Cathode, method for manufacturing the cathode, and picture tube

Information

  • Patent Grant
  • 6351061
  • Patent Number
    6,351,061
  • Date Filed
    Monday, September 21, 1998
    26 years ago
  • Date Issued
    Tuesday, February 26, 2002
    22 years ago
Abstract
A cathode structure comprises a cylindrical metal sleeve having aperture portions at both ends, a base metal having an aperture portion on one end, which is fitted onto one of the aperture portions of the metal sleeve, and an electron-emitting layer, which is formed on a flat portion of an outside surface of the base metal. After an electron-emitting material is sprayed onto the base metal, its surface is mechanically flattened to form the electron-emitting layer. Thus, the planarity of the surface of the electron-emitting layer can be improved without deterioration of the electron emission characteristics and the moiré can be decreased without reduction of the resolution.
Description




FIELD OF THE INVENTION




The present invention relates to a cathode for use in a picture tube, a manufacturing method therefor, and to a picture tube using the cathode.




BACKGROUND OF THE INVENTION




Conventional cathodes for color picture tubes are often oxide cathodes of a base metal coated with an oxide of an alkali earth metal such as barium, strontium, or calcium serving as the electron-emitting material. Methods frequently used for coating the base metal with the electron-emitting material include spraying a suspension of the electron-emitting material in a binder such as nitrocellulose or ethylcellulose onto the base metal.





FIG. 11

is a schematic view of a conventional oxide cathode. As is shown in FIG.


11


(


a


), the cathode structure includes a cylindrical sleeve


1


, a base metal


2


covering one of the aperture portions of the sleeve


1


, and an electron-emitting layer


4


formed on the base metal


2


. Usually, the electron-emitting layer


4


has homogeneous porosity and a suitable density for electron emission. To provide the electron-emitting layer


4


with suitable and homogeneous porosity, it is preferable that the average particle size of the crystal particles in the electron-emitting layer


4


is at least 5 μm. Here, average particle size of the crystal particles in the electron-mitting layer


4


means the average particle size of the electron-emitting crystals solidified from the binder suspension. When the average particle size of the crystal particles is more than 5 μm, the planarity of the surface of the electron-emitting layer


4


(electron-mitting surface) becomes low, as is shown in FIG.


11


(


b


).





FIG. 12

shows an electrical equipotential distribution near the electron-emitting surface and a current-density distribution of the electrons emitted from the electron-emitting surface, when the planarity of the electron-emitting surface is low. Numeral


7


in

FIG. 12

indicates a control electrode, and numeral


8


indicates an acceleration electrode. When the electron-emitting surface of the electron-emitting layer


4


has a low planarity and many irregularities, the electrical equipotential distribution


5


that causes the electron emission and is formed in front of the electron-emitting surface warps, and so does the current density distribution


6


of the electrons emitted from the electron-emitting surface, as is shown in FIG.


12


.




When the current density distribution


6


of the electrons emitted from the electron-mitting surface warps, distortions in the brightness distribution of the electron beam spot formed on the fluorescent screen of the picture tube may occur. It is well-known that these distortions in the brightness distribution of the electron beam may result in moiré caused by the interference of the phosphorous dot arrangement and the scanning beam.




A picture tube cathode with improved planarity of the electron-emitting surface is known from Publication of Unexamined Japanese Patent Application No. Hei 5-74324. This cathode is explained with reference to FIG.


13


. As is illustrated in FIGS.


13


(


a


) and


13


(


b


), an electron-mitting layer


9


is divided into two layers, namely a lower layer


10


adhering to the base metal


2


and an upper layer


11


formed on top of the lower layer


10


. The average particle size of the electron-mitting material of the upper layer


11


is smaller than the average particle size of the electron-emitting material of the lower layer


10


. By selecting an average particle size of 5 to 20 μm (for example 10 μm), the lower layer


10


can be made porous and a suitable density for electron emission can be realized. Moreover, by selecting an average particle size of less than 5 μm (for example 3 μm), the planarity of the surface of the electron-emitting upper layer


11


is improved.




However, when the electron-emitting layer is formed with this conventional technique, electron-emitting materials of two different particle sizes are necessary. And, when an electron-emitting material of less than 5 μm average particle size is used to form the upper layer of the electron-emitting layer, the porosity of the upper layer surface is lost, and it becomes difficult to attain a desired electron emission.




The present invention has been developed to overcome the problems of the prior art. It is a purpose of the present invention to provide a cathode with improved planarity of the surface of the electron-emitting layer and smooth current density distribution for the electrons emitted from the electron-emitting surface, without deterioration of the electron emission characteristics. It is another purpose of the present invention to provide a method for manufacturing such a cathode, and a picture tube using this cathode.




SUMMARY OF THE INVENTION




In order to achieve these purposes, a cathode in accordance with the present invention comprises a base metal and an electron-emitting layer of electron-mitting material formed on the base metal. A surface of the electron-emitting layer is mechanically flattened after spraying the electron-emitting material onto the base metal. In such a cathode, a porous structure is formed throughout the entire electron-emitting layer, so that a certain electron emission can be attained, the planarity of the electron-emitting surface can be improved, and the current density distribution of the electrons emitted from the electron-emitting surface can be smoothened.




It is preferable that the cathode according to the present invention further comprises an adhesive coating between the base metal and the electron-emitting layer. In this preferable example, a decrease in the adhesive force between the base metal and the electron-emitting layer caused by mechanical flattening (for example by pressing) of the electron-emitting surface can be prevented.




It is preferable that in the cathode according to the present invention, the surface of the electron-emitting layer is flattened only in a region comprising an electron-emitting region. In this preferable example, a decrease in the adhesive force between the base metal and the electron-emitting layer caused by mechanical flattening (for example by pressing) of the electron-mitting surface can be prevented.




It is preferable that the surface roughness of the surface of the electron-emitting layer (maximum height R


y


in JIS B 0601) in the cathode of the present invention is not more than 15 μm. In this preferable example, the current density distribution of the electrons emitted from the electron-emitting surface can be smoothened.




A method for manufacturing a cathode comprising a base metal and an electron-emitting layer of electron-emitting material formed on the base metal in accordance with the present invention comprises the steps of spraying the electron-emitting material onto a metal base to form the electron-emitting layer; and mechanically flattening an electron-emitting surface of the electron-emitting layer.




It is preferable that the method for manufacturing a cathode according to the present invention further comprises a step of injecting an adhesive coating between the base metal and the electron-emitting layer, after flattening the electron-emitting surface.




A picture tube in accordance with the present invention comprises a face panel having a phosphorous screen on an inside surface; a funnel connected to the rear of the face panel; an electron gun having a cathode in a neck portion of the funnel, the cathode comprising a base metal and an electron-mitting layer of electron-emitting material formed on the base metal, wherein a surface of the electron-emitting layer is mechanically flattened after spraying the electron-emitting material onto the base metal. As a result, the moiré caused by interference of the phosphorous dot arrangement and the electron scanning beam can be decreased.




It is preferable that the cathode in the picture tube according to the present invention further comprises an adhesive coating between the base metal and the electron-emitting layer.




It is preferable that the surface of the electron-emitting layer in the picture tube of the present invention is flattened only in a region comprising an electron-emitting region.




It is preferable that the surface roughness of the surface of the electron-mitting layer (maximum height R


y


in JIS B 0601) in the picture tube of the present invention is not more than 15 μm.











BRIEF DESCRIPTION OF THE DRAWINGS




FIG.


1


(


a


) is a cross-sectional view showing a cathode according to the first embodiment of the present invention.




FIG.


1


(


b


) shows a magnification of the electron-mitting layer in FIG.


1


(


a


).




FIGS.


2


(


a


)-(


d


) are cross-sectional views illustrating the steps of a method for manufacturing a cathode in accordance with the first embodiment of the present invention.





FIG. 3

is a cross-sectional view illustrating a step of a method for manufacturing a cathode in accordance with the second embodiment of the present invention.




FIGS.


4


(


a


)-(


c


) are cross-sectional views illustrating a method for manufacturing a cathode in accordance with the third embodiment of the present invention.





FIG. 5

is a partially cross-sectional view showing a picture tube in accordance with the fourth embodiment of the present invention.





FIG. 6

is a schematic view showing the electrical equipotential distribution near the electron-mitting layer and the current density distribution of the electrons emitted from the electron-emitting surface in a picture tube according to the fourth embodiment of the present invention.





FIG. 7

is an inverted black-and-white representation of a photograph showing the cathode image of a cathode in accordance with the present invention displayed as a halftone image.





FIG. 8

is inverted black-and-white representation of a photograph showing the cathode image of a conventional cathode displayed as a halftone image.





FIG. 9

illustrates the brightness distribution of an electron beam spot on a phosphorous screen of a picture tube in accordance with the present invention.





FIG. 10

illustrates the brightness distribution of an electron beam spot in a conventional picture tube.




FIG.


11


(


a


) is a cross-sectional view showing,a conventional cathode.




FIG.


11


(


b


) is a magnification of the electron-emitting layer in FIG.


11


(


a


).





FIG. 12

is a schematic view showing an electrical equipotential distribution near the electron-emitting surface and a current-density distribution of the electrons emitted from the electron-emitting surface in a conventional picture tube.




FIG.


13


(


a


) is a cross-sectional view showing another example of a conventional cathode.




FIG.


13


(


b


) is a magnification of the electron-emitting layer in FIG.


13


(


a


).











DESCRIPTION OF THE PREFERRED EMBODIMENTS




The following is a description of the preferred embodiments of the present invention, with reference to the accompanying drawings.




First Embodiment




FIG.


1


(


a


) is a cross-sectional view of a cathode according to a first embodiment of the present invention. FIG.


1


(


b


) is a magnified view of the electron-emitting layer in FIG.


1


(


a


).




As is shown in FIG.


1


(


a


), a cathode structure in accordance with this embodiment of the present invention comprises a cylindrical metal sleeve


1


having aperture portions at both ends, a base metal


2


having an aperture portion on one end, which is fitted onto one of the aperture portions of the metal sleeve


1


, and an electron-emitting layer


3


, which is formed on a flat portion of an outside surface of the base metal


2


. A heater (not shown in the drawing) is inserted in the sleeve


1


.




The main component of the base metal


2


is nickel, and it comprises reducing elements, such as silicon or magnesium. The bottom part of the base metal


2


is substantially flat. A material having alkali earth metal carbonate as a component is used for the electron-emitting material.




The electron-emitting layer


3


of this cathode structure is formed as follows: First, a carbonate powder of, for example, barium, strontium, or calcium is suspended in a binder of, for example, nitrocellulose or ethylcellulose to produce a paste for spraying. This paste for spraying is dispersed into a mist with a spray gun, and applied by spraying on the flat portion of the base metal


2


. To attain favorable electron emission characteristics, the density and the thickness of the electron-emitting layer


3


are optimized by controlling the spray pressure during the spraying, spray duration, and the number of spray applications. To give an example, it is preferable that the average particle size of the electron-emitting carbonate powder is 10 μm, the thickness of the electron-emitting layer


3


is 70 μm, and its density is 0.8 g/cm


3


.




To vaporize the binder after the spraying, the electron-emitting layer


3


is dried for about 5 min at an atmospheric temperature of about 200° C. Thus, a moderate adhesive force works among the particles of the electron-emitting material, and between the electron-emitting layer


3


and the base metal


2


.




The following explains, with reference to

FIG. 2

, how the surface of the electron-mitting layer


3


is mechanically flattened. FIGS.


2


(


a


)-(


d


) are cross-sectional views illustrating the steps of a method for manufacturing a cathode in accordance with the first embodiment of the present invention.




As is shown in FIGS.


2


(


a


)-(


d


), the surface of the dried electron-emitting layer


3


is compacted with a press-die


12


having a smooth surface. To attain an appropriate planarity for the surface of the electron-emitting layer


3


, it is preferable that the surface roughness (maximum height R


y


in JIS B 0601) of the press-die


12


is not more than 2 μm.




As is shown in FIGS.


2


(


b


) and (


c


), the stroke S of the press die


12


when it presses the surface of the electron-emitting layer


3


should be set to a value where the internal density of the electron-emitting layer


3


is not changed and the unevenness of the surface is flattened out. For example, it is preferable that the stroke S is about 10 μm.




The electron-emitting layer


3


formed with this method has a porous structure with suitable crevices over the entire layer, because the average particle size in the electron-emitting layer is selected to be at least 5 μm, as is shown in FIG.


1


(


b


). Moreover, by pressing only a little near the surface of the electron-emitting layer


3


, the surface of the electron-emitting layer


3


is flattened, but still has favorable crevices in its surface.




To obtain a smooth current density distribution of the electrons emitted from the electron-emitting surface of the electron-emitting layer


3


, a favorable level of planarity of the electron-emitting layer


3


is a surface roughness (maximum height R


y


in JIS B 0601) of not more than 15 μm. If the surface roughness (maximum height R


y


in JIS B 0601) is not more than 10 μm, then an even better current density distribution can be attained.




Second Embodiment




When the electron-emitting layer


3


is pressed after drying, as explained for the first embodiment, the adhesive force between the electron-emitting layer


3


and the base metal


2


decreases, and the electron-emitting layer


3


can more easily peel off the base metal


2


.




If, as a counter-measure, a binder, such as nitrocellulose or ethylcellulose, is injected with an injector


13


, such as a syringe, at the face between the electron-emitting layer


3


and the base metal


2


, as shown in

FIG. 3

, after pressing the surface of the electron-emitting layer


3


, and the layer


3


is dried again, then the adhesive force between the electron-emitting layer


3


and the base metal


2


can be maintained.




Third Embodiment




In this embodiment, only a part of the electron-emitting surface comprising an electron-emitting region is flattened, as shown in FIGS.


4


(


a


)-(


c


), to prevent the decrease in the adhesive force between the electron-emitting layer


3


and the base metal


2


, as in the second embodiment.




Here, “electron-emitting region” means the region near the lower portion of the electron beam passage of the control electrode


7


of the electron gun, and is the region where electrons are emitted (prominent portion of the current density distribution


20


), as shown in FIG.


6


.




Because in this embodiment the pressed surface area of the electron-emitting layer


3


is smaller than in the previous embodiments, the force that is applied between the electron-emitting layer


3


and the base metal


2


can be reduced, so that the decrease in the adhesive force between the electron-emitting layer


3


and the base metal is also reduced.




It is preferable that the values for the press stroke S, the surface roughness of the electron-emitting layer


3


after the pressing etc. are the same as in the first embodiment.




Fourth Embodiment





FIG. 5

is a partially cross-sectional view of a picture tube according to a fourth embodiment of the present invention. As is shown in

FIG. 5

, a picture tube according to the present embodiment comprises basically a face panel


14




a


made of glass, a funnel


14




b


made of glass and connected to the rear of the face panel


14




a


, and an electron gun


15


for emitting an electron beam built into a neck portion of the funnel


14




b


. A deflection yoke


16


for deflecting the electron beam emitted from the electron gun


15


is installed on a peripheral surface of the funnel


14




b


. Phosphorous dots are applied to an inner surface of the face panel


14




b


, forming a phosphorous screen


18


. A shadow mask


17


is arranged near the inner surface (phosphorous screen


18


) of the face panel


14




a


and substantially parallel to the phosphorous screen


18


. The cathode in the first to third embodiments is arranged on one end of the electron gun


15


.





FIG. 6

illustrates the electrical equipotential distribution near the electron-emitting surface and the current density distribution of the electrons emitted from the electron-emitting surface in a picture tube according to the present invention. In

FIG. 6

, the numeral


7


indicates a control electrode and numeral


8


an accelerator electrode.




Due to the electric field


19


formed by the so-called triode portion of base metal


2


, control electrode


7


, and acceleration electrode


8


, electrons are emitted from the electron-emitting surface of the electron-emitting layer


3


.




When a cathode structure in accordance with the first to third embodiment is used, the electrons emitted from the surface of the electron-emitting layer


3


will have a smooth current density distribution


20


, as shown in FIG.


6


.




The current density distribution of the electrons emitted from the surface of such an electron-emitting layer


3


can be observed as the brightness distribution of the cathode image.

FIG. 7

illustrates a cathode image of a color picture tube using a cathode structure in accordance with the first to third embodiment.

FIG. 8

illustrates a cathode image of a color picture tube using a conventional cathode structure. Here, “cathode image” means the image projecting the current density distribution of the electrons emitted from the cathode surface onto a phosphorous screen using a cathode lens formed between the cathode and the control electrode


7


, while the main lens function of the electron gun


15


is turned off. As becomes clear from

FIGS. 7 and 8

, the cathode image of a conventional color picture tube has a region with bright speckles in its brightness distribution, whereas the brightness distribution of a cathode image of a color picture tube using a cathode in accordance with the first to third embodiment is smooth.




Moreover, the current density distribution of the electrons emitted from the cathode may be reflected by the electron beam spot formed on the phosphorous screen.

FIG. 9

shows the brightness distribution of an electron beam spot in a color picture tube using a cathode structure in accordance with the first to third embodiment (solid line), and

FIG. 10

shows the brightness distribution of an electron beam spot in a color picture tube using a conventional cathode structure (solid line). The broken line in

FIGS. 9 and 10

is a Gauss approximation at 5% to the relative brightness of the brightness distribution of the electron beam spot.




Whereas distortion occurs in the peak portion of the brightness distribution of an electron beam spot in a color picture tube using a conventional cathode structure, the brightness distribution of the electron beam spot in a color picture tube using a cathode according to the first to third embodiment is smooth, as becomes clear from

FIGS. 9 and 10

.




It is well-known that the contrast of the moiré caused by interference of the phosphorous dot arrangement and the electron scanning beam increases when there are distortions in the electron beam spot. The moiré contrast calculated from the brightness distribution of the electron beam spot in a color picture tube using a cathode structure according to the present invention (

FIG. 9

) was Md=0.008, and using a conventional cathode structure was Md=0.054. Since the critical contrast for visibility for humans is Md=0.009, moiré can practically not be observed when a cathode structure in accordance with the present invention is used.




Conventionally, to reduce the moiré contrast, the electron beam spot width at, for example, 5% relative brightness is enlarged, however, this method brings about a reduction of the image resolution. When the moiré contrast is reduced by improving the brightness distribution of the electron beam spot, as in the present invention, the moiré can be prevented without a reduction of the image resolution.




In the previous embodiments, the electron-mitting material was sprayed onto the base metal


2


, so that its thickness and density were suitable for optimal electron-emitting characteristics. In this case, to prevent an increase of the electron-emitting layer


3


density due to a small reduction of the film thickness when the electron-mitting layer


3


is pressed, the film thickness can be sprayed on just a little too thick, or in other words with just a little too low density, so that the electron-emitting layer


3


has suitable thickness and density after the pressing.




Other methods for mechanically flattening the surface of the electron-emitting layer


3


instead of pressing include for example rolling.




The invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The embodiments disclosed in this application are to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, all changes that come within the meaning and range of equivalency of the claims are intended to be embraced therein.



Claims
  • 1. A cathode comprising a base metal and an electron-emitting layer of electron-emitting material formed on the base metal, wherein at least a portion of a surface of the electron-emitting layer is mechanically flattened by compacting after applying the electron-emitting material onto the base metal and a surface roughness of the surface of the electron-emitting layer having a maximum height Ry in JIS B 0601 is not more than 15 μm.
  • 2. The cathode according to claim 1, further comprising a binder between said base metal and said electron-emitting layer.
  • 3. The cathode according to claim 1, wherein the surface of said electron-emitting layer is flattened by compacting only in a region comprising an electron-emitting region.
  • 4. The cathode of claim 1, wherein the compacting comprises pressing the surface of the electron emitting layer with a press die.
  • 5. A picture tube comprising:a face panel having a phosphorous screen on an inside surface; a funnel connected to the rear of said face panel; an electron gun having a cathode in a neck portion of said funnel, the cathode comprising a base metal and an electron-emitting layer of electron-emitting material formed on said base metal, wherein at least a portion of a surface of said electron-emitting layer is mechanically flattened by compacting after applying the electron-emitting material onto said base metal and a surface roughness of the surface of the electron-emitting layer having a maximum height Ry in JIS B 0601 is not more than 15 μm.
  • 6. The picture tube according to claim 5, wherein the cathode further comprises a binder between said base metal and said electron-emitting layer.
  • 7. The picture tube according to claim 5, wherein the surface of said electron-emitting layer is flattened by compacting only in a region comprising an electron-emitting region.
Priority Claims (1)
Number Date Country Kind
9-279733 Sep 1997 JP
US Referenced Citations (10)
Number Name Date Kind
2878409 Levi Mar 1959 A
3623198 Held Nov 1971 A
3879830 Buescher Apr 1975 A
4400648 Taguchi et al. Aug 1983 A
4478590 Rychlewski Oct 1984 A
4957463 Branovich et al. Sep 1990 A
4980603 Kimura et al. Dec 1990 A
5122707 Nakanishi et al. Jun 1992 A
5808404 Koizumi et al. Sep 1998 A
5982083 Ju et al. Nov 1999 A
Foreign Referenced Citations (12)
Number Date Country
1 098 621 Feb 1961 DE
28 08 134 Aug 1979 DE
0052047 May 1982 EP
0 831 512 Mar 1998 EP
44-10810 May 1969 JP
50-103967 Aug 1975 JP
58-34539 Mar 1983 JP
58-87735 May 1983 JP
5-74324 Mar 1993 JP
6-103885 Apr 1994 JP
6-111711 Apr 1994 JP
7-105835 Apr 1995 JP
Non-Patent Literature Citations (2)
Entry
European Search Report Sep. 28, 1998.
JIS B 0601 (partial English Translation).