Chemical Vapor Deposition Epitaxial Buffer Layers for Superconductors

Information

• NSF Award
• 9061171

Owner

• Superconductor Technologies, Inc.

• Award Id

  9061171

• Award Effective Date

  1/1/1991 - 34 years ago

• Award Expiration Date

  9/30/1991 - 33 years ago

• Award Amount

  $ 49,995.00

• Award Instrument

  Standard Grant

The objective of the proposed research is to develop epitaxial buffer layers grown by chemical vapor deposition (CVD) that will provide both a diffusion/reaction barrier and a transition in crystal structure and lattice parameter between a low loss single crystal substrate and an epitaxial, single crystal high temperature superconducting film. Phase I will establish proof of concept via homoepitaxy. For example magnesium oxide films will be grown on sing crystal magnesium oxide substrates and lanthanum aluminum oxide films will be grown on single lanthanum aluminum oxide substrates. The films will be evaluated for crystal quality, surface smoothness and uniformity, and process conditions will be adjusted to optimize film properties. In Phase II the process will be extended to heteroepitaxy, with the goal of providing epitaxial buffer layers for superconducting films on substrates such as single crystal aluminum oxide (sapphire) that are high desirable for microwave applications.

• Program Officer

  Ritchie B. Coryell

• Min Amd Letter Date

  11/28/1990 - 34 years ago

• Max Amd Letter Date

  10/7/1991 - 33 years ago

• ARRA Amount

• Name

  SUPERCONDUCTOR TECHNOLOGIES INC

• City

  SANTA BARBARA

• State

  CA

• Country

  United States

• Address

  460 WARD DRIVE

• Postal Code

  931112310

• Phone Number

  8056837646

• First Name

  Timothy

• Last Name

  James

• Start Date

  1/1/1991 12:00:00 AM

• Name

  Materials Research

• Code

  106000

• Name

  Chemistry

• Code

  12