Claims
- 1. A self-substrate bias circuit semiconductor device comprising:
- a semiconductor substrate of a first conductivity type;
- an oscillator fabricated on said semiconductor substrate for generating pulse signals;
- a rectify-charge pump circuit section fabricated on said semiconductor substrate and including a coupling capacitor connected to said oscillator to be supplied with pulse signals, a first field effect transistor connected between said capacitor and a reference voltage source, and a second field effect transistor connected between said capacitor of said substrate and said substrate; and
- a semiconductor region of a second conductivity type formed in said semiconductor substrate to surround said rectify-charge pump circuit section and to function as a capacitive region and a source region for said first field effect transistor, said semiconductor region being connected to said reference voltage source for functioning as a capacitive guard ring that absorbs fluctuating minority carriers generated from said rectify-charge pump circuit.
- 2. A semiconductor device according to claim 1 wherein said semiconductor region is formed by diffusing phosphorus into said semiconductor substrate.
- 3. A semiconductor device according to claim 2 wherein said semiconductor substrate has a specific resistance of 50 .OMEGA..cm and said semiconductor region a diffusion depth of 1.5 um.
Priority Claims (2)
Number |
Date |
Country |
Kind |
54-159487 |
Dec 1979 |
JPX |
|
54-159488 |
Dec 1979 |
JPX |
|
Parent Case Info
This is a continuation of Ser. No. 212, 544 filed Dec. 3, 1980.
US Referenced Citations (10)
Continuations (1)
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Number |
Date |
Country |
Parent |
212544 |
Dec 1980 |
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