The invention described herein may be manufactured and used by or for the Government of the United States for all governmental purposes without the payment of any royalty.
Number | Name | Date | Kind |
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3914748 | Barton et al. | Oct 1975 | |
4165541 | Varshney et al. | Aug 1979 | |
4206370 | Leach, Jr. | Jun 1980 | |
4225947 | Councill et al. | Sep 1980 | |
4376897 | Byrne et al. | Mar 1983 |
Entry |
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L. M. Terman et al., "CCD Memory Using Multilevel Storage", 1981 IEEE International Solid-State Circuits Conference, Digest of Technical Papers, Feb. 19, 1981, pp. 154-155. |