Capacitive pressure sensing with moving dielectric

Information

  • Patent Grant
  • 6505516
  • Patent Number
    6,505,516
  • Date Filed
    Thursday, January 6, 2000
    24 years ago
  • Date Issued
    Tuesday, January 14, 2003
    21 years ago
Abstract
A pressure sensor with a diaphragm that has a dielectric portion that moves in a cavity near capacitor plates that are fixed relative to a mounting frame. The diaphragm is supported on the frame and the frame surrounds the cavity. The diaphragm has an outer surface that receives pressure and has an inner surface facing the cavity. The capacitor plates, which are fixed, sense movement of the nearby dielectric portion and generate an electrical output representative of pressure. Creep of metallizations on a flexible diaphragm are avoided. Manufacture is simplified because metallization of the diaphragm is avoided.
Description




BACKGROUND OF THE INVENTION




Capacitive pressure sensors are used in demanding applications such as industrial transmitters and aerospace probes. Sensor bodies are formed from stacked layers of low hysteresis dielectric material such as sapphire, silicon or ceramic. At least one layer in the stack includes a thinned diaphragm region that is deflected by the pressure. A metal capacitor plate is deposited on the diaphragm region and an opposite support plate to form a capacitor. The metal capacitor plate on the diaphragm can cause problems because the metal creeps when the diaphragm deflects, leading to hysteresis errors in the measured pressure Deposition of the capacitor plate on the diaphragm and a lead to the capacitor plate are manufacturing processes that can be costly to implement and control in mass production.




The problem with hysteresis errors due to the presence of metal on the deflecting low hysteresis diaphragm material becomes increasingly important as other sources of pressure sensor error are corrected through use of improved diaphragm materials, improved bonding such as direct bonding and improved stress isolation in mounting sensors and electrical leads. A technology is needed that avoids the problems with depositing metal on diaphragms and the creep or hysteresis in metals on deflecting diaphragms in pressure sensors in demanding applications.




SUMMARY OF THE INVENTION




A pressure sensor includes a diaphragm that has a dielectric portion that moves in a cavity near capacitor plates that are fixed relative to a mounting frame.




The diaphragm is supported on the frame and the frame surrounds the cavity. The diaphragm has an outer surface that receives pressure and has an inner surface facing the cavity. The inner surface carries a dielectric portion that is movable relative to the frame by the pressure.




The capacitor plates are not on the deflecting diaphragm, but are both fixed. The capacitor plates sense movement of the nearby dielectric portion of the deflecting diaphragm and generate an electrical output representative of pressure.











BRIEF DESCRIPTION OF THE DRAWINGS





FIG. 1

shows an environment for a pressure transmitter;





FIG. 2

shows an embodiment of a pressure transmitter;





FIGS. 3-7

shows various views of an embodiment of a capacitive pressure sensor with a moving dielectric;





FIG. 8

shows a method of manufacturing a capacitive pressure sensor with a moving dielectric;





FIG. 9

shows a partial cross-sectional view of a pressure transmitter with capacitive sensors with moving dielectrics;





FIG. 10

shows a capacitive pressure sensor with moving dielectric arranged in an isolator assembly;





FIGS. 11-13

show arrangements of capacitor plates and moving dielectrics in a capacitive pressure sensor;





FIG. 14

show a capacitive pressure sensor with moving dielectric and a shielding arrangement;





FIGS. 15-16

show an interdigitated electrode arrangement for a capacitive sensor with a moving dielectric;





FIGS. 17-18

show a shielding arrangement for interdigitated electrodes; and





FIG. 19

shows geometric arrangements of capacitor plates; and





FIG. 20

shows an environment for an aerospace probe.











DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS




In

FIG. 1

, a typical environment for an industrial pressure sensor is illustrated at


20


. Process variable transmitters such as flow meter


22


in process fluid line


23


, pressure transmitters


24


,


26


,


36


near tank


28


and integral orifice flow meter


30


in process line


31


are shown electrically connected to control system


32


. Control system


32


controls current to pressure transducer


38


which controls control valve


40


.




Process variable transmitters can be configured to monitor one or more process variables associated with process plant fluids such as slurries, liquids, vapors and gasses in chemical, pulp, petroleum, gas, pharmaceutical, food and other fluid processing plants. The monitored process variables can be pressure, temperature, flow, level, pH, conductivity, turbidity, density, concentration, chemical composition or other properties of fluids. A process variable transmitter includes one or more sensors that can be either internal to the transmitter or external to the transmitter, depending on the installation needs of the process plant.




Process variable transmitters generate one or more transmitter outputs that represent the sensed process variable. Transmitter outputs are configured for transmission over long distances to a controller


32


or indicator via communication busses


34


. In typical fluid processing plants, a communication buss


34


can be a 4-20 mA current loop that powers the transmitter, or a fieldbus connection, a HART protocol communication or a fiber optic connection to a controller, a control system or a readout. In transmitters powered by a 2 wire loop, power is kept. low to provide intrinsic safety in explosive atmospheres.





FIG. 2

shows an exploded view of an example of a pressure transmitter


50


. Transmitter


50


includes a flange


52


for receiving a differential pressure and a sensor module


54


that has two absolute pressure. sensors (not shown). The sensor module


54


couples to a housing


55


having electronic transmitter circuits


56


. Transmitter


50


is bolted to flange adapter


58


. Flange adapter


58


connects to impulse pipes connected to flange adapter unions


60


or other connection hardware. Each absolute pressure sensor in sensor module


54


can includes a moving dielectric portion as explained below.




In

FIGS. 3

,


4


and


5


, a perspective view, an exploded view and a cross sectional view of a pressure sensor


100


are shown. Pressure sensor


100


has a body made of two layers


102


,


104


of material with low mechanical hysteresis. Layers


102


,


104


are preferably sapphire, however, silicon, ceramic or glass can also be used for less demanding applications. Layer


102


is bonded to layer


104


at an outer rim or frame


106


that surrounds a cavity


108


. The frame


106


includes a first frame portion


110


on layer


102


and a second frame portion


112


on layer


104


. Alternatively, frame


106


can be formed on only one of the layers, or the sensor


100


can be made of three layers, with the middle layer providing the frame.




Layer


104


includes a thinned region or diaphragm


114


that is supported around its peripheral edge on the frame


106


. Diaphragm


114


has an outer surface


116


receiving pressure and has an inner surface


118


facing the cavity


108


.




A dielectric portion


120


is carried on the inner surface


118


. The dielectric portion


120


moves with the diaphragm


114


relative to the frame


106


when the pressure deflects the diaphragm


114


.




Capacitor plates


122


,


124


are fixed relative to the frame


106


on a surface of layer


104


in the cavity


108


near the movable dielectric portion


120


. The capacitor plates


122


,


124


sense movement of the nearby dielectric portion


120


and generate an electrical output representative of pressure. The electrical output is a capacitance that varies as a function of pressure. First capacitor plate


122


is separated from second capacitor plate


124


by a space


126


in the cavity


108


. The movable dielectric portion


120


moves through the space


126


to vary the electrical output.




In the arrangement shown in

FIGS. 3-5

, the space


126


in the cavity


108


does not intersect with a straight line


128


between the first and second capacitor plates


122


,


124


. It is found that there is enough electric field fringing out near the edges of the capacitor plates to sense movement of dielectric material near the electrodes, even though the dielectric is not moved through a straight line path between the capacitor plates. Alternatively, the space in the cavity


108


can intersects with a straight line between the first and second capacitor plates when the capacitor plates rise above the mounting surface and the dielectric portion travels directly between the plates, as explained below in connection with FIG.


12


.




In

FIGS. 3-5

, the movable dielectric portion


120


and the diaphragm


114


are free from conductor metallizations. There is thus no problem with hysteresis or creeping of metal when the diaphragm deflects or bends with changing pressure. Preferably, the movable dielectric portion


120


is an integral part of the diaphragm


114


, thus avoiding creep that might otherwise occur if there were bonding materials between the dielectric portion


120


and the diaphragm


114


. The capacitor plates


122


,


124


are fixed on a thicker support surface that does not deflect significantly.




The pressure sensor


100


is preferably direct bonded, evacuated and sealed so that there is a high quality vacuum in the cavity


108


. A seal


127


is applied over a feedthrough notch


128


for the leads, and the seal


127


maintains the high vacuum. The seal


127


is preferably formed from a glass frit, for example, a mixture of finely divided glass dust and ethyl cellulose. After the glass frit is placed over the feedthrough notch, the glass frit is heated to drive off the ethyl cellulose and melt to the glass dust to form a glass seal. Alternatively, each lead can be brought out through a separate feedthrough notch and each notch can be sealed with a conductive solder or brazed seal.




The frame


106


is elongated and has a first end


130


including the pressurized diaphragm and a second end


132


opposite the first end that is isolated from the pressurization and includes electrical connections


134


for the capacitor plates


122


,


124


.




A mesa


136


provides increase support in a mounting area between the first and second ends


130


,


132


. The mounting area of the sensor


100


provides a place for a sealed barrier between the process fluid and the electrical connections as shown in

FIGS. 9-10

.




The pressure sensor


100


shown in

FIGS. 3-5

can be seen as a beam


138


or elongated frame formed around a central channel or cavity


108


. The pressure sensor has a support surface


140


in the central channel. The beam includes a diaphragm


114


that has an outer diaphragm surface


116


receiving pressure and has an inner diaphragm surface


118


,


120


formed of dielectric. The inner diaphragm surface


120


is spaced away from the support surface


140


in the central channel. The dielectric


120


is movable relative to the support surface


140


by the pressure. Capacitor plates


122


,


124


are fixed on the support surface


118


near the movable dielectric


120


. The capacitor plates


122


,


124


sense movement of the nearby dielectric


120


and provide an electrical output representing pressure on leads


134


.





FIGS. 6-7

shown enlarged views of the layers


102


,


104


and uses the same reference numbers as used in

FIGS. 3-5

. As shown in

FIG. 6

, the sensor


100


can also include a temperature sensor element


135


that can be connected to transmitter circuitry to provide improved temperature compensation. The temperature element


135


can be a thin film platinum resistance thermometer (PRT) as shown or a capacitance or other known type of temperature sensor can be used. As shown in

FIG. 7

, the layer


104


includes a diaphragm


114


that is free of metallizations. When diaphragm


114


deflects, there is no error due to creep of diaphragm metallizations.




The sensor


100


is manufactured by a preferred method illustrated by schematic sectional views in FIG.


8


. First, layers


102


,


104


are shaped to form the components of a beam as shown at


138


. Shaping is typically done by use of selective chemical etching of flat layers using masking techniques common to microstructure fabrication processes. Mating surfaces


152


,


154


are finished to be optically flat for direct bonding. Next, sensing films


122


,


124


are deposited on layer


102


as shown at


156


. Then, the shaped layers


102


,


104


are stacked in direct contact with one another to form the beam


138


having capacitor plates


122


,


124


on a support surface


140


with a space


126


between them and a dielectric portion


120


deflectable in the space


126


near the capacitor plates as shown at


158


. The beam


138


is then heated while the layers are in direct contact with one another at optically flat faces that are extremely clean. No bonding materials are needed with direct bonding, and in some cases the bond will be adequate without heating.




The channel is sealed by forming a glass frit seal


127


in the gap around the leads as shown at


160


. The channel is preferably sealed with a vacuum in it to make the sensor an absolute pressure sensor.




In

FIG. 9

, a pressure sensing module


180


is shown which corresponds to module


54


shown in FIG.


2


. Assembly


180


includes two sensors


182


,


184


as shown in

FIGS. 3-7

. In

FIG. 9

, an isolation cup


198


has an opening


200


sealed to an outer surface of the beam between the blind end and the opposite, isolated end. The sensors


182


,


184


are wired to a circuit card


203


which in turn is wired through a sealed feedthrough


201


to a second circuit card


202


.




In

FIG. 10

, a sensing module


210


is shown that includes an isolator diaphragm


212


with a rim


214


sealed to an isolator cup


216


. Isolator diaphragm


212


separates process fluid


218


from isolator fluid


220


that is sealed in the space enclosed by the isolator cup


216


and the isolator diaphragm


212


. Sensor


222


is constructed as shown in

FIGS. 3-7

and is sealed to an opening


224


in the isolator cup


216


. The isolator diaphragm


212


and isolator fluid


220


couple pressure to the sensor


222


while isolating the sensor from the process fluid


218


. Isolator cup


216


has sensor


222


passing through sealed opening


224


and isolates electrical connections


226


on the sensor


222


from both the pressurized process fluid


218


and the pressurized isolator fluid


220


. The isolator cup can include a back plate


228


which has a temperature coefficient of expansion closely matched to the temperature coefficient of expansion of the sensor


222


. A block of material


230


can be pressed in the isolator cup


216


and material


230


has a temperature coefficient of expansion which partially compensates for the temperature coefficient of expansion of the isolator fluid


220


to limit undesired movement of isolator diaphragm


212


due to temperature changes. A small gap filled with isolator fluid


220


is provided between block


230


and sensor


222


.




In

FIGS. 11-13

, alternative embodiments of the fixed capacitor plates and moving dielectric are shown. In

FIG. 11

a flat dielectric portion


250


, which is a diaphragm, moves in a space


252


that is not directly between capacitor plates


254


,


256


, but slightly above the capacitor plates in a region of fringing electrical field from the capacitor plates.




In

FIG. 12

, a dielectric portion


258


moves in a space


260


that is on a direct line between capacitor plates


262


,


264


.




In

FIG. 13

, a dielectric portion


280


moves in a space


282


that is not on a direct line between capacitor plates


284


,


286


.




In

FIG. 14

, capacitor plates


266


,


268


are shielded from stray coupling through a support plate


270


by shield or screen electrodes


272


,


274


. Screen electrodes


272


,


274


are driven by unity gain buffers at


276


,


278


.




In

FIGS. 15-16

, an embodiment with moving dielectric


290


and interdigitated fixed capacitor plates


292


,


294


on support surface


296


is shown. The interdigitated arrangement for the capacitor plates provides a higher capacitance in a more compact space near a diaphragm. The term interdigitated, as used in this application, means that the capacitor plates are not simple rectangular or round plates, but have a complex geometry which provides a lengthy gap between plates in a small surface area. Interdigitated capacitor plates can include arrangements like those shown where there are alternating multiple fingers on each plate and also include serpentine plates that are zig-zagged next to each other to provide a lengthy gap in a small space. Combinations of fingers and serpentine paths are also contemplated.




In

FIGS. 17-18

, an embodiment with moving dielectric


300


, interdigitated fixed capacitor plates


302


,


304


on support plate


306


and electric shield conductors


308


,


310


driven by unity gain buffers


312


,


314


are shown. This arrangement provides high capacitance in a compact space for a pressure sensor with improved gauge factor (ΔC/C


0


) due to reduced effective stray capacitance. The ratio of ΔC, the change of capacitance from minimum to full scale pressure, divided by C


0


, the rest capacitance, is higher because C


0


is smaller due to the electric shield conductors


308


,


310


being actively driven by the buffers


312


,


314


. The shield conductors


308


,


310


are dynamically maintained at substantially the same potential as an adjacent capacitor plate by the buffers.




Shields or screen electrodes that are grounded can also be provided in regions peripheral to capacitor plates to reduce coupling of noise to the capacitor plates.





FIG. 19

shows a dimensional arrangement of capacitor plates and an interposed dielectric. The capacitance of spaced apart electrodes, as a function of the displacement (t) of the dielectric diaphragm and neglecting parasitic effects is given by the following equation:











C


(
t
)


=



,
0



W


[



(

T
-
t

)


(

s
+
d

)


+


(
tK
)


(

s
+
Kd

)



]






Eq
.




1













where:




,


0


=permittivity of free space;




W=the length of opposed facing surfaces of electrodes


22


A and


22


B;




T=the height of electrodes


22


A and


22


B;




t=the portion of the height of protrusion


38


that is along straight lines of height between the electrodes


22


A and


22


B;




K=the relative permittivity of the material forming the dielectric protrusion


38


;




S=the width of the protrusion


38


extending between the electrodes


22


A and


22


B;




d=the width calculated by subtracting the width S from the width indicated by arrow


51


between facing surfaces of the electrodes


22


A and


22


B.




The span of the capacitance between the electrodes, also called capacitor plates, is:






Δ


C=C


(


t


)−


C


(0)  Eq. 2






Combining Eq. 1 and Eq. 2,










ΔC
=



,
0



W






t


[


K

(

s
+

K





d


)


-

1

(

s
+
d

)



]







Eq
.




3













The arrangement has many advantages over conventional moving plate capacitive sensors. The moving dielectric arrangement can have gain factors of 5 or more compared to the conventional arrangement. Less deflection is needed for a comparable change in capacitance. Also, a material with a higher dielectric constant can be used for the moving dielectric portion and a material with a lower dielectric constant can be used to support the capacitor plates to reduce stray capacitance. The relationship between pressure and capacitance change is more linear with the moving dielectric, reducing needs for electronic compensation or linearization. The arrangement provides inherent overpressure protection and there is no danger of the capacitor plates shorting out under overpressure condition, or going to an extremely high capacitance value during overpressure condition. Fabrication is simple because plating of capacitor plates need only be done on one layer, leaving the diaphragm free of metallizations.





FIG. 20

shows a pressure sensor arrangement


62


for a turbine engine arrangement


64


. The turbine engine includes turbine engine blades such as blade


66


rotating in a turbine engine housing


68


. A hole


70


is provided in the turbine engine housing


68


for sensing pressure in the turbine engine. Pressure sensor arrangement


62


is spaced apart from the turbine housing


68


by a pedestal


72


. Pedestal


72


spaces pressure sensor arrangement


62


away from the turbine housing to provide a lower temperature environment for pressure sensor arrangement


62


. A passageway


74


through pedestal


72


couples the pressurized. gasses inside the turbine housing to the pressure sensing arrangement


62


. A pressure sensor


74


is included in pressure sensing arrangement


62


. Pressure sensor


74


includes a moving dielectric. Pressure sensor


74


also includes isolated sensor leads


78


that pass through a sealed gap


80


in the beam and connect to electronic conversion circuits (not shown) by leads


82


.




Although the present invention has been described with reference to preferred embodiments, workers skilled in the art will recognize that changes may be made in form and detail without departing from the spirit and scope of the invention.



Claims
  • 1. A pressure sensor, comprising:a frame surrounding a cavity; a diaphragm supported on the frame and having an outer surface receiving pressure and having an inner surface facing the cavity; a dielectric portion carried on the inner surface, the dielectric portion being movable relative to the frame by the pressure; and capacitor plates fixed relative to the frame in the cavity near the movable dielectric portion, the capacitor plates sensing movement of the nearby dielectric portion and generating an electrical output representative of pressure.
  • 2. The pressure sensor of claim 1 wherein the capacitor plates include a first capacitor plate separated from a second capacitor plate by a space in the cavity, the movable dielectric portion being movable through the space to vary the electrical output.
  • 3. The pressure sensor of claim 2 wherein the space in the cavity intersects with a straight line between the first and second capacitor plates.
  • 4. The pressure sensor of claim 2 wherein the space in the cavity does not intersect with a straight line between the first and second capacitor plates.
  • 5. The pressure sensor of claim 1 wherein the movable dielectric is free of conductors.
  • 6. The pressure sensor of claim 1 wherein the cavity is evacuated and sealed.
  • 7. The pressure sensor of claim 1 wherein the frame is elongated and has a first end including the diaphragm and a second end opposite the first end that is isolated from the pressurization and includes electrical connections for the capacitor plates.
  • 8. The pressure sensor of claim 1 wherein the capacitor plates are interdigitated.
  • 9. The pressure sensor of claim 8 further comprising a support plate upon which the capacitor plates are disposed and comprising screen electrodes disposed on the support plate.
  • 10. The pressure sensor of claim 9 further comprising unity gain buffers coupled to the screen electrodes.
  • 11. A pressure sensor, comprising:a beam formed around a central channel and having a support surface in the central channel, the beam including a diaphragm having an outer diaphragm surface receiving pressure and having an inner diaphragm surface formed of dielectric and spaced away from the support surface in the central channel, the dielectric being movable relative to the support surface by the pressure; and capacitor plates fixed on the support surface near the movable dielectric, the capacitor plates sensing movement of the nearby dielectric and providing an electrical output representing pressure.
  • 12. The pressure sensor of claim 11 wherein the capacitor plates include a first capacitor plate separated from a second capacitor plate by a space in the central channel, the movable dielectric portion being movable through the space to vary the electrical output.
  • 13. The pressure sensor of claim 11 wherein the space in the central channel intersects with a straight line between the first and second capacitor plates.
  • 14. The pressure sensor of claim 11 wherein the space in the central channel does not intersect with a straight line between the first and second capacitor plates.
  • 15. The pressure sensor of claim 11 wherein the movable dielectric is free of conductors.
  • 16. The pressure sensor of claim 11 wherein the central channel is evacuated and sealed.
  • 17. The pressure sensor of claim 11 wherein the frame is elongated and has a first end including the diaphragm and a second end opposite the first end that is isolated from the pressurization and includes. electrical connections for the capacitor plates.
  • 18. The pressure sensor of claim 11 wherein the capacitor plates are interdigitated.
  • 19. The pressure sensor of claim 18 further comprising screen electrodes disposed on the support surface.
  • 20. The pressure sensor of claim 19 further comprising unity gain buffers coupled to the screen electrodes.
  • 21. A pressure sensor, comprising:a frame surrounding a cavity; a diaphragm supported on the frame and having an outer surface receiving pressure and having an inner surface facing the cavity; a dielectric portion carried on the inner surface, the dielectric portion being movable relative to the frame by the pressure; and means for sensing movement of the dielectric portion including capacitor plates fixed relative to the frame in the cavity near the movable dielectric portion, the capacitor plates generating an electrical output representative of pressure.
  • 22. A pressure sensor, comprising:a beam formed around a central channel and having a support surface in the central channel, the beam including a diaphragm having an outer diaphragm surface receiving pressure and having an inner diaphragm surface formed of dielectric and spaced away from the support surface in the central channel, the dielectric being movable relative to the support surface by the pressure; and means for sensing movement of the dielectric including capacitor plates fixed on the support surface near the movable dielectric, the capacitor plates providing an electrical output representing pressure.
CROSS REFERENCE TO CO-PENDING APPLICATIONS

This application is related to co-pending application Ser. No. 09/478,383 filed Jan. 6, 2000 entitled METHOD AND APPARATUS FOR A DIRECT BONDED ISOLATED PRESSURE SENSOR, and co-pending application Ser. No. 09/477,689 filed Jan. 6, 2000 entitled PRESSURE SENSOR CAPSULE WITH IMPROVED ISOLATION.

US Referenced Citations (169)
Number Name Date Kind
3079576 Kooiman Feb 1963 A
3147085 Gatti Sep 1964 A
3239827 Werner et al. Mar 1966 A
3356963 Buck Dec 1967 A
3387226 Haisma et al. Jun 1968 A
3405559 Moffatt Oct 1968 A
3477036 Haisma Nov 1969 A
3589965 Wallis et al. Jun 1971 A
3645137 Hazen Feb 1972 A
3696985 Herring et al. Oct 1972 A
3743552 Fa Jul 1973 A
3744120 Burgess et al. Jul 1973 A
3750476 Brown Aug 1973 A
3766634 Babcock et al. Oct 1973 A
3834604 Fendley et al. Sep 1974 A
3854892 Burgess et al. Dec 1974 A
3858097 Polye Dec 1974 A
3899878 Compton et al. Aug 1975 A
3939559 Fendley et al. Feb 1976 A
RE28798 Herring et al. May 1976 E
3962921 Lips Jun 1976 A
3994430 Cusano et al. Nov 1976 A
4018374 Lee et al. Apr 1977 A
4064549 Cretzler Dec 1977 A
4078711 Bell et al. Mar 1978 A
4084438 Lee et al. Apr 1978 A
4088799 Kurtin May 1978 A
4127840 House Nov 1978 A
4128006 Grabow Dec 1978 A
4158217 Bell Jun 1979 A
4177496 Bell et al. Dec 1979 A
4196632 Sikorra Apr 1980 A
4202217 Kurtz et al. May 1980 A
4208782 Kurtz et al. Jun 1980 A
4216404 Kurtz et al. Aug 1980 A
4222277 Kurtz et al. Sep 1980 A
4236137 Kurtz et al. Nov 1980 A
4257274 Shimada et al. Mar 1981 A
4274125 Vogel Jun 1981 A
4276533 Tominaga et al. Jun 1981 A
4278195 Singh Jul 1981 A
4287501 Tominaga et al. Sep 1981 A
4301492 Paquin et al. Nov 1981 A
4359498 Mallon et al. Nov 1982 A
4366716 Yoshida Jan 1983 A
4389895 Rud, Jr. Jun 1983 A
4410872 Stecher et al. Oct 1983 A
4412203 Kurtz et al. Oct 1983 A
4416156 Demark et al. Nov 1983 A
4419142 Matsukawa Dec 1983 A
4422125 Antonazzi et al. Dec 1983 A
4422335 Ohnesorge et al. Dec 1983 A
4424713 Kroninger, Jr. et al. Jan 1984 A
4426673 Bell et al. Jan 1984 A
4434665 Adolfsson et al. Mar 1984 A
4443293 Mallon et al. Apr 1984 A
4454765 Lodge Jun 1984 A
4456901 Kurtz et al. Jun 1984 A
4479070 Frische et al. Oct 1984 A
4495820 Shimada et al. Jan 1985 A
4497473 Robyn et al. Feb 1985 A
4507973 Barr et al. Apr 1985 A
4517622 Male May 1985 A
4525766 Petersen Jun 1985 A
4535219 Sliwa, Jr. Aug 1985 A
4539061 Sagiv Sep 1985 A
4542436 Carusillo Sep 1985 A
4547801 Haisma et al. Oct 1985 A
4558817 Kiendl Dec 1985 A
4572000 Kooiman Feb 1986 A
4586109 Peters et al. Apr 1986 A
4591401 Neidig et al. May 1986 A
4598996 Taniuchi Jul 1986 A
4609966 Kuisma Sep 1986 A
4625559 Carter et al. Dec 1986 A
4628403 Kuisma Dec 1986 A
4649070 Kondo et al. Mar 1987 A
4689999 Shkedi Sep 1987 A
4703658 Mrozack, Jr. et al. Nov 1987 A
4716492 Charboneau et al. Dec 1987 A
4753109 Zabler Jun 1988 A
4754365 Kazahaya Jun 1988 A
4764747 Kurtz et al. Aug 1988 A
4769882 Rosen et al. Sep 1988 A
4773972 Mikkor Sep 1988 A
4774196 Blanchard Sep 1988 A
4780572 Kondo et al. Oct 1988 A
4800758 Knecht et al. Jan 1989 A
4806783 Anderson Feb 1989 A
4810318 Haisma et al. Mar 1989 A
4849374 Chen et al. Jul 1989 A
4852408 Sanders Aug 1989 A
4857130 Curtis Aug 1989 A
4875368 Delatorre Oct 1989 A
4879903 Ramsey et al. Nov 1989 A
4883215 Goesele et al. Nov 1989 A
4901197 Albarda et al. Feb 1990 A
4908921 Chen et al. Mar 1990 A
4929893 Sato et al. May 1990 A
4954925 Bullis et al. Sep 1990 A
4971925 Alexander et al. Nov 1990 A
4972717 Southworth et al. Nov 1990 A
4980243 Malikowski et al. Dec 1990 A
4983251 Haisma et al. Jan 1991 A
4994781 Sahagen Feb 1991 A
5001934 Tuckey Mar 1991 A
5005421 Hegner et al. Apr 1991 A
5009689 Haisma et al. Apr 1991 A
5013380 Aoshima May 1991 A
5024098 Petitjean et al. Jun 1991 A
5028558 Haisma et al. Jul 1991 A
5044202 Southworth et al. Sep 1991 A
5050034 Hegner et al. Sep 1991 A
5050035 Hegner et al. Sep 1991 A
5068712 Murakami et al. Nov 1991 A
5084123 Curtis Jan 1992 A
5087124 Smith et al. Feb 1992 A
5094109 Dean et al. Mar 1992 A
5095741 Bartig et al. Mar 1992 A
5113868 Wise et al. May 1992 A
5123849 Deak et al. Jun 1992 A
5133215 Lane, III et al. Jul 1992 A
5155061 O'Connor et al. Oct 1992 A
5174926 Sahagen Dec 1992 A
5178015 Loeppert et al. Jan 1993 A
5189591 Bernot Feb 1993 A
5189916 Mizumoto et al. Mar 1993 A
5197892 Yoshizawa et al. Mar 1993 A
5201228 Kojima et al. Apr 1993 A
5201977 Aoshima Apr 1993 A
5214563 Estes May 1993 A
5214961 Kojima et al. Jun 1993 A
5227068 Runyon Jul 1993 A
5228862 Baumberger et al. Jul 1993 A
5231301 Peterson et al. Jul 1993 A
5236118 Bower et al. Aug 1993 A
5242863 Xiang-Zheng et al. Sep 1993 A
5242864 Fassberg et al. Sep 1993 A
5257542 Voss Nov 1993 A
5261999 Pinker et al. Nov 1993 A
5271277 Pandorf Dec 1993 A
5287746 Broden Feb 1994 A
5294760 Bower et al. Mar 1994 A
5314107 d'Aragona et al. May 1994 A
5315481 Smolley May 1994 A
5319324 Satoh et al. Jun 1994 A
5326726 Tsang et al. Jul 1994 A
5332469 Mastrangelo Jul 1994 A
5349492 Kimura et al. Sep 1994 A
5381300 Thomas et al. Jan 1995 A
5424650 Frick Jun 1995 A
5437189 Brown et al. Aug 1995 A
5440075 Kawakita et al. Aug 1995 A
5466630 Lur Nov 1995 A
5470797 Mastrangelo Nov 1995 A
5471884 Czarnocki et al. Dec 1995 A
5478972 Mizutani et al. Dec 1995 A
5479827 Kimura et al. Jan 1996 A
5481795 Hatakeyama et al. Jan 1996 A
5483834 Frick Jan 1996 A
5528452 Ko Jun 1996 A
5532187 Schreiber-Prillwitz et al. Jul 1996 A
5554809 Tobita et al. Sep 1996 A
5612497 Walter et al. Mar 1997 A
5637802 Frick et al. Jun 1997 A
5731522 Sittler Mar 1998 A
6106476 Corl et al. Aug 2000 A
6126889 Scott et al. Oct 2000 A
6131462 EerNisse et al. Oct 2000 A
Foreign Referenced Citations (78)
Number Date Country
827279 Sep 1979 CH
632 891 Nov 1982 CH
153132 May 1974 CS
1 648 764 Jun 1971 DE
2 021 479 Nov 1971 DE
2 221 062 Nov 1972 DE
24 59 612 Jul 1975 DE
34 04 262 Sep 1984 DE
40 11 901 Oct 1991 DE
42 44 450 Dec 1992 DE
0 024 945 Sep 1980 EP
0 136 050 Aug 1984 EP
0 161 740 Feb 1985 EP
0 166 218 May 1985 EP
0 182 032 Sep 1985 EP
0 190 508 Dec 1985 EP
0 207 272 May 1986 EP
0 213 299 Jun 1986 EP
0 210 843 Jul 1986 EP
0 256 150 Aug 1986 EP
0 351 701 Jul 1989 EP
0 355 340 Feb 1990 EP
0 383 391 Aug 1990 EP
0 430 676 Nov 1990 EP
0 410 679 Jan 1991 EP
0 413 547 Feb 1991 EP
0 444 942 Sep 1991 EP
0 444 943 Sep 1991 EP
0 451 993 Oct 1991 EP
0 456 060 Nov 1991 EP
0 460 763 Nov 1991 EP
0 473 109 Mar 1992 EP
0 476 897 Mar 1992 EP
0 526 290 Feb 1993 EP
0 547 684 Jun 1993 EP
0 556 009 Aug 1993 EP
0 579 298 Jan 1994 EP
0 928 959 Jul 1999 EP
1 568 487 May 1969 FR
2 246 506 Feb 1975 FR
2 455 733 Nov 1980 FR
1 069 435 Nov 1963 GB
1 305 885 Apr 1971 GB
2034478 Jun 1980 GB
2 071 853 Mar 1981 GB
2 168 160 Nov 1985 GB
49-38911 Apr 1974 JP
60-97676 May 1985 JP
62-70271 Mar 1987 JP
60-195546 Jul 1987 JP
62-104131 Jul 1987 JP
62-167426 Jul 1987 JP
62-259475 Nov 1987 JP
63-285195 Nov 1988 JP
63-292032 Nov 1988 JP
91-311556 Apr 1990 JP
2-148768 Jun 1990 JP
2-249936 Oct 1990 JP
3-239940 Oct 1991 JP
2852593 Mar 1993 JP
5-213975 Sep 1993 JP
5-107254 Dec 1993 JP
6-21741 Jan 1994 JP
6-265428 Sep 1994 JP
6-300650 Oct 1994 JP
2000111434 Oct 1998 JP
11006780 Dec 1999 JP
463643 Oct 1975 SU
736216 May 1980 SU
1398825 May 1988 SU
1597627 Oct 1990 SU
1629763 Feb 1991 SU
WO 8300385 Feb 1983 WO
WO 8502677 Jun 1985 WO
WO 8707947 Dec 1987 WO
WO 8707948 Dec 1987 WO
WO 9322644 Nov 1993 WO
WO 9616418 May 1996 WO
Non-Patent Literature Citations (67)
Entry
“Why Nanoparticles are so Big” for Chemical Engineering, by Charlene Crabb et al., pp. 37-41, Apr. 1999.
U.S. patent application Ser. No. 09/477,689, Sittler, filed Jan. 6, 2000, pending.
U.S. patent application Ser. No. 09/478,383, Lutz et al., filed Jan. 6, 2000, pending.
U.S. patent application Ser. No. 09/603,640, Sittler et al., filed Jan. 6, 2000, pending.
U.S. patent application Ser. No. 09/755,346, Romo et al., filed Jan. 5, 2001, pending.
“Silicon-on-Sapphire Pressure Sensor”, by C. Qinggui et al., Transducers, (1987), 4 pgs.
“Spectroscopic Study of the Surfaces of Glass Joined by Optical Contact”, by V.M. Zolotarev et al., Sov. J. Opt. Technol., (Jun. 1977), pp. 379-380.
“Effect of Scale and Time Factors on the Mechanical Strength of an Optical Contact”, by S.S. Kachkin et al., Sov. J. Opt. Technol., vol. 56, No. 2, (Feb. 1989), pp. 110-112.
“High Pressure Sensors”, Instrument Engineers Handbook vol. 1, Process Measurement, B. Liptak, Editor, pp. 244-245.
“Silicon on Sapphire: The Key Technology for High-Temperature Piezoresistive Pressure Transducers”, by H.W. Keller et al., Transducers, (1987), 4 pgs.
“Optical-Contact Bonding Strength of Glass Components”, by S.S. Kachkin et al., Sov. J. Opt. Technol., vol. 47, No. 3, (Mar. 1980), pp. 159-161.
“A Cold High-Vacuum Seal Without Gaskets”, by L. Macebo, University of California Lawrence Radiation Laboratory, (Sep. 1, 1962), pp. 1-11.
“Diffusionsschweissen Optischer Bauelemente Aus Quarzglas”, by K. Veb et al., Schweisstechnik, Berlin, (1983), pp. 262-264.
“Pressure and Temperature Measurements with Saw Sensors”, by D. Hauden et al., 36th Annual Frequency Control Symposium, (1982), pp. 284-289.
“Transient Response of Capacitive Pressure Sensors”, by P. Pons et al., Sensors and Actuators, (1992) pp. 616-621.
“Analysis and Design of a Four-Terminal Silicon Pressure Sensor at the Centre of a Diaphragm”, by M. Bao et al, Sensors and Actuators, (1987), pp. 49-56.
“A Stress and Temperature Compensated Orientation and Propagation Direction for Surface Acoustic Wave Devices”, by B. Sinha, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. UFFC-34, No. 1, (Jan. 1987), pp. 64-74.
“Nonlinear Analyses on CMOS Integrated Silicon Pressure Sensors”, by K. Suzuki et al., IEEE, (1985), pp. 137-140.
“New Techniques for Fusion Bonding and Replication for Large Glass Reflectors”, by J.R. Angel, Steward Observatory, University of Arizona, pp. 52-56.
“Pressure Sensitivity in Anisotropically Etched Thin-Diaphragm Pressure Sensors”, by S. Clark et al., IEEE Transactions on Electron Devices, vol. Ed-26, No. 12, (Dec. 1979), pp. 1887-1896.
“A Model for the Silicon Wafer Bonding Process”, by R. Stengl et al., Japanese Journal on Applied Physics, (Oct. 1989), pp. 1735-1741.
“Study of the Stressed State of a Sintered Quartz Monoblock”, by Y. Lisitsyn et al., Plenum Publishing Corporation, (1986), pp. 643-645.
“Direct Bonding in Patent Literature”, by J. Haisma, Philips J. Res., (1995), pp. 165-170.
“Special Issue on Direct Bonding”, by J. Haisma et al., Philips Journal of Research, vol. 49, No. 1/2, (1995), pp. 1-182.
“Diversity and Feasibility of Direct Bonding: A Survey of a Dedicated Optical Technology”, by J. Haisma et al., Applied Optics, vol. 33, No. 7, (Mar. 1994), pp. 1154-1169.
“Structure and Morphology of the Reaction Fronts During the Formation of MgAl2O4 Thin Films by Solid State Reaction Between R-cut Sapphire Substrates and MgO Films”, by D. Hesse et al., Interface Science, (1994) pp. 221-237.
“Development of a High Temperature Capacitive Pressure Transducer”, by R.L. Egger, NASA CR-135282 (Oct. 1977)., pp. 1-114.
“High Temperature Pressure Transducer”, Techlink Industry, Techlink No. 2359, (1978), 2 pgs.
“Quartz Capsule Pressure Transducer for the Automotive Industry”, by D.Y. Lee et al., SAE Technical Paper Series Society of Automotive Engineers, Inc., (Feb. 1981), 6 pgs.
“Low-Cost High-Sensitivity Integrated Pressure and Temperature Sensor”, by P. Pons et al., Sensors and Actuators, (1994), pp. 398-401.
“A New Type of High Performance Device for VLSI Digital System”, by X. Xiao-Li et al., Solid State Devices, (1988), pp. 579-582.
“Wafer Bonding For SOI”, by W.P. Maszara et al., Mat. Res. Soc. Symp. Proc.. vol. 107, (1988), 2 pgs.
“Silicon Fusion Bonding For Pressure Sensors”, by K. Petersen et al., IEEE, (1988), pp. 146-147.
“Silicon-To-Silicon Direct Bonding Method”, by M. Shimbo et al., Journal of Applied Physics, vol. 60, No. 8, (Oct. 1986), pp. 2987-2989.
“A Model for the Silicon Wafer Bonding Process”, by R. Stengl et al., Japanese Journal of Applied Physics, vol. 28, No. 10, (Oct. 1989), pp. 1735 & 1741.
“A Small and Stable Continuous Gas Laser”, by H. G. Van Bueren et al., Physics Letters vol. 2, No. 7, (Nov. 1962), 2 pgs.
“Direct Bonding of Ceramics and Metals by Means of a Surface Activation Method in Ultrahigh Vacumm”, by T. Suga et al., Proceedings of the MRS International Meeting on Advanced Materials, vol. 8, (Jun. 1988), pp. 257-263.
“Silicon-On-Insulator Wafer Bonding-Wafer Thinning Technological Evaluations”, by J. Haisma et al., Japanese Journal of Applied Physics, vol. 28, No. 8, (Aug. 1989), 4 pgs.
“Closure and Repropogation of Healed Cracks in Silicate Glass”, by T. Michalske et al., Journal of the American Ceramic Society, vol., 68, No. 11, (Nov. 1985), 3 pgs.
“Use of Strain Gauges with a Silicon-On-Sapphire Structure for Thermophysical Experiments”, by V.F. Kukarin et al., Plenum Publishing Corporation, (1986) pp. 1085-1087.
“Metrological Characteristics for Sapfir-22D Pressure Sensors”, by A.M. Evtyushenkov et al., Plenum Publishing Corporation, (1989), pp. 147-150.
“Low-Temperature Characteristics of the Transducer”, Rev. Sci. Instrum., vol. 56, No. 6, (Jun. 1985), pp. 1237-1238.
“The Joining of Ceramics”, by A.S. Bahrani, Int. J. for the Joining of Materials, vol. 4, No. 1 (1992), pp. 13-19.
“Chemical Free Room Temperature Wafer to Wafer Direct Bonding”, by S. Farrens et al.., J. Electrochem. Soc., vol. 142, No. 11, (Nov. 1985), pp. 3949-3955.
“Morphological Evolution of Pore Channels in Alumina”, by J. Rodel et al., Ceramic Transactions—Sintering of Advanced Ceramics, vol. 7, (May 1988), pp. 243-257.
“Le Poli Optique, Element De La Construction Des Tubes A Vide (')”, by P. Danzin et al., Annales De Radioelectricite, (Jan. 1948), pp. 281-289.
“Strength of Glass Ceramic S0115M and its Joints Based on Optical Contact”, by A.I. Busel et al, Plenum Publishing Corporation, (1983), p. 378.
“Bubble-Free Silicon Wafer Bonding in a Non-Cleanroom Environment”, by R. Stengl et al., Department of Mechanical Engineering and Materials Science, Duke University, (1988) p. L2364.
“Boundary Migration of Single Crystal in Polycrystalline Alumina”, by M. Kinoshita, Journal of the Ceramic Society of Japan, vol. 82, No. 945, (1974), pp. 295-296.
“Diffusion Bonding of Ceramics”, by C. Scott et al., American Ceramic Society Bulletin, (Aug. 1985) pp. 1129-1131.
“Creep of Sensor's Elastic Elements: Metals versus Non-metals”, K. Bethe, D. Baumgarten and J. Frank, NOVA Sensor—Silicon Sensors and Microstructure, 1990, pp. 844-849.
“High-Temperature Healing of Lithographically Introduced Cracks in Sapphire”, J. Rödel and A.M. Glaseser, J. Am. Ceram. Socl., vol. 73, No. 3, Mar. 1990, pp. 592-601.
“Fabrication of an Implantable Capacitive Type Pressure Sensor”, S. Shoji, T. Nisase, M. Esashi and T. Matsuo, Transducers '87, 1987.
“Small sensitive pressure transducer for use at low temperatures”, W. Griffioen and G. Frossati, Rev. Sci. Instrum., vol. 56, No. 6, Jun. 1985, pp. 1236-1238.
“Interface charge control of directly bonded silicon structures”, S. Bengtsson and O. Engström, J. Appl. Phys., vol. 66, No. 3, Aug. 1, 1989, pp. 1231-1239.
“Wafer bonding for silicon-on-insulator technologies”, J.B. Lasky, Appl. Phys Lett., vol. 48, No. 1, Jan. 1, 1986, pp. 78-80.
“Production of Controlled-Morphology Pore Arrays: Implications and Opportunities”, J. Rödel and A.M. Glaeser, J. Am. Ceram. Soc., vol. 70, No. 8, Aug. 1987, pp. C-172—C-175.
“Low-Temperature Preparation of Silicon/Silicon Interface by the Silicon-to-Silicon Direct Bonding Method”, by S. Bengtsson et al., J. Electrochem. Soc., vol. 137, No. 7, (Jul. 1990), pp. 2297-2303.
“Phase Formation Study in α-Al2O3 Implanted With Niobium Ions”, by L. Romana, P. Thevenard, B. Canut, G. Massouras and R. Brenier, Nuclear Instruments and Methods in Physics Research B46, published by Elsevier Science Publishers B.V. (North-Holland), pp. 94-97 (1990).
“Surface electrical properties of Ni-implanted sapphire”, by L. Shipu, F. Donghui, X. Ning, S. Zhenya and C. Xiaoming, Processing of Advanced Materials, published by Chapman & Hall, pp. 77-80 (1991).
“Silicon Microcavities Fabricated with a New Technique”, L. Tenerz and B. Hök, Electronics Letters, vol. 22, No. 11, May 22, 1986, pp. 615-616.
“A Balanced Resonant Pressure Sensor”, E. Stemme and G. Stemme, Sensors and Actuators, A21-A23, 1990, pp. 336-341.
“Silicon Sensors and Microstructure”, J. Brysek, K. Petersen, J. Mallon, Jr., L. Christel, F. Pourahmadi, NOVA Sensor, Jun. 1990, pp. 5.4-5.8, 8.21-8.23, 9.9-9.10, 9.13-9.15.
U.S. patent application Ser. No. 09/477,689, Sittler, filed Jan. 1, 2000.
U.S. patent application Ser. No. 09/478,383, Lutz et al., filed Jan. 1, 2000.
U.S. patent application Ser. No. 09/603,640, Sittler et al., filed Jan. 6, 2000.
U.S. patent application Ser. No. 09/755,346, Romo et al., filed Jan. 5, 2001.