Patent Application
20130222106
The present invention relates to a chip thermistor and a thermistor assembly board.
There is a known chip thermistor provided with a thermistor element body having a pair of principal faces opposed to each other, and a pair of electrodes arranged as separated from each other on one principal face of the thermistor element body (e.g., cf. Patent Literature 1).
Patent Literature 1: Japanese Patent Application Laid-open No. S62-33401
In the chip thermistor described in Patent Literature 1, the whole of the thermistor element body does not contribute to the characteristics thereof, but a partial region between the pair of electrodes in the thermistor element body and near the principal face where the pair of electrodes are arranged mainly contributes to the characteristics. The depth of the partial region contributing to the characteristics (the distance from the principal face where the pair of electrodes are arranged) is likely to disperse. This dispersion affects the resistance and it was difficult to obtain a high-accuracy chip thermistor with stable characteristics. In the chip thermistor described in Patent Literature 1, the dimensional accuracy between the pair of electrodes is also likely to disperse. This dispersion may also affect the resistance.
It is an object of the present invention to provide a high-accuracy chip thermistor with small dispersion of resistance. It is another object of the present invention to provide a thermistor assembly board for obtaining high-accuracy chip thermistors with small dispersion of resistance.
A chip thermistor according to the present invention is one comprising: a thermistor element body having first and second principal faces opposed to each other in a first direction; first and second electrodes arranged as separated from each other in a second direction perpendicular to the first direction, on the first principal face of the thermistor element body; and a third electrode arranged so as to lap over the first and second electrodes, when viewed from the first direction, on the second principal face of the thermistor element body.
In the chip thermistor according to the present invention, a region between the first electrode and the third electrode (which will be referred to hereinafter as “first region”) and a region between the second electrode and the third electrode (which will be referred to hereinafter as “second region”) in the thermistor element body are electrically connected in series through the third electrode between the first electrode and the second electrode. For this reason, a resistance component of the chip thermistor is represented by a combined resistance component of parallel connection of a combined resistance component of the first region and the second region connected in series, and a resistance component of a region between the first electrode and the second electrode and near the first principal face in the thermistor element body (which will be referred to hereinafter as “third region”). Since the resistance component of the third region is extremely larger than the resistance component of the first region and the resistance component of the second region because the third region is an extremely thin region of the thermistor element body. For this reason, an electric current flowing in the chip thermistor is more likely to flow in the first region and the second region and less likely to flow in the third region. Therefore, the characteristics of the chip thermistor are dominantly determined by the first region and the second region and these regions mainly contribute to the characteristics.
The value of the resistance component of the first region is proportional to a spacing between the first electrode and the third electrode and inversely proportional to an overlapping area between the first electrode and the third electrode. Since the spacing between the first electrode and the third electrode is controlled by the thickness of the thermistor element body, it is unlikely to disperse. Since the overlapping area between the first electrode and the third electrode is a relatively large value, even if it has some dispersion, influence thereof will be little. Therefore, the value of the resistance component of the first region is unlikely to disperse. Similarly, the value of the resistance component of the second region is unlikely to disperse. As a result of these, the chip thermistor of the present invention has small dispersion of resistance and demonstrates high accuracy.
A creepage distance between the first electrode and the second electrode in the second direction may be set to be larger than a clearance between the first electrode and the second electrode in the second direction. In this case, the value of the resistance component of the third region becomes much larger. For this reason, the characteristics of the chip thermistor are more dominantly determined by the first region and the second region, whereby the dispersion of resistance can be kept extremely small.
Unevenness may be formed in a region between the first electrode and the second electrode on the first principal face. In this case, we can surely obtain the configuration wherein the creepage distance between the first electrode and the second electrode in the second direction is set to be larger than the clearance between the first electrode and the second electrode in the second direction.
A groove extending in a direction intersecting with the second direction may be formed in the region between the first electrode and the second electrode on the first principal face. In this case, we can appropriately and readily obtain the configuration wherein the creepage distance between the first electrode and the second electrode in the second direction is set to be larger than the clearance between the first electrode and the second electrode in the second direction. For example, the value of the resistance component of the third region can be readily controlled to a desired value, by the depth and number of grooves to be formed.
When viewed from the first direction, the first principal face may be located inside an outer contour line of the second principal face and the first and second electrodes may be located inside an outer contour line of the third electrode. There will be no change in an overlapping area between the first electrode and the third electrode and in an overlapping area between the second electrode and the third electrode even if there is a positional deviation of the first and second electrodes. Therefore, the positional deviation will not induce dispersion of the characteristics.
A thermistor assembly board according to the present invention is one comprising: a thermistor substrate having first and second principal faces opposed to each other in a first direction; a plurality of electrode pairs arranged on the first principal face of the thermistor substrate, each electrode pair consisting of first and second electrodes separated from each other in a second direction perpendicular to the first direction; and an electrode arranged so as to lap over the plurality of electrode pairs, when viewed from the first direction, on the second principal face of the thermistor substrate.
In the thermistor assembly board according to the present invention, a portion corresponding to each electrode pair functions as a chip thermistor. Therefore, we can obtain the thermistor assembly board for obtaining the high-accuracy chip thermistors with small dispersion of resistance, as described above.
In the thermistor substrate, grooves may be formed from the first principal face side so as to mark off each of the plurality of electrode pairs.
A creepage distance between the first electrode and the second electrode in the second direction may be set to be larger than a clearance between the first electrode and the second electrode in the second direction. In this case, the value of the resistance component of the region between the first electrode and the second electrode and near the first principal face in the thermistor substrate becomes much larger. Therefore, we can obtain the thermistor assembly board for obtaining the high-accuracy chip thermistors with extremely small dispersion of resistance.
Unevenness may be formed in a region between the first electrode and the second electrode on the first principal face. In this case, we can surely obtain the configuration wherein the creepage distance between the first electrode and the second electrode in the second direction is set to be larger than the clearance between the first electrode and the second electrode in the second direction.
A groove extending in a direction intersecting with the second direction may be formed in the region between the first electrode and the second electrode on the first principal face. In this case, we can appropriately and easily obtain the configuration wherein the creepage distance between the first electrode and the second electrode in the second direction is set to be larger than the clearance between the first electrode and the second electrode in the second direction.
The present invention can provide the high-accuracy chip thermistor with small dispersion of resistance. Furthermore, the present invention can provide the thermistor assembly board for obtaining the high-accuracy chip thermistors with small dispersion of resistance.
The preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings. In the description, the same elements or elements with the same functionality will be denoted by the same reference signs, without redundant description.
First, a configuration of a chip thermistor 1 according to an embodiment of the present invention will be described with reference to
The chip thermistor 1, as shown in
The thermistor element body 3 has first and second principal faces 3a, 3b and four side faces 3c-3f. The first and second principal faces 3a, 3b are opposed to each other in a first direction (Z-direction in the drawings). The four side faces 3c-3f extend along the first direction so as to connect the first principal face 3a and the second principal face 3b. The thermistor element body 3 is made, for example, of a spinel-type metal oxide containing Mn as a major component and further containing at least one or more of Ni, Co, Ca, Zr, Al, Cu, and Fe as minor component. The thermistor element body 3 is a semiconductor ceramic comprised of the spinel-type metal oxide.
In the thermistor element body 3, the area of the first principal face 3a is smaller than that of the second principal face 3b. The first principal face 3 a, when viewed from the first direction, is located inside an outer contour line of the second principal face 3b. Therefore, a level difference is formed between the region on the first principal face 3a side and the region on the second principal face 3b side in the side faces 3c-3f of the thermistor element body 3. The thickness of the thermistor element body 3 is set, for example, to about 0.2 mm.
The first electrode 5 and the second electrode 7 are arranged on the first principal face 3a of the thermistor element body 3. The first electrode 5 and the second electrode 7 are located as separated from each other in a second direction (e.g., X-direction in the drawings) perpendicular to the first direction. The first and second electrodes 5, 7 have a rectangular shape (oblong shape in the present embodiment). The first electrode 5 and the second electrode 7 are juxtaposed so that long-side directions of the respective electrodes 5, 7 are parallel to each other. The first and second electrodes 5, 7 are set, for example, in the size of about 0.4 mm×0.2 mm. The clearance between the first electrode 5 and the second electrode 7 in the second direction is set, for example, to about 0.2 mm.
The third electrode 9 is arranged on the second principal face 3b of the thermistor element body 3. The third electrode 9 is located so as to lap over the first and second electrodes 5, 7 when viewed from the first direction. The third electrode 9 has a rectangular shape (oblong shape in the present embodiment). In the present embodiment, the third electrode 9 is formed so as to cover the whole of the second principal face 3b. The first and second electrodes 5, 7 are set, for example, in the size of about 0.6 mm×0.4 mm.
The first and second electrodes 5, 7, as shown in
The first to third electrodes 5, 7, 9 are comprised of an electroconductive material (e.g., Ag or the like) that is usually used as electrodes of chip type electronic components. The first to third electrodes 5, 7, 9 are constructed as sintered bodies of an electroconductive paste containing the foregoing electroconductive material. The first to third electrodes 5, 7, 9 may contain a plated layer as an outermost layer. The electroconductive material may contain Au, Pt, Pd, or Cu, instead of aforementioned Ag.
A plurality of (four in the present embodiment) grooves 11 extending in a direction (Y-direction in the drawings) intersecting with (e.g., perpendicular to) the second direction are formed in the region between the first electrode 5 and the second electrode 7 on the first principal face 3a of the thermistor element body 3. The plurality of grooves 11 are formed as arranged in a direction perpendicular to the extending direction of the grooves 11. For this reason, unevenness is formed in the region between the first electrode 5 and the second electrode 7 on the first principal face 3a, when viewed in the second direction. Since the unevenness is formed, the creepage distance between the first electrode 5 and the second electrode 7 in the second direction is set to be larger than the clearance between the first electrode 5 and the second electrode 7 in the second direction. The extending direction of the grooves 11 is parallel to the long-side directions of the respective electrodes 5, 7. In the present embodiment, the width of the grooves 11 is set to about 50 μm and the depth thereof to about 30 μm.
In the chip thermistor 1, the first principal face 3a is a mount surface to be opposed to another component (e.g., a circuit board, an electronic component, or the like). Namely, the chip thermistor 1 is mounted on another component in such a manner that the first and second electrodes 5, 7 are connected to land electrodes of the other component.
The below will describe an example of a manufacturing process of the chip thermistor 1 having the above-described configuration, with reference to
First, a thermistor substrate 21 is prepared, as shown in
Next, as shown in
Next, as shown in
The grooves 25 extend in two directions (X-direction and Y-direction in the drawings) perpendicular to the first direction and perpendicular to each other, and are formed in a grid pattern. The depth of the grooves 25 is larger than that of the grooves 11. The grooves 11 are formed so as to extend in the Y-direction, between the grooves 25 extending in the Y-direction. In the present embodiment, the width of the grooves 25 is set to about 50 μm and the depth thereof to about 100 μm.
The grooves 11, 25 are formed in the thermistor substrate 21, i.e., the electrode 23 is cut in conjunction with formation of the grooves 11, 25, thereby to define the first electrodes 5 and the second electrodes 7. The contours of the first and second electrodes 5, 7 are defined by the grooves 11, 25. Through this process, a plurality of electrode pairs, each consisting of the first electrode 5 and the second electrode 7, are arranged on the first principal face 21a of the thermistor substrate 21. The plurality of electrode pairs (first and second electrodes 5, 7) are marked off by the grooves 25. The electrode 24 formed on the second principal face 21b of the thermistor substrate 21 is arranged so as to lap over the plurality of electrode pairs (first and second electrodes 5, 7) when viewed from the first direction. The thermistor substrate 21 with the grooves 11, 25 formed therein becomes a thermistor assembly board in which the plurality of electrode pairs (first and second electrodes 5, 7) and the electrode 24 are formed.
Next, as shown in
The cutting of the thermistor substrate 21 can be performed with a dicing blade in the same manner as the grooves 11, 25 are formed. At this time, the dicing blade used for cutting of the thermistor substrate 21 is one having the width smaller than that of the dicing blade used for formation of the grooves 11, 25. Since the width of the dicing blade used for cutting of the thermistor substrate 21 is smaller than the width of the dicing blade used for formation of the grooves 11, 25, the cutting of the thermistor substrate 21 can be readily carried out.
The third electrodes 9 are defined by the cutting of the thermistor substrate 21, i.e., by cutting of the electrode 24. The contours of the third electrodes 9 are defined by the cutting of the thermistor substrate 21.
In the present embodiment, as described above, a region 4a between the first electrode 5 and the third electrode 9 and a region 4b between the second electrode 7 and the third electrode 9 in the thermistor element body 3 are electrically connected in series through the third electrode 9 between the first electrode 5 and the second electrode 7 (cf.
In general, the resistance “R” of a chip thermistor with a plurality of opposed electrodes is obtained by the following relational expression.
R=(a*ρ*t)/S
In this expression, “a” is a coefficient, “ρ” the resistivity of the thermistor material, “t” a distance between the electrodes, and “S” an overlapping area of the electrodes.
Therefore, the value of the resistance component of the region 4a is proportional to a spacing between the first electrode 5 and the third electrode 9 and inversely proportional to an overlapping area between the first electrode 5 and the third electrode 9. Since the spacing between the first electrode 5 and the third electrode 9 is controlled by the thickness of the thermistor element body 3, it is unlikely to disperse. Since the overlapping area between the first electrode 5 and the third electrode 9 is a relatively large value, influence thereof is little even if it has some dispersion. Therefore, the value of the resistance component of the region 4a is unlikely to disperse. Similarly, the value of the resistance component of the region 4b is also unlikely to disperse. As a result of these, the chip thermistor 1 has small dispersion of resistance and demonstrates high accuracy.
In the present embodiment, the plurality of grooves 11 are formed in the region between the first electrode 5 and the second electrode 7 on the first principal face 3a. Since this configuration forms the unevenness in the region between the first electrode 5 and the second electrode 7 on the first principal face 3a, the creepage distance between the first electrode 5 and the second electrode 7 in the second direction is set to be larger than the clearance between the first electrode 5 and the second electrode 7 in the second direction. For this reason, the value of the resistance component of the region 4c becomes much larger and the characteristics of the chip thermistor 1 are more dominantly determined by the region 4a and the region 4b. Therefore, the dispersion of resistance of the chip thermistor 1 can be kept extremely small.
The present embodiment, as described above, adopts the configuration in which the unevenness is formed by the grooves 11. This allows us to appropriately and easily obtain the configuration in which the creepage distance between the first electrode 5 and the second electrode 7 in the second direction is set to be larger than the clearance between the first electrode 5 and the second electrode 7 in the second direction. For example, the value of the resistance component of the region 4c can be readily controlled to a desired value, by the depth and the number of grooves 11 to be formed.
In the present embodiment, when viewed from the first direction, the first principal face 3a is located inside the outer contour line of the second principal face 3b and the first and second electrodes 5, 7 are located inside the outer contour line of the third electrode 9. Because of this configuration, there is no variation in the overlapping area between the first electrode 5 and the third electrode 9 and in the overlapping area between the second electrode 7 and the third electrode 9 even if the first and second electrodes 5, 7 have some positional deviation. Therefore, the positional deviation does not lead to dispersion of the characteristics of the chip thermistor 1.
In the present embodiment, the third electrode 9 functions as a heat radiation member. When the thermistor element body 3 generates heat, the generated heat is dissipated through the third electrode 9. For this reason, it becomes feasible to set the rated electric power of the chip thermistor 1 high and to prevent self-heating of the chip thermistor 1 (thermistor element body 3). When the self-heating of the chip thermistor 1 is prevented, the chip thermistor 1 improves its temperature measurement accuracy.
Next, a modification example of the chip thermistor 1 according to the present embodiment will be described with reference to
In the present modification example, the grooves 11 are formed respectively along mutually opposed long sides of the first and second electrodes 5, 7. In the present modification example, the number of grooves 11 is 2. In the present modification example, the creepage distance between the first electrode 5 and the second electrode 7 in the second direction is also set to be larger than the clearance between the first electrode 5 and the second electrode 7 in the second direction because of the grooves 11. Therefore, the dispersion of resistance of the chip thermistor 1 can be kept extremely small.
Next, another modification example of the chip thermistor 1 according to the present embodiment will be described with reference to
In the present modification example, the surface of the region between the first electrode 5 and the second electrode 7 on the first principal face 3a is roughened by a blasting process or by a laser irradiation process. This process forms irregular unevenness 31 in the region between the first electrode 5 and the second electrode 7 on the first principal face 3a. In the present modification example, the creepage distance between the first electrode 5 and the second electrode 7 in the second direction is also set to be larger than the clearance between the first electrode 5 and the second electrode 7 in the second direction. Therefore, the dispersion of resistance of the chip thermistor 1 is kept extremely small.
The above described the preferred embodiment of the present invention, and it should be noted that the present invention is by no means intended to be limited to the foregoing embodiment and can be modified in many ways without departing from the spirit and scope of the invention.
The composition of the thermistor element body 3 does not have to be limited to the aforementioned composition. The thermistor element body 3 may have, for example, a composition containing BaTiO3 as a major component and containing a rare earth and a metal oxide of Pb, Sr, or the like as minor components.
The third electrode 9 may be covered by a material having an electrical insulation property (e.g., glass containing SiO2 or insulating resin such as polyimide resin). In this case, the third electrode 9 is prevented from touching another component to cause a short circuit or the like. When the material with the electrical insulation property used herein is the glass containing SiO2 or the insulating resin, it does not hinder the function as the heat radiation member.
The first and second electrodes 5, 7 are formed by the cutting of the electrode 23 in conjunction with the formation of grooves 11, 25, but the method of forming them is not limited to this method. The first and second electrodes 5, 7 may be formed by preliminarily patterning them on the first principal face 21a of the thermistor substrate 21.
The unevenness does not always have to be formed in the region between the first electrode 5 and the second electrode 7 on the first principal face 3a. When the unevenness is formed, the creepage distance between the first electrode 5 and the second electrode 7 in the second direction is set to be larger than the clearance between the first electrode 5 and the second electrode 7 in the second direction. Therefore, the unevenness is preferably formed in the foregoing region in that the dispersion of resistance of the chip thermistor 1 can be kept extremely small. The number and depth of grooves 11 are not limited to the aforementioned values.
The thermistor substrate 21 with the grooves 11, 25 formed therein is cut at the positions where the grooves 25 are formed, from the first principal face 21a side, but the cutting does not have to be limited to this method. For example, the thermistor substrate 21 with the grooves 11, 25 formed therein may be cut at the positions where the grooves 25 are formed, from the second principal face 21b side. Another available method is such that, after the formation of the grooves 11 in the thermistor substrate 21, the thermistor substrate 21 is cut from the first principal face 21a side or from the second principal face 21b side.
In the present embodiment, when viewed from the first direction, the first principal face 3a is located inside the outer contour line of the second principal face 3b and the first and second electrodes 5, 7 are located inside the outer contour line of the third electrode 9, but the present invention is not limited to this example. For example, as shown in
The below will describe an example of a manufacturing process of the chip thermistor 1 shown in
The thermistor substrate 21 with the grooves 11 formed therein is cut, as shown in
The above embodiments and modification examples described the examples of NTC thermistors as chip thermistors 1, but the present invention is not limited to them. The present invention may be applied to other chip thermistors such as PTC (Positive Temperature Coefficient) thermistors.
The present invention is applicable to the chip thermistors.
1 . . . chip thermistor; 3 . . . thermistor element body; 3a . . . first principal face; 3b . . . second principal face; 5 . . . first electrode; 7 . . . second electrode; 9 . . . third electrode; 11 . . . grooves; 21 . . . thermistor substrate; 21a . . . first principal face; 21b . . . second principal face; 23, 24 . . . electrodes; 25 . . . grooves.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2010-260187 | Nov 2010 | JP | national |
| Filing Document | Filing Date | Country | Kind | 371c Date |
|---|---|---|---|---|
| PCT/JP2011/073962 | 10/18/2011 | WO | 00 | 5/9/2013 |
