E. K. Banghart et al., "A Model for Charge Transfer in Buried-Channel Charge-Coupled Devices at Low Temperature", IEEE Transactions on Electron Devices, vol. ED-38, No. 5 (May 1991) pp. 1162-1174. |
S. M. Sze, Physics of Semiconductor Devices, 2nd Ed., John Wiley, New York, 1981, pp. 412-415. |
A. L. Lattes, et al., "Ultrafast Shallow-Buried Channel CCD;s with Built-in Drift Fields", IEEE Electron Device Letters, vol. 12, No. 3 (Mar. 1991) pp. 104-107. |
A. L. Lattes, et al., "Improved Drift in Two-Phase, Long-Channel, Shallow Buried-Channel CCD's with Longitudinally Nonuniform Storage-Gate Implants", IEEE Transactions on Electron Devices, vol. 39, No. 7 (Jul. 1992), pp. 1772-1774. |
Jaroslav Hynecek, "Virtual Phase Technology: A New Approach to Fabrication of Large-Area CCD's", IEEE Transactions On Electron Devices, vol. ED-28, No. 5 (May 1981) pp. 483-489. |
Dollekamp, et al., "P.sup.2 CCD in 60 MHz oscilloscope with digital image storage", Philips Tech. Rev. 40, 1982, No. 2/3 pp. 55-69. |
M. G. Collet and A. C. Vliegenthart, "Calculations on Potential and Charge Distributions In The Peristaltic Charge-Coupled Device", Philips Res. Repts. vol. 29, 1974, pp. 25-44. |
M. Kimata et al., "Low-Temperature Characteristics of Buried-Channel Charge-Coupled Devices", Japanese Journal of Applied Physics, vol. 22, No. 6, Jun. 1983, pp. 975-980. |
Bjorn F. Andersen, et al., "Infrared Technology XVII", Proceedings of SPIE-The International Society for Optical Engineering, vol. 1540, (1991) pp. 580-595. |