Claims
- 1. A charge transfer device for transferring signal charges comprising
- a semiconductor substrate,
- a plurality of registers formed on the semiconductor substrate for transferring electrical charges along one or more given directions, the registers being electrically isolated from and parallel to each other, each of the registers including
- a channel layer formed on the semiconductor substrate,
- an insulating film formed on the channel layer, and
- a plurality of trapezoidal shaped transfer electrodes arrayed in juxtaposition along the direction of electrical charge transfer on the insulating film for controlling charge transfer in each of the registers and supplied with respective different control signals, a certain one of the transfer electrodes of one of the registers having the wider of its two parallel sides contiguous to the wider of the two parallel sides of a transfer electrode of an adjacent one of the registers, so that a junction region exists at the point of contiguity, to effect charge transfer across the registers, wherein
- during charge transfer across the adjacent registers, the transfer electrodes arrayed contiguous to each other between the adjacent registers are controlled by externally applied driving signals so that the channel potential of the charge receiving side region thereof becomes greater than the channel potential of the charge forwarding side region thereof.
- 2. The charge transfer device according to claim 1 wherein
- the transfer electrodes are driven by driving signals of three or more phases,
- at least one of the driving signals, other than the driving signals driving the transfer electrodes arrayed contiguous to each other across the adjacent registers, is a signal which, during transfer of the charges across the adjacent registers, causes a low channel potential with respect to the transfer electrode to which the at least one driving signal is supplied, and wherein
- the driving signals driving the transfer electrodes arrayed contiguous to each other across the adjacent registers are signals which during charge transfer in one and the same register, do not cause a high channel potential simultaneously.
- 3. The charge transfer device according to claim 2, wherein the transfer electrodes are driven by four-phase driving signals, those transfer electrodes which are arrayed adjacent to each other across the registers are formed in the same register with three other transfer electrodes in between, and wherein
- the transfer electrodes on both sides of the transfer electrodes arrayed adjacent across the registers are supplied with driving signals which decrease the channel potential thereof during transfer of the electrical charges across the registers.
- 4. The charge transfer device according to claim 1 wherein sensor means are provided for generating signal charges transferred to the plural registers.
Priority Claims (1)
Number |
Date |
Country |
Kind |
1-113448 |
May 1989 |
JPX |
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Parent Case Info
This is a continuation of co-pending application Ser. No. 07/516,273 filed on Apr. 30, 1990, now abandoned.
US Referenced Citations (5)
Foreign Referenced Citations (3)
Number |
Date |
Country |
0127223 |
Dec 1984 |
EPX |
2537369 |
Jun 1984 |
FRX |
63-14467 |
Jan 1988 |
JPX |
Non-Patent Literature Citations (1)
Entry |
IBM Technical Disclosure Bulletin, vol. 20, No. 1, Jun. 1977, pp. 436-437, New York, USA; S. G. Chamberlain et al.: "Silicon solid-state FET color scanner". |
Continuations (1)
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Number |
Date |
Country |
Parent |
516273 |
Apr 1990 |
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