Claims
- 1. A silicon carbide coated (c/c) composite, which is resistant to oxidation above 850° C., comprising:(a) a base formed of a C/C composite, (b) a layer of silicon carbide formed on a surface of the base (a), wherein the silicon carbide layer (b) is firmly bonded to the C/C composite base (a) through wicked silicon.
- 2. The silicon carbide coated C/C composite according to claim 1, wherein the silicon carbide coated C/C composite has been treated with a retardant solution which comprises the ions formed from the combination of the following: 10-80 wt % H2O and 90-20 wt % H3PO4.
- 3. A silicon carbide coated (C/C) composite, which is resistant to oxidation at above 850° C., comprising:(a) a base formed of a C/C composite, (b) a layer of silicon carbide formed on a surface of the base (a), wherein the silicon carbide layer (b) is firmly bonded to the C/C composite base (a) through wicked silicon, wherein the wicked silicon is 0.5-5 mm beneath the surface of the C/C composite base (a) as measured in a direction normal to the surface of the base (a).
- 4. The silicon carbide coated C/C composite according to claim 1, wherein the wicked silicon is 1-4 mm beneath the surface of the C/C composite base (a) as measured in a direction normal to the surface of the base (a).
- 5. The silicon carbide coated C/C composite according to claim 2, wherein the silicon carbide coated C/C composite has been treated with a retardant solution which comprises the ions formed from the combination of the following: 10-80 wt % H2O, 20-70 wt % H3PO4, 0-25 wt % MnHPO4. 1.6H2O, 0-30 wt % AlPO4, 0-2 wt % B2O3, 0-10 wt % Zn3(PO4)2 and 0.1-25 wt % alkali metal mono-, di-, or tri-basic phosphate, wherein at least one of AlPO4, MnHPO4. 1.6H2O, and Zn3(PO4)2 is present.
- 6. The silicon carbide coated C/C composite according to claim 5, wherein the silicon carbide coated C/C composite has been treated with a retardant solution which comprises the ions formed from the combination of the following: 20-50 wt % H2O, 30-55 wt % H3PO4, and 5-20 wt % alkali metal mono-, di-, or tri-basic phosphate by weight.
- 7. The silicon carbide coated C/C composite according to claim 5, wherein the silicon carbide coated C/C composite has been treated with a retardant solution which comprises the ions formed from the combination of the following: 20-50 wt % H2O, 30-55 wt % H3PO4, 0-15 wt % MnHPO4. 1.6H2O, 2-15 wt % AlPO4, 0.5-2 wt % B2O3, 1-7 wt % Zn3(PO4)2 and 10-20 wt % alkali metal mono-, di-, or tri-basic phosphate by weight.
- 8. The silicon carbide coated C/C composite according to claim 5, wherein the silicon carbide coated C/C composite has been treated with a retardant solution which comprises the ions formed from the combination of the following: 20-50 wt % H2O, 30-55 wt % H3PO4, 2-15 wt % AlPO4, 0.5-2 wt % B2O3, and 10-20 wt % alkali metal mono-, di-, or tri-basic phosphate by weight.
- 9. The silicon carbide coated C/C composite according to claim 5, wherein the silicon carbide coated C/C composite has been treated with a retardant solution which comprises the ions formed from the combination of the following: 20-50 wt % H2O, 30-55 wt % H3PO4, 1-7 wt % Zn3(PO4)2 and 10-20 wt % alkali metal mono-, di-, or tri-basic phosphate by weight.
- 10. The silicon carbide coated C/C composite according to claim 5, wherein the silicon carbide coated C/C composite has been treated with a retardant solution which comprises the ions formed from the combination of the following: 20-50 wt % H2O, 30-55 wt % H3PO4, 2-15 wt % MnHPO4. 1.6H2O and 10-20 wt % alkali metal mono-, di-, or tri-basic phosphate by weight.
- 11. The silicon carbide coated C/C composite according to claim 5, wherein the alkali metal mono-, di-, or tri-basic phosphate is selected from the group consisting of NaH2PO4, KH2PO4 and mixtures thereof.
- 12. The silicon carbide coated C/C composite according to claim 5, wherein the retardant solution contains essentially no HCl, tin oxides, silicon oxides, titanium oxides or lithium compounds.
CROSS REFERENCE TO RELATED APPLICATION
This application is a divisional of Application Ser. No. 09/708,891 filed Nov. 8, 2000, now U.S. Pat. No. 6,555,173 the entire contents of which is hereby expressly incorporated by reference.
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