Claims
- 1. A process for polymerizing one or more .alpha.-olefins or a mixture of one of more .alpha.-olefins and one or more polymerizable ethylenically unsaturated monomers which process comprises conducting the polymerization under solution conditions in the presence of
- (I) a supported catalyst which comprises the product resulting from mixing in a suitable inert diluent
- (A) at least one inorganic support;
- (B) at least one metal-containing reducing agent; and
- (C) as a transition metal component, at least one transition metal compound comprising a titanium tetrakis(dialkylamide) or titanium tetrakis(diarylamide) or a combination thereof;
- wherein in the preparation of the catalyst, all of components (A) and (B) are added prior to the addition of component (C); and
- (II) a cocatalyst or activator compound; wherein the components are employed in quantities which provide an atomic ratio of Ms:Tm of from about 2:1 to about 160:1; an atomic ratio of Mc:Tm of from about 1:1 to about 64:1; an atomic ratio of Mr:Tm of from about 1:1 to about 64:1; and wherein Ms represents the metal atoms in the support material, Mc represents the metal atoms in the cocatalyst or activator compound, Mr represents the metal atoms in the reducing agent and Tm represents the sum of the transition metal atoms in the transition metal component.
- 2. A process of claim 1 wherein the components are employed in quantities which provide an atomic ratio of Ms:Tm of from about 8:1 to about 40:1; an atomic ratio of Mc:Tm of from about 2:1 to about 32:1; and an atomic ratio of Mr:Tm of from about 2:1 to about 32:1.
- 3. A process of claim 2 wherein the components are employed in quantities which provide an atomic ratio of Ms:Tm of from about 11:1 to about 40:1; an atomic ratio of Mc:Tm of from about 4:1 to about 16:1; and an atomic ratio of Mr:Tm of from about 4:1 to about 16:1.
- 4. A process of claim 1, 2, or 3 wherein
- (a) component (A) is a magnesium dihalide;
- (b) component (B) is a compound represented by the formulas Al(R').sub.3-m X.sub.m and B(R').sub.3-m X.sub.m wherein each R' is independently hydrogen or a hydrocarbyl group having from 1 to about 20 carbon atoms; X is a halogen; and m has a value of 1 to 2;
- (c) component (C) is a compound represented by the formula Ti(NR.sub.2).sub.4 wherein each R is independently an alkyl group having from 1 to about 4 carbon atoms, a benzyl group, an alkyl substituted benzyl group wherein each alkyl group has from 1 to about 4 carbon atoms, a phenyl group, or an alkyl substituted aryl group having from about 7 to 20 carbon atoms, wherein the alkyl groups have from 1 to about 4 carbon atoms; and
- (d) said activator or cocatalyst is a compound represented by the formulas Al(R').sub.3-a X.sub.a, B(R').sub.3-a X.sub.a, MgR'.sub.2, ZnR'.sub.2 or combinations thereof wherein each R' is independently hydrogen or a hydrocarbyl group having from 1 to about 20 carbon atoms; X is a halogen; and a has a value from zero to 1.
- 5. A process of claim 4 wherein
- (a) component (A) is magnesium dichloride;
- (b) component (B) is ethylaluminum dichloride, diethylaluminum chloride, ethylaluminum sesquichloride, triethylboron, diethylboron chloride, diethylaluminum bromide, diethylaluminum dibromide, triethylaluminum, trimethylaluminum, triisobutylaluminum, lithium aluminum hydride, potassium hydride, sodium hydride, methyllithium or butyllithium or any combination thereof;
- (c) component (C) is titanium tetrakis(dimethylamide), titanium tetrakis(diethylamide), titanium tetrakis(di-i-propylamide), titanium tetrakis(di-n-propylamide), titanium tetrakis(di-i-butylamide), titanium tetrakis(di-n-butylamide), titanium tetrakis(diphenylamide), titanium bis(diethylamide) bis(dimethylamide) or i-propylamide titanium tris(dimethylamide), or any combination thereof; and
- (d) said cocatalyst or activator is diethylaluminum chloride, trimethylaluminum, tri-i-propylaluminum, tri-i-butylaluminum, triethylaluminum or any combination thereof.
- 6. A process of claim 1, 2 or 3 wherein the transition metal component, (C), additionally contains at least one zirconium or hafnium compound selected from a zirconium tetrakis(dialkylamide), a zirconium tetrakis(diarylamide), a hafnium tetrakis(dialkylamide), a hafnium tetrakis(diarylamide), or any combination thereof; wherein the atomic ratio of (Zr+Hf) to (Ti+Zr+Hf) is from about >0:1 to about 0.9:1.
- 7. A process of claim 6 wherein
- (a) the zirconium compound is represented by the formula Zr(NR.sub.2).sub.4 wherein each R is independently an alkyl group having from 1 to about 4 carbon atoms, a benzyl group, an alkyl substituted benzyl group wherein each alkyl group has from 1 to about 4 carbon atoms, a phenyl group, or an alkyl substituted aryl group having from about 7 to 20 carbon atoms, wherein the alkyl groups have from 1 to about 4 carbon atoms;
- (b) the hafnium compound is represented by the formula Hf(NR.sub.2).sub.4 wherein each R is independently an alkyl group having from 1 to about 4 carbon atoms, a benzyl group, an alkyl substituted benzyl group wherein each alkyl group has from 1 to about 4 carbon atoms, a phenyl group, or an alkyl substituted aryl group having from about 7 to 20 carbon atoms, wherein the alkyl groups have from 1 to about 4 carbon atoms; and
- (c) the atomic ratio of (Zr+Hf) to (Ti+Zr+Hf) is from about >0:1 to about 0.8:1.
- 8. A process of claim 7 wherein
- (a) the zirconium compound is zirconium tetrakis(dimethylamide), zirconium tetrakis(diethylamide), zirconium tetrakis(di-i-propylamide), zirconium tetrakis(di-n-propylamide), zirconium tetrakis(di-i-butylamide), zirconium tetrakis(di-n-butylamide), zirconium tetrakis(diphenylamide), zirconium bis(diethylamide) bis(dimethylamide) or i-propylamide zirconium tris(dimethylamide), or any combination thereof;
- (b) the hafnium compound is hafnium tetrakis(dimethylamide), hafnium tetrakis(diethylamide), hafnium tetrakis(di-i-propylamide), hafnium tetrakis(di-n-propylamide), hafnium tetrakis(di-i-butylamide), hafnium tetrakis(di-n-butylamide), hafnium tetrakis(diphenylamide), hafnium bis(diethylamide) bis(dimethylamide) or i-propylamide hafnium tris(dimethylamide), or any combination thereof; and
- (c) the atomic ratio of (Zr+Hf) to (Ti+Zr+Hf) is from about >0:1 to about 0.7:1.
- 9. A process of claim 4 wherein the transition metal component, (C), additionally contains at least one zirconium or hafnium compound selected from a zirconium tetrakis(dialkylamide), a zirconium tetrakis(diarylamide), a hafnium tetrakis(dialkylamide), a hafnium tetrakis(diarylamide), or any combination thereof; wherein the atomic ratio of (Zr+Hf) to (Ti+Zr+Hf) is from about >0:1 to about 0.9:1.
- 10. A process of claim 9 wherein
- (a) the zirconium compound is represented by the formula Zr(NR.sub.2).sub.4 wherein each R is independently an alkyl group having from 1 to about 4 carbon atoms, a benzyl group, an alkyl substituted benzyl group wherein each alkyl group has from 1 to about 4 carbon atoms, a phenyl group, or an alkyl substituted aryl group having from about 7 to 20 carbon atoms, wherein the alkyl groups have from 1 to about 4 carbon atoms;
- (b) the hafnium compound is represented by the formula Hf(NR.sub.2).sub.4 wherein each R is independently an alkyl group having from 1 to about 4 carbon atoms, a benzyl group, an alkyl substituted benzyl group wherein each alkyl group has from 1 to about 4 carbon atoms, a phenyl group, or an alkyl substituted aryl group having from about 7 to 20 carbon atoms, wherein the alkyl groups have from 1 to about 4 carbon atoms; and
- (c) the atomic ratio of (Zr+Hf) to (Ti+Zr+Hf) is from about >0:1 to about 0.8:1.
- 11. A process of claim 10 wherein
- (a) the zirconium compound is zirconium tetrakis(dimethylamide), zirconium tetrakis(diethylamide), zirconium tetrakis(di-i-propylamide), zirconium tetrakis(di-n-propylamide), zirconium tetrakis(di-i-butylamide), zirconium tetrakis(di-n-butylamide), zirconium tetrakis(diphenylamide), zirconium bis(diethylamide) bis(dimethylamide) or i-propylamide zirconium tris(dimethylamide), or any combination thereof;
- (b) the hafnium compound is hafnium tetrakis(dimethylamide), hafnium tetrakis(diethylamide), hafnium tetrakis(di-i-propylamide), hafnium tetrakis(di-n-propylamide), hafnium tetrakis(di-i-butylamide), hafnium tetrakis(di-n-butylamide), hafnium tetrakis(diphenylamide), hafnium bis(diethylamide) bis(dimethylamide) or i-propylamide hafnium tris(dimethylamide), or any combination thereof; and
- (c) the atomic ratio of (Zr+Hf) to (Ti+Zr+Hf) is from about >0:1 to about 0.7:1.
- 12. A process of claim 5 wherein the transition metal component, (C), additionally contains at least one zirconium or hafnium compound selected from a zirconium tetrakis(dialkylamide), a zirconium tetrakis(diarylamide), a hafnium tetrakis(dialkylamide), a hafnium tetrakis(diarylamide), or any combination thereof; wherein the atomic ratio of (Zr+Hf) to (Ti+Zr+Hf) is from about >0:1 to about 0.9:1.
- 13. A process of claim 12 wherein
- (a) the zirconium compound is represented by the formula Zr(NR.sub.2).sub.4 wherein each R is independently an alkyl group having from 1 to about 4 carbon atoms, a benzyl group, an alkyl substituted benzyl group wherein each alkyl group has from 1 to about 4 carbon atoms, a phenyl group, or an alkyl substituted aryl group having from about 7 to 20 carbon atoms, wherein the alkyl groups have from 1 to about 4 carbon atoms;
- (b) the hafnium compound is represented by the formula Hf(NR.sub.2).sub.4 wherein each R is independently an alkyl group having from 1 to about 4 carbon atoms, a benzyl group, an alkyl substituted benzyl group wherein each alkyl group has from 1 to about 4 carbon atoms, a phenyl group, or an alkyl substituted aryl group having from about 7 to 20 carbon atoms, wherein the alkyl groups have from 1 to about 4 carbon atoms; and
- (c) the atomic ratio of (Zr+Hf) to (Ti+Zr+Hf) is from about >0:1 to about 0.8:1.
- 14. A process of claim 13 wherein
- (a) the zirconium compound is zirconium tetrakis(dimethylamide), zirconium tetrakis(diethylamide), zirconium tetrakis(di-i-propylamide), zirconium tetrakis(di-n-propylamide), zirconium tetrakis(di-i-butylamide), zirconium tetrakis(di-n-butylamide), zirconium tetrakis(diphenylamide), zirconium bis(diethylamide) bis(dimethylamide) or i-propylamide zirconium tris(dimethylamide), or any combination thereof;
- (b) the hafnium compound is hafnium tetrakis(dimethylamide), hafnium tetrakis(diethylamide), hafnium tetrakis(di-i-propylamide), hafnium tetrakis(di-n-propylamide), hafnium tetrakis(di-i-butylamide), hafnium tetrakis(di-n-butylamide), hafnium tetrakis(diphenylamide), hafnium bis(diethylamide) bis(dimethylamide) or i-propylamide hafnium tris(dimethylamide), or any combination thereof; and
- (c) the atomic ratio of (Zr+Hf) to (Ti+Zr+Hf) is from about >0:1 to about 0.7:1.
- 15. A process of claim 1, 2, or 3 wherein ethylene or a mixture of ethylene and at least one .alpha.-olefin having from 3 to about 10 carbon atoms is polymerized.
- 16. A process of claim 15 wherein ethylene or a mixture of ethylene and at least one .alpha.-olefin selected from the group consisting of propylene, butene-1, pentene-1, 3-methylbutene-1, 4-methylpentene-1, hexene-1, and octene-1 is polymerized.
- 17. A process of claim 4 wherein ethylene or a mixture of ethylene and at least one .alpha.-olefin having from 3 to about 10 carbon atoms is polymerized.
- 18. A process of claim 17 wherein ethylene or a mixture of ethylene and at least one .alpha.-olefin selected from the group consisting of propylene, butene-1, pentene-1, 3-methylbutene-1, 4-methylpentene-1, hexene-1 and octene-1 is polymerized.
- 19. A process of claim 5 wherein ethylene or a mixture of ethylene and at least one .alpha.-olefin having from 3 to about 10 carbon atoms is polymerized.
- 20. A process of claim 19 wherein ethylene or a mixture of ethylene and at least one .alpha.-olefin selected from the group consisting of propylene, butene-1, pentene-1, 3-methylbutene-1, 4-methylpentene-1, hexene-1, and octene-1 is polymerized.
- 21. A process of claim 6 wherein ethylene or a mixture of ethylene and at least one .alpha.-olefin having from 3 to about 10 carbon atoms is polymerized.
- 22. A process of claim 21 wherein ethylene or a mixture of ethylene and at least one .alpha.-olefin selected from the group consisting of propylene, butene-1, pentene-1, 3-methylbutene-1, 4-methylpentene-1, hexene-1 and octene-1 is polymerized.
- 23. A process of claim 7 wherein ethylene or a mixture of ethylene and at least one .alpha.-olefin having from 3 to about 10 carbon atoms is polymerized.
- 24. A process of claim 23 wherein ethylene or a mixture of ethylene and at least one .alpha.-olefin selected from the group consisting of propylene, butene-1, pentene-1, 3-methylbutene-1, 4-methylpentene-1, hexene-1, and octene-1 is polymerized.
- 25. A process of claim 8 wherein ethylene or a mixture of ethylene and at least one .alpha.-olefin having from 3 to about 10 carbon atoms is polymerized.
- 26. A process of claim 25 wherein ethylene or a mixture of ethylene and at least one .alpha.-olefin selected from the group consisting of propylene, butene-1, pentene-1, 3-methylbutene-1, 4-methylpentene-1, hexene-1 and octene-1 is polymerized.
- 27. A process of claim 9 wherein ethylene or a mixture of ethylene and at least one .alpha.-olefin having from 3 to about 10 carbon atoms is polymerized.
- 28. A process of claim 27 wherein ethylene or a mixture of ethylene and at least one .alpha.-olefin selected from the group consisting of propylene, butene-1, pentene-1, 3-methylbutene-1, 4-methylpentene-1, hexene-1, and octene-1 is polymerized.
- 29. A process of claim 10 wherein ethylene or a mixture of ethylene and at least one .alpha.-olefin having from 3 to about 10 carbon atoms is polymerized.
- 30. A process of claim 29 wherein ethylene or a mixture of ethylene and at least one .alpha.-olefin selected from the group consisting of propylene, butene-1, pentene-1, 3-methylbutene-1, 4-methylpentene-1, hexene-1 and octene-1 is polymerized.
- 31. A process of claim 11 wherein ethylene or a mixture of ethylene and at least one .alpha.-olefin having from 3 to about 10 carbon atoms is polymerized.
- 32. A process of claim 31 wherein ethylene or a mixture of ethylene and at least one .alpha.-olefin selected from the group consisting of propylene, butene-1, pentene-1, 3-methylbutene-1, 4-methylpentene-1, hexene-1, and octene-1 is polymerized.
- 33. A process of claim 12 wherein ethylene or a mixture of ethylene and at least one .alpha.-olefin having from 3 to about 10 carbon atoms is polymerized.
- 34. A process of claim 33 wherein ethylene or a mixture of ethylene and at least one .alpha.-olefin selected from the group consisting of propylene, butene-1, pentene-1, 3-methylbutene-1, 4-methylpentene-1, hexene-1 and octene-1 is polymerized.
- 35. A process of claim 13 wherein ethylene or a mixture of ethylene and at least one .alpha.-olefin having from 3 to about 10 carbon atoms is polymerized.
- 36. A process of claim 35 wherein ethylene or a mixture of ethylene and at least one .alpha.-olefin selected from the group consisting of propylene, butene-1, pentene-1, 3-methylbutene-1, 4-methylpentene-1, hexene-1, and octene-1 is polymerized.
- 37. A process of claim 14 wherein ethylene or a mixture of ethylene and at least one .alpha.-olefin having from 3 to about 10 carbon atoms is polymerized.
- 38. A process of claim 37 wherein ethylene or a mixture of ethylene and at least one .alpha.-olefin selected from the group consisting of propylene, butene-1, pentene-1, 3-methylbutene-1, 4-methylpentene-1, hexene-1 and octene-1 is polymerized.
CROSS-REFERENCE TO RELATED APPLICATION
This is a continuation-in-part of application Ser. No. 236,691 filed Aug. 25, 1988 (now abandoned) which is a continuation-in-part of application Ser. No. 126,331, filed Nov. 30, 1987 (now abandoned), both of which are incorporated herein by reference in their entirety.
US Referenced Citations (4)
Continuation in Parts (2)
|
Number |
Date |
Country |
Parent |
236691 |
Aug 1983 |
|
Parent |
126331 |
Nov 1987 |
|