Patent Application
20080088991
A full understanding of the invention can be gained from the following description of the preferred embodiments when read in conjunction with the accompanying drawings in which:
The invention is described in association with a miniature circuit breaker, although the invention is applicable to a wide range of circuit interrupters.
The protective electronic circuit 4 and, more particularly, the μP 6, may include one or both of an arc fault protection circuit and a ground fault protection circuit. Alternatively, other suitable trip circuit(s) may be employed. Non-limiting examples of arc fault detectors are disclosed, for instance, in U.S. Pat. No. 5,224,006, with a preferred type described in U.S. Pat. No. 5,691,869, which is hereby incorporated by reference herein. Non-limiting examples of ground fault detectors are disclosed in U.S. Pat. Nos. 5,293,522; 5,260,676; 4,081,852; and 3,736,468, which are hereby incorporated by reference herein.
The example electronic circuit 4 provides a “thermal overload” predictive function 17 through the μP 6. A temperature sensor (e.g., without limitation, a diode (D1) 18, which is driven by a suitable predetermined low level current from current source 20) is used to measure the temperature of the shunt wire (R1) 8 (with suitably close thermal coupling of the shunt wire (R1) 8 to diode (D1) 18 being employed).
A suitable power supply 22 (e.g., alternating current to direct current) supplies power to the current source 20 and a microcomputer (μC) 28. The μC 28 includes the μP 6 and a nonvolatile (NV) memory 24, and may also optionally include an ambient temperature sensing circuit (not shown), although such a circuit is not required. The μP 6 drives an SCR 26 that energizes the coil of the trip solenoid 12 to trip open the separable contacts 14 through the operating mechanism 10. The separable contacts 14 are electrically connected in series with the shunt wire (R1) 8 between a line terminal 30 and a load terminal 32. The power supply 22 is powered from a line-to-neutral voltage between the line terminal 30 and a line neutral terminal 34, which is electrically connected to a load neutral terminal 36.
For example, at the time of manufacture and test of the electronic circuit 4, the ambient temperature and the corresponding forward voltage of the diode (D1) 18, as measured by μP 6 from the anode of diode (D1) 18 with no current in the shunt wire (R1) 8, are measured and saved in the μC NV memory 24. Diodes, such as diode (D1) 18, have a very predictable and stable negative voltage temperature coefficient (e.g., without limitation, about −2.2 mV/° C.) when biased with a suitable small fixed current (e.g., without limitation, on the order of about 100 μA) from the example current source 20.
The shunt wire (R1) 8 is selected to thermally match the UL 489 protection points of 135% and 200%. The shunt wire (R1) 8 is selected to be about the same wire gauge as that of the power circuit (not shown) being protected, but generally with a relatively higher temperature insulation rating, in order that its thermal mass slows the temperature rise of that shunt. For example, when 200% current is applied, the temperature of the shunt wire (R1) 8 (and the corresponding voltage of the diode (D1) 18) reaches the trip temperature, which trips the circuit breaker 2 based upon the sensed temperature (and the corresponding sensed voltage), in about 15 seconds which is within the UL 489 limits.
At a fixed level of current (I), the power dissipation in the shunt wire 8 is P=(I2R) (watts), wherein R is the resistance value of the shunt wire 8. This power dissipation causes a temperature rise Tr of the shunt wire 8 wherein: (1) the “rate of temperature rise” is determined by the thermal capacitance of the shunt “Ct” [(joules=watts/second)/° C.] and (2) the final steady state shunt temperature is determined by the ambient temperature and the thermal resistance “Rt” (° C./watt) from the shunt to the ambient. The temperature of the shunt is thus Tshunt=[P*Rt]*(1-e−t/RtCt) wherein: Tshunt is the temperature rise above ambient.
Ttrip is the shunt temperature rise above ambient when tripping occurs. Equations 1 and 2 show Ttrip for the ultimate (chosen or 115%) trip point and the 200% trip point, respectively.
T
trip=(P@I=115%)*Rt=[R*(Irated*1.15)2]*Rt (Eq. 1)
T
trip=(P@I=200%)*Rt=[R*(Irated*2.00)2]*Rt*(1-e−t@200%/RtCt) (Eq. 2)
wherein:
t@200% is chosen, for example, to be 38 seconds (≅√{square root over ((12*120))});
P@I=115% is the power at 115% rated current; and
P@I=200% is the power at 200% rated current.
Solving Equations 1 and 2 for RtCt with Ttrip being constant yields RtCt≅95 seconds. Similarly, Equation 3 shows Ttrip for the 135% trip point.
T
trip=(P@I=135%)*Rt=[R*(Irated*1.35)2]*Rt*(1-e−t@135%/RtCt) (Eq. 3)
Using RtCt=95 seconds and solving Equations 1 and 3 for t@135% yields RtCt≅123 seconds. Thus, the nominal trip time at 200% rated current is 38 seconds and the nominal trip time at 135% rated current is about 123 seconds.
Any other trip equations are of the form: Ttrip=K*Irated2*[1-e−t/RtCt], wherein RtCt is the thermal time constant of the shunt wire 8 in the ambient, K=R*PCT2Rt and PCT is the corresponding percentage of rated current. Except for the case where PCT is 115% of rated (ultimate trip point) current, where the circuit breaker 2 waits as long as it takes to trip, “t” is relatively very large and e−t/RtCt is about zero. Also, since the load current is sensed from the voltage across the shunt wire (R1) 8, the electronic overload trip can, for example, be inhibited for currents of less than about 110%.
A conventional bimetal (not shown) trips a conventional circuit breaker (not shown) at a certain temperature, To, at, for example, 115% of rated current. The heat required to get the bimetal to that temperature is shown in Equation 4.
[I(115%)]2*[Rbimetal]=K(To−Tambient) (Eq. 4)
wherein:
Rbimetal is the bimetal resistance;
K is a gain factor (W/° C.);
To is the trip temperature (° C.); and
Tambient is the ambient temperature (° C.).
As a further example, if To is 200° C. and the ambient temperature rises from 25° C. to 65° C., then the circuit breaker trip current level will decrease from 115% to about 101% (=√{square root over ([(1152)*(200−65)/(200−25)])}{square root over ([(1152)*(200−65)/(200−25)])}{square root over ([(1152)*(200−65)/(200−25)])}) from Equation 4. Thus, such a conventional circuit breaker may not be able to carry about 100% rated current in a relatively hot environment. However, since the μP 6 of
For thermal overload conditions at about 135% of rated current, the power circuit ambient somewhat tracks the temperature rise of the shunt wire (R1) 8. Therefore, if ambient temperature compensation is to be used, then it needs to be a non-linear function desensitizing the ambient temperature effects.
For example, the circuit breaker 2 may be hot because its load center (not shown) is located in Phoenix, Ariz. on the south side of a house (not shown) on a sunny day. Hence, high ambient temperatures do not necessarily mean that the power circuit conductor (not shown), which is electrically connected to the load terminal 32 and in series with the shunt wire (R1) 8, to be protected is also hot. Thus, ambient compensation, if used, should only be enabled at temperatures above about 40° C., which is the listed breaker operating temperature, and be just sufficient to prevent nuisance tripping. Here, the desired non-linear function is easily incorporated into the μP protective functions 7,16 with, for example, a predetermined table lookup in the NV memory 24.
As an example, if the ambient temperature is below 40° C. as measured by a circuit (not shown) either internal to the μC 28 or on the μC circuit board, then no compensation is made. However, if the ambient temperature is 65° C., then the trip level temperature (To) may be raised by about a 20° C. setpoint limit, since some of the ambient temperature rise may be due to the load current power dissipation in components other than, but also including, the shunt wire 8.
For example, the exact thermal gain of the diode (D1) 18 can be measured at the time of manufacture of the electronic circuit 4 by heating diode (D1) 18 to a known temperature above ambient temperature with a known forward current passing therethrough, reading the forward voltage, calculating the gain factor, and storing that gain factor (e.g., without limitation, k equal to about −2.2 mV/° C.) in μP NV memory 24. This is shown from Equation 5:
k=(V1−VA)/(T1−TA) (Eq. 5)
wherein:
TA is a predetermined ambient temperature stored in NV memory 24 at the time of manufacture;
VA is a measured voltage across the diode (D1) 18 and stored in NV memory 24, which measured voltage corresponds to the predetermined ambient temperature;
T1 is a measured temperature, which need not be stored in NV memory 24; this measured temperature T1 is suitably greater than TA; and
V1 is a measured voltage across the diode (D1) 18, which need not be stored in NV memory 24, this measured voltage V1 corresponds to the measured temperature T1.
Also, if the ambient temperature, TA, is known and the temperature sensor is a diode, such as D1 18, then a difference voltage is needed including the forward voltage at a fixed temperature. This forward voltage, VA, at the fixed temperature, TA, is saved in the NV memory 24 at the time of manufacture or test. In this manner, only fixed constants, VA, TA and k, possibly determined at the time of manufacture or test, need to be stored in NV memory 24. The temperature as a function of diode forward voltage is shown in Equation 6:
T
X
=T
A+(VX−VA)/k (Eq. 6)
wherein:
VX is a measured voltage across the diode (D1) 18; and
TX is the calculated temperature corresponding to that measured voltage.
The temperature rise of the shunt wire (R1) 8 is proportional to the power dissipation (i.e., (Ishunt)2Rshunt) and thus VX will be related to TX or the I2R heating of the wires (i.e., the shunt wire (R1) 8 and also the power conductor or wire to be protected).
Table 1, below, defines a set of thermal overload conditions for a circuit breaker (not shown) as defined by UL 489 (molded case circuit breaker standard) section 7.1.2 “Calibration Tests”.
Referring to
Next, at 45, the value “Trip Value” is set from a shunt wire temperature trip setting, as will be discussed, below. Then, at 46, it is determined if the load current is above 115% of rated current. Here, the voltage of the shunt wire (R1) 8 divided by its known resistance is compared to 115% times the predetermined rated current. Alternatively, it is determined if the voltage of the shunt wire (R1) 8 is greater than a predetermined value (115% times the predetermined rated current times the known resistance of the shunt wire 8). If this test is not met, then the routine 40 returns at 54. Otherwise, at 48, it is determined if the ambient temperature is greater than 40° C. If not, then at 50, it is determined if the temperature of the shunt wire (R1) 8 as represented by the voltage of the diode (D1) 18 is greater than the “Trip Value”. If so, then the trip signal is output to the SCR 26 (
If ambient temperature compensation is optionally employed, and if the ambient temperature is greater than 40° C. at 48, then a suitable incremental trip offset is added to the “Trip Value” from, for example, a look-up table 58 in NV 24 (
In the routine 40, the “Trip Value” is preferably determined experimentally for a reference circuit (not shown) using a reference diode (not shown). Then, that experimental “trip value” is preferably adjusted at the time of manufacture of a particular circuit interrupter by measuring the forward voltage of the diode (D1) 18 at 25° C. This assumes that: (1) the diode forward voltage at 25° C. may vary from diode to diode; and (2) the diode forward voltage temperature coefficient will be uniform from diode to diode. Also, the temperature of the shunt wire 8 at the trip point is a fixed number. The “Trip Value” is determined from Equations 7 and 8, as follows:
V
X
=[V
X(135%)
−V
X(25)] (Eq. 7)
wherein:
VX is a “delta trip temperature” voltage value of the reference diode, and is assumed to be a fixed value from circuit interrupter to circuit interrupter;
VX(135%) is the trip voltage value of the reference diode at 135% rated current and at 25° C. ambient for the reference diode; and
VX(25) is the diode forward voltage at 25° C. ambient for the reference diode.
V
Y
=[V
Y(25)
+V
X] (Eq. 8)
wherein:
VY(25) is the diode forward voltage, which may vary from circuit interrupter to circuit interrupter, at 25° C. ambient for a particular diode such as diode (D1) 18; and
VY is the trip voltage value (“Trip Value”) for a particular diode such as diode (D1) 18.
The disclosed circuit breaker 2 provides a simplified and relatively more accurate calibration process than known prior circuit breakers. No mechanical moving parts are employed other than the trip solenoid 12 and the operating mechanism 10. This provides material and calibration cost savings and a relatively easier assembly process. The power dissipation of the prior bimetal (not shown) is no longer needed, but is replaced by the shunt wire (R1) 8 power dissipation, which may be employed for other protective functions. For example, in an arc fault circuit interrupter (AFCI), this can almost halve the load current associated circuit breaker losses (i.e., the bimetal resistance is about the same value as the resistance of the shunt wire (R1) 8 used to sense current for the AFCI function 7). In an AFCI circuit breaker with a bimetal (not shown) and a shunt wire (not shown), both the bimetal and the shunt wire dissipate about the same amount of power. Thus, eliminating the bimetal halves the power dissipation.
Using the μP 6 with the NV memory 24 enables the use of the internal shunt wire (R1) 8 to sense overload and cooling off conditions. This μP 6 has the benefit of being able to simply measure and store ambient calibration values at the time of manufacture of the electronic circuit 4. Additionally, a non-linear response (e.g., without limitation, a lookup table) to ambient temperatures is stored in the NV memory 24 to more accurately match the UL 489 135% tripping requirements. Thus, if the resistance of the shunt wire (R1) 8 with an equivalent thermal time constant is used, then an electronic trip can be issued when the shunt wire (R1) 8 reaches a predetermined fixed trip temperature.
Although separable contacts 14 are disclosed, suitable solid state separable contacts may be employed. For example, the disclosed circuit breaker 2 includes a suitable circuit interrupter mechanism, such as the separable contacts 14 that are opened and closed by the operating mechanism 10, although the invention is applicable to a wide range of circuit interruption mechanisms (e.g., without limitation, solid state or FET switches; contactor contacts) and/or solid state based control/protection devices (e.g., without limitation, drives; soft-starters).
While specific embodiments of the invention have been described in detail, it will be appreciated by those skilled in the art that various modifications and alternatives to those details could be developed in light of the overall teachings of the disclosure. Accordingly, the particular arrangements disclosed are meant to be illustrative only and not limiting as to the scope of the invention which is to be given the full breadth of the claims appended and any and all equivalents thereof.
