Information
-
Patent Grant
-
6504557
-
Patent Number
6,504,557
-
Date Filed
Tuesday, May 29, 200123 years ago
-
Date Issued
Tuesday, January 7, 200321 years ago
-
Inventors
-
Original Assignees
-
Examiners
Agents
- Fay, Sharpe, Fagan, Minnich & McKee, LLP
-
CPC
-
US Classifications
Field of Search
US
- 347 123
- 347 127
- 347 128
- 347 151
-
International Classifications
-
Abstract
A print head suitable for use in an image forming system is provided having a pair of electrode layers separated by an isolating structure that includes a semiconductor. The presence of the semiconductor, such as a semiconductor layer, extends the life of the print head by reducing degradation of the print head.
Description
TECHNICAL FIELD
The present invention relates generally to image forming systems, and specifically relates to charged particle emitting print heads utilized in electron beam imaging printing.
BACKGROUND OF THE INVENTION
In an image forming system, such as ionography, or electron beam imaging (EBI), a latent electrostatic image is formed on an imaging dielectric surface by directing beams of charged particles onto the surface. The latent electrostatic image thus formed may then be developed by applying toner particles to the imaging surface that are attracted to those areas of the imaging surface where the electrostatic latent image resides. The toner particles on the imaging surface are then transferred to a receiving member (such as paper) before the imaging surface is cleaned in preparation for a new imaging cycle.
The source of the beams of charged particles in the image forming system is a print head. Referring to
FIG. 1A
, a typical print head
10
includes three layers that have electrodes. A first layer includes a plurality of RF-line electrodes
16
separated from a second layer of finger electrodes
12
by a dielectric layer
14
. A third layer is a screen electrode
18
isolated from the finger electrodes by a spacer layer
20
. The surface of both the RF-line electrodes
16
and the finger electrodes
12
can be smoothed by a smoothing dielectric
11
. In thin film structures, the smoothing dielectric is usually SOG (spin on glass). The finger electrodes
12
have finger openings
13
, typically circular, which are generally aligned with the apertures
22
in the screen electrode
18
, as shown in FIG.
1
A. The RF line electrodes
16
intersect the finger electrodes
12
where the finger openings
13
are located. If a high voltage is applied to the finger electrodes
12
and the RF-line electrodes
16
, an electrical breakdown of air inside the finger openings
13
occurs.
Referring to
FIG. 1B
, a cross-section of a single charge production site of the print head
10
is shown. The electrical breakdown causes formation of gaseous plasma full of charged ions and electrons. While the polarity of particles used for imaging is determined by the polarity of the screen electrode
18
potential with respect to a grounded imaging member
24
, on/off switching of charge emission from the print head
10
is regulated by a potential difference between the screen electrode
18
and the finger electrodes
12
.
The dielectric layer
14
is typically formed from stoichiometric compounds, such as silicon oxide, silicon nitride, silicon oxy-nitride, aluminum oxide, titanium oxide, boron nitride, etc., or their combination. Electrical conductivity of such materials is very low, about 10
−14
S/cm or less at room temperature.
A disadvantage of conventional print heads, and especially print heads designed for high density printing, is that the dielectric layer is subject to degradation. In particular, with repeated printing cycles, the plasma generated in the finger openings
13
degrades the dielectric layer.
Referring to
FIG. 2
, evidence of the dielectric degradation is shown. Underneath the finger electrode with a circular opening, there can be seen a dielectric layer, which in this particular case is aluminum oxide. The dielectric layer has been subjected to electrical discharges for a time equivalent to printing about 150,000 pages. Significant erosion of the dielectric material can be seen in the amount of dielectric by-products formed in the area around the opening. Such deterioration leads to charge generation reduction and therefore to print quality degradation. Ultimately, such degradation can lead to a full dielectric breakdown of the print head.
SUMMARY OF THE INVENTION
For the aforementioned reasons, there exists in the art a need for an electron beam imaging print head less susceptible to degradation arising from plasma generation.
The present invention provides a print head for an image forming system that is resistant to erosion. The print head comprises RF-line and finger electrodes separated by an isolating structure containing a dielectric and a semiconductor or resistive material. For example, the isolating structure may include a dielectric coated with a layer of semiconducting material. Typically, the semiconductor utilized in the present invention has a conductivity between about 10
−6
and about 10
−3
S/cm. The semiconductor can be made of a solid solution of a gas in a metal or semiconductor, where the gas includes a hydrogen gas, a nitrogen gas, an oxygen gas, and a halogen gas, or their mixtures. The semiconductor may also include solid solutions of non-metals in a metal, where the nonmetals include boron and/or carbon.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1A
shows a conventional charge emitting print head with three layers of electrodes separated by dielectric materials.
FIG. 1B
is a schematic cross-section of a single charge emitting site of the print head illustrated in FIG.
1
A.
FIG. 2
illustrates the degradation of a dielectric separating finger electrodes from RF-electrodes.
FIG. 3
shows a schematic cross-section of a single charge-emitting site of the present invention.
FIG. 4
illustrates the reduction of print head degradation as a result of applying the principles of the present invention.
DETAILED DESCRIPTION OF THE INVENTION
Referring to
FIG. 3
, there is shown a single charge-emitting site of a print head of the present invention. The print head comprises multiple electrode layers. The layers comprise a first electrode layer
34
that includes RF-line electrodes
36
, and a second electrode layer
30
that includes finger electrodes
32
with openings
45
. The first electrode layer
34
and the second electrode layer
30
are separated by an isolating structure
38
that is electrically insulating. The isolating structure
38
includes a dielectric and a semiconductor or a resistive material.
The isolating structure
38
can include a dielectric layer
38
a
having a conductivity lower than about 10
−14
S/cm. The isolating structure further includes a semiconductor layer
38
b
having a thickness of about 2 micrometers, and an electrical conductivity of between about 10
−6
and about 10
−3
S/cm. Examples of semiconductors that may be used according to the teachings of the present invention include solid solutions of gases, such as hydrogen, nitrogen, oxygen, and halogens, and non-metals, such as carbon and boron, in metals and semiconductors. A distinguishing feature of the materials used in the present invention is a relatively low concentration of dissolved elements as compared with those for stoichiometric compounds.
The print head further includes a screen electrode
44
with apertures
46
separated from the second electrode layer
30
by a spacer layer
40
. The charges emitted from the print head help form a latent image on an imaging member
50
utilized for forming images on a substrate, such as paper.
The use of a semiconductor in the isolating structure
38
helps to decrease the degradation of the print head. In operation of the print head, a high frequency voltage is applied to the RF-line electrodes
36
resulting in plasma generation inside the finger openings
45
. Without a semiconductor in the isolating structure
38
, during a half- period of the applied voltage, particles of one polarity bombard the central part of the surface of the dielectric layer
38
a,
charging the surface to a voltage almost equal to the voltage of the finger electrodes
32
. Around the charged area, a strong fringing electric field arises causing a local increase of the kinetic energy of opposite polarity particles bombarding the dielectric surface during the next half-period. Such a bombardment causes sputtering of the dielectric layer. Liberated atoms may chemically react with reactive ions and finally create by-products as shown in FIG.
2
.
Including a semiconductor in the isolating structure
38
, however, according to the teachings of the present invention, helps to reduce these by-products. For example, coating the dielectric layer
38
a
with the semiconductor layer
38
b
allows for charge migration inside the upper part of the isolating structure
38
. As the surface of the dielectric layer
38
a
is negatively charged, some electrons migrate toward the surface of the dielectric layer
38
a,
as well as laterally. These partially mobile electrons effectively screen the electrical fringing fields and therefore reduce the energy of the impinging positive ions during the next half-period of the applied voltage. To prevent print head degradation, the electrical conductivity of the semiconductor in the isolating structure
38
may be judiciously chosen to accommodate the frequency of the applied voltage and the dimensions of the print head.
FIG. 4
illustrates the significant reduction in degradation that occurs if a semiconductor layer
38
b
is used to cover the top side of the dielectric layer
38
a.
The opening
45
and surrounding structure shown in
FIG. 4
has been subjected to electrical discharges and resulting air plasma for a time equivalent to printing about 340,000 pages. This time is more than twice the time that the dielectric surface of
FIG. 2
has been exposed to electrical discharges. In contrast to the opening filled with by-products shown in
FIG. 2
, where the isolation structure is only a single dielectric layer
14
, the opening
45
in
FIG. 4
shows minimal degradation, and is almost free of by-products despite the longer exposure to air plasma. The reduction of the degradation in the print heads of the present invention, having an isolating structure
38
that includes a semiconductor, significantly extends the life of the print head.
While various aspects of the invention have been set forth by the drawings and the specification, it is to be understood that the foregoing detailed description is for illustration only and that various changes in parts, as well as the substitution of equivalent constituents for those shown and described, may be made without departing from the spirit and scope of the invention as set forth in the appended claims.
Claims
- 1. A print head suitable for use in an image forming system, comprisinga first electrode layer; a second electrode layer; and an isolating structure disposed between the first electrode layer and the second electrode layer, said isolating structure including a semiconductor.
- 2. The print head of claim 1, wherein the isolating structure includes a dielectric layer and a semiconductor layer.
- 3. The print head of claim 1, wherein the semiconductor has a conductivity between about 10−6 and about 10−3 S/cm.
- 4. The print head of claim 1, wherein the semiconductor comprises a solid solution of a gas in a metal or a second semiconductor.
- 5. The print head of claim 4, wherein the gas comprises one of hydrogen, nitrogen, oxygen, and halogen.
- 6. The print head of claim 1, wherein the semiconductor comprises a solid solution of a non-metal in a metal.
- 7. The print head of claim 6, wherein the non-metal comprises one of boron and carbon.
- 8. The print head of claim 1, wherein the semiconductor comprises a solid solution of a non-metal in a second semiconductor.
- 9. The print head of claim 1, wherein the first electrode layer comprises at least one RF-line electrode and the second electrode layer comprises at least one finger electrode.
- 10. The print head of claim 1, wherein the second electrode layer has at least one opening filled with air, said at least one opening exposing an area of the isolating structure thereto.
- 11. The print head of claim 10, further comprising a screen electrode for charge separation, said screen electrode having at least one aperture.
- 12. The print head of claim 11, wherein the at least one aperture is aligned with the at least one opening.
- 13. A method of manufacturing a print head suitable for use in an image forming system comprisinga) providing a first electrode layer; b) providing a second electrode layer; and c) disposing an isolating structure between the first electrode layer and the second electrode layer, said isolating structure including a semiconductor.
- 14. The method of claim 13, wherein, in the step of disposing, the isolating structure includes a dielectric layer and a semiconductor layer.
- 15. The method of claim 13, wherein, in the step of disposing, the semiconductor has a conductivity between about 10−6 and about 10−3 S/cm.
- 16. The method of claim 13, wherein, in the step of disposing, the semiconductor is a solid solution of gasses in at least one of a metal and a semiconductor.
- 17. The method of claim 13, wherein, in the step of disposing, the semiconductor comprises non-metal elements.
- 18. A print head suitable for use in an image-forming system, the print head comprising:a first electrode layer; a second electrode layer; and, an isolating structure deposited between the first electrode layer and the second electrode layer, said isolating structure including a dielectric layer and a semiconductor layer.
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Tarumi et al. |
Jan 1984 |
A |
6377289 |
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Apr 2002 |
B1 |
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Number |
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