This application claims the benefit of priority of Singapore patent application No. 201106089-4, filed 23 Aug. 2011, the content of it being hereby incorporated by reference in its entirety for all purposes.
Various embodiments relate to a circuit arrangement, and a receiver including the circuit arrangement.
Reducing power consumption is always of the essence to ubiquitous wireless communication. For a low activity rate system, the natural method to take this advantage is duty-cycling turning on and off the device to reduce average power consumption so as to increase the battery life time by orders of magnitude. Following this trend, an always-on wake-up receiver (WuRx) 100, as shown in
This auxiliary receiver, in the form of the wake-up receiver (WuRx) 100, breaks the trade-off between latency and average power consumption with only one receiver existing. Because the WuRx 100 is continuously monitoring the channel, its active power consumption must be very low. For those transceiver architectures that offer high efficiency communication but suffer from long synchronization time, such as radio-frequency identification (RFID), ultra-wideband (UWB) and electronic toll collection (ETC), WuRx are good candidates for wake-up based synchronization.
The early days' receiver was very simple, such as AM receivers, and can be implemented with an antenna, radio-frequency (RF) amplification and a nonlinear envelope detector to demodulate the signal. There are no power hungry local oscillators and mixers, which are found on the RF signal path, altogether in the frequency conversion counterpart nowadays. The envelope detector, usually implemented with a diode, is a popular choice because of its low power consumption. Envelope detectors have the inherent disadvantage of their quadratic nonlinearity that means a factor two drop in efficiency. Each drop of 10 dB in the input RF amplitude will result in a drop of 20 dB in the demodulated amplitude. This nature limits the sensitivity of the detector and of the overall receiver, owing to the signal dependent gain of the envelope detector. Indeed, the detector is the bottleneck of the receiver's sensitivity since it attenuates low level input signal and adds excessive noise. Not only high gain amplification for sensitivity but also narrowband filtering at RF for selectivity are required to overcome this limitation. However, the addition of RF gain stage is expensive from a power perspective. For example, more than 80% of the total receiver power is consumed at the gain stages, by the low noise amplifier (LNA), followed by the antenna and the channel-select amplifiers. The power breakdown illustrates the critical problem that large amounts of power are required at the RF gain stage. This prohibits further reduction in power consumption if the gain stage at higher carrier frequency is mandatory in certain applications.
There is another simple and low power wireless receiver candidate, a passive RFID tag, which does not even have a power supply. The RFID tag is inactive until it rectifies the remote RF energy from the reader to power up its own electronics and then to decode an incoming signal. In this way, the operation of the tag is very similar to the desired functionality of the WuRx. However, the rectifier has several drawbacks. The two main loss factors are from the threshold voltage of MOS diode and input parasitic capacitance of the rectifier. Hence, the communication range for the passive RFID tag is short, usually in the range of couples of centimeters, and the sensitivity is limited, at about −25.7 dBm on a 300 ohms antenna in the 2.4 GHz band. Although the RFID tag receiver features attractively low power consumption, a practical WuRx design will require much improvement to overcome the above addressed sensitivity and selectivity limitation.
Therefore, simple RFID receivers design does not satisfy the requirement for WuRx due to its low sensitivity, while conventional frequency conversion architectures are inherently too complicated and limited by power consumption. Clearly, the feasibility of implementing a WuRx receiver at high frequencies with low power dissipation represents a significant challenge.
According to an embodiment, a circuit arrangement is provided. The circuit arrangement may include a first input terminal and a second input terminal, a first transistor and a second transistor, each of the first transistor and the second transistor having a first controlled terminal, a second controlled terminal and a control terminal, the first controlled terminal of the first transistor being coupled to the first controlled terminal of the second transistor, the control terminal of the first transistor being coupled to the first input terminal, the control terminal of the second transistor being coupled to the second input terminal, and the second controlled terminal of the first transistor being coupled to the second controlled terminal of the second transistor, an input matching circuit coupled to the first input terminal, the second input terminal, the first transistor and the second transistor, a first resistive element coupled between the control terminal of the first transistor and the second controlled terminal of the first transistor, a second resistive element coupled between the control terminal of the second transistor and the second controlled terminal of the second transistor, and an output terminal coupled to the second controlled terminal of the first transistor and the second controlled terminal of the second transistor, wherein the input matching circuit includes a first inductor, a second inductor, a third inductor, a first capacitor and a second capacitor, wherein the first inductor is coupled between the first input terminal and the control terminal of the first transistor, wherein the second inductor is coupled between the first controlled terminal of the first transistor and the first controlled terminal of the second transistor, wherein the third inductor is coupled between the second input terminal and the control terminal of the second transistor, wherein the first capacitor is coupled between the control terminal of the first transistor and the first controlled terminal of the first transistor, and wherein the second capacitor is coupled between the control terminal of the second transistor and the first controlled terminal of the second transistor.
According to an embodiment, a circuit arrangement is provided. The circuit arrangement may include a first input terminal and a second input terminal, a first transistor and a second transistor, each of the first transistor and the second transistor having a first controlled terminal, a second controlled terminal and a control terminal, the first controlled terminal of the first transistor being coupled to the first controlled terminal of the second transistor, the control terminal of the first transistor being coupled to the first input terminal, the control terminal of the second transistor being coupled to the second input terminal, and the second controlled terminal of the first transistor being coupled to the second controlled terminal of the second transistor, a third transistor and a fourth transistor, each of the third transistor and the fourth transistor having a first controlled terminal, a second controlled terminal and a control terminal, the first controlled terminal of the third transistor being coupled to the first controlled terminal of the fourth transistor, the control terminal of the third transistor being coupled to the first input terminal, the control terminal of the fourth transistor being coupled to the second input terminal, and the second controlled terminal of the third transistor being coupled to the second controlled terminal of the fourth transistor, an input matching circuit coupled to the first input terminal, the second input terminal, the first transistor, the second transistor, the third transistor and the fourth transistor, a first resistive element coupled between the control terminal of the first transistor and the second controlled terminal of the first transistor, a second resistive element coupled between the control terminal of the second transistor and the second controlled terminal of the second transistor, a third resistive element coupled between the control terminal of the third transistor and the second controlled terminal of the third transistor, a fourth resistive element coupled between the control terminal of the fourth transistor and the second controlled terminal of the fourth transistor, a first output terminal coupled to the second controlled terminal of the first transistor and the second controlled terminal of the second transistor, and a second output terminal coupled to the second controlled terminal of the third transistor and the second controlled terminal of the fourth transistor, wherein the input matching circuit includes a first inductor, a second inductor, a third inductor, a first capacitor, a second capacitor, a third capacitor and a fourth capacitor, wherein the first inductor includes a first terminal coupled to the first input terminal, and a second terminal coupled to the control terminal of the first transistor and the control terminal of the third transistor, wherein the second inductor includes a first terminal coupled to the first controlled terminal of the first transistor, the first controlled terminal of the second transistor, the first controlled terminal of the third transistor and the first controlled terminal of the fourth transistor, wherein the third inductor includes a first terminal coupled to the control terminal of the second transistor and the control terminal of the fourth transistor, and a second terminal coupled to the second input terminal, wherein the first capacitor is coupled between the control terminal of the first transistor and the first controlled terminal of the first transistor, wherein the second capacitor is coupled between the control terminal of the second transistor and the first controlled terminal of the second transistor, wherein the third capacitor is coupled between the control terminal of the third transistor and the first controlled terminal of the third transistor, and wherein the fourth capacitor is coupled between the control terminal of the fourth transistor and the first controlled terminal of the fourth transistor.
According to an embodiment, a receiver including the circuit arrangement as described herein is provided.
In the drawings, like reference characters generally refer to the same parts throughout the different views. The drawings are not necessarily to scale, emphasis instead generally being placed upon illustrating the principles of the invention. In the following description, various embodiments of the invention are described with reference to the following drawings, in which:
The following detailed description refers to the accompanying drawings that show, by way of illustration, specific details and embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. Other embodiments may be utilized and structural, logical, and electrical changes may be made without departing from the scope of the invention. The various embodiments are not necessarily mutually exclusive, as some embodiments can be combined with one or more other embodiments to form new embodiments.
Embodiments described in the context of one of the devices are analogously valid for the other device.
Features that are described in the context of an embodiment may correspondingly be applicable to the same or similar features in the other embodiments. Features that are described in the context of an embodiment may correspondingly be applicable to the other embodiments, even if not explicitly described in these other embodiments. Furthermore, additions and/or combinations and/or alternatives as described for a feature in the context of an embodiment may correspondingly be applicable to the same or similar feature in the other embodiments.
In the context of various embodiments, the phrase “at least substantially” may include “exactly” and a variance of +/−5% thereof. As an example and not limitations, “A is at least substantially same as B” may encompass embodiments where A is exactly the same as B, or where A may be within a variance of +/−5%, for example of a value, of B, or vice versa.
In the context of various embodiments, the term “about” or “approximately” as applied to a numeric value encompasses the exact value and a variance of +/−5% of the value.
As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.
Various embodiments may provide an approach based on an envelope detector with improved sensitivity and selectivity, without or with reduced at least some of the disadvantages of the prior art.
Various embodiments may provide circuit arrangements for active radio frequency (RF) detectors (e.g. envelope detectors). Various embodiments also provide an architecture, including a circuit arrangement, for wake-up receivers. The architecture includes an RF detector. The architecture may also include a continuous-time oversampling sigma-delta analogue-to-digital converter (CT ΣΔ ADC).
Various embodiments may provide an active radio frequency (RF) detector in an ultra-low power wake-up receiver (WuRx), for example for applications including electronic toll collection (ETC) systems. The receiver or transceiver may be utilized at the RF front-ends, employing a 5.8 GHz carrier frequency and an on-off keyed (OOK) modulation in wake-up requests. Other amplitude modulations such as amplitude-shift keying (ASK) may be employed. The receiver or transceiver may be designed for a sensitivity of about −70 dBm, operating at data rates up to 100 kbps, with a power consumption within 10 μW. However, it should be appreciated that other specifications and implementations of the RF detector and the WuRx may be possible, depending on the applications. As a further example, the WuRx of various embodiments may be employed as a universal remote control for existing receivers. In addition, the WuRx of various embodiments may be employed in wireless sensor networks or wireless communication systems. It should be appreciated that the WuRx of various embodiments may be employed in various applications which require μW-class power consumption.
Although other modulation methods such as frequency or phase modulation may provide better link efficiency, amplitude modulations such as the OOK allows substantial simplification of the RF demodulation, resulting in large power savings compared to more complex methods. Where a forward error correction (FEC) based correlation is also employed, a better robustness of the wake-up link may be achieved with minimum power overhead.
The circuit arrangement 200 further includes a first resistive element 216 (e.g. Rf1430,
The input matching circuit 214 of the circuit arrangement 200 includes a first inductor 222 (e.g. Lg1410,
In other words, the circuit arrangement 200 includes a pair of input terminals (202, 204), a pair of transistors (e.g. NMOS transistors) (206a, 206b), an input matching circuit (214) (or LC network/circuit) coupled to the pair of input terminals and the pair of transistors, a pair of resistive elements (216, 218) and an output terminal (220).
Each of the pair of transistors includes a first controlled terminal, a second controlled terminal and a control terminal, where the first controlled terminals of the pair of transistors are coupled to each other, the second controlled terminals of the pair of transistors are coupled to each other, the control terminal of one of the transistors is coupled to one of the input terminals, and the control terminal of the other transistor is coupled to the other input terminal. One of the resistive elements is coupled to the control terminal and the second controlled terminal of one transistor, while the other resistive element is coupled to the control terminal and the second controlled terminal of the other transistor. The output terminal is coupled to the second controlled terminals of the pair of transistors.
The input matching circuit includes a first inductor coupled to one input terminal and the control terminal of one transistor, a second inductor coupled to the first controlled terminals of the pair of transistors, a third inductor coupled to the other input terminal and the control terminal of the other transistor, a first capacitor coupled to the control terminal and the first controlled terminal of one transistor, and a second capacitor coupled to the control terminal and the first controlled terminal of the other transistor.
In
In various embodiments, the circuit arrangement 200 may further include a third capacitor (e.g. C1420,
In various embodiments, the first resistive element 216 (e.g. Rf1430,
In various embodiments, the second resistive element 218 (e.g. Rf2432,
In various embodiments, the circuit arrangement 200 may further include a current mirror circuit coupled to the second controlled terminal 210a of the first transistor 206a, the second controlled terminal 210b of the second transistor 206b, and the output terminal 220. The current mirror circuit may include a seventh transistor (e.g. MP2462a,
In various embodiments, the circuit arrangement 200 may further include a current source (e.g. 470,
In various embodiments, the circuit arrangement 200 may further include a fifth capacitor (e.g. Co 454,
In various embodiments, the second inductor may be further coupled to the second voltage reference point.
In the context of various embodiments of the circuit arrangement 200, the first voltage reference point may be a power supply line. In the context of various embodiments, the second voltage reference point may be a ground terminal.
In the context of various embodiments, the circuit arrangement 200 may include, may be part of or may be an envelope detector. The envelope detector or RF detector may be part of a receiver (e.g. wake-up receiver).
Various embodiments may provide a receiver including the circuit arrangement 200 as described above. The receiver may be or may include a wake-up receiver.
Various embodiments may provide a transceiver including the circuit arrangement 200 as described above. The transceiver may include a receiver (e.g. a wake-up receiver) having the circuit arrangement 200.
The circuit arrangement 240 further includes a third transistor 254a (e.g. MP11124a,
The circuit arrangement 240 further includes an input matching circuit 262 coupled to the first input terminal 242, the second input terminal 244, the first transistor 246a, the second transistor 246b, the third transistor 254a and the fourth transistor 254b.
The circuit arrangement 240 further includes a first resistive element 264 (e.g. Rf11132,
The circuit arrangement 240 further includes a first output terminal 272 (e.g. 1182,
The input matching circuit 262 of the circuit arrangement 240 includes a first inductor 276 (e.g. Lg11110,
In other words, the circuit arrangement 240 includes a pair of input terminals (242, 244), a first pair of transistors (e.g. NMOS transistors) (246a, 246b), a second pair of transistors (e.g. PMOS transistors) (254a, 254b), an input matching circuit (262) (or LC network/circuit) coupled to the pair of input terminals, the first pair of transistors and the second pair of transistors, four resistive elements (264, 266, 268, 270) and a pair of output terminals (272, 274).
Each transistor of the first pair of transistors includes a first controlled terminal, a second controlled terminal and a control terminal, where the first controlled terminals of the first pair of transistors are coupled to each other, the second controlled terminals of the first pair of transistors are coupled to each other, the control terminal of one of the transistors is coupled to one of the input terminals, and the control terminal of the other transistor is coupled to the other input terminal.
Each transistor of the second pair of transistors includes a first controlled terminal, a second controlled terminal and a control terminal, where the first controlled terminals of the second pair of transistors are coupled to each other, the second controlled terminals of the second pair of transistors are coupled to each other, the control terminal of one of the transistors is coupled to one of the input terminals, and the control terminal of the other transistor is coupled to the other input terminal.
A first resistive element of the four resistive elements is coupled to the control terminal and the second controlled terminal of one transistor of the first pair of transistors. A second resistive element coupled to the control terminal and the second controlled terminal of the other transistor of the first pair of transistors. A third resistive element is coupled to the control terminal and the second controlled terminal of one transistor of the second pair of transistors. A fourth resistive element is coupled to the control terminal and the second controlled terminal of the other transistor of the second pair of transistors.
One of the output terminals is coupled to the second controlled terminals of the first pair of transistors, while the other output terminal is coupled to the second controlled terminals of the second pair of transistors.
The input matching circuit includes a first inductor coupled to one input terminal, the control terminal of one transistor of the first pair of transistors and the control terminal of one transistor of the second pair of transistors, a second inductor coupled to the first controlled terminals of the first and second pairs of transistors, a third inductor coupled to the other input terminal, the control terminal of the other transistor of the first pair of transistors and the control terminal of the other transistor of the second pair of transistors, a first capacitor coupled to the control terminal and the first controlled terminal of one transistor of the first pair of transistors, a second capacitor coupled to the control terminal and the first controlled terminal of the other transistor of the first pair of transistors, a third capacitor coupled to the control terminal and the first controlled terminal of one transistor of the second pair of transistors, and a fourth capacitor coupled to the control terminal and the first controlled terminal of the other transistor of the second pair of transistors.
In
In various embodiments, the input matching circuit 262 may further include a fifth capacitor (e.g. Cs 1117,
In various embodiments, the circuit arrangement 240 may further include a sixth capacitor (e.g. C11178,
In various embodiments, the first resistive element 264 (e.g. Rf11132,
In various embodiments, the second resistive element 266 (e.g. Rf21134,
In various embodiments, the third resistive element 268 (e.g. Rf31136,
In various embodiments, the fourth resistive element 270 (e.g. Rf41138,
In various embodiments, the circuit arrangement 240 may further include a current source (e.g. 1186,
In various embodiments, the circuit arrangement 240 may further include a tenth capacitor (e.g. Con 1188,
In various embodiments, the circuit arrangement 240 may further include a resistor (e.g. RREF 1190,
In various embodiments, the circuit arrangement 240 may further include an eleventh capacitor (e.g. Cop 1192,
In the context of various embodiments of the circuit arrangement 240, the first voltage reference point may be a ground terminal. In the context of various embodiments, the second voltage reference point may be a power supply line.
In the context of various embodiments, the circuit arrangement 240 may include, may be part of or may be an envelope detector. The envelope detector or RF detector may be part of a receiver (e.g. wake-up receiver).
Various embodiments may provide a receiver including the circuit arrangement 240 as described above. The receiver may be or may include a wake-up receiver.
Various embodiments may provide a transceiver including the circuit arrangement 240 as described above. The transceiver may include a receiver (e.g. a wake-up receiver) having the circuit arrangement 240.
In the context of various embodiments, each of the first transistor (e.g. 206a, 246a) and the second transistor (e.g. 206b, 246b) may be or may include an n-type metal oxide semiconductor field effect transistor (e.g. NMOS transistor).
In the context of various embodiments, each of the third transistor (e.g. 254a) and the fourth transistor (e.g. 254b) may be or may include a p-type metal oxide semiconductor field effect transistor (e.g. PMOS transistor).
In the context of various embodiments, each of the fifth transistor and the sixth transistor may be or may include a p-type metal oxide semiconductor field effect transistor (e.g. PMOS transistor).
In the context of various embodiments, each of the seventh transistor and the eighth transistor may be or may include a p-type metal oxide semiconductor field effect transistor (e.g. PMOS transistor).
In the context of various embodiments, each of the ninth transistor and the tenth transistor may be or may include a p-type metal oxide semiconductor field effect transistor (e.g. PMOS transistor).
In the context of various embodiments, each of the eleventh transistor and the twelfth transistor may be or may include a p-type metal oxide semiconductor field effect transistor (e.g. PMOS transistor).
In the context of various embodiments, the term “transistor” may include a field effect transistor (FET), such as one of a metal oxide semiconductor field effect transistor (MOSFET) (e.g. an n-channel MOS transistor (NMOS), a p-channel MOS transistor (PMOS)), a metal-insulator field effect transistor (MISFET) or a metal-semiconductor field effect transistor (MESFET).
In the context of various embodiments, the term “controlled terminal” may include or may mean a “source/drain terminal”, such that the term “first controlled terminal” may mean a “first source/drain terminal” and the term “second controlled terminal” may mean a “second source/drain terminal”.
In the context of various embodiments, the terms “controlled terminal” or “source/drain terminal” of a transistor may refer to a source terminal or a drain terminal. As the source terminal and the drain terminal of a transistor are generally fabricated such that these terminals are geometrically symmetrical, these terminals may be collectively referred to as controlled terminals or source/drain terminals. In various embodiments, a particular controlled terminal or source/drain terminal may be a “source” terminal or a “drain” terminal depending on the voltage to be applied to that terminal.
In the context of various embodiments, the term “control terminal” may include or may mean a gate terminal.
In the context of various embodiments, the term “bulk terminal” may mean a substrate terminal for N-channel MOS transistors and a well terminal for P-channel MOS transistors.
In the context of various embodiments, the term “matching circuit” may include or may mean an impedance matching circuit that at least substantially matches the impedance of one part of a circuit (e.g. a source) with the impedance of another part of the circuit (e.g. a load) so as to maximize the power transfer between the two parts of the circuit or minimize reflections from the load. The matching circuit may include one or more inductors (L) and/or one or more capacitors (C). Therefore, the matching circuit may be an LC circuit.
In the context of various embodiments, the term “envelope detector” may include or may mean a circuit that receives an input signal and provides an output which is the envelope of the input signal.
In the context of various embodiments, the term “current source” may include, for example, a direct or indirect current source, or a current mirror, or a constant or variable current source, or a voltage bias.
In the context of various embodiments, the term “current mirror circuit” may mean a circuit that serves as a current regulator, where the current flowing in one half or branch of the circuit is used to control the current flow in the other half or branch of the circuit. The current amplitude flowing through both halves or branches is at least substantially same.
In the context of various embodiments, a reference to the term “coupled” with regard to two or more components may include a reference to “directly coupled” or “indirectly coupled”, e.g. including one or more other components (e.g. resistor and/or inductor and/or capacitor) connected therebetween the two or more components.
In the context of various embodiments, the term “coupled” may include electrical coupling and/or mechanical coupling.
The wake-up receiver (WuRx) 300 may receive an on-off keying (OOK) input signal (e.g. a 5.8 GHz RF input signal) from an antenna (e.g. a 50Ω antenna) 312, in which the input signal passes through the bandpass filter 302 for obtaining the desired RF band. The bandpass filter 302 is collaborated with the RF detector 304, which may be co-design with an input matching network or circuit, in which the analog front-end or the RF detector 304 converts the OOK input signal directly into baseband signals. The baseband signals are amplified with programmable gain and lowpass filtered with variable bandwidth, by the PGA/LPF block 306, and digitized by the CT ΣΔ ADC 308 to reduce noise of the circuit or system. The CT ΣΔ ADC 308 oversamples the wake-up request signals to increase the signal to noise ratio (SNR). The output of the ADC 308 is digitally processed by the signal processing circuit 310, which may include a decimation filter and an error correction correlation receiver, to generate wake-up requests or signals. Therefore, the digital back-end processing is compliant with decimation filters.
The circuit arrangement 400 includes transistors (e.g. NMOS transistors) MN1402a and MN2402b, which form a pseudo-differential pair to sense differential inputs VRF+404, VRF−405, received through a “positive” input terminal 406 and a “negative” input terminal 408, which are robust to common mode noise, and which are matched to an antenna (e.g. 312,
The circuit arrangement 400 includes a capacitor C1420 coupled in series with the input terminal 406 and the inductor Lg1410 (e.g. coupled between the input terminal 406 and the inductor Lg1410), and a capacitor C2422 coupled in series with the input terminal 408 and the inductor Lg2414 (e.g. coupled between the second input terminal 204 and the third inductor 226 the input terminal 408 and the inductor Lg2414).
The transistor MN1402a includes a first controlled terminal (e.g. source terminal) 424a, a second controlled terminal (e.g. drain terminal) 426a and a control terminal (e.g. gate terminal) 428a, and the transistor MN2402b includes a first controlled terminal (e.g. source terminal) 424b, a second controlled terminal (e.g. drain terminal) 426b and a control terminal (e.g. gate terminal) 428b.
The first controlled terminals 424a, 424b are coupled to each other. The second controlled terminals 426a, 426b are coupled to each other. The control terminal 428a is coupled to the input terminal 406 and the control terminal 428b is coupled to the input terminal 408. The control terminal 428a is also coupled to the inductor Lg1410 and the capacitor C1420. The control terminal 428b is also coupled to the inductor Lg2414 and the capacitor C2422.
As illustrated in
The circuit arrangement 400 further includes a resistive element Rf1430 coupled between the control terminal 428a and the second controlled terminal 426a, and a resistive element Rf2432 coupled between the control terminal 428b and the second controlled terminal 426b. The resistive element Rf1430 and the resistive element Rf2432 may be at least substantially same.
The resistive element Rf1430 includes transistors (e.g. PMOS transistors) MPR1434a and MPR2434b. The transistor MPR1434a includes a first controlled terminal (e.g. source terminal) 436a, a second controlled terminal (e.g. drain terminal) 438a, a control terminal (e.g. gate terminal) 440a, and a bulk terminal 441a, and the transistor MPR2434b includes a first controlled terminal (e.g. source terminal) 436b, a second controlled terminal (e.g. drain terminal) 438b, a control terminal (e.g. gate terminal) 440b, and a bulk terminal 441b.
The first controlled terminals 436a, 436b are coupled to each other. The second controlled terminal 438a of the transistor MPR1434a is coupled to the control terminal 428a of the transistor MN1402a. The second controlled terminal 438b of the transistor MPR2434b is coupled to the second controlled terminal 426a of the transistor MN1402a. The bulk terminal 441a is coupled to the second controlled terminal 438a. The bulk terminal 441b is coupled to the second controlled terminal 438b. The control terminals 440a, 440b are coupled to each other and also coupled to the first controlled terminals 436a, 436b.
The resistive element Rf2432 includes transistors (e.g. PMOS transistors) MPR3442a and MPR4442b. The transistor MPR3442a includes a first controlled terminal (e.g. source terminal) 444a, a second controlled terminal (e.g. drain terminal) 446a, a control terminal (e.g. gate terminal) 448a, and a bulk terminal 450a, and the transistor MPR4442b includes a first controlled terminal (e.g. source terminal) 444b, a second controlled terminal (e.g. drain terminal) 446b, a control terminal (e.g. gate terminal) 448b, and a bulk terminal 450b.
The first controlled terminals 444a, 444b are coupled to each other. The second controlled terminal 446a of the transistor MPR3442a is coupled to the second controlled terminal 426b of the transistor MN2402b. The second controlled terminal 446b of the transistor MPR4442b is coupled to the control terminal 428b of the transistor MN2402b. The bulk terminal 450a is coupled to the second controlled terminal 446a. The bulk terminal 450b is coupled to the second controlled terminal 446b. The control terminals 448a, 448b are coupled to each other and also coupled to the first controlled terminals 444a, 444b.
It should be appreciated that any one or each of the resistive element Rf1430 and resistive element Rf2432 may also be at least substantially same, for example in terms of the arrangements of the PMOS transistors, as any one of the resistive element Rf11132 (
The circuit arrangement 400 further includes an output terminal 452, from which an output signal (e.g. a baseband signal) Vout 453 may be extracted, coupled to the second controlled terminals 426a, 426b. The circuit arrangement 400 may further include a capacitor Co 454, wherein a first terminal of the capacitor Co 454 is coupled to the second controlled terminals 426a, 426b, and the output terminal 452, and a second terminal of the capacitor Co 454 is coupled to a voltage reference point V2, which may be a ground terminal.
The circuit arrangement 400 may further include a current mirror circuit 460 coupled to the second controlled terminal 426a of the transistor MN1402a, the second controlled terminal 426b of the MN2402b, and the output terminal 452.
The current mirror circuit includes transistors (e.g. PMOS transistors) MP2462a and MP1462b. The transistor MP2462a includes a first controlled terminal (e.g. source terminal) 464a, a second controlled terminal (e.g. drain terminal) 466a, and a control terminal (e.g. gate terminal) 468a, and the transistor MP1462b includes a first controlled terminal (e.g. source terminal) 464b, a second controlled terminal (e.g. drain terminal) 466b, and a control terminal (e.g. gate terminal) 468b.
Each of the first controlled terminals 464a, 464b is coupled to a voltage reference point V1, which may be a power supply line. The control terminals 468a, 468b are coupled to each other. The second controlled terminal 466a of the transistor MP2462a is coupled to the second controlled terminal 426a of the transistor MN1402a, the second controlled terminal 426b of the transistor MN2402b and the output terminal 452. The second controlled terminal 466a is also coupled to the first terminal of the capacitor Co 454. The second controlled terminal 466b of the transistor MP1462b is coupled to the control terminals 468a, 468b.
The circuit arrangement 400 further includes a current source 470 providing a current Id, wherein a first terminal of the current source 470 is coupled to the control terminals 468a, 468b and the second controlled terminal 466b of the transistor MP1462b, and a second terminal of the current source 470 is coupled to a voltage reference point V2, which may be a ground terminal.
The gates or control terminals 428a, 428b of the transistors MN1402a and MN2402b are biased via the pseudo-resistors or resistive elements Rf1430 and Rf2432, respectively. Such an arrangement may keep or maintain the average drain current of the of the transistors MN1402a and MN2402b equal to approximately half of the bias current, Id, of the current source 470. The bias current Id may be chosen to be low, thereby maintaining the gate voltage just above the threshold voltage, Vth, of the transistors MN1402a and MN2402b.
The transistors MP2462a and MP1462b function to provide the bias current mirror, whereby the bias current Id provided by the current source 470 in a branch of the current mirror circuit 460 associated with the transistor MP1462b, is mirrored or reproduced as substantially Id in another branch of the current mirror circuit 460 associated with the transistor MP2462a to be supplied to the transistors MN1402a and MN2402b.
The capacitors C1420 and C2422 provide direct current (DC) blocking from the respective input terminals 406, 408, and therefore their capacitance should be large compared to the gate capacitance of the transistors MN1402a and MN2402b in order to obtain maximum voltage swing at the respective control terminals 428a, 428b. The capacitor Co 454 acts to sustain the output voltage and may work as part of the low pass filter (e.g. 306) with an output resistance.
The circuit arrangement 400 provides a single-ended output, via the output terminal 452, so as to reduce the circuit complexity for low power considerations.
In various embodiments, using the transistor MN1402a as a non-limiting example, when the signal amplitude at the input terminal 406 is low, the DC behaviour of the transistor MN1402a biased via the resistive element Rf1430 is at least substantially similar to a diode connected NMOS. The output voltage Vout 453 is just above the threshold voltage. The DC biasing condition for the transistor MN1402a is at least substantially similar to a zero Vth (turn-on voltage) diode. Therefore, the circuit arrangement 400 or a detector including the circuit arrangement 400, includes an equivalent zero-Vth diode configuration, which may alleviate the threshold voltage loss that is present in conventional detectors.
As the signal amplitude increases, the detector enters a strongly nonlinear regime. The transistor MN1402a conducts most current when the gate voltage is above a threshold voltage, Vth. Since the drain current is limited by Id, the transistor MN1402a discharges the capacitor Co 454 and lowers the gate voltage until the average drain current through the transistor MN1402a is at least substantially equal to Id. If the drain current is large compared to the bias current Id when the transistor MN1402a is conducting, the transistor MN1402a only conducts in certain periods or durations. The output voltage Vout 453 then drops proportionally to the input peak amplitude, providing a detector gain of −1 V/V. The detector output voltage Vout 453 may then be described according to
where A is the peak amplitude of a sinusoidal waveform input signal (e.g. input signal, VRF=A sin(ωt)), W and L are the transistor width and length and μn (electron mobility), Cox (gate oxide capacitance per unit area) and Vth (transistor threshold voltage) are process dependent device parameters.
The currents in the transistors MN1402a and MN2402b may be limited and the detector gain may be slightly lower. In addition, the resistive elements Rf1430 and Rf2432 are chosen to be relatively large to provide DC biasing at the respective control terminals 428a, 428b, and a small AC gain from the respective gates or control terminals 428a, 428b to the respective drains or second controlled terminals 426a, 426b. For each of the resistive elements Rf1430 and Rf2432, two diode connected PMOS in series, transistors MPR1434a, MPR2434b and transistors MPR3442a, MPR4442b, constitute pseudo resistors to serve as mega-ohms resistors without loading the output, and providing DC biasing at the control terminals (gate) 428a, 428b, with small parasitic effects (e.g. parasitic capacitance).
In general, the higher carrier frequency a detector uses, the more power burden it suffers in the RF gain amplification. A detector (e.g. envelope detector) employing the circuit arrangement 400 may be advantageously carrier frequency insensitive.
In order to provide good selectivity to out-of-band noise and interferences, a LC matching network or circuit of the inductors Lg1410, Ls 412, Lg2414, and the capacitors Cex1416 and Cex2418 as described in the context of the circuit arrangement 400 may be provided. The capacitors Cex1416 and Cex2418 are added to provide additional design freedom. The LC matching network may supply a stable impedance match to a 50 ohms input source and also provides a narrow RF filter (e.g. 302,
where Cgs and gm are the respective parasitic gate-to-source capacitance and the transconductance of the respective transistors MN1402a, MN2402b.
An input match at the resonant frequency, ω0, is achieved by equating the real part of Zin to the source impedance, Rs, and the imaginary part to zero, as expressed respectively in Equations 3 and 4 below:
Another consideration is the output bandwidth, which is determined by the output pole. From large signal analysis, the output signal is the squared version of the input signal, and is filtered through the low pass filter formed by the detector output resistance and the capacitor Co (e.g. 454,
where gm is the transconductance of the respective transistors MN1402a, MN2402b.
This pole is designed to be low enough to filter out any signal at the fundamental and higher harmonics, while still affording enough bandwidth to avoid or minimise attenuating the baseband signal. At the output port or terminal, only low frequency components may be observed. In various embodiments, for an OOK signal, the detected baseband waveform may be a square wave with a given baseband data rate, so the detector bandwidth should be high enough to avoid filtering this desired signal.
Furthermore, in various embodiments, the transistors MN1402a, MN2402b may be sized larger in order to lower or minimise the flicker noise, if it becomes dominant in the overall receiver noise calculation.
The conversion gain of the detector (e.g. envelope detector) of various embodiments will now be described. Due to the nonlinear nature of the envelope detector, there are challenges in analyzing the linear noise figure, NF. The following provides a non-limiting example to analyze the sensitivity of an envelope detection receiver.
The first step is to determine the nonlinear response of the envelope detector. Firstly, the large signal drain current, Idc, of the transistor MN1402a in saturation with an input signal VRF=A sin(ωt) may be determined as described by:
where
which is a constant depending on the fabrication process and device size, W and L are the transistor (e.g. MN1402a) width and length, μn and Cox are process dependent device parameters, Vout is the detector output voltage, Vth is the threshold voltage (e.g. of the transistor MN1402a), Q is the quality factor of the input matching circuit, A and ω are respectively the peak amplitude and frequency of the input signal VRF, and t is time.
Next, the DC output signal current, Id,Dc, and the high order harmonic term may be filtered by the detector output pole, providing a DC output current, Id,Dc, as described by:
By re-arranging the terms in Equation 7, the DC output voltage, Vout, may be determined as
where k is the voltage conversion gain.
The voltage conversion gain, k, from the peak AC input amplitude A to output DC voltage Vout may be determined by
Expanding k in a Taylor series and focusing on the first order term, the voltage conversion gain, k, as expressed in Equation 9, may be better approximated to get the design intuition.
The sensitivity of the detector (e.g. envelope detector) of various embodiments will now be described. The ultimate sensitivity may be determined by analyzing the noise contributions and gain factors to the detector output and calculating an effective noise figure, NF, that depends on the input signal power. The noise of the envelope detector itself, due to the transistors MN1 (e.g. 402a,
where k is the Boltzmann constant, T is temperature, γ is the coefficient for MOSFET noise, gmn is the transconductance of the respective transistors MN1402a, MN2402b, gmp is the transconductance of the transistor MP2462a, and Rf is the resistance of the respective resistive elements Rf1430, Rf2432.
The total noise factor, F, of the detector may then be expressed as
where NRS is the noise from the source resistance (=4kTRs, where k is the Boltzmann constant, T is temperature, and Rs is the source resistance) and k is the conversion gain.
Due to the dependence of the conversion gain k on signal level, F increases with decreasing input power. Using NF=10 log F and the detector bandwidth BWdet as a non-limiting example, the input-referred noise, Pn,in, for the receiver in dBm may be determined by
Pn,in=−174+10 log(BWdet)+NF (Equation 12).
If the minimum signal-to-noise ratio (SNR) for reliable detection is SNRmin, the minimum detectable signal, Pmds, is the input power for which may be determined by
Pmds=Pn,in+SNRmin (Equation 13).
The relationship as described by Equation 13 may be visualized by plotting the noise power Pn,in and (Pin−SNRmin) versus Pin, where Pin is the input power, and locating the intersection.
The performance of the detector or wake-up receiver of various embodiments is summarised in Table 1. The RF detector of various embodiments may achieve high sensitivity and moderate selectivity, without RF gain amplifier stage, with a power consumption of about 10 μW or under.
The circuit arrangement 1100 includes transistors (e.g. NMOS transistors) MN11102a and MN21102b, and transistors (e.g. PMOS transistors) MP11124a and MP21124b, to provide fully-differential circuits to sense differential inputs VRF+1104, VRF−1105, received through a “positive” input terminal 1106 and a “negative” input terminal 1108, which are robust to common mode noise, and which are matched to an antenna (e.g. 312,
The transistor MN11102a includes a first controlled terminal (e.g. source terminal) 1118a, a second controlled terminal (e.g. drain terminal) 1120a and a control terminal (e.g. gate terminal) 1122a, and the transistor MN21102b includes a first controlled terminal (e.g. source terminal) 1118b, a second controlled terminal (e.g. drain terminal) 1120b and a control terminal (e.g. gate terminal) 1122b.
The first controlled terminals 1118a, 1118b are coupled to each other. The second controlled terminals 1120a, 1120b are coupled to each other. The control terminal 1122a is coupled to the input terminal 1106 and the control terminal 1122b is coupled to the input terminal 1108. The control terminal 1122a is also coupled to the inductor Lg11110, and the control terminal 1122b is also coupled to the inductor Lg21112.
The transistor MP11124a includes a first controlled terminal (e.g. source terminal) 1126a, a second controlled terminal (e.g. drain terminal) 1128a and a control terminal (e.g. gate terminal) 1130a, and the transistor MP21124b includes a first controlled terminal (e.g. source terminal) 1126b, a second controlled terminal (e.g. drain terminal) 1128b and a control terminal (e.g. gate terminal) 1130b.
The first controlled terminals 1126a, 1126b are coupled to each other. The second controlled terminals 1128a, 1128b are coupled to each other. The control terminal 1130a is coupled to the input terminal 1106 and the control terminal 1130b is coupled to the input terminal 1108. The control terminal 1130a is also coupled to the inductor Lg11110, and the control terminal 1130b is also coupled to the inductor Lg21112.
The inductor Lg11110 includes a first terminal coupled to the input terminal 1106, and a second terminal coupled to the control terminal 1122a of the transistor MN11102a and the control terminal 1130a of the transistor MP11124a. The inductor Ls 1111 includes a first terminal coupled to the first controlled terminal 1118a of the transistor MN11102a, the first controlled terminal 1118b of the transistor MN21102b, the first controlled terminal 1126a of the transistor MP11124a and the first controlled terminal 1126b of the transistor MP21124b. The inductor Lg21112 includes a first terminal coupled to the control terminal 1122b of the transistor MN21102b and the control terminal 1130b of the transistor MP21124b, and a second terminal coupled to the input terminal 1108. The capacitor Cex11113 is coupled between the control terminal 1122a and the first controlled terminal 1118a, the capacitor Cex21114 is coupled between the control terminal 1122b and the first controlled terminal 1118b, the capacitor Cex31115 is coupled between the control terminal 1130a and the first controlled terminal 1126a, and the capacitor Cex41116 is coupled between the control terminal 1130b and the first controlled terminal 1126b.
The input matching circuit may further include a capacitor Cs 1117, wherein a first terminal of the capacitor Cs 1117 is coupled to the second terminal of the inductor Ls 1111, and a second terminal of the capacitor Cs 1117 is coupled to a voltage reference point V1, which may be a ground terminal.
The circuit arrangement 1100 further includes a resistive element Rf11132 coupled between the control terminal 1122a and the second controlled terminal 1120a, a resistive element Rf21134 coupled between the control terminal 1122b and the second controlled terminal 1120b, a resistive element Rf31136 coupled between the control terminal 1130a and the second controlled terminal 1128a, and a resistive element Rf41138 coupled between the control terminal 1130b and the second controlled terminal 1128b. The resistive element Rf11132, the resistive element Rf21134, the resistive element Rf31136 and the resistive element Rf41138 may be at least substantially same.
The resistive element Rf11132 includes transistors (e.g. PMOS transistors) MPR11140a and MPR21140b. The transistor MPR11140a includes a first controlled terminal (e.g. source terminal) 1142a, a second controlled terminal (e.g. drain terminal) 1144a, a control terminal (e.g. gate terminal) 1146a, and a bulk terminal 1147a, and the transistor MPR21140b includes a first controlled terminal (e.g. source terminal) 1142b, a second controlled terminal (e.g. drain terminal) 1144b, a control terminal (e.g. gate terminal) 1146b, and a bulk terminal 1147b.
The first controlled terminals 1142a, 1142b are coupled to each other. The second controlled terminal 1144a of the transistor MPR11140a is coupled to the control terminal 1122a of the transistor MN11102a. The second controlled terminal 1144b of the transistor MPR21140b is coupled to the second controlled terminal 1120a of the transistor MN11102a. The control terminal 1146a is coupled to the second controlled terminal 1144a. The control terminal 1146b is coupled to the second controlled terminal 1144b. The bulk terminals 1147a, 1147b are coupled to each other and also coupled to the first controlled terminals 1142a, 1142b.
The resistive element Rf21134 includes transistors (e.g. PMOS transistors) MPR31148a and MPR41148b. The transistor MPR31148a includes a first controlled terminal (e.g. source terminal) 1150a, a second controlled terminal (e.g. drain terminal) 1152a, a control terminal (e.g. gate terminal) 1154a, and a bulk terminal 1156a, and the transistor MPR41148b includes a first controlled terminal (e.g. source terminal) 1150b, a second controlled terminal (e.g. drain terminal) 1152b, a control terminal (e.g. gate terminal) 1154b, and a bulk terminal 1156b.
The first controlled terminals 1150a, 1150b are coupled to each other. The second controlled terminal 1152a of the transistor MPR31148a is coupled to the second controlled terminal 1120b of the transistor MN21102b. The second controlled terminal 1152b of the transistor MPR41148b is coupled to the control terminal 1122b of the transistor MN21102b. The control terminal 1154a is coupled to the second controlled terminal 1152a. The control terminal 1154b is coupled to the second controlled terminal 1152b. The bulk terminals 1156a, 1156b are coupled to each other and also coupled to the first controlled terminals 1150a, 1150b.
The resistive element Rf31136 includes transistors (e.g. PMOS transistors) MPR51158a and MPR61158b. The transistor MPR51158a includes a first controlled terminal (e.g. source terminal) 1160a, a second controlled terminal (e.g. drain terminal) 1162a, a control terminal (e.g. gate terminal) 1164a, and a bulk terminal 1166a, and the transistor MPR61158b includes a first controlled terminal (e.g. source terminal) 1160b, a second controlled terminal (e.g. drain terminal) 1162b, a control terminal (e.g. gate terminal) 1164b, and a bulk terminal 1166b.
The first controlled terminals 1160a, 1160b are coupled to each other. The second controlled terminal 1162a of the transistor MPR51158a is coupled to the control terminal 1130a of the transistor MP11124a. The second controlled terminal 1162b of the transistor MPR61158b is coupled to the second controlled terminal 1128a of the transistor MP11124a. The control terminal 1164a is coupled to the second controlled terminal 1162a. The control terminal 1164b is coupled to the second controlled terminal 1162b. The bulk terminals 1166a, 1166b are coupled to each other and also coupled to the first controlled terminals 1160a, 1160b.
The resistive element Rf41138 includes transistors (e.g. PMOS transistors) MPR71168a and MPR81168b. The transistor MPR71168a includes a first controlled terminal (e.g. source terminal) 1170a, a second controlled terminal (e.g. drain terminal) 1172a, a control terminal (e.g. gate terminal) 1174a, and a bulk terminal 1176a, and the transistor MPR81168b includes a first controlled terminal (e.g. source terminal) 1170b, a second controlled terminal (e.g. drain terminal) 1172b, a control terminal (e.g. gate terminal) 1174b, and a bulk terminal 1176b.
The first controlled terminals 1170a, 1170b are coupled to each other. The second controlled terminal 1172a of the transistor MPR71168a is coupled to the second controlled terminal 1128b of the transistor MP21124b. The second controlled terminal 1172b of the transistor MPR81168b is coupled to the control terminal 1130b of the transistor MP21124b. The control terminal 1174a is coupled to the second controlled terminal 1172a. The control terminal 1174b is coupled to the second controlled terminal 1172b. The bulk terminals 1176a, 1176b are coupled to each other and also coupled to the first controlled terminals 1170a, 1170b.
It should be appreciated that any one or each of the resistive element Rf11132, the resistive element Rf21134, the resistive element Rf31136 and the resistive element Rf41138 may also be at least substantially same, for example in terms of the arrangements of the PMOS transistors, as any one of the resistive element Rf1430 (
The circuit arrangement 1100 may further include a capacitor C11178 coupled in series with the inductor Lg11110 and the control terminal 1122a of the transistor MN11102a (e.g. coupled between the second terminal of the inductor Lg11110 and the control terminal 1122a of the transistor MN11102a), a capacitor C21179 coupled in series with the inductor Lg21112 and the control terminal 1122b of the transistor MN21102b (e.g. coupled between the first terminal of the inductor Lg21112 and the control terminal 1122b of the transistor MN21102b), a capacitor C31180 coupled in series with the inductor Lg11110 and the control terminal 1130a of the transistor MP11124a (e.g. coupled between the second terminal of the inductor Lg11110 and the control terminal 1130a of the transistor MP11124a), and a capacitor C41181 coupled in series with the inductor Lg21112 and the control terminal 1130b of the transistor MP21124b (e.g. coupled between the first terminal of the inductor Lg21112 and the control terminal 1130b of the transistor MP21124b).
The circuit arrangement 400 further includes an output terminal 1182, from which an output signal (e.g. a baseband signal) Von 1183 may be extracted, coupled to the second controlled terminal 1120a of the transistor MN11102a and the second controlled terminal 1120b of the transistor MN21102b.
The circuit arrangement 400 further includes an output terminal 1184, from which an output signal (e.g. a baseband signal) Vop 1185 may be extracted, coupled to the second controlled terminal 1128a of the transistor MP11124a and the second controlled terminal 1128b of the transistor MP21124b.
The circuit arrangement 1100 may further include a current source 1186 providing a current IREF, wherein a first terminal of the current source 1186 is coupled to the second controlled terminal 1120a of the transistor MN11102a, the second controlled terminal 1120b of the transistor MN21102b and the output terminal 1182, and a second terminal of the current source 1186 is coupled to a voltage reference point V2, which may be a power supply line.
In various embodiments, the circuit arrangement 1100 may further include a capacitor Con 1188, wherein a first terminal of the capacitor Con 1188 is coupled to the first terminal of the current source 1186 and the output terminal 1182, and a second terminal of the capacitor Con 1188 is coupled to a voltage reference point V1, which may be a ground terminal.
The circuit arrangement 1100 may further include a resistor RREF 1190, wherein a first terminal of the resistor RREF 1190 is coupled to the second controlled terminal 1128a of the transistor MP11124a, the second controlled terminal 1128b of the transistor MP21124b and the output terminal 1184, and a second terminal of the resistor RREF 1190 is coupled to a voltage reference point V1, which may be a ground terminal.
In various embodiments, the circuit arrangement 1100 may further include a capacitor Cop 1192, wherein a first terminal of the capacitor Cop 1192 is coupled to the first terminal of the RREF 1190 and the output terminal 1184, and a second terminal of the capacitor Cop 1192 is coupled to a voltage reference point V1, which may be a ground terminal.
The gates or control terminals 1122a, 1122b, 1130a, 1130b of the transistors MN11102a, MN21102b, MP11124a, MP21124b are biased via the pseudo-resistors or resistive elements Rf11132, Rf21134, Rf31136, Rf41138 respectively.
The capacitors C11178 and C31180 provide direct current (DC) blocking from the input terminal 1106, and the capacitors C21179 and C41181 provide direct current (DC) blocking from the input terminal 1108, and therefore their capacitance should be large compared to the gate capacitance of the respective transistors MN11102a, MN21102b, MP11124a, MP21124b in order to obtain maximum voltage swing at the respective control terminals 1122a, 1122b, 1130a, 1130b. The capacitors Con 1188 and Cop 1192 act to sustain the output voltages and may work as part of the low pass filter (e.g. 306) with an output resistance.
It should be appreciated that the descriptions of features in the context of the circuit arrangement 400 of
The circuit arrangement 1100 illustrates a fully differential implementation of the active RF detector of various embodiments, which may be robust or provide at least some immunity against common mode noise.
The circuit arrangement 400 (
Various embodiments may provide an ultra-low power wake-up receiver (RF receiver) based on the high sensitivity RF detector of various embodiments. The active RF detector of various embodiments, co-designed or embedded with an inductive source degeneration LC network or input matching network/circuit, provides high sensitivity and selectivity for the RF receiver. The input matching network or LC network provides selectivity and impedance matching to the antenna and also offers voltage gain via its quality factor.
As shown by the fully integrated schematic and system analysis, the sensitivity of the RF detector may achieve approximately −70 dBm, without power burden compared to conventional approaches, so as to achieve ultra-low power consumptions of about 10 μW. The receiver or detector of various embodiments may also be designed to be powered by ambient energy harvesting, without battery, and/or having an average current of about 10 nA and/or having an operating current of about 200 μA.
Various embodiments of the ultra-low power wake-up receiver includes a continuous-time sigma-delta analogue-to-digital converter (CT ΣΔ ADC) to provide oversampling to improve the signal to noise ratio (SNR) of the receiver.
Various embodiments of the receiver or detector offer low power and high carrier frequency operation with high sensitivity. Various embodiments of the receiver or detector may be employed in on-off keyed (OOK) and amplitude modulated (AM) applications.
Various embodiments may not require RF gain amplifiers in order to reduce power consumption. Therefore, a wake-up receiver with a high sensitivity detector, without RF amplification, may be power efficient. Various embodiments may also not require oscillators or additional external components.
While the invention has been particularly shown and described with reference to specific embodiments, it should be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. The elements of the various embodiments may be incorporated into each of the other species to obtain the benefits of those elements in combination with such other species, and the various beneficial features may be employed in embodiments alone or in combination with each other. The scope of the invention is thus indicated by the appended claims and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced.
Number | Date | Country | Kind |
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201106089-4 | Aug 2011 | SG | national |
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6825718 | Kang et al. | Nov 2004 | B2 |
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Number | Date | Country | |
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20130049839 A1 | Feb 2013 | US |