The disclosure of Japanese Patent Application No. 2007-195063 filed on Jul. 26, 2007 including the specification, drawings and abstract is incorporated herein by reference in its entirety.
1. Field of the Invention
The present invention relates to a carbon thin film manufacturing method for forming a diamond-like carbon (DLC) coating (hard carbon thin film) on a substrate, and a carbon thin film coated body formed by this manufacturing method.
2. Description of the Related Art
Due to its high hardness and low friction coefficient, application of a diamond-like carbon coating (hereinafter, referred to as DLC coating) to a sliding portion is effective in achieving enhanced durability, reduced friction loss, and the like. In recent years, such a DLC coating has been frequently used as a protective film for various sliding members, tools, magnetic recording media, magnetic heads, and the like.
Due to the above-described characteristics, as shown in
However, in the above-described example, loss of the DLC coating 1 due to its delamination from the valve shaft 3 may induce hydraulic pressure leakage, so it is desirable to improve the adhesion between the DLC coating 1 and the valve shaft 3. While the DLC coating 1 is formed on the surface of the valve shaft 3, the valve shaft 3 is used as a substrate at the time of deposition of the DLC coating 1, and the DLC coating 1 is deposited on top of the substrate. These two components, the substrate and the DLC coating 1, will hereinafter be referred to as a carbon-thin-film coated body 7 as appropriate. Also, a structure that further includes an intermediate layer interposed between the substrate and the DLC coating 1 will hereinafter be referred to as the carbon-thin-film coated body 7 as appropriate.
One conceivable way to improve adhesion is to provide an intermediate layer 6 made of metal between the substrate 5 and the DLC coating 1 (see Japanese Patent Application Publication No. 2004-183699 (JP-A-2004-183699)). However, when the carbon-thin-film coated body 7 includes the intermediate layer 6, configured as described above and as shown in
As another related art, Japanese Patent Application Publication No. 2002-88465 (JP-A-2002-88465) describes a technique in which a substrate (workpiece) is held on a rotary table of a non-equilibrium magnetron sputtering device, a workpiece holder that applies a bias voltage to the substrate (workpiece) is provided (see paragraph “0030” and FIG. 3 of JP-A-2002-88465), and when depositing an intermediate layer, the intermediate layer is deposited on a surface of the substrate (workpiece) by applying a voltage of about −0 to −50 V as a bias voltage to the workpiece holder (and therefore the substrate) (see paragraph “0054” and FIG. 6 of JP-A-2002-88465).
According to this deposition technique, after deposition is carried out until the intermediate layer is deposited to a predetermined film thickness, the power to the evaporation source of the intermediate layer is reduced stepwise with time, and at the same time, the power to the evaporation source of carbon is increased stepwise with time by voltage application to its electrode from a sputter power supply, thereby depositing, on top of the intermediate layer, a layer having a gradient structure in which the composition of metal of the intermediate layer and carbon of a hard carbon coating changes stepwise depending on the location across the film thickness. Then, when the power applied to the evaporation source of the intermediate layer becomes 0 W, the bias voltage to be applied to the substrate (work holder) is set to about −50 V to −700 V, and a hard carbon coating (DLC coating) is formed under this condition until a predetermined film thickness is reached (see paragraph “0054” and FIG. 6 of JP-A-2002-88465). According to this deposition technique, when depositing an intermediate layer, improved adhesion may be achieved by carrying out deposition with a bias of high negative voltage (a high negative voltage of about −500 V to −2000 V as a bias voltage) immediately after the start of deposition of the intermediate layer, and then reducing the bias stepwise to a lower negative voltage (about −0V to −50 V is desirable as the final bias voltage) (see paragraphs “0046” and “0047” of JP-A-2002-88465).
As in the technique described in JP-A-2004-183699, the carbon thin film coated body obtained by this deposition technique is also prone to delamination of the DLC coating 1 which develops from the initiation point of fracture of the intermediate layer 6 as shown in
The present invention provides a carbon thin film manufacturing method that can achieve enhanced adhesion. Also, the present invention provides a carbon thin film coated body having satisfactory adhesion.
A first aspect of the present invention relates to a carbon thin film manufacturing method including depositing an intermediate layer on a surface of a substrate, and forming a diamond-like carbon coating on a surface of the intermediate layer. In the carbon thin film manufacturing method, a bias voltage within a range of 0 V to −30 V is applied to the substrate during the deposition of the intermediate layer.
According to the configuration mentioned above, the intermediate layer is prevented from hardening excessively and thus exhibits increased ductility, which leads to enhanced ability to alleviate the stress and external force exerted from the diamond-like carbon coating deposited on top of the intermediate layer, thereby suppressing the formation of cracks within the intermediate layer which can lead to delamination.
In the carbon thin film manufacturing method according to the above-mentioned aspect, the bias voltage applied to the substrate may be further set to a fixed value within the range of 0 V to −30 V.
In the carbon thin film manufacturing method according to the above-mentioned aspect, the surface of the intermediate layer may be a surface on a side opposite to the substrate.
In the carbon thin film manufacturing method described above, the deposition of the intermediate layer may be carried out using a PVD method, in particular, a magnetron sputtering method.
The diamond-like carbon coating may be formed using either a PVD method or a CVD method.
A second aspect of the present invention relates to a carbon-thin-film coated body, manufactured using the above described method, that includes the intermediate layer formed on the surface of the substrate, and the diamond-like carbon coating formed on the surface of the intermediate layer. According to the above-mentioned configuration, the intermediate layer is prevented from hardening excessively and thus exhibits increased ductility, which prevents the formation of cracks in the intermediate layer and therefore prevents cracking of the diamond-like carbon coating, thereby achieving enhanced adhesion.
In the carbon-thin-film coated body according to the above aspect, the intermediate layer may include chromium (Cr). Also, the intermediate layer may further include tungsten carbide (WC). In the intermediate layer, the weight ratio of WC to Cr may increase with increasing distance from the substrate.
In the carbon-thin-film coated body according to the above aspect, the intermediate layer may have a hardness of 690 DH.
The foregoing and further features and advantages of the invention will become apparent from the following description of example embodiments with reference to the accompanying drawings, wherein like numerals are used to represent like elements and wherein:
A carbon thin film manufacturing method according to an embodiment of the present invention will be described below with reference to
The carbon thin film-coated body 7 is produced using a magnetron sputtering device 10 shown in
The vacuum chamber 11 is provided with an exhaust port 20 for exhausting air from the vacuum chamber 11, an Ar gas inlet port 21 for introducing Ar gas into the vacuum chamber 11, and a hydrocarbon gas inlet port 22 for introducing hydrocarbon gas into the vacuum chamber 11. The exhaust port 20, the Ar gas inlet port 21, and the hydrocarbon gas inlet port 22 are connected to a vacuum pump, an Ar gas source, and a hydrocarbon gas source, respectively. Further, an Ar gas ionization device 23 is provided inside the vacuum chamber 11, and is used at the time of a cleaning step.
The deposition process ends when the carbon-thin-film coated body 7 is obtained after executing the following steps: an evacuation step ST1 for evacuating the vacuum chamber 11, a heating/degassing step ST2, a substrate cleaning step ST3, an intermediate layer deposition step ST4, a DLC layer deposition step ST5, and a cooling step ST6. Now, operation according to this embodiment will be described along with the steps mentioned above, with reference to
After the substrate 5 is placed on the substrate placing portion 18b, and the evacuation step ST1 and the heating/degassing step ST2 mentioned above are executed, in the substrate cleaning step ST3, as shown in
Subsequently, in the intermediate layer deposition step ST4, as shown in
When power is supplied to each target 14 as described above, Cr atoms and WC atoms are knocked out from the Cr target 14A and the WC target 14B, respectively. The knocked-out Cr atoms and WC atoms are attracted toward the substrate 5, and deposit on the substrate 5 while being mixed together, forming the intermediate layer 6 containing a Cr component and a WC component. At this time, Ar ions have been released, which assists in efficient formation of the intermediate layer 6. Further, as shown in
Subsequently, in the DLC layer deposition step ST5, as shown in
Because the intermediate layer 6 of the carbon thin film coated body 7 is deposited by setting the bias voltage applied to the substrate 5 to a fixed value within a range of 0 V to −30 V, the intermediate layer 6 does not harden excessively, and exhibits high ductility. Further, as shown in
In order to avoid a situation where, after the carbon thin film coated body 7 is obtained as described above (the intermediate layer deposition step ST4, the DLC layer deposition step ST5, and the cooling step ST6), defective pieces of the carbon thin film coated body 7 in terms of adhesion (defective adhesion pieces) are passed to the subsequent steps, as shown in
In the barrel polishing step ST7, the carbon-thin-film coated body 7 to be inspected and a large number of grindstones having a spherical shape, for example, are filled in a barrel and agitated, the carbon-thin-film coated body 7 is polished using the barrel polishing technique, and defective adhesion sites are made apparent by the polishing force. In the visual inspection step ST8 that follows the barrel polishing step ST7, it is determined by visual observation whether the delaminated sites are equal to or exceed a predetermined size.
As a result of intensive studies made on the adhesion of the diamond-like carbon coating (DLC coating 1) deposited on the substrate 5 via the intermediate layer 6, it was found through the following inspection that there is a close correlation between the bias voltage applied to the substrate 5 during the deposition of the intermediate layer 6 and the adhesion of the DLC coating 1, and that the adhesion of the DLC coating 1 improves if the deposition of the intermediate layer 6 is carried out by setting the bias voltage applied to the substrate 5 to a fixed value within a range of 0 V to −30 V.
The intermediate layer 6 was deposited by setting the bias voltage applied to the substrate 5 to various values (specifically, 0V, −30V, −40V, −50V, and −150V), and then the DLC coating 1 was deposited in the same manner as in the above-described embodiment to obtain a number of samples of the carbon-thin-film coated body 7. Specifically, 200 pieces of the carbon-thin-film coated body 7 were obtained with respect to each set voltage for inspection. Then, their adhesion was inspected by using the barrel polishing method described above. As a result of this inspection, as shown in
Then, as is apparent from
Further, in order to ascertain the reason for the reduction in defective adhesion realized by setting the bias voltage in the manner mentioned above (setting a fixed bias voltage within a range of 0V to −30 V) at the deposition of the intermediate layer 6, the present inventors carried out an investigation of the cross section of a DLC delamination site with respect to the carbon-thin-film coated body 7 that was determined to be defective by the above-mentioned inspection, and measurement of the hardness of the intermediate layer 6 with respect to pieces of the carbon-thin-film coated body 7 obtained by setting the bias voltage to −150 V and 0V. The results of the cross section investigation revealed that as shown in
The results shown in
While in this embodiment the bias voltage applied to the substrate 5 is a fixed voltage within a range of 0 V to −30 V, the present invention is not limited to this. The bias voltage may be varied as long as it falls within a range of 0 V to −30 V.
While example embodiments of the invention have been described above, it is to be understood that the invention is not limited to details of the described embodiments, but may be embodied with various changes, modifications or improvements, which may occur to those skilled in the art, without departing from the scope of the invention.
Number | Date | Country | Kind |
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2007-195063 | Jul 2007 | JP | national |