The disclosure relates to a cathode layer and a membrane electrode assembly (MEA) of a solid oxide fuel cell.
A solid oxide fuel cell (SOFC) is a fuel cell that uses solid ceramic materials as an electrolyte. The entire system of the solid oxide fuel cell operates at a temperature between 500° C. and 1,000° C., and it belongs to a high temperature fuel cell. Therefore, the solid oxide fuel cell has excellent fuel flexibility. Selectable fuels include methane, natural gas, city gas, biomass, diesel and other hydrocarbons.
However, in the membrane electrode assembly of the fuel cell, since the solid electrolyte differs greatly from the electrodes (i.e., cathode layer and the anode layer) in terms of thermal expansion coefficient (CTE), the solid electrolyte and the electrodes are easily destroyed and cracked due to the cyclic thermal stress, resulting in an operation failure of the solid oxide fuel cell.
The cathode layer of the solid oxide fuel cell of the present disclosure consists of a plurality of perovskite crystal films, and the average change rate of linear thermal expansion coefficients of the perovskite crystal films along the thickness direction is about 5% to 40%.
The membrane electrode assembly of the solid oxide fuel cell of the present disclosure includes a cathode layer, an anode layer and a solid electrolyte layer disposed between the cathode layer and the anode layer, wherein the cathode layer consists of the above-mentioned perovskite crystal films, and the linear thermal expansion coefficients of the perovskite crystal films in the cathode layer are reduced towards the solid electrolyte layer.
Various exemplary embodiments accompanied with figures are described in detail below to further describe the disclosure in details.
The accompanying drawings are included to provide further understanding, and are incorporated in and a part of this specification. The drawings are exemplary embodiments and together with the description, serve to explain the principles of the disclosure.
In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the disclosed embodiments. It will be apparent, however, that one or more embodiments may be practiced without these specific details. In other instances, well-known structures and devices are schematically shown in order to simplify the drawing.
Referring to
In the first embodiment, the perovskite crystal film 102b is in contact with the solid electrolyte layer 104, and the perovskite crystal film 102a is not in contact with the solid electrolyte layer 104, so the linear thermal expansion coefficient of the perovskite crystal film 102b is smaller than the linear thermal expansion coefficient of the perovskite crystal film 102a. For example, the linear thermal expansion coefficient of the uppermost layer (e.g., perovskite crystal film 102a) along the thickness direction is, for example, 1.2×10−5/K to 2×10−5/K, or 1.8×10−5/K to 2×10−5/K, and the linear thermal expansion coefficient of the lowermost layer (e.g., perovskite crystal film 102b) along the thickness direction is, for example, 9×10−6/K to 1.5×10−5/K, or 1.2×10−5/K to 1.5×10−5/K, but the disclosure is not limited thereto.
Referring to
The average change rate of the linear thermal expansion coefficients of the perovskite crystal films 202a-c along the thickness direction and the material selection can refer to the first embodiment, wherein the linear thermal expansion coefficient of the uppermost layer (e.g., perovskite crystal film 202a) along the thickness direction is, for example, 1.2×10−5/K to 2×10−5/K, or 1.8×10−5/K to 2×10−5/K, and the lowermost layer (e.g., perovskite crystal film 202c) along the thickness direction is, for example, 9×10−6/K to 1.5×10−5/K, or 1.2×10−5/K to 1.4×0−5/K. In the second embodiment, the perovskite crystal film 202c is in contact with the solid electrolyte layer 104, the perovskite crystal films 202b and 202a are not in contact with the solid electrolyte layer 104, and the perovskite crystal films 202b are located between the perovskite crystal films 202a and 202c, so the linear thermal expansion coefficient of the perovskite crystal film 202c is smaller than the linear thermal expansion coefficient of the perovskite crystal film 202b, and the linear thermal expansion coefficient of the perovskite crystal film 202b is smaller than the linear thermal expansion coefficient of the perovskite crystal film 202a. For example, the linear thermal expansion coefficients of two adjacent layers in the perovskite crystal films 202a-c differ by 2×10−6/K to 5×10−6/K, but the present disclosure is not limited thereto.
Referring to
The average change rate of the linear thermal expansion coefficients of the perovskite crystal films 302a-d along the thickness direction and the material selection can refer to the first embodiment, wherein the linear thermal expansion coefficient of the uppermost layer (e.g., perovskite crystal film 302a) along the thickness direction is, for example, 1.2×10−5/K to 2×10−5/K, or 1.8×10−5/K to 2×10−5/K, and the linear thermal expansion coefficient of the lowermost layer (e.g., perovskite crystal film 302d) along the thickness direction is, for example, 9×10−6/K to 1.5×10−5/K, or 9×10−6/K to 1.3×10−5/K. In the third embodiment, the perovskite crystal film 302d is in contact with the solid electrolyte layer 104, the perovskite crystal films 302a-c are not in contact with the solid electrolyte layer 104, the perovskite crystal film 302c is located between perovskite crystal films 302b and 302d, and the perovskite crystal films 302b is located between the perovskite crystal films 302a and 302c, so the linear thermal expansion coefficient of the perovskite crystal film 302d is smaller than the linear thermal expansion coefficient of the perovskite crystal film 302c, the linear thermal expansion coefficient of the perovskite crystal film 302c is smaller than the linear thermal expansion coefficient of the perovskite crystal film 302b, and the linear thermal expansion coefficient of the perovskite crystal film 302b is smaller than the linear thermal expansion coefficient of the perovskite crystal film 302a. For example, the linear thermal expansion coefficients of two adjacent layers in the perovskite crystal films 302a-d differ by 1×10−6/K to 4.5×10−6/K, but the present disclosure is not limited thereto.
Referring to
The experiments are enumerated below to verify the efficacy of the present disclosure, but the present disclosure is not limited to the following.
The disclosure utilized a pulse laser deposition method (PLD) to quickly prepare samples with desired characteristics. Perovskite crystal films with different compositions were deposited on a YSZ substrate, and the steps were as follows.
First, a silver glue was coated on the test piece holder and the YSZ substrate (with a linear thermal expansion coefficient of 9.9×10−6/K) was placed on top of the test piece holder. The silver glue was completely solidified after the sample was gently pressed and heated, and the sample was then placed in a PLD chamber. Next, the oxygen pressure in the chamber, the laser focal length and the substrate temperature were adjusted to the required conditions, such as a pressure of 80 mTorr to 100 mTorr and a temperature of about 600° C. to 700° C.
Next, according to the number of layers and the corresponding perovskite crystal film materials in Table 1 below, the targets were irradiated by a high-energy laser (double-target experiments: LaCoO3, LaFeO3, SrCoO2.5, SrFeO3), and the compositions of the films were adjusted by controlling the number of shots irradiated on different targets. The first layer is defined as the layer closest to the YSZ substrate, the second layer is defined as the layer on the first layer, and so on. In addition, each layer of the perovskite crystal films of the present disclosure can also be formed by screen printing, and is not limited to the experimental steps.
The prepared samples were taken out for the following analysis.
<Variable Temperature X-Ray Diffraction>
The crystal structure of each sample was analyzed by X-ray diffraction. During the measurement process, a Cu-Kα radiation with a wavelength of 0.154 nm was used, the scanning angle (20) was set from 30° to 32°, the scanning speed was set about 0.03°/sec, and the sample was measured at room temperature, 100° C., 200° C., 300° C., 400° C. and 500° C. (each temperature was maintained for 5 to 10 minutes before the measurement to bring the sample to thermal equilibrium). The change of the pitch of crystal planes can be inferred through the 2θ changes under different temperatures, so as to calculate the linear thermal expansion coefficient of each material. The results are reported in Table 1 below.
As shown in Table 1, the CTE difference ΔCTE of the single-layer cathode structure (Preparation Example 6) reaches 47.6%, based on the first layer of perovskite crystal films and the solid electrolyte layer (YSZ substrate). However, the CTE difference ΔCTE of the four-layer gradient cathode structure (Preparation Example 5) can be reduced to <22%, based on the first layer of perovskite crystal films and the solid electrolyte layer (YSZ substrate).
Moreover, the change rate of the linear thermal expansion coefficients of the two-layer perovskite crystal films of Preparation Example 1 is 21.2% along the direction away from the solid electrolyte layer (thickness direction), and the change rate of the first layer of perovskite crystal films and the electrolyte layer is 33.6%. The change rate of the linear thermal expansion coefficients of the two-layer perovskite crystal films of Preparation Example 2 is 33.9% along the direction away from the solid electrolyte layer (thickness direction), and the change rate of the first layer of perovskite crystal films and the electrolyte layer is 20.8%. The average change rate of the linear thermal expansion coefficients of the three-layer perovskite crystal films of Preparation Example 3 is 18.6% along the direction away from the solid electrolyte layer (thickness direction), and the change rate of the first layer of perovskite crystal films and the electrolyte layer is 20.8%. The average change rate of the linear thermal expansion coefficients of four-layer perovskite crystal films of Preparation Example 4 is 12.8% along the direction away from the solid electrolyte layer (thickness direction), and the change rate of the first layer of perovskite crystal films and the electrolyte layer is 20.8%. The average change rate of the linear thermal expansion coefficients of the four-layer perovskite crystal films of Preparation Example 5 is 19.3% along the direction away from the solid electrolyte layer (thickness direction), and the change rate of the first layer of perovskite crystal films and the electrolyte layer is 0.2%.
Two-layer perovskite crystal films of Table 2 below were prepared on a YSZ substrate in the same manner as in Preparation Example 1, and the double targets used in Preparation Examples 7-8 were “LaMnO3 and SrMnO3” and “LaFeO3 and SrFeO3”, respectively. The linear thermal expansion coefficient of each material was then calculated using the same analytical method as in Preparation Example 1. The results are reported in Table 2 below.
As show in Table 2, the change rate of the linear thermal expansion coefficients of the two-layer perovskite crystal films of Preparation Example 7 is 7.9% along the direction away from the solid electrolyte layer (thickness direction), and the change rate of the first layer of perovskite crystal films and the electrolyte layer is 14.7%. The change rate of the linear thermal expansion coefficients of the two-layer perovskite crystal films of Preparation Example 8 is 35.8% along the direction away from the solid electrolyte layer (thickness direction), and the change rate of the first layer of perovskite crystal films and the electrolyte layer is 18.9%.
The samples of Preparation Examples 1-5 and 7-8 were subjected to a thermal cycling from room temperature to 800° C. After five cycles of the thermal cycling, the resistance change rate of the membrane electrode assembly for each cycle is shown in
The sample of Preparation Example 6 was subjected to the above five thermal cycling test. The resistance change rate of the membrane electrode assembly for each cycle is shown in
As shown in
In summary, the cathode layer of the present disclosure consists of a plurality of perovskite crystal films with linear thermal expansion coefficients that change in a specific change rate along the thickness direction, so that it has high resistance to thermal shock and can greatly reduce the impact of thermal cycling stress on the performance of the solid oxide fuel cell.
It will be apparent to those skilled in the art that various modifications and variations may be made to the structure of the disclosed embodiments without departing from the scope or spirit of the disclosure. In view of the remaining, it is intended that the disclosure cover modifications and variations of this disclosure provided they fall within the scope of the following claims and their equivalents.
Number | Date | Country | Kind |
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107144783 | Dec 2018 | TW | national |
This application claims the priority benefit of U.S. provisional application Ser. No. 62/622,154, filed on Jan. 26, 2018, and Taiwan application serial no. 107144783, field on Dec. 12, 2018. The entirety of the above-mentioned patent applications are hereby incorporated by reference herein and made a part of this specification.
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Number | Date | Country | |
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20190237769 A1 | Aug 2019 | US |
Number | Date | Country | |
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62622154 | Jan 2018 | US |