IEEE Electron Device Letter, vol. EDL-4, No. 7, Jul. 1983, "Super-Gain Silicon MIS Heterojunction Emitter Transistors" by Green et al., pp. 225-227. |
J. C. Bean, et al., "Ge.sub.x Si.sub.1-x /Si strained-layer superlattice grown by molecular beam epitaxy" J. Vac. Sci. Technology, A, V. 2, #2, pp. 436-440, Apr.-Jun. 1984. |
R. People, et al., "Band alignments of coherently strained Ge.sub.x Si.sub.1-x /Si heterostructures on <001>Ge.sub.y Si.sub.1-y substrates" Appl. Phys. Lett., V. 48, No. 8, p. 538540, Feb. 1986. |
S. C. Jain, et al., "Structure, properties and applications of Ge.sub.x Si.sub.1-x stained layers and superlattices" Semiconductor Science Technology, V. 6, pp. 547-576, 1991. |