The present application relates generally to carbon nanotubes and more particularly to carbon nanotube—micro or nanoparticle hybrids and methods of making such hybrids.
Carbon nanotubes (CNTs) exhibit fascinating electrical, thermal, and optical properties, and remarkable mechanical stability, which makes these unique one-dimensional nanostructures promising candidates for use in a variety of devices and composites. For review of carbon nanotubes and their properties, see e.g. Y. Huang, X. Duan, Y. Cui, L. J. Lauhon, K. H. Kim, C. M. Lieber, Science 2001, 294, 1313; X. Duan, Y. Huang, R. Agarwal, C. M. Lieber, Nature 2003, 421, 241; Y. Cui, Q. Wei, H. Park, C. M. Lieber, Science 2001, 293, 1289; J. Kong, N. R. Franklin, C. Zhou, M. G. Chapline, S. Peng, K. Cho, H. Dai, Science 2000, 287, 622; M. R. Falvo, R. M. Taylor, A. Helser, V. Chi, F. P. Brooks, S. Washburn, R. Superfine, Nature 1999, 397, 236; M. F. Yu, O. Lourie, M. J. Dyer, K. Moloni, T. F. Kelly, R. S. Ruoff, Science 2000, 287, 637; J. P. Lu, Phys. Rev. Lett. 1997, 79, 1297.
A considerable progress has been achieved in growing aligned CNT bundles in predetermined orientations on planar substrates by chemical vapor deposition (CVD), see e.g. B. Q. Wei, R. Vajtai, Y. Jung, J. Ward, R. Zhang, G. Ramanath, P. M. Ajayan, Nature 2002, 416, 495; J. Kong, H. T. Soh, A. M. Cassell, C. F. Quate, H. Dai, Nature 1998, 395, 878; K. Hata, D. N. Futaba, K. Mizuno, T. Namai, M. Yumura, S. Iijima, Science 2004, 306, 1362; V. Bajpai, L. M. Dai, and T. Ohashi, J. Am. Chem. Soc. 2004, 126, 5070; B. Q. Wei, R. Vajtai, Y. Jung, J. Ward, R. Zhang, G. Ramanath, P. M. Ajayan, Chem. Mater. 2003, 15, 1598. Typical CVD approaches to grow oriented CNTs involve lithographic templating and activation of catalyst-containing nanoparticles or thin films on the substrate, or combining gas-phase catalyst delivery and substrate-selective catalyst activation on certain portions of patterned surfaces.
Although recent work has shown that the fabrication of hybrid nanostructures comprising CNTs and nanoparticles or nanowires is possible, see e.g. S. Huang, Carbon 2003, 41, 2347; Z. P. Huang, D. L. Carnahan, J. Rybczynski, M. Giersig, M. Sennett, D. Z. Wang, J. G. Wen, K. Kempa, Z. F. Ren, Appl. Phys. Lett. 2003, 82, 460; T. Sainsbury, D. Fitzmaurice, Chem. Mater. 2004, 16, 3780; Y. L. Gu, L. Y. Chen, Z. F. Li, Y. T. Qian, W. Q. Zhang, Carbon 2004, 42, 235, B. Q. Wei, J. W. Ward, R. Vajtai, R. Ma, P. M. Ajayan, G. Ramanath, Chem. Phys. Lett. 2002, 354, 264-268, L. Ci, J. Bai, Adv. Mater. 2004, 16, 2021, the orientation of CNTs on nanoparticles in these nanostructures was random.
One embodiment of the invention includes a structure, comprising at least one microsized or nanosized curved surface and a plurality of aligned carbon nanotube bundles grown on the curved surface.
a-d are SEM images showing (a) CNT pillars grown over 6.84 μm silica spheres; (b) forest of aligned CNTs formed by close packed assembly of spheres; (c) a wall formed from aligned CNTs grown on a chain of closely spaced spheres; (d) top-view of CNT pillars grown on isolated spheres.
a-e are SEM images showing random CNT growth over silica spheres of different diameters: (a) 2.4 μm, (b) 490 nm, (c) 400 nm. High magnification SEM images show (d) clean CNTs grown on 490 nm silica spheres, and (e) amorphous C with Fe nanoparticles on 400 nm silica spheres exposed to the CVD precursors.
a presents Raman spectra showing D and G bands from CNTs grown on silica spheres of different diameters (shown alongside the curves).
b is a plot of D band-G band intensity ratio as function of silica sphere diameter.
The inventors developed a methodology that allows for growing aligned carbon nanotubes or carbon nanotube bundles on at least micro and nanosized particles. The methodology also allows controlling the alignment of carbon nanotube bundles by adjusting the particle size and packing.
The methods for growing carbon nanotubes on non-planar confined geometries, in the micron and submicron range, such as microsized or nanosized particles, can open up new ways for organizing CNTs for devices, through the application of colloidal chemistry techniques on the particle-CNT hybrid building blocks.
The terms “carbon nanotube bundle” and “carbon nanotube pillar” are used interchangeably, each referring to structures comprising a plurality of carbon nanotubes that are meandered or roped within the bundle or pillar and that are pointing in the same direction.
The term “curved surface” refers to surfaces of confined geometries having curvature radius of micro or nanometer size.
Aligned carbon nanotubes or nanotube bundles can be grown on a surface of microsized or nanosized particle of any material. In some embodiments, aligned carbon nanotubes or nanotube bundles may be formed on the surfaces of oxide particles, such as silica, alumina, MgO, MnO, HfO2, Gd2O3, indium tin oxide and other metal oxide particles. Carbon nanotube bundles can be also grown on surface of non-oxide particles. Preferably, the particles are substantially spherical particles, such as spherical, oval and roughly spherical (i.e., generally spherical particles with one or more planar or angular surfaces) particles. The particles may be micro sized (preferably 1 to 1,000 micron diameter), macro sized (preferably 1,000 microns to 1 cm diameter) or nano sized (200 nm to 1 micron). The particles may be located on horizontal or non-horizontal substrate surfaces. For example, the particles may be located on a vertical substrate surface. If desired, the substrate may be omitted and the particles may be suspended in a fluid.
Aligned carbon nanotube bundles can be also grown on curved surfaces other than microsized or nanosized particles. For example, the aligned carbon nanotubes can be grown on a surface of a bulk (i.e., non-particle) substrate of any convexity that mimics a microsized or nanosized particle. Convexities, such as micro or nano scale protrusions can be formed on the bulk substrate by known methods such as lithography or roughening. The curved surface may comprises a horizontal or non-horizontal (such as vertical) bulk substrate surface. The morphology of the hybrid nanotube bundle/curved surface structures can controlled by varying the size and/or packing of the particles or protrusions.
Carbon nanotube bundles can comprise single wall carbon nanotubes or multiwalled carbon nanotubes. Aligned carbon nanotubes can be grown over a micro or nanosized curved bulk or particle surface by any method if it satisfies geometrical requirements, i.e. requirements on size and density or packing, discussed below.
In some embodiments, the growth of nanotubes can be achieved without metal catalyst predeposition. Instead CVD nanotube growth can be stimulated by exposing the substrate or particles to vapor mixtures comprising xylenes (C8H10), a nanotube-forming precursor, and ferrocene (Fe(C5H5)2), a nanotube catalyst, at about 600 to 1100° C., preferably at about 725 to 825° C. However, other suitable source gases and temperatures may be used instead. Ferrocene can be dissolved in xylenes (which preferably contains different isomers) at concentrations of about 0.01 g/ml, the mixture can be pre-heated, co-evaporated and fed into the CVD chamber. The reactants preferably comprise of 0.001 to 1 percent of the ferrocene/xylenes mixture. The details of method of growing nanotubes without metal catalyst predisposition can be found in Zhang et. al. Applied Physics Letters, vol. 77, p. 3764, 2000.
In an alternative method, nanotube growth can be performed by depositing catalyst islands on the bulk or particle curved surface using an AFM tip, lithography, spin-on coating or other deposition methods, and then exposing the catalyst islands to a carbon-containing source gas at an elevated temperature. The catalyst islands can comprise, for example, Fe2O3 or other catalysts materials including molybdenum, cobalt, nickel, zinc, or oxides thereof. The carbon containing gas can be, for example, methane or another hydrocarbon gas. Details of growing carbon nanotubes on catalyst islands can be found, for example, in U.S. Pat. No. 6,346,189 to Dai et. al. The carbon nanotube growth method that includes depositing catalyst islands can be used to grow nanotubes on non-oxide surfaces.
The alignment of carbon nanotube bundles can be controlled by adjusting the size of the particles and their packaging or density. If the size of a particle is no less than a first critical diameter (D1), then aligned carbon nanotube bundles can grow in a direction normal to the surface of the particle, independent of whether the particle is close packed or isolated. If the size of a particle is greater than a second critical diameter (D2) and less than D1, then aligned carbon nanotube bundles can grow in a direction normal to the surface of the particle, if the particles are closely packed, and in a direction that is not normal to the surface, when the particles are isolated particles. When the size of the particle is less than D2 but greater than a third critical diameter D3, carbon nanotubes grow on the particles in a random manner without any alignment. The density of carbon nanotubes decreases in the range between D3 and a fourth critical diameter D4 as significant amount of amorphous carbon accompanies carbon nanotubes. When diameter is below D4, nanotubes do not grow on the surface of the particles. Particular values of D1, D2, D3 and D4 depend on material of the particles and on carbon nanotube growth rate. For example when CNT growth rate increase, then particle size which corresponds to D1, D2, D3 and D4 decreases and/or the bundle alignment increases.
Whether or not carbon nanotubes form aligned bundles can determined by known experimental techniques such as scanning electron microscopy (SEM) or reflection high energy electron diffraction (RHEED).
For example,
The nanotube structures can be grown on microsized or nanosized particles deposited on a substrate by colloidal chemistry methods. For example, the particle can be suspended in a solvent and then drop-cast on a clean substrate surface. The particle assembly density on the substrate can be varied by adjusting a concentration of the particles in the suspension and/or by tilting the substrate. The samples can then be dried to remove the excess solvent.
Alternatively, the nanotube structures can be grown in patterned particle structures or architectures. For example, combination of colloidal chemistry and lithography can be applied to form a pattern of micro or nanosized particles on the substrate. Then, carbon nanotube bundles grown on the particles will follow the pattern. Example of such patterned structure is shown in
The carbon nanotube structures can be utilized in devices, such as electronic devices. For example, the patterned structures can be used in electronic switching, memory storage, sensing and actuation devices. The structures can also be used in field emission devices (FEDs). The aligned CNT bundles act as electron emitting field emission cathodes in these devices. For example, CNT bundles grown on roughened bulk substrate surfaces described above can have a few degree distribution in their orientation, which can help to avoid smearing effect found in conventional FEDs. Alternatively, a monolithic structure comprising aligned CNT bundles grown on individual particles can be used as optical labels or radio frequency ID tags in a fluid environment, such as for in-vivo diagnostics.
The embodiments of the present invention can be illustrated in more details by the following example, however, it should be understood that the present invention is not limited thereto.
Silica microspheres of chosen diameters between 6.84 μm and 160 nm were drop coated from a dilute suspension in acetone onto device quality Si(001) wafers pre-cleaned successively in ultrasonic baths of trichloroethylene, acetone and isopropyl alcohol. The nanoparticle assembly density was controlled by adjusting the acetone suspension concentration, and substrate tilting. The samples were dried at room temperature for ˜1 hour to remove acetone to obtain silica particle assemblies on the substrate. Carbon nanotubes (CNTs) were grown by exposing these samples to a xylene-ferrocene mixture in a vacuum tube furnace at 775° C. in 100 sccm Ar, known to yield CNT growth selectively on silica in exclusion to silicon, as described in B. Q. Wei, R. Vajtai, Y. Jung, J. Ward, R. Zhang, G. Ramanath, P. M. Ajayan, Chem. Mater. 15, 1598 (2003) incorporated herein by reference in its entirety. The CNT morphology was characterized by SEM in a JEOL 6330F FESEM microscope operated at 5 kV. Raman spectroscopy was conducted using a Renishaw Ramanscope system with a 514 nm Argon laser.
Densely aligned CNT pillars grow on >4.1 μm-diameter silica microspheres in a direction normal to the silicon substrate (see
Decreasing the diameter of silica microspheres below ˜2.4 μm yields CNTs, but without any alignment (see
Raman spectroscopy of the CNT-silica sphere heterostructures shows that the gradual decrease in CNT number density correlates with the increased disorder attributed to the formation of sp3 carbon, see A. C. Ferrari, J. Robertson, Phys Rev B 2000, 61, 14095.
The continuous change in morphology from aligned CNT bundles to randomly oriented CNTs with decreasing silica particle size can be understood as follows. Aligned CNT grow normal to the surface of large microspheres due to the reduction in energy obtained by coordinated van der Waals interactions between adjacent CNTs, in a manner similar to that observed in self-assembled molecular layers (SAMs). Although the intertube spacing is ˜20-30 nm, the waviness of the CNTs causes adjacent tubes cross each other within van der Waals interaction distance at different points along their lengths, enabling a net lateral attractive force between the CNTs. The same effect also drives alignment of bundles on adjacent microspheres. The high curvature on smaller microspheres results in a smaller number of CNTs separated by large angular separations. Both factors decrease the number of crossing points, and the extent of the lateral reinforcing force, hence resulting in random CNT growth which gradually disappears due to preference for amorphous carbon formation.
In summary, CNT nucleation and morphology on microparticles are strongly dependent on the particle size and packing. By adjusting these parameters, the CNT growth and orientation can be controlled. Novel morphologies can be obtained by dispersing the spheres on substrates that inhibit CNT growth. Geometrical confinement below a critical particle size inhibits the growth of aligned CNT bundles due to deposition of amorphous carbon and the high angular spacing between a smaller number of bundles which are unfavorable for laterally reinforced alignment of the CNTs by van der Waals forces. This lateral size dependence of the substrate surface will be an important factor that may limit the growth of highly oriented one-dimensional nanostructures on nanoscale patterns.
Although the foregoing refers to particular preferred embodiments, it will be understood that the present invention is not so limited. It will occur to those of ordinary skill in the art that various modifications may be made to the disclosed embodiments and that such modifications are intended to be within the scope of the present invention.
All of the publications, patent applications and patents cited herein are incorporated herein by reference in their entirety.
This application is a continuation-in-part of U.S. patent application Ser. No. 10/361,640, filed Feb. 11, 2003, which claims priority to U.S. Provisional Patent Applications Nos. 60/356,069, filed Feb. 11, 2002, and 60/385,393, filed Jun. 3, 2002. This application also claims priority to U.S. Provisional Patent Application No. 60/663,704, filed Mar. 21, 2005. All of the above applications are incorporated herein by reference in their entirety.
This invention was made with government support under the Office of Naval Research grant No. N00014-00-1-2050 and the National Science Foundation grants Nos. DMI-0304028 and DMR 9984478. The United States government may have rights in this invention.
Number | Date | Country | |
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60663704 | Mar 2005 | US | |
60356069 | Feb 2002 | US | |
60385393 | Jun 2002 | US |
Number | Date | Country | |
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Parent | 10361640 | Feb 2003 | US |
Child | 11384524 | Mar 2006 | US |