Claims
- 1. A cathode structure for electron emission in a miniature X-ray device comprisinga housing; a cathode body within the housing, the cathode body comprising a getter material comprising approximately 82% zirconium, 14.7% vanadium and 3.3% iron; a diamond film on a portion of the cathode body.
- 2. The cathode structure according to claim 1, wherein the body includes a substantially rounded portion.
- 3. The cathode structure according to claim 1, wherein the body includes a substantially rounded portion and a substantially straight portion.
- 4. The cathode structure according to claim 1, wherein an outer diameter of the cathode structure is less than or equal to approximately 1.0 millimeter.
- 5. The cathode structure according to claim 1, wherein an outer diameter of the cathode structure is less than or equal to approximately 0.75 millimeter.
- 6. The cathode structure according to claim 1, wherein an outer diameter of the cathode structure is less than or equal to approximately 0.5 millimeter.
- 7. A method of manufacturing a cathode structure for electron emission in a miniature X-ray device, the method comprising:forming in a minitaure X-ray device a body using a getter material comprising approximately 82% zirconium, 14.7% vanadium and 3.3% iron; and forming a diamond film over at least part of a surface of the body.
- 8. The method according to claim 7, further comprising conditioning the cathode structure.
- 9. The method according to claim 8, wherein conditioning the cathode structure includes supplying a voltage to the cathode structure.
- 10. The method according to claim 9, wherein conditioning the cathode structure further includes increasing the voltage in steps.
- 11. The method according to claim 9, wherein the voltage is substantially equal to an operating voltage of the cathode structure.
- 12. The method according to claim 7, wherein the body is formed with a substantially rounded shape.
- 13. The method according to claim 7, wherein forming the diamond film includes using a laser ion source.
- 14. The method according to claim 7, further comprising activating the getter material.
- 15. The method according to claim 7, wherein the getter material has an activation temperature.
- 16. The method according to claim 15, wherein the diamond film is formed at a temperature less than the activation temperature.
Parent Case Info
This application is a continuation of Ser. No. 09/138,449 filed Aug. 21, 1998 now abandoned.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
5854822 |
Chornenky et al. |
Dec 1998 |
A |
6108402 |
Chornenky |
Aug 2000 |
A |
Continuations (1)
|
Number |
Date |
Country |
Parent |
09/138449 |
Aug 1998 |
US |
Child |
09/748437 |
|
US |