referred to as being “above” or “on” another element, it can be directly on the other element or intervening layers may also be present. Like reference numerals in the drawings denote like elements throughout the specification, and thus their description will be omitted.
Referring to
Referring to
The TSV substrate 210 may be formed of silicon and may include a plurality of through holes 212 therein. The CMUT chip 110 may include a plurality of elements E. The through holes 212 may correspond to the elements E. An insulation layer (not shown) may be formed on an inner surface of the through holes 212 and a surface of the TSV substrate 210. A via metal 214 is filled in each of the through holes 212.
The device substrate 240 is formed of a conductive material and may have a thickness of a few tens of micrometers (μm), such as, for example, in a range from about 10 μm to about 50 μm. The device substrate 240 may be formed of low resistance silicon that is highly doped with an impurity. The device substrate 240 may be used as a lower electrode.
The device substrate 240 may include an insulation layer 242, a supporting unit 250 that forms cavities C, and a membrane 260 disposed on the supporting unit 250 so as to cover the cavities C. An upper electrode 270 may be formed on the membrane 260. The membrane 260 may be formed of silicon. The supporting unit 250 may be formed of an insulation material. The supporting unit 250 may include oxide or nitride. The supporting unit 250 may be formed of, for example, silicon oxide.
In
The upper electrode 270 may be formed of any one or more of gold (Au), copper (Cu), tin (Sn), silver (Ag), aluminum (Al), platinum (Pt), titanium (Ti), nickel (Ni), chromium (Cr), or a mixture of these materials.
The insulation layer 242 may include oxide or nitride. The insulation layer 242 may be formed of, for example, silicon nitride.
In
Bonding pads 220 are formed on a lower surface of the device substrate 240 and connected to via metals 214. The bonding pads 220 may be formed of a eutectic bonding metal, for example, an Au—Sn eutectic material.
First electrode pads 216 are formed on a lower surface of the TSV substrate 210 and connected to the via metals 214. A driving voltage may be applied to the first electrode pads 216. A ground voltage may be applied to the upper electrode 270.
Referring to
Referring to
The 80 channels may be sequentially formed in a first direction (i.e., in
As depicted in
At least another electrode pad (not shown) may be separately formed from the first electrode pads 120 to apply a ground voltage to the upper electrode (114 in
Referring to
The FPC 150 may include a main body 151 and a lead unit 152 in which the lead wires 154 are included. When a CMUT probe is fabricated, the main body 151 of the FPC 150 is combined with the CMUT chip 110 when the lead unit 152 is backwardly bent. Accordingly, the CMUT chip 110 and the main body 151 of the FPC 150 may have substantially the same area, and thus, an effective area of the CMUT chip 110 may be maximized.
Referring to
In the CMUT module 100, the first holes H1 are formed in the FPC 150, and the second electrode pads 160 may be wire-bonded to the first electrode pads 120 of the CMUT chip 110 through the first holes H1. The wire bonding allows for easy fabrication of the CMUT module 100. Since the first electrode pads 120 are formed relatively larger than the second electrode pads 160, even though an alignment error may occur between the CMUT chip 110 and the FPC 150, the wire bonding may be readily achieved. In addition, an alignment error may be readily detected through the first holes H1.
Further, since the CMUT chip 110 may be formed on a substantially same area of the main body 151 of the FPC 150, an effective area of the CMUT chip 110 may be increased in an ultrasonic probe, and accordingly, the measuring quality of the CMUT module 100 may be increased.
Referring to
Referring to
In the FPC 150, the first holes H1 may be formed adjacent to the first electrode pads 120. The slits S1 in
The number of lead wires 154 that connect the first electrode pads 120 is reduced by half, and accordingly, the design of the lead wires 154 may be easier. Accordingly, the number of lead wires 154 may be substantially equal to the number of connection wires 320.
However, the current exemplary embodiment is not limited thereto. For example, in the structure of
In the CMUT module that uses wire bonding according to one or more exemplary embodiments, the first holes H1 are formed in the FPC, and wire bonding between the first electrode pads 120 of the CMUT chip 110 and the second electrode pads on the FPC is performed through the first holes H1. The wire bonding enables easy fabrication of the CMUT module. In addition, since the first electrode pads are formed relatively larger than the second electrode pads 160, even if an alignment error between the CMUT chip and the FPC occurs, the wire bonding may be easily performed. Further, the alignment error may be readily detected through the first holes H1.
Still further, since the CMUT chip may be formed on substantially the same area as the main body 151 of the FPC 150, an effective area of the CMUT chip in the CMUT module may be increased, and thus, the measuring quality of the CMUT module may be increased.
While exemplary embodiments have been described with reference to the figures, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present inventive concept, as defined by the following claims.
Number | Date | Country | Kind |
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10-2014-0089897 | Jul 2014 | KR | national |
Number | Name | Date | Kind |
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8483014 | Huang | Jul 2013 | B2 |
20080269614 | Adachi | Oct 2008 | A1 |
20160016197 | Shim | Jan 2016 | A1 |
20160020709 | Shim | Jan 2016 | A1 |
20160045935 | Yoon | Feb 2016 | A1 |
20160051226 | Hong | Feb 2016 | A1 |
Number | Date | Country |
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3776519 | May 2006 | JP |
4961224 | Jun 2012 | JP |
10-2011-0066304 | Jun 2011 | KR |
10-2014-0003720 | Jan 2014 | KR |
Number | Date | Country | |
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20160016197 A1 | Jan 2016 | US |