The subject matter herein generally relates to power supplies.
Computers have become part of our daily life. There may be two input/output devices connected to the computer, one requires no power supply, such as a mouse, the other requires a power supply, such as a printer. The power supplies required by common output devices are mostly 5V, 12V, or 24V, and different output devices need different external power supplies.
Implementations of the present technology will now be described, by way of example only, with reference to the attached figures.
It will be appreciated that for simplicity and clarity of illustration, where appropriate, reference numerals have been repeated among the different figures to indicate corresponding or analogous elements. In addition, numerous specific details are set forth in order to provide a thorough understanding of the embodiments described herein. However, it will be understood by those of ordinary skill in the art that the embodiment described herein can be practiced without these specific details. In other instances, methods, procedures, and components have not been described in detail so as not to obscure the related relevant feature being described. Also, the description is not to be considered as limiting the scope of the embodiments described herein. The drawings are not necessarily to scale and the proportions of certain parts may be exaggerated to better illustrate details and features of the present disclosure.
The term “comprising,” when utilized, means “including, but not necessarily limited to”; it specifically indicates open-ended inclusion or membership in the so-described combination, group, series and the like.
The present disclosure is in relation to a power supply circuit.
The power supply circuit comprises a signal input control circuit 10, a power output control circuit 20, and a power output switching circuit 30.
The signal input control circuit 10 comprises an AND gate U1, three n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) Q1-Q3, and three resistors R1-R3. The two input terminals of the AND gate U1 respectively receive two control signals GPIO40 and GPIO41. The output terminal of the AND gate U1 outputs a first selection signal GPIOA1. The output terminal of the AND gate U1 is connected to a gate of the MOSFET Q1. The gate of the MOSFET Q1 is connected to a first power source 3VSB through the resistor R1. A source of the MOSFET Q1 is grounded. A drain of the MOSFET Q1 is connected to a second power source 3VSB through the resistor R2. The drain of the MOSFET Q1 is connected to a gate of the MOSFET Q2. A drain of the MOSFET Q2 is connected to a power source 12V through a resistor R3 and is connected to a gate of the MOSFET Q3. A source of the MOSFET Q2 is grounded. A drain of the MOSFET Q3 functions as a signal input X of the signal input control circuit 10, and a source of the MOSFET Q3 functions as a signal output Y of the signal input control circuit 10. In this embodiment, the two control signals GPIO40 and GPIO41 are controlled by the BIOS.
The power output control circuit 20 comprises a first output control circuit 22, a second output control circuit 24, and a third output control circuit 26. The first output control circuit 22 can output a voltage of 5V to the external device 120. The second output control circuit 24 can output a voltage of 12V to the external device 130. The third output control circuit 26 can output a voltage of 24V to the external device 140.
The first output control circuit 22 comprises three n-channel MOSFETs Q4-Q6, a resistor R4, and a capacitor C1. A gate of the MOSFET Q4 receives the control signal GPIO40. A source of the MOSFET Q4 is grounded. A drain of the MOSFET Q4 is connected to a power source 12V through the resistor R4. The drain of the MOSFET Q4 is grounded through the capacitor C1. The drain of the MOSFET Q4 is connected to a first switch signal COM1−5V. A gate of the MOSFET Q5 is connected to a node between the MOSFET Q4 and the resistor R4. A drain of the MOSFET Q5 is connected to a power of VCC 5V. A source of the MOSFET Q5 is connected to a source of the MOSFET Q6. A gate of the MOSFET Q6 is connected to a node between the MOSFET Q4 and the resistor R4. A drain of the MOSFET Q6 outputs a first signal Vout through a fuse F.
The second output control circuit 24 comprises three n-channel MOSFETs Q7-Q9, a resistor R5, a resistor R6, and a capacitor C2. A gate of the MOSFET Q7 receives the control signal GPIO41. A source of the MOSFET Q7 is grounded. A drain of the MOSFET Q7 is connected to a power of 24V through the resistor R5. A node between the MOSFET Q7 and the resistor R5 is grounded through the resistor R6. The node between the MOSFET Q7 and the resistor R5 is grounded through the capacitor C2. The node between the MOSFET Q7 and the resistor R5 is connected to a second switch signal COM1−12V. A gate of the MOSFET Q8 is connected to the node between the MOSFET Q7 and the resistor R5. A drain of the MOSFET Q5 is connected to a power source of +12V. A source of the MOSFET Q8 is connected to a source of the MOSFET Q9. A gate of the MOSFET Q9 is connected to the node between the MOSFET Q7 and the resistor R5. A drain of the MOSFET Q9 outputs a second signal Vout through the fuse F.
The third output control circuit 26 comprises three n-channel MOSFETs Q10-Q12, a p-channel MOSFET Q13, three resistors R7-R9, and two capacitors C3-C4. A gate of the MOSFET Q10 receives the control signal GPIO40. A source of the MOSFET Q10 is grounded. A drain of the MOSFET Q10 is connected to a power source 3VSB through the resistor R7. A gate of the MOSFET Q11 receives the control signal GPIO41. A source of the MOSFET Q11 is grounded. A drain of the MOSFET Q11 is connected to a node between the MOSFET Q10 and the resistor R7 and outputs a second switch signal GPIOA2. A gate of the MOSFET Q12 is connected to a node between the MOSFET Q11 and the resistor R7. A drain of the MOSFET Q12 is connected to a power source +24V through the resistor R8 and resistor R9. A source of the MOSFET Q12 is grounded. One end of the capacitor C3 is connected to a node of the resistor R8 and resistor R9, and the other end of the capacitor C3 is grounded. One end of the capacitor C4 is connected to the node between the resistor R8 and resistor R9, and the other end of the capacitor C4 is connected to a source of the MOSFET Q13. A gate of the MOSFET Q13 is connected to a node between the resistor R8 and resistor R9. A source of the MOSFET Q13 is connected to a power source of +24V. A drain of the MOSFET Q13 outputs a third signal Vout through the fuse F.
The power output switching circuit 30 can switch between an output voltage of 5V and 12V. The power output switching circuit 30 comprises an OR gate U2, a resistor R10, and two n-channel MOSFETs Q14-Q15. Two input ends of the OR gate respectively receive the first control signal GPIOA1 and the second control signal GPIOA2, and an output end of the OR gate is grounded through the resistor R10. The output end of the OR gate U2 is connected to the gate of the MOSFET Q14 and the gate of the MOSFET Q15. A drain of the MOSFET Q14 is connected to the drain of the MOSFET Q15 for outputting the first switching signal COM1−5V. A source of the MOSFET Q14 is grounded. A drain of the MOSFET Q15 is connected to a drain of the MOSFET Q7 for outputting a second switching signal COM1−12V.
When the control signal GPIO40 and GPIO41 are both low, the AND gate U1 outputs a low signal, the first selection signal GPIOA1 is low, and the control circuit 10 is turned off. The control signals GPIO40 and GPIO41 are both low, and the MOSFET Q10 and MOSFET Q11 of the third output control circuit 26 are turned off. The second selection signal GPIOA2 is connected to the power source of 3V and gets a high signal, thus the MOSFET Q12 is turned on. The resistor R8 reduces the voltage of the gate of the MOSFET Q13 to lower than 24V. The voltage of the power source of the MOSFET Q13 is 24V, so the voltage of the gate is lower than the power source voltage of the MOSFET Q13, and the MOSFET Q13 is turned on. The third signal Vout output from the third output control circuit 26 is 24V.
The second selection signal GPIOA2 is high and the first selection signal GPIOA1 is low. The OR gate U2 of the power output switching circuit 30 outputs a high signal and the MOSFET Q14 and the MOSFET Q15 are turned on. The first switching signal COM1−5V and the second switching signal COM1−12V are both low, and make the MOSFETs Q5, Q6, Q8, and Q9 turn off. The first output control circuit 22 and the second output control circuit 24 have no output.
When the control signal GPIO40 is a high signal, the control signal GPIO41 is low, the AND gate U1 outputs a low signal, the first selection signal GPIOA1 is low, and the control circuit 10 is turned off. The control signal GPIO41 is low and the MOSFET Q7 of the second output control circuit 24 is turned off. The gate of the MOSFET Q7 is a high signal and the gates of the MOSFET Q8 and the MOSFET Q9 have high signals. The MOSFET Q8 and the MOSFET Q9 are turned on. The second signal Vout output from the second output control circuit 24 is 12V.
The control signal GPIO40 is a high signal, the MOSFET Q10 of the third output control circuit 26 is turned on, the MOSFET Q11 is turned off, so the second selection signal GPIOA2 is low, and the MOSFET Q12 is turned off. A gate voltage of the MOSFET Q13 is equal to the source voltage of the MOSFET Q13 and the MOSFET Q13 is turned off. The third output control circuit 26 has no output.
The control signal GPIO40 is high signal, the MOSFET Q4 of the first output control circuit 22 is turned on, the drain of the MOSFET Q4 is low, and the gates of the MOSFET Q5 and the MOSFET Q6 are low. The MOSFET Q5 and the MOSFET Q6 are turned off, and the first output control circuit 22 has no output.
When the control signal GPIO40 is low, the control signal GPIO41 is high signal, the AND gate U1 outputs a low signal, the first selection signal GPIOA1 is low, the control circuit 10 is turned off. The control signal GPIO40 is low, the MOSFET Q4 of the first output control circuit 22 is turned off. The gates of the MOSFET Q5 and the MOSFET Q6 are high signal. The MOSFET Q5 and the MOSFET Q6 are turned on. The first signal Vout output from the first output control circuit 22 is 5V.
The control signal GPIO41 is a high signal, the MOSFET Q11 of the third output control circuit 26 is turned on, so the second selection signal GPIOA2 is low, and the MOSFET Q12 is turned off. The gate voltage of the MOSFET Q13 is equal to the source voltage of the MOSFET Q13 and the MOSFET Q13 is turned off. The third output control circuit 26 has no output.
The control signal GPIO41 is a high signal, the MOSFET Q7 of the second output control circuit 24 is turned on and the gates of the MOSFET Q8 and the MOSFET Q9 are low. The MOSFET Q8 and the MOSFET Q9 are turned off, and the second output control circuit 24 has no output.
When the control signal GPIO40 and GPIO41 are both high signals, the AND gate U1 of the control circuit 10 outputs a high signal, the first selection signal GPIOA1 is a high signal, and the MOSFET Q1 is turned on. The gate of the MOSFET Q2 is low, and the MOSFET Q2 is turned off. The gate of the MOSFET Q3 is a high signal and the MOSFET Q3 is turned on, thus an external device, such as a modem, can communicate with a computer host through the MOSFET Q3.
The control signal GPIO40 and GPIO41 are both high signals and the MOSFET Q10 and the MOSFET Q11 of the third output control circuit 26 are turned on. The second selection signal GPIOA2 is low and the MOSFET Q12 is turned off. So the voltage of the gate is equal to the power source voltage of the MOSFET Q13, and the MOSFET Q13 is turned off. The third output control circuit 26 has no output.
The control signal GPIO40 is a high signal and the MOSFET Q4 of the first output control circuit 22 is turned on. The gate of the MOSFET Q4 is low. The gates of the MOSFET Q5 and the MOSFET Q6 are low. The MOSFET Q5 and the MOSFET Q6 are turned off. The first output control circuit 22 has no output.
The control signal GPIO41 is a high signal, the MOSFET Q7 of the second output control circuit 24 is turned on, and the gates of the MOSFET Q8 and the MOSFET Q9 are low. The MOSFET Q8 and the MOSFET Q9 are turned off, and the second output control circuit 24 has no output.
Users can choose the output voltage or the input signal by setting the control signals GPIO40 and GPIO41.
It is to be understood, however, that even though numerous characteristics and advantages of the embodiments have been set forth in the foregoing description, together with details of the structure and function of the embodiments, the disclosure is illustrative only, and changes may be made in detail, especially in the matters of shape, size, and arrangement of parts within the principles of the disclosure to the full extent indicated by the broad general meaning of the terms in which the appended claims are expressed.
| Number | Date | Country | Kind |
|---|---|---|---|
| 103140156 | Nov 2014 | TW | national |