Chemical mechanical polishing conditioner

Information

  • Patent Grant
  • 8951099
  • Patent Number
    8,951,099
  • Date Filed
    Tuesday, August 31, 2010
    13 years ago
  • Date Issued
    Tuesday, February 10, 2015
    9 years ago
Abstract
A chemical mechanical polishing (CMP) conditioner includes a ceramic substrate having a major surface, and an abrasive coating overlying the major surface. The major surface can include micro-protrusions arranged in a curved pattern. Alternatively, the micro-protrusions can be arranged in an irregular pattern.
Description
FIELD OF THE DISCLOSURE

The present disclosure generally relates to chemical mechanical polishing (CMP) conditioners, and more particularly relates to a ceramic substrate based CMP conditioner.


BACKGROUND

Chemical mechanical polishing is widely used in the manufacturing of semiconductor devices to obtain a smooth and even surface of the wafers. Typically, the wafer to be polished is held by a carrier positioned on a polishing pad attached above a rotating platen. By applying slurry to the pad and pressure to the carrier, the wafer is polished by relative movements of the platen and the carrier. A conventional polishing pad used in the chemical mechanical polishing process generally comprises a multitude of fine holes having a diameter of not greater than 200 microns. The holes can exhibit a pumping effect when pressure is applied to the polishing pad to achieve a high removal rate. However, after prolonged use, the holes can wear out or become blocked with polishing residues, causing an uneven surface of the polishing pad. As a result, the ability to polish wafers decreases over time and the effectiveness of CMP process for achieving a uniformly smooth wafer surface can be diminished.


To recover the polishing performance and to compensate for the uneven surface of the polishing pads, a conditioning process utilizing a conditioner for removing the uneven surface of the polishing pads is commonly used along with CMP processing.


SUMMARY

In a first aspect, a chemical mechanical polishing (CMP) conditioner can include a ceramic substrate having a major surface and an abrasive coating overlying the major surface. The major surface can include micro-protrusions arranged in a curved pattern or in an irregular pattern.


In another aspect, a method of forming chemical mechanical polishing (CMP) conditioner includes forming a green body having a major surface, sintering the green body to form a ceramic substrate, and depositing an abrasive coating overlying the ceramic substrate. The major surface including plurality of micro-protrusions;





BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure may be better understood, and its numerous features and advantages made apparent to those skilled in the art by referencing the accompanying drawings.



FIG. 1 is illustration an embodiment of a surface of a substrate including a plurality of micro-protrusions.



FIG. 2 is a diagram illustrating an exemplary curved conical shape.



FIG. 3 is a diagram illustrating an exemplary regular pattern.



FIG. 4 is an illustration of an embodiment including a plurality of micro-protrusions in a curved pattern.



FIGS. 5 and 6 are diagrams illustrating exemplary irregular patterns.



FIG. 7 is an illustration of a plurality of micro-protrusions in an irregular pattern.



FIG. 8 is an image showing wear patterns of a CMP conditioner with an irregular pattern and a CMP conditioner with a regular pattern.



FIG. 9 is an electron micrograph showing a chemical vapor deposition (CVD) diamond layer deposited on the substrate.



FIG. 10 is a diagram illustrating micro-protrusions having zero, positive, and negative rake angles.





The use of the same reference symbols in different drawings indicates similar or identical items.


DETAILED DESCRIPTION

In an embodiment, a chemical mechanical polishing (CMP) conditioner can include a substrate. The substrate can include a metal and metal alloys including tungsten, molybdenum, zirconium, copper, nickel, stainless steel, or the like. Alternatively, the substrate can include a ceramic, such as oxides, carbides, nitrides, oxynitrides, silicides, borides, or any combination thereof. Examples include Al2O3, SiC, WC, Si3N4, ZrO2, Cr2N3, and the like. Preferably, the substrate is chosen to be resistant to corrosion from the CMP environment. The substrate can have a thickness of between about 2 mm and about 15 mm.


A surface of the substrate can include a plurality of micro-protrusions. FIG. 1 shows an example of a surface 102 with a plurality of micro-protrusions 104. The micro-protrusions can be formed from the same material as the substrate. Additionally, the micro-protrusions can be continuous with the substrate and free of a boundary between the micro-protrusions and the substrate. Specifically, the substrate and the micro-protrusions are co-formed as a monolithic structure, rather than the micro-protrusions being formed separately from the substrate and applied to the substrate using an adhesion layer or other bonding technique.


In an embodiment, the micro-protrusions can have a size between about 1 micron and about 2000 microns, such as between about 5 microns and about 500 microns, even between about 10 microns and about 250 microns. In an embodiment, the plurality of micro-protrusions can have substantially the same size. Alternatively, a first set of the micro-protrusions can be smaller than a second set of the micro-protrusions. For example, the first set of the micro-protrusions may have a smaller height and/or a smaller width or diameter.


In an alternate embodiment, the micro-protrusions may have an extended length, such as greater than about 2000 microns. However, height of the extended micro-protrusions can be between about 1 micron and about 2000 microns, such as between about 5 microns and about 500 microns, even between about 10 microns and about 250 microns. Similarly, the width of the extended micro-protrusions can be between about 1 micron and about 2000 microns, such as between about 5 microns and about 500 microns, even between about 10 microns and about 250 microns.


In an embodiment, the micro-protrusions can be used as cutting elements of the conditioning pad. Alternatively, the micro-protrusions can be coated in an abrasive coating, such as a diamond film, a diamond-like film, a cubic boron nitride film, or the like. The abrasive coating can have an average thickness of at least about 0.5 microns, such as at least about 1.0 microns, even at least about 2.0 microns. Additionally, the abrasive coating can have an average thickness of not greater than about 15 microns, such as not greater than about 10 microns. Further, the thickness of the abrasive coating can have a variation of not greater than about 15%. The abrasive coating can provide further protection from corrosion and increase the cutting performance of the conditioning pad. The abrasive coating can be deposited using chemical vapor deposition (CVD), physical vapor deposition (PVD), or other known techniques for depositing films. In particular, a diamond film can be deposited using hot filament deposition or microwave deposition. The diamond film can include nanocrystalline diamond, microcrystalline diamond, or any combination thereof. Typically, nanocrystalline diamond can have a grain size of less than about 10 microns and can have a grain size of greater than about 1 micron. Microcrystalline diamond can have a grain size of greater than 10 microns, generally less than about 100 microns.


In an embodiment, the micro-protrusions can have substantially the same shape. Alternatively, a first portion of the micro-protrusions can have a first shape, and a second portion of the micro-protrusions can have a second shape. The micro-protrusions can be formed in a variety of shapes. For example, the micro-protrusions can be polygons or modified polygons. Examples of polygons include pyramids, such as triangular pyramids and square or rectangular pyramids, and parallelepipeds, such as cubes and rectangular prisms. Generally, polygons have sharp edges and vertices. Modified polygons can be polygons having rounded edges or vertices. Additionally, modified polygons can have convex or concave curved surfaces that meet at an edge. Further, the micro-protrusions may have a rake angle of zero, a positive rake angle, or a negative rake angle, as shown in FIG. 10. The rake angle is the angle of the top surface of the micro-protrusion relative to the horizontal taken from the leading edge to the trailing edge of the micro-protrusion. For a zero rake angle, the height of the leading edge can be the same as the height of the trailing edge of the micro-protrusion. A micro-protrusion having a positive rake angle can have a leading edge that is higher than the trailing edge, whereas a micro-protrusion having a negative rake angle can have a leading edge that is lower than the trailing edge.


In an embodiment, the micro-protrusions can be oriented in the same direction. That is the corresponding vertices of each micro-protrusion can be aligned in substantially the same direction. Alternatively, a first set of micro-protrusions can be orientated in a first direction and a second set of micro-protrusions can be oriented in a second direction. In yet another embodiment, the orientation of the micro-protrusions can be substantially random.


Alternatively, the micro-protrusions can be non-polygonal micro-protrusions. Examples of non-polygonal micro-protrusions include cones and rounded cones, and hemispheres and partial spheres. Generally, non-polygonal micro-protrusions do not have edges. FIG. 2 illustrates an example of a non-polygonal shape 200. Specifically, a cone 202 has a rounded vertex 204. The non-polygonal shape 200 can improve the uniformity of the CMP conditioning process, since the profile of the non-polygonal shape does not change as the conditioner is rotated.


In an embodiment, the micro-protrusions can be arranged in a pattern. The pattern can be a regular pattern, such as rectangular array where adjacent micro-protrusions are spaced apart by a substantially constant distance. FIG. 3 is an illustration of a graph of micro-protrusion distribution corresponding to a uniform grid of x, y coordinate values and showing regular gaps between consecutive coordinate values along the x and y axes.


Alternatively, the regular pattern can be a curved pattern, such as a swirl pattern or a spiral pattern. Generally, in a curved pattern, adjacent micro-protrusions can be arranged to follow an arc having a radius of curvature. The radius of curvature may be constant along the length of the arc, or may vary, being larger in one region of the arc and smaller in another region of the arc. FIG. 4 shows an exemplary embodiment of a substrate 402 having micro-protrusions 404, 406, and 408 arranged in a curved pattern. Micro-protrusions 404 through 408 can be arranged along arc 410 extending from the center 412 to the edge 414 of the substrate.


In an alternate embodiment, the micro-protrusions can be arranged in an irregular pattern. Generally, in an irregular pattern, the spacing between adjacent pairs of micro-protrusions can be randomly distributed. While some irregular patterns may define a minimum distance and/or a maximum distance between adjacent pairs, the spacing between adjacent pairs can be substantially randomly distributed within the allowable range. Additionally, an irregular pattern may have a defined density, such that there is substantially the same number of micro-protrusions per cm2 at various places across the surface of the conditioner.



FIG. 5 is an illustration of a graph of a micro-protrusion array of the invention, showing a random array of x, y coordinate values which have been restricted such that each pair of randomly generated coordinate values differs from the nearest coordinate value pair by a defined minimum amount (k) to create an exclusionary zone around each point on the graph.



FIG. 6 is an illustration of a graph of an abrasive grain array of the invention, showing an array that has been restricted along the x and y axes to numerical sequences wherein each coordinate value on an axis differs from the next coordinate value by a constant amount. The array has been restricted further by decoupling coordinate value pairs, and randomly reassembling the pairs such that each randomly reassembled pair of coordinate values is separated from the nearest pair of coordinate values by a defined minimum amount.


In yet another embodiment, a first portion of the micro-protrusions can be arranged in a regular pattern and a second portion of the micro-protrusions can be arranged in an irregular pattern. For example, micro-protrusions in an irregular patterned as shown in FIG. 7 can be interspersed between the arcs of the curved pattern shown in FIG. 4.


A CMP conditioner having at least a portion of the micro-protrusions arranged in an irregular pattern can have particular benefits over CMP conditioners having micro-protrusions arranged in a regular pattern, such as a rectangular array. As seen in FIG. 8, a CMP conditioner having a rectangular array of micro-protrusions can leave distinct wear patterns in the surface of the CMP pad, whereas a CMP conditioner having an irregular pattern of micro-protrusions can be less likely to leave wear patterns in the surface of the CMP pad. The wear patterns can result in a non-uniform surface of the polishing pad which can negatively effect the ability to achieve a smooth and even surface on the wafer being polished.


In an embodiment, an abrasive coating may be deposited overlying the major surface such as by using chemical vapor deposition, physical vapor deposition, or other known deposition techniques. The abrasive coating can be deposited to an average thickness of at last about 1.0 microns, such as at least about 2.0 microns. Further, the abrasive coating can have an average thickness of not greater than about 15 microns, such as not greater than about 10 microns. The abrasive coating can include a diamond coating, a diamond-like coating, a cubic boron nitride coating, or any combination thereof. In a particular embodiment, the abrasive coating may be a diamond coating deposited using hot filament deposition or microwave deposition. Additionally, the diamond coating can be polycrystalline, including nanocrystalline diamond, microcrystalline diamond, or the like. FIG. 9 is an electron micrograph showing a CVD diamond layer deposited on the surface of an exemplary CMP conditioner.


Turning to the process for making the CMP conditioner, in an embodiment, a green body having a plurality of micro-protrusions can be formed by pressing a ceramic material into a mold. Forming the substrate and the micro-protrusions as a single component reduces the likelihood that the micro-protrusions will separate from the body of the substrate during use. Heat may be supplied to the ceramic material during pressing. Further, a release agent may be applied to the mold before addition of the ceramic material. The ceramic material can include Al2O3, SiC, WC, Si3N4, ZrO2, Cr2N3, or the like. The ceramic material can be a ceramic powder, a sol gel, or other form adaptable for filling the mold.


The green body can be sintered to form a ceramic substrate having a plurality of micro-protrusions. In an embodiment, the green body can be machined prior to sintering to add additional surface features. For example, molding the micro-protrusions onto the surface and then machining the surface to create the islands can form large islands having micro-protrusions. In an alternate embodiment, the ceramic substrate can be formed by heating the ceramic material to a sintering temperature during pressing, eliminating the need for sintering in a subsequent step.


In an embodiment, an abrasive coating can be applied to the surface of the ceramic substrate. For example, chemical vapor deposition can be used to apply a polycrystalline diamond coating to the surface of the ceramic substrate. In an embodiment, the diamond coating can be applied directly overtop the ceramic substrate, such that the conditioner is free of any intermediate layers, such as adhesion or bonding layers, between the ceramic substrate and the abrasive layer. The diamond coating can improve the corrosion resistance of the CMP conditioner as well as providing additional abrasive properties.


The mold can be formed to create a pattern of recesses within the mold corresponding to the pattern of micro-protrusions on the desired CMP conditioner. For example, the mold can be patterned, such as by electrical discharge machining (EDM) such as micro-EDM, electrochemical machining (ECM), lithography and chemical etching, water jet cutting, laser cutting, or other known techniques.


Note that not all of the activities described above in the general description or the examples are required, that a portion of a specific activity may not be required, and that one or more further activities may be performed in addition to those described. Still further, the order in which activities are listed are not necessarily the order in which they are performed.


In the foregoing specification, the concepts have been described with reference to specific embodiments. However, one of ordinary skill in the art appreciates that various modifications and changes can be made without departing from the scope of the invention as set forth in the claims below. Accordingly, the specification and figures are to be regarded in an illustrative rather than a restrictive sense, and all such modifications are intended to be included within the scope of invention.


As used herein, the terms “comprises,” “comprising,” “includes,” “including,” “has,” “having” or any other variation thereof, are intended to cover a non-exclusive inclusion. For example, a process, method, article, or apparatus that comprises a list of features is not necessarily limited only to those features but may include other features not expressly listed or inherent to such process, method, article, or apparatus. Further, unless expressly stated to the contrary, “or” refers to an inclusive-or and not to an exclusive-or. For example, a condition A or B is satisfied by any one of the following: A is true (or present) and B is false (or not present), A is false (or not present) and B is true (or present), and both A and B are true (or present).


Also, the use of “a” or “an” are employed to describe elements and components described herein. This is done merely for convenience and to give a general sense of the scope of the invention. This description should be read to include one or at least one and the singular also includes the plural unless it is obvious that it is meant otherwise.


Benefits, other advantages, and solutions to problems have been described above with regard to specific embodiments. However, the benefits, advantages, solutions to problems, and any feature(s) that may cause any benefit, advantage, or solution to occur or become more pronounced are not to be construed as a critical, required, or essential feature of any or all the claims.


After reading the specification, skilled artisans will appreciate that certain features are, for clarity, described herein in the context of separate embodiments, may also be provided in combination in a single embodiment. Conversely, various features that are, for brevity, described in the context of a single embodiment, may also be provided separately or in any subcombination. Further, references to values stated in ranges include each and every value within that range.

Claims
  • 1. A chemical mechanical polishing (CMP) conditioner comprising: a ceramic substrate having a major surface, the major surface including micro-protrusions, at least a portion of the micro-protrusions being arranged in an irregular pattern, wherein the irregular pattern has a minimum spacing between adjacent micro-protrusions, wherein the distance between each adjacent pair of micro-protrusions is substantially randomly distributed within the minimum spacing; andan abrasive coating overlying the major surface.
  • 2. The CMP conditioner as recited in claim 1, wherein an additional portion of the micro-protrusions are arranged in a regular pattern.
  • 3. The CMP conditioner as recited in claim 1, wherein the micro-protrusions are non-polygonal.
  • 4. The CMP conditioner as recited in claim 1, wherein a number of micro-protrusions per cm2 on the major surface is substantially uniform.
  • 5. A chemical mechanical polishing (CMP) conditioner comprising: a ceramic substrate having a major surface, the major surface including micro-protrusions arranged in a pattern, wherein at least a portion of the micro-protrusions have a height of a trailing edge that is different from a height of a leading edge, the trailing edge and the leading edge at least partly defining a top surface of each respective micro-protrusion of the portion of micro-protrusions; andan abrasive coating overlying the major surface.
  • 6. The CMP conditioner as recited in claim 5, wherein the height of the leading edge is greater than the height of the trailing edge.
  • 7. The CMP conditioner as recited in claim 5, wherein the height of the leading edge is less than the height of the trailing edge.
  • 8. The CMP conditioner as recited in claim 5, wherein the ceramic substrate includes Al2O3, SiC, WC, Si3N4, ZrO2, Cr2N3, or any combination thereof.
  • 9. The CMP conditioner as recited in claim 5, wherein the abrasive coating has an average thickness of at least about 0.5 microns and no greater than about 15 microns.
  • 10. The CMP conditioner as recited in claim 5, wherein the thickness of the abrasive coating has a variation of no greater than about 15%.
  • 11. The CMP conditioner as recited in claim 5, wherein the CMP conditioner is free of an intermediate layer between the ceramic substrate and the abrasive coating.
  • 12. A chemical mechanical polishing (CMP) conditioner comprising: a substrate having a major surface, the major surface including micro-protrusions arranged in a pattern, wherein a first portion of the micro-protrusions have a first shape and a second portion of the micro-protrusions have a second shape that is different from the first shape; andan abrasive coating overlying the major surface.
  • 13. The CMP conditioner as recited in claim 12, wherein the substrate includes one or more materials selected from the following group: W, Mb, Zr, Cu, Ni, stainless steel.
  • 14. The CMP conditioner as recited in claim 12, wherein the micro-protrusions have a height between about 1 micron to about 2000 microns.
  • 15. The CMP conditioner as recited in clam 12, wherein the micro-protrusions have a width between about 1 micron to about 2000 microns.
CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority from PCT Application No. PCT/US10/047,306, filed Aug. 31, 2010, entitled “CHEMICAL MECHANICAL POLISHING CONDITIONER” naming inventors Jianhui W U, Richard W. J. HALL, Eric M. SCHULZ and Srinivasan RAMANATH which in turn claims priority to U.S. Provisional Patent Application Ser. No. 61/238,779 filed on Sep. 1, 2009, entitled “CHEMICAL MECHANICAL POLISHING CONDITIONER” naming inventors Jianhui W U, Richard W. J. HALL, Eric M. SCHULZ and Srinivasan RAMANATH, which are all incorporated by reference herein in their entirety.

PCT Information
Filing Document Filing Date Country Kind 371c Date
PCT/US2010/047306 8/31/2010 WO 00 5/15/2012
Publishing Document Publishing Date Country Kind
WO2011/028700 3/10/2011 WO A
US Referenced Citations (182)
Number Name Date Kind
2175073 Amstuz Oct 1939 A
2194472 Jackson Mar 1940 A
2785060 Keeleric Mar 1957 A
2820746 Keeleric Jan 1958 A
3243925 Buzzell Apr 1966 A
3341984 Sickel et al. Sep 1967 A
RE26879 Kelso May 1970 E
3990124 MacKay, Jr. et al. Nov 1976 A
4018576 Lowder et al. Apr 1977 A
4222204 Benner Sep 1980 A
4496506 Sakato et al. Jan 1985 A
4818515 Ceresa et al. Apr 1989 A
4925457 Dekok et al. May 1990 A
4931069 Wiand Jun 1990 A
4951423 Johnson Aug 1990 A
4968326 Wiand Nov 1990 A
5014468 Ravipati et al. May 1991 A
5049165 Tselesin Sep 1991 A
5152917 Pieper et al. Oct 1992 A
5219462 Bruxvoort et al. Jun 1993 A
5234655 Wiech, Jr. Aug 1993 A
5304223 Pieper et al. Apr 1994 A
5352493 Dorfman et al. Oct 1994 A
5382189 Arendall Jan 1995 A
5456627 Jackson et al. Oct 1995 A
5466431 Dorfman et al. Nov 1995 A
5472461 Li Dec 1995 A
5492771 Lowder et al. Feb 1996 A
5511718 Lowder et al. Apr 1996 A
5626509 Hayashi May 1997 A
5645474 Kubo et al. Jul 1997 A
5660881 Okamura Aug 1997 A
5667433 Mallon Sep 1997 A
5669943 Horton et al. Sep 1997 A
5681362 Wiand Oct 1997 A
5683289 Hempel, Jr. Nov 1997 A
5753160 Takeuchi et al. May 1998 A
5791975 Cesna et al. Aug 1998 A
5795648 Goel et al. Aug 1998 A
5833724 Wei et al. Nov 1998 A
5842912 Holzapfel et al. Dec 1998 A
5851138 Hempel, Jr. Dec 1998 A
5863306 Wei et al. Jan 1999 A
5919084 Powell et al. Jul 1999 A
5921856 Zimmer Jul 1999 A
5976204 Hammarstrom et al. Nov 1999 A
5980678 Tselesin Nov 1999 A
6004362 Seals et al. Dec 1999 A
6022266 Bullard et al. Feb 2000 A
6027659 Billett Feb 2000 A
6039641 Sung Mar 2000 A
6059638 Crevasse et al. May 2000 A
6096107 Caracostas et al. Aug 2000 A
6099603 Johnson Aug 2000 A
6123612 Goers Sep 2000 A
6136043 Robinson et al. Oct 2000 A
6136143 Winter et al. Oct 2000 A
6159087 Birang et al. Dec 2000 A
6200675 Neerinck et al. Mar 2001 B1
6213856 Cho et al. Apr 2001 B1
6234883 Berman et al. May 2001 B1
6258139 Jensen Jul 2001 B1
6261167 Watson et al. Jul 2001 B1
6263605 Vanell Jul 2001 B1
6286498 Sung Sep 2001 B1
6288648 Easter et al. Sep 2001 B1
6293980 Wei et al. Sep 2001 B2
6309433 Kinoshita Oct 2001 B1
6341739 Hogg Jan 2002 B1
6347982 Holzapfel Feb 2002 B1
6358133 Cesena et al. Mar 2002 B1
6364742 Fukuzawa Apr 2002 B1
6368198 Sung et al. Apr 2002 B1
6390908 Chen et al. May 2002 B1
6390909 Foster et al. May 2002 B2
6402603 Watson et al. Jun 2002 B1
6416878 An Jul 2002 B2
6419574 Takahashi et al. Jul 2002 B1
6439986 Myoung et al. Aug 2002 B1
6468642 Bray et al. Oct 2002 B1
6475072 Canaperi et al. Nov 2002 B1
6495464 Boyd et al. Dec 2002 B1
6508697 Benner et al. Jan 2003 B1
6511713 Mathisen et al. Jan 2003 B2
6537140 Miller et al. Mar 2003 B1
6558742 Tzeng May 2003 B1
6572446 Osterheld et al. Jun 2003 B1
6575353 Palmgren Jun 2003 B2
6626167 Kim et al. Sep 2003 B2
6626747 Sidebottom Sep 2003 B1
6641471 Pinheiro et al. Nov 2003 B1
6679243 Sung Jan 2004 B2
6699106 Myoung et al. Mar 2004 B2
6769975 Sagawa Aug 2004 B2
6818029 Myoung et al. Nov 2004 B2
6821189 Coad et al. Nov 2004 B1
6843952 Yokoyama Jan 2005 B1
6887138 Bottema et al. May 2005 B2
6893336 Jin May 2005 B2
6945857 Doan et al. Sep 2005 B1
7066795 Balagani et al. Jun 2006 B2
7124753 Sung Oct 2006 B2
7217172 Benner May 2007 B2
7258708 Sung Aug 2007 B2
7300338 Wielonski et al. Nov 2007 B2
7384436 Sung Jun 2008 B2
7467989 Lin et al. Dec 2008 B2
7507267 Hall et al. Mar 2009 B2
7544114 Orlhac Jun 2009 B2
7575503 Benner Aug 2009 B2
7641538 Goers Jan 2010 B2
7993419 Hall et al. Aug 2011 B2
8096858 Sakamoto et al. Jan 2012 B2
8342910 Dinh-Ngoc et al. Jan 2013 B2
8491964 Morell et al. Jul 2013 B1
8657652 Hwang et al. Feb 2014 B2
20020068518 Cesena et al. Jun 2002 A1
20020072302 Robinson Jun 2002 A1
20020127962 Cho et al. Sep 2002 A1
20020173234 Sung et al. Nov 2002 A1
20020182401 Lawing Dec 2002 A1
20020184829 Lemberger et al. Dec 2002 A1
20020197947 Sagawa Dec 2002 A1
20030036341 Myoung et al. Feb 2003 A1
20030114094 Myoung et al. Jun 2003 A1
20030175519 Oshima Sep 2003 A1
20030205239 Cho et al. Nov 2003 A1
20040009742 Lin et al. Jan 2004 A1
20040031438 Sung Feb 2004 A1
20040037948 Tank et al. Feb 2004 A1
20040072510 Kinoshita et al. Apr 2004 A1
20040137829 Park et al. Jul 2004 A1
20040180617 Goers Sep 2004 A1
20040198206 Toge et al. Oct 2004 A1
20050025973 Slutz et al. Feb 2005 A1
20050076577 Hall et al. Apr 2005 A1
20050085169 Cooper et al. Apr 2005 A1
20050097824 Braunschweig et al. May 2005 A1
20050118820 Akahori et al. Jun 2005 A1
20050153634 Prasad et al. Jul 2005 A1
20050156362 Arnold et al. Jul 2005 A1
20050214201 Maruno et al. Sep 2005 A1
20050215188 Toge et al. Sep 2005 A1
20050260922 Gan et al. Nov 2005 A1
20050276979 Slutz et al. Dec 2005 A1
20050287319 Miyazawa et al. Dec 2005 A1
20060010780 Hall et al. Jan 2006 A1
20060073774 Sung Apr 2006 A1
20060079162 Yamashita et al. Apr 2006 A1
20060160477 Kinoshita et al. Jul 2006 A1
20060213128 Sung Sep 2006 A1
20060254154 Huang et al. Nov 2006 A1
20070018363 Corrigan Jan 2007 A1
20070049185 Lin et al. Mar 2007 A1
20070060026 Sung Mar 2007 A1
20070066194 Wielonski et al. Mar 2007 A1
20070072527 Palmgren Mar 2007 A1
20070235801 Cheng et al. Oct 2007 A1
20070259609 Liyoshi et al. Nov 2007 A1
20080004743 Goers et al. Jan 2008 A1
20080132153 Rikita et al. Jun 2008 A1
20080153398 Sung et al. Jun 2008 A1
20080193649 Jacquet et al. Aug 2008 A1
20080248734 Bajaj Oct 2008 A1
20080271384 Puthanangady et al. Nov 2008 A1
20090053980 Hwang et al. Feb 2009 A1
20090077900 Chuda et al. Mar 2009 A1
20090202781 Hall et al. Aug 2009 A1
20090206304 Dziomkina Aug 2009 A1
20090270792 Lastovich et al. Oct 2009 A1
20090275274 Sakamoto et al. Nov 2009 A1
20100022174 Chou et al. Jan 2010 A1
20100248595 Dinh-Ngoc et al. Sep 2010 A1
20100330886 Wu et al. Dec 2010 A1
20110097977 Bubnick et al. Apr 2011 A1
20110252710 Hall et al. Oct 2011 A1
20120060426 Puthanangady et al. Mar 2012 A1
20120122377 Wu et al. May 2012 A1
20120220205 Wu et al. Aug 2012 A1
20130078895 Dinh-Ngoc et al. Mar 2013 A1
20130219801 Liebelt et al. Aug 2013 A1
20130316630 Rothenberg et al. Nov 2013 A1
Foreign Referenced Citations (50)
Number Date Country
10109892 Sep 2002 DE
1020303 Jul 2000 EP
1208945 May 2002 EP
1297928 Apr 2003 EP
1346797 Sep 2003 EP
1767312 Mar 2007 EP
4250978 Sep 1992 JP
H11-77536 Mar 1999 JP
2000-052254 Feb 2000 JP
2000-127046 May 2000 JP
2000190200 Jul 2000 JP
2001-018172 Jan 2001 JP
3261687 Mar 2002 JP
2002-178264 Jun 2002 JP
2002-200553 Jul 2002 JP
2002210659 Jul 2002 JP
2003-048163 Feb 2003 JP
2003-053665 Feb 2003 JP
2003-094332 Apr 2003 JP
2003-117822 Apr 2003 JP
2003-305644 Oct 2003 JP
2004-025377 Jan 2004 JP
2004-066409 Mar 2004 JP
2004098264 Apr 2004 JP
2004-202639 Jul 2004 JP
2005040946 Feb 2005 JP
2007-109767 Apr 2007 JP
2007083389 Apr 2007 JP
4084944 Apr 2008 JP
2008-114334 May 2008 JP
2008-186998 Aug 2008 JP
2008-229775 Oct 2008 JP
10-2001-0032812 Apr 2001 KR
2002-0036138 May 2002 KR
20-0298920 Jan 2003 KR
10-2009-0013366 Feb 2009 KR
20090013366 Feb 2009 KR
20090082360 Jul 2009 KR
9845092 Oct 1998 WO
WO 9943491 Sep 1999 WO
2005039828 May 2005 WO
2005039828 May 2005 WO
2007149683 Dec 2007 WO
2008002735 Jan 2008 WO
2008036892 Mar 2008 WO
2009026419 Feb 2009 WO
2012004376 Jan 2010 WO
2010110834 Sep 2010 WO
2010141464 Dec 2010 WO
2013166375 Nov 2013 WO
Non-Patent Literature Citations (21)
Entry
PCT/US2010/047306 International Search Report dated Mar. 31, 2011, 14 pages.
“Electrical Discharge Machining”, Wikipedia, 6 pages.
De Pellegrin, D.V., t al., “The Measurement and Description of Diamond Shape in Abrasion,” Department of Mechanical and Manufacturing Engineering, Univeristy of Dublin, Ireland, 16 pgs.
Elmufdi, Carolina, L., et al., “The Impact of Pad Microtexture and Materials Properties on Surface Contact and Defectivity in CMP,”Pad Engineering Research Group, 11th International CMP Symposium, Lake Placid, NY, Aug. 15, 2006, 18 pgs.
Hwang, Taewook et al., “Advanced Pad Conditioner Design for Oxide/Metal CMP,” Saint-Gobain High Performance Materials, Transactions on Electrical and Electronic Materials, vol. 7, No. 2, Apr. 2006, pp. 62-66.
Hwang, Taewook et al., “Optimized and Customized CMP Conditioner Design for Next Generation Oxide/Metal CMP,” Saint-Gobain High Performance Materials, 6 pgs.
Lawing, A. Scott, “Pad Conditioning and Textural Effects in Chemical Mechanical Polishing,” Rohm and Haas Electronic Materials CMP Technologies, CMP-MIC Conference, Feb. 23-25, 2005, pp. 33-42.
Popp, U., et al “Properties of Nanocrystalline Ceramic Powders Prepared by Laser Evaporation and Recondensation”, Journal of the European Ceramic Society 18 (1998) 1153-1160, Copyright 1998 Elsevier Science Limited, 8 pages.
Li, et al, “The effect of the polishing pad treatments on the chemical-mechanical polishing of SiO2 films”, Thin Solid Films 270 (1995) pp. 601-606.
Stavreva, et al, “Characteristics in Chemical-Mechanical Polishing of Copper: Comparison of Polishing Pads”, Applied Surface Science 108 (1997) pp. 39-44.
Chan, et al, “A preliminary study of gentle CVDD pad dressers potential for fixed abrasives conditioning”, Nov. 19-20, 2002 VMIC Conference, 2002 IMIC-400/00/0395; pp. 395-398.
Sung, “CMP Pad Dresser: A Diamond Grid Solution,” DiaGrid(r) CMP conditioner, Kinik Company, Taiwan, 41 pages.
Koshy, P., et al, “Surface Generation with Engineered Diamond Grinding Wheels: Insights from Simulation,” McMaster Manufacturing Research Institute; McMaster University, Hamilton, Canada; 5 pages.
East Diamond Industrial Co.,Ltd. and Hunan Real Tech Superabrasive & Tool Co.,Ltd. “Diamond Grain Mesh Size/Grit Size Comparison Chart”, 1 page <http://www.china-superabrasives.com/diamond—mesh—size.htm>.
“Abrasive and Compounds,” http://www.newportglass.com/grit.htm.
International Search Report for PCT/US2010/036895 mailed Mar. 14, 2011, 1 page.
International Search Report for PCT/US2009/069961 mailed Aug. 13, 2010, 1 page.
International Search Report for PCT/US2004/28881 mailed Dec. 23, 2004, 1 page.
International Search Report for PCT/US2008/073823 mailed Nov. 26, 2008, 1 page.
International Search Report for PCT/US2007/079154 mailed Jan. 18, 2008, 1 page.
International Search Report for PCT/US2013/039447 mailed Sep. 17, 2013, 1 page.
Related Publications (1)
Number Date Country
20120220205 A1 Aug 2012 US
Provisional Applications (1)
Number Date Country
61238779 Sep 2009 US