Claims
- 1. A method of manufacturing an oxide cathode in which a layer of potentially electron-emissive material is provided on a metal support base, characterized in that the support base has a thickness of about 20 to 150 .mu.m, the method comprising:
- subjecting the support base to a recrystallization thermal treatment comprising heating the support base in a dry hydrogen atmosphere at a temperature ranging between 850.degree. and 1100.degree. C. under conditions that cause the metal crystallites in said support base to grow to a maximum size which does not permit further crystallite growth or recrystallization; and after said recrystallization thermal treatment, providing said layer of potentially electron-emissive material on said support base.
- 2. A method as claimed in claim 1, characterized in that the recrystallization thermal treatment is effective to prevent additions in the metal of the support base from forming oxides to a depth which is further than 1 micrometer from the surface.
- 3. A method of manufacturing an oxide cathode in which a layer of potentially electron-emissive material is provided on a metal support base, the method comprising:
- initially subjecting said support base to a thermal treatment in an oxygen-containing atmosphere at a temperature within the range of 300.degree. to 450.degree. C.;
- then subjecting said support base to a recrystallization thermal treatment of heating the support base in a dry hydrogen atmosphere at a temperature ranging between 850.degree. C. and 1100.degree. C. under conditions that cause the metal crystallites contained in said support body to grow to a maximum size which does not permit further crystallite growth or recrystallization; and
- after said recrystallization thermal treatment, providing said layer of potentially electron-emissive material on said support base.
- 4. A method as claimed in claim 3 wherein the support base comprises nickel.
- 5. A method of manufacturing an oxide cathode comprising a metal support body coated with a layer of potentially electron-emissive material, the support body having a thickness between 20 and 150 .mu.m which method comprises the steps of:
- (a) providing a cathode shaft;
- (b) providing a support body;
- (c) subjecting the support body to a thermal treatment wherein the support body is heated to a temperature of about 300.degree. C. to about 450.degree. C.; and
- (d) subsequently subjecting the support body to a recrystallization thermal treatment wherein the support body is heated to a temperature of about 850.degree. to about 1100.degree. C. in a dry hydrogen atmosphere to cause metal crystallites contained in said support body to grow to a maximum size which does not permit further crystallite growth or recrystallization.
- 6. A method as claimed in claim 5 wherein step (c) is conducted in an oxygen-containing atmosphere.
- 7. A method as claimed in claim 5 wherein step (d) is conducted in a dry hydrogen atmosphere, the dew point of such atmosphere being about -60.degree. C.
- 8. A method as claimed in claim 5 wherein the crystallites of the support body have a size which corresponds to the thickness of the support base.
- 9. A method as claimed in claim 5 wherein the support body comprises nickel.
- 10. A method as claimed in claim 5 wherein a layer of potentially electron-emissive material is provided on the support body subsequent to step (d).
- 11. A method as claimed in claim 5 comprising the additional steps of:
- (e) securing the cathode shaft and the support body to each other; and
- (f) providing a layer of potentially electron-emissive material on the support body.
Priority Claims (1)
Number |
Date |
Country |
Kind |
8900806 |
Apr 1989 |
NLX |
|
Parent Case Info
This is a continuation of application Ser. No. 647,387, filed Jan. 29, 1991 and now abandoned which is a division of application Ser. No. 503,333 filed Mar. 30, 1990, now U.S. Pat. No. 5,030,879 issued Jul. 9, 1991.
US Referenced Citations (4)
Foreign Referenced Citations (3)
Number |
Date |
Country |
204477 |
Dec 1986 |
EPX |
59-149622 |
Aug 1984 |
JPX |
1076229 |
Jul 1967 |
GBX |
Divisions (1)
|
Number |
Date |
Country |
Parent |
503333 |
Mar 1990 |
|
Continuations (1)
|
Number |
Date |
Country |
Parent |
647387 |
Jan 1991 |
|