Claims
- 1. A charge-coupled device comprising a semiconductor substrate of a first conductivity type and having an implant of the opposite conductivity type at a surface region of said substrate, said device including an electrically-insulating layer on said surface, said device also including a multi-phase electrode structure formed on said insulating layer, said electrode structure comprising a plurality of electrical conductors each comprising a series of H-shaped geometries, each of said H-shaped geometries comprising a horizontal and two vertical elements, like-positioned ones of said vertical elements of adjacent electrical conductors overlapping each other in a manner to generate therebeneath a pattern of potential wells, said pattern moving to a succession of positions beneath said vertical elements for moving charge quanta therealong in response to a multi-phase pulse sequence on said electrical conductors.
- 2. A device as set forth in claim 1 wherein said substrate comprises P-type semiconductor material, said surface implant comprising N-type semiconductor material, and said insulating material comprises silicon dioxide.
- 3. A charge-coupled device as set forth in claim 2 also including channel stops oriented vertically with respect to the axes of said electrical conductors and positioned between associated H-shaped geometries of said plurality of electrical conductors, said channel stops being defined in said substrate and positioned at the space between adjacent H-shaped geometries.
- 4. A charge-coupled device as set forth in claim 3 also including a Boron implant in said substrate in areas between adjacent ones of said H-shaped geometries.
- 5. A charge-coupled device as set forth in claim 4 also including an anti-reflecting coating in said areas between adjacent ones of said H-shaped geometries.
- 6. A charge-coupled device as set forth in claim 3 including a Phosphorous implant only in the areas of said substrate in which said vertical elements overlap.
- 7. A charge-coupled device as set forth in claim 3 wherein said multi-phase electrode structure comprises Polysilicon.
- 8. A charge-coupled device as set forth in claim 3 wherein each of said channel stops is sufficiently wide to overlap adjacent ones of said vertical elements.
- 9. A charge-coupled device as set forth in claim 4 wherein each of said channel stops is sufficiently wide to overlap adjacent ones of said vertical elements.
- 10. A charge-coupled device as set forth in claim 6 wherein each of said channel stops is sufficiently wide to overlap adjacent ones of said vertical elements.
RELATED PATENT APPLICATION
This application is a continuation in part of patent application Ser. No. 07/698,453, filed May 10, 1991, now abandoned.
US Referenced Citations (6)
Foreign Referenced Citations (4)
Number |
Date |
Country |
58-98961 |
Jun 1983 |
JPX |
59-113661 |
Jun 1984 |
JPX |
59-159564 |
Sep 1984 |
JPX |
62-293762 |
Dec 1987 |
JPX |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
698453 |
May 1991 |
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