Claims
- 1. A capacitor in a semiconductor configuration on a substrate, comprising:a noble-metal-containing first capacitor electrode.formed with a plurality of mutually spaced-apart lamellae, said lamellae being oriented substantially parallel to a surface of said substrate and defining two mutually opposite flanks; a support structure arranged on said two flanks of said lamellae mechanically and electrically connecting said lamellae to one another on each of said two flanks thereof; a capacitor dielectric formed of a material selected from the group consisting of high-∈ dielectric and ferroelectric material disposed on said first capacitor electrode; and a second capacitor electrode on said capacitor dielectric.
- 2. The capacitor according to claim 1, wherein the substrate, on a surface thereof facing toward said lamellae, is formed with an insulating layer having a contact arranged therein, said contact comprising a diffusion barrier and being connected to said first capacitor electrode.
- 3. The capacitor according to claim 2, wherein said substrate contains a MOS transistor and said contact connects a source-drain region of said transistor to said first electrode.
Priority Claims (1)
Number |
Date |
Country |
Kind |
198 42 704 |
Sep 1998 |
DE |
|
CROSS-REFERENCE TO RELATED APPLICATION
This is a division of U.S. application Ser. No. 09/395,316, filed Sep. 13, 1999 now U.S. Pat. No. 6,258,056.
US Referenced Citations (13)
Foreign Referenced Citations (3)
Number |
Date |
Country |
197 07 977 |
Jun 1998 |
DE |
0 779 656 |
Jun 1997 |
EP |
08-167702 |
Jun 1996 |
JP |