Input devices including proximity sensor devices are widely used in a variety of electronic systems. A proximity sensor device typically includes a sensing region, often demarked by a surface, in which the proximity sensor device determines the presence, location and/or motion of one or more input objects. Proximity sensor devices may be used to provide interfaces for the electronic system. For example, proximity sensor devices are often used as input devices for larger computing systems (such as opaque touchpads integrated in, or peripheral to, notebook or desktop computers). Proximity sensor devices are also often used in smaller computing systems (such as touch screens integrated in cellular phones).
Many proximity sensing devices utilize capacitive sensing to detect, locate, and/or discriminate input objects within a sensing region of a capacitive sensing input device. Various aspects can degrade or reduce the quality and/or quantity of a capacitive resulting signal received from sensor electrode(s) that produce such a sensing region.
In a method of capacitive sensing, according to various embodiments, continuous time demodulation of a resulting signal received from a capacitive sensor is performed. The resulting signal measured is a result of a modulated signal driven for capacitive sensing. An input object interaction is detected using the resulting signal. Responsive to detection of the input object interaction, a mixing signal used in a mixer is phase-shifted.
A processing system for capacitive sensing, according to various embodiments, comprises a mixer, an operational amplifier, and a pair of current mirrors. The mixer is configured to receive a mixing signal. The operational amplifier is configured with a first input, a second input, and an output. The first input is configured to couple with a modulated signal; the output is coupled to the second input in a unity gain configuration; and the second input is configured to couple with and receive a resulting signal, in a form of an input current, from a capacitive sensor electrode. The pair of current mirrors is coupled with the operational amplifier and configured to convey an output current from the operational amplifier to the mixer. The mixer is configured to mix the output current with the mixing signal to achieve a mixed current as an output, and the processing system is configured to phase-shift the mixing signal in response to detection of an input object interaction using the resulting signal.
A capacitive sensing input device, according to various embodiments, comprises a sensor element pattern; and a processing system. The sensor element pattern comprises a plurality of capacitive sensor electrodes. The processing system, comprises: a mixer, an operational amplifier, and a pair of current mirrors. The mixer is configured to receive a mixing signal. The operational amplifier is configured with a first input, a second input, and an output. The first input is configured to couple with a modulated signal; the output is coupled to the second input in a unity gain configuration; and the second input is configured to couple with and receive a resulting signal, in a form of an input current, from a capacitive sensor electrode of the plurality of capacitive sensor electrodes. The pair of current mirrors is coupled with the operational amplifier and configured to convey an output current from the operational amplifier to the mixer. The mixer is configured to mix the output current with the mixing signal to achieve a mixed current as an output, and the processing system is configured to phase-shift the mixing signal in response to detection of an input object interaction using the resulting signal.
The accompanying drawings, which are incorporated in and form a part of the Description of Embodiments, illustrate various embodiments and, together with the Description of Embodiments, serve to explain principles discussed below, where like designations denote like elements. The drawings referred to in this Brief Description of Drawings should not be understood as being drawn to scale unless specifically noted.
The following Description of Embodiments is provided by way of example and not of limitation. Furthermore, there is no intention to be bound by any expressed or implied theory presented in the preceding Background, Summary, or Brief Description of Drawings or the following Description of Embodiments.
Various embodiments are described that provide input devices, processing systems, and methods that facilitate improved usability. In various described embodiments, the input device may be a capacitive sensing input device. Utilizing the described techniques, efficiencies may be achieved by shifting the phase of a mixing signal in an analog front-end of a processing system when the presence of an input object (such as a user's finger) is noted by the processing system to be touching or otherwise interacting with a proximity sensor device of a capacitive sensing input device to which the processing system is coupled. This phase-shift can reduce or eliminate capacitive baseline shift, which is defined as the measured capacitance changing (shifting) with the sensing frequency. As discussed, the phase-shifting of the mixing signal when an input object interaction (e.g., a touch event) is detected decreases this baseline shift by adjusting the relative phase of a mixing window such that the phase of the adjusted mixing window accounts for some or all of the delay introduced by the added capacitance of an input object when the input object touches or otherwise interacts with a proximity sensor device, such as a touch pad, touch screen, or the like. Some non-limiting other types of input object interactions besides touching include the input object hovering within a sensing region without any contact, the input object contacting an intervening material between the proximity sensor device and the input object, and the input object making some form of touch contact and undergoing biometric capacitive sensing (e.g., capacitive fingerprint sensing).
Discussion begins with a description of an example input device with which or upon which various described embodiments may be implemented. An example sensor element pattern is then described. This is followed by a description of an example processing system and some components thereof. The processing system may be utilized with or as a portion of an input device, such as a capacitive sensing input device. An example diagram of sensor input currents (IIN) versus time and mixing signal (SMIX) versus time is described, as is a diagram of some example phase responses. Operation of an input device, processing system, and components thereof are then further described in conjunction with description of an example method of capacitive sensing.
Input device 100 may be configured to provide input to an electronic system 150. Input device 100 may be physically separate from or physically integrated with electronic system 150. Input device 100 may communicate with parts of electronic system 150 using any appropriate communication protocol/mechanism.
The term “electronic system” 150 broadly refers to any system capable of electronically processing information. Some non-limiting examples of electronic systems include personal computers, such as desktop computers, laptop computers, netbook computers, tablets, web browsers, e-book readers, and personal digital assistants. Additional example electronic systems include composite input devices, such as physical keyboards that include input device 100. Further example electronic systems include peripherals such as data input devices (including remote controls and mice), and data output devices (including display screens and printers). Other examples include remote terminals, kiosks, and video game machines (e.g., video game consoles, portable gaming devices, and the like). Other examples include communication devices (including cellular phones, such as smart phones), and media devices (including recorders, editors, and players such as televisions, set-top boxes, music players, digital photo frames, and digital cameras).
In
Input device 100 comprises a sensor element pattern 124 with one or more sensor elements for detecting user input in a sensing region 170. Some capacitive implementations utilize arrays or other regular or irregular patterns of sensor elements to create electric fields. In the capacitive sensing embodiment depicted in
Sensing region 170 encompasses any space above, around, in and/or near input device 100 in which input device 100 detects user input provided by one or more input objects 140. In some embodiments, sensing region 170 extends from a surface of input device 100 in one or more directions into space until signal-to-noise ratios prevent sufficiently accurate object detection. Various embodiments sense input that comprises no contact with any surfaces of input device 100, contact with an input surface (e.g., a touch surface) of input device 100, contact with an input surface of input device 100 coupled with some amount of applied force or pressure, and/or a combination thereof. In various embodiments, input surfaces may be provided by surfaces of casings within which sensor electrodes reside, by face sheets applied over the sensor electrodes or any casings, etc.
Some capacitive implementations utilize “self capacitance” (or “absolute capacitance”) sensing methods based on changes in the capacitive coupling between sensor electrodes and an input object 140. In various embodiments, an input object 140 near the sensor electrodes alters the electric field near the sensor electrodes, changing the measured capacitive coupling. In one implementation, an absolute capacitance sensing method operates by modulating sensor electrodes with respect to a reference voltage (e.g., system ground), and by detecting the capacitive coupling between the sensor electrodes and input object(s) 140 as a resulting signal. “Modulating a sensor electrode” comprises processing system 110 or some other circuit driving a modulated signal onto the sensor electrode or otherwise modulating a potential of the sensor electrode with respect to another potential.
Some capacitive implementations utilize “mutual capacitance” (or “transcapacitance”) sensing methods based on changes in the capacitive coupling between sensor electrodes. In various embodiments, an input object 140 near the sensor electrodes alters the electric field between the sensor electrodes, thus changing the measured capacitive coupling. In one implementation, a transcapacitive sensing method operates by detecting the capacitive coupling between one or more “transmitter sensor electrodes” (also “transmitter electrodes”) and one or more “receiver sensor electrodes” (also “receiver electrodes”) as further described below. Transmitter sensor electrodes may be modulated relative to a reference voltage (e.g., system ground) to transmit a transmitter signals. Receiver sensor electrodes may be held substantially constant relative to the reference voltage to facilitate receipt of resulting signals. A resulting signal may comprise effect(s) corresponding to one or more transmitter signals, and/or to one or more sources of environmental interference (e.g., other electromagnetic signals). Sensor electrodes may be dedicated transmitter electrodes or receiver electrodes, or may be configured to both transmit transmitter signals and receive resulting signals.
Processing system 110 is configured to operate the hardware of input device 100 to detect input in sensing region 170. Processing system 110 comprises parts of or all of one or more Application Specific Integrated Circuits (ASICSs), one or more Integrated Circuits (ICs), one or more controllers, and/or other circuitry components, or some combination thereof. A processing system 110 for a capacitance sensing input device may comprise transmitter circuitry configured to transmit signals with transmitter sensor electrodes, and/or receiver circuitry configured to receive signals with receiver sensor electrodes. In some embodiments, processing system 110 comprises electronically-readable instructions, such as firmware code, software code, and/or the like. Processing system 110 may be coupled with and used to operate or provide information to one or more components of an electronic system 150, such as to a display, a wireless transceiver, an input device (e.g., an audio input device, an image input device, a proximity sensing input device, etc.).
Processing system 110 may be implemented as a set of modules that handle different functions. Different modules and combinations of modules may be used. For example, a sensor module may perform one or more of absolute capacitive sensing and transcapacitive sensing to detect inputs in the form of resulting signals received from one or more sensor elements, and a determination module may determine positions of inputs based on the detected capacitances and/or detected changes in capacitance in the resulting signals,
In some embodiments, processing system 110 operates sensor element pattern 124 of input device 100 to produce electrical signals (referred to as “resulting signals”) indicative of input or lack of input in sensing region 170. Processing system 110 may perform any appropriate amount of processing on the electrical signals. For example, processing system 110 may digitize analog electrical signals obtained from sensor element pattern 124. As another example, processing system 110 may perform filtering, demodulation, or other signal conditioning. In various embodiments, processing system 110 generates a capacitive image from the resulting signals received with sensor element pattern 124. In some embodiments, processing system 110 may determine positional information for detected input object(s) 140, recognize inputs as commands, recognize handwriting, and the like. “Positional information” broadly encompasses absolute position, relative position, velocity, acceleration, and other types of spatial information in various dimensions.
In some embodiments, processing system 110 responds directly to user input (or lack of user input) in sensing region 170 by causing one or more actions. Example actions include changing operation modes, as well as Graphic User Interface (GUI) actions such as cursor movement, selection, menu navigation, and other functions. In some embodiments, processing system 110 provides information about the input (or lack of input) to some part of the electronic system (e.g., to a central processing system of an electronic system 150 that is separate from processing system 110, if such a separate central processing system exists).
In some embodiments, input device 100 is implemented with additional input components, such as buttons 130, which may be operated by processing system 110. Other types of additional input components include sliders, balls, wheels, switches, and the like. Conversely, input device 100 may be implemented with no additional input components.
Some mechanisms of processing system 110 may be implemented and/or distributed as a software program on information bearing media (e.g., non-transitory computer-readable storage media) which include instructions readable by and executable by electronic processors. Some non-limiting examples of such media include various discs, memory sticks, memory cards, memory modules, and the like.
For purposes of clarity of illustration and description, a non-limiting simple sensor element pattern 124, comprising a matrix of rectangular sensor electrodes 220 (2201,1, 2201,2, 2201,3, 2201,y, 2202,1, 2202,2, 2202,3, 2202,Y, 2203,1, 2203,2, 2203,3, 2203,Y, 220X,1, 220X,2, 220X,3, and 220X,Y)) and a grid electrode 222, has been illustrated. The matrix may be disposed in a variety of other shapes/arraignments and the sensor electrodes 220 may have other shapes. It is appreciated that, in other embodiments, numerous other capacitive sensor element patterns may be employed with the described techniques, including but not limited to: patterns with a single sensor electrode; patterns with a single set of sensor electrodes; patterns with two sets of sensor electrodes disposed in a single layer (without overlapping); patterns with two sets of sensor electrodes disposed in a single layer employing jumpers at crossover regions between sensor electrodes; patterns that utilize sensor electrodes in a crossing pattern, such as an X-Y crossing pattern; patterns that utilize one or more display electrodes of a display device such as one or more segments of a common voltage (VCOM) electrode; patterns with one or more of source electrodes, gate electrodes, anode electrodes, and cathode electrodes; and patterns that provide individual button electrodes.
Sensor element pattern 124 comprises an array of sensor electrodes 220 (referred collectively as sensor electrodes 220) arranged in X rows and Y columns along an X-Y axis, where X and Y are positive integers, although one of X and Y may be zero. Sensor electrodes 220 are typically ohmically isolated from each other, and also ohmically isolated from grid electrode 222. That is, one or more insulators (not shown) separate individual sensor electrodes 220 (and grid electrode 222) and prevent them from electrically shorting to each other. In some embodiments, sensor electrodes 220 and grid electrode 222 may additionally or alternatively be separated by insulative gap (not shown) surrounding an individual sensor electrode 220 (e.g., sensor electrode 2201,1). An insulative gap separating sensor electrodes 220 and grid electrode 222 may be filled with an electrically insulating material, or may be an air gap. In some embodiments, sensor electrodes 220 and grid electrode 222 are vertically separated by one or more layers of insulative material. In some other embodiments, sensor electrodes 220 and grid electrode 222 are separated by one or more substrates; for example, they may be disposed on opposite sides of the same substrate, or on different substrates. In yet other embodiments, grid electrode 222 may comprise multiple layers on the same substrate, or on different substrates. In one embodiment, a first grid electrode may be formed on a first substrate or first side of a substrate and a second grid electrode may be formed on a second substrate or a second side of a substrate. For example, a first grid comprises one or more common electrodes disposed on a thin film transistor (TFT) layer of display device 160 and a second grid electrode is disposed on the color filter glass of display device 160.
In embodiments where sensor electrodes 220 are utilized with a display device, non-opaque conductive materials may be utilized for sensor electrodes 220. In embodiments where sensor electrodes 220 are not utilized with a display device, opaque conductive materials may be utilized for the sensor electrodes 220. Materials suitable for fabricating the sensor electrodes 220 include ITO, aluminum, silver, copper, molybdenum, and conductive carbon materials, among others. Sensor electrodes 220 may also be formed from a mesh of conductive material, such as a plurality of interconnected thin metal wires. Various sensor electrodes 220 may be formed of a stack of different conductive materials. Grid electrode 222 may be fabricated similarly to sensor electrodes 220.
Grid electrode 222 is disposed between at least two of the sensor electrodes 220. Grid electrode 222 may, in some embodiments, at least partially circumscribe the plurality of sensor electrodes 220 as a group, and may also, or in the alternative, completely or partially circumscribe one or more of the sensor electrodes 220. In one embodiment, grid electrode 222 is a planar body having a plurality of apertures, each aperture circumscribing a respective one of sensor electrodes 220. In some embodiments, grid electrode 222 may comprise a plurality of non-contiguous segments. In various embodiments, grid electrode 222 is disposed between at least two of sensor electrodes 220 such that grid electrode 222 is on different layer (i.e., different substrate or side of the same substrate) and overlaps a portion of at least two sensor electrodes and the gap between them.
In some embodiments, processing system 110 includes components, modules, and/or circuitry configured to drive a modulated signal or transmitter signal on at least one of the sensor electrodes 220 for capacitive sensing during periods in which input sensing is desired. Processing system 110 may also configured to operate grid electrode 222 as a shield electrode. Processing system 110 may also include components, modules, and/or circuitry configured to receive resulting signals with sensor element pattern 124 (sensor electrodes 220 and/or grid electrode(s) 222) comprising effects corresponding to the modulated signals or the transmitter signals during periods in which input sensing is desired. In some embodiments, processing system 110 further includes components, modules, and/or circuitry configured to determine a position of the input object 140 in sensing region 170 from the received resulting signals. In some embodiments, processing system 110 may provide a signal to another processor, for example to a host processor of electronic system 150. The signal may include information indicative of the determined position(s) of input object(s) 140 or information indicative of the resulting signal(s).
In a first mode of operation, the sensor electrodes 220 may be utilized to detect the presence (lack thereof) and/or position of an input object 140 via absolute sensing techniques. That is, processing system 110 is configured to modulate one or more sensor electrodes 220 to acquire measurements of changes in capacitive coupling between the modulated sensor electrodes 220 and an input object 140 to determine the position of the input object. Processing system 110 is further configured to determine changes of absolute capacitance based on a measurement of resulting signals received with sensor electrodes 220 which are modulated. Such resulting signals are utilized by processing system 110 or other processor to determine the presence and/or position of input object(s) 140.
In a second mode of operation, the sensor electrodes 220 may be utilized to detect the presence (or lack thereof) and/or position of an input object via transcapacitive sensing techniques when a transmitter signal is driven onto grid electrode 222. That is, processing system 110 is configured drive grid electrode 222 with a transmitter signal and receive resulting signals with each sensor electrode 220, where a resulting signal comprising effects corresponding to the transmitter signal, which is utilized by processing system 110 or other processor to determine the presence and/or position of input object(s) 140.
In a third mode of operation, the sensor electrodes 220 may be split into groups of transmitter and receiver electrodes utilized to detect the presence (lack thereof) and/or position of an input object via transcapacitive sensing techniques. That is, processing system 110 may drive a first group of sensor electrodes 220 with a transmitter signal and receive resulting signals with the second group of sensor electrodes 220, where a resulting signal comprising effects corresponding to the transmitter signal. The resulting signal is utilized by processing system 110 to determine the presence and/or position of input object(s) 140.
Input device 100 may be configured to operate in any one of the modes described above, and/or in other modes. Input device 100 may also be configured to switch between any two or more of the modes described above and/or other modes and/or to simultaneously operate different portions of sensor element pattern 124 in the same or different modes.
As depicted in
Circuitry 305 represents the internal and inherent capacitances and resistances in an input device 100 that exist when measuring a background capacitance, CB, and a finger capacitance, CF, by coupling processing system (e.g., processing system 110) with a sensor electrode 220 (e.g., sensor electrode 220XY) at a time when an input object 140 is touching or otherwise interacting with the sensor element pattern 124 that includes the sensor electrode 220. Resistance RA represents the on chip (e.g., the integrated circuit or “chip” in which processing system 110 is implemented) routing resistance of a routing trace within a chip that couples amplifier 310 with routing trace 240. Resistance RB represents a routing resistance, such as the resistance of routing trace (e.g., routing trace 240) that couples with the sensor electrode (e.g., sensor electrode 220XY) of the sensor element pattern (e.g., sensor element pattern 124). Resistance RG represents a routing resistance of the guard route, which may include the resistance routing traces both on the chip and on the sensor element pattern (e.g., routing trace 242) that couples VGUARD with a guard electrode and is also utilized as a transmitter voltage. CA represents the unguarded on-chip capacitance, and CG represents capacitance of the guard route. Removing CF from
A first input (the non-inverting input) of operational amplifier 310 is configured to couple with a modulated signal, such as the modulated voltage VGUARD. A second input (the inverting input) is configured to couple with and receive a resulting signal, in the form of an input current, IIN, from a capacitive sensor electrode (e.g., sensor electrode 220XY, such as via routing trace such as 240 illustrated in
Mixer 315 has two inputs and an output. On one of the two inputs, mixer 315 receives current, IOUT, that is output from the common node between first current mirror 311 and second current mirror 312. On the other of the two inputs, mixer 315 receives a mixing signal, SMIX. Mixer 315 operates to mix IOUT with mixing signal SMIX to achieve mixed current IMIX. Mixer then outputs the mixed current, IMIX. Processing system 110 controls the phase of the mixing signal, SMIX. When a mixing signal, SMIX, that is in phase with a resulting signal (and IMIX) is used, 0% of IOUT should eliminated or negated by being mixed by mixer 315. When a mixing signal, SMIX, that is greater than 0 degrees and less than 90 degrees out of phase with the resulting signal (and IOUT) is used, a portion of IOUT will be eliminated or negated in the mixing process. Similarly, when a mixing signal that is 90 degrees out of phase with the resulting signal (and IOUT) is used, most or all of IOUT will be eliminated or negated in the mixing process.
In some embodiments, processing system 110 is configured to phase-shift the mixing signal, SMIX, in response to detection of an input object interaction using the resulting signal that is received as an input to amplifier 310. In some embodiments, processing system 110 shifts the phase of SMIX back to its un-shifted, or first phase, after presence of an input object is no longer detected using the resulting signals that is received as an input to amplifier 310. The presence of an input object 140 can be detected in numerous ways. One way is that the added capacitance, CF, of the input object, increases the amplitude of the resulting signal over a signal that only includes background capacitance, CB. In some embodiments, in response to processing system 110 noting this increase in amplitude in the resulting signal, it directs a phase shift in the mixing signal, SMIX, from a first phase that is utilized for mixing when no input object contribution is noted in the resulting signal to a second phase. The first phase and the second phase are different, i.e., phase-shifted with respect to one another.
When processing system 110 phase-shifts the mixing signal, SMIX, in response to detection of an input object interaction using the resulting signal that is received as an input to amplifier 310, the this may comprise phase-shifting the mixing signal by a predetermined amount from the mixing signal that is utilized when the presence of an input object interaction is not detected using the resulting signal that is received as an input to amplifier 310. In various embodiments, the predetermined amount of phase shift is greater than 0 degrees and less than 90 degrees. In some embodiments, the predetermined amount is set at 90 degrees of phase shift, which will typically eliminate the contribution of a baseline aspect of the resulting signal during the mixing process. The predetermined amount may be determined in advance, such as in a factory or laboratory, and then preset in memory or logic associated with processing system 110. For example, the predetermined amount may be equal to a phase difference between the resulting signal when an input object is detected and a baseline version of the resulting signal with no input object detected. When not determined in advance, either empirically, by estimation, or by other means, processing system 110 may dynamically determine the amount of phase shift to apply by incrementally increasing the phase shift of the mixing signal until the presence of the baseline signal has been minimized to a predetermined extent or else eliminated completely during a baseline condition when no input object interaction is present in a resulting signal; and/or by incrementally increasing the phase shift of the mixing signal until the presence of the amplitude of the IMIX signal reaches a predetermined threshold or else reaches a maximum during a condition when an input object interaction is present in a resulting signal. A tradeoff for completely eliminating the presence of the baseline resulting signal in the mixing process is that overall signal amplitude, when CF contributes to the resulting signal, will be lower due to eliminating some of this input-object-detecting resulting signal as well. In some embodiments, the baseline mixing signal (used when no input object interaction is detected) is set to be 90 degrees out of phase with the transmitter signal (e.g., VGUARD in
In some embodiments, there are numerous modulated signals of differing frequencies that can be transmitted to the sensor element pattern for the purposes of capacitive sensing. In such an embodiment, modulated signal (e.g., VGUARD) of
With continued reference to
It should be appreciated that signals 401 and 402 are not measured simultaneously, but instead at different times and then superimposed in time in
It should be appreciated that responses 501 and 502 are not measured simultaneously, but instead at different times and then superimposed in
While sinewave signals have been utilized to produce the results illustrated in
While
Although a switch between a phase-shifted mixing signal (employed when an input object is sensed in a resulting signal) and a non-phase shifted mixing signal (employed in baseline conditions when no input object is sensed using a resulting signal) takes place in many described embodiments, in some other embodiments, mixer 315 may simply utilize the phase-shifted signal full time with the tradeoff of losing some to all of any baseline condition resulting signal during the mixing process and reducing overall signal to noise ratio (SNR) of at least the baseline condition resulting signal. In another embodiment, processing system 110 sets fixed phase-shifted relationship between the phase of the baseline resulting signal and the phase of the mixing signal, SMIX, such that a desired/predetermined SNR is maintained for either or both of the conditions where: 1) there is no input object interaction measured in the resulting signal, and 2) there is an input object interaction measured in the resulting signal.
With reference to
With continued reference to
With continued reference to
The phase-shift applied to the mixing signal is greater than zero degrees. In some embodiments, this may comprise processing system 110 phase-shifting the mixing signal by 90 degrees from the baseline mixing signal. In some embodiments, this may comprise processing system 110 phase-shifting the mixing signal by an amount greater than 0 degrees and less than 90 degrees from the baseline mixing signal (such as in a range between 3 degrees and 30 degrees, as but one example). In some embodiments, this comprises processing system 110 phase-shifting the mixing signal by an amount equal to, or within a narrow range such as two degrees plus or minus, of a phase difference between the resulting signal when an input object interaction is detected and a baseline version of resulting signal with no input object interaction detected.
In some embodiments, the modulated signal described in procedure 610 may be one of a plurality of modulated signals that can be transmitted by a processing system as a transmitter signal, some or all of which differ in frequency. In such an embodiment, where the modulated signal is one of a plurality of modulated signals that comprises at least a second modulated signal modulated at a different frequency than the modulated signal. It should be appreciated that there may be more than two modulated signals and some or all of these modulated signals may be modulated at different frequencies from one another. In some embodiments, the above described phase-shifting of the mixing signal used in the mixer comprises phase-shifting the mixing signal by a predetermined amount associated with the one of the plurality of modulated signals that has been utilized in capacitive sensing to generate the resulting signal that is being processed. In some embodiments, where a plurality of modulated signals exists and two or more are modulated at different frequencies, a first predetermined phase-shift is associated with a first modulated signal that has been modulated at a first frequency while a second phase-shift, that is different from the first phase-shift, is associated with a second modulated signal that has been modulated at a second frequency that is different from the first frequency. Predetermined amounts of phase-shift(s) associated with particular modulated signal(s) may be stored in a processing system and/or memory during manufacture, and may be determined empirically or by any other suitable manner
The examples set forth were presented in order to best explain, to describe particular applications, and to thereby enable those skilled in the art to make and use embodiments of the described examples. However, those skilled in the art will recognize that the foregoing description and examples have been presented for the purposes of illustration and example only. The description as set forth is not intended to be exhaustive or to limit the embodiments to the precise form disclosed.
Reference throughout this document to “one embodiment,” “certain embodiments,” “an embodiment,” “various embodiments,” “some embodiments,” or similar term means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment. Thus, the appearances of such phrases in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner on one or more embodiments without limitation.