The present invention relates to optimizing charging of a bootstrap capacitor wherein a bootstrap capacitor is charged by a circuit emulating a bootstrap diode.
A common half bridge gate driver circuit 100 driving a load is illustrated in
That is because a source of the high side transistor 105a is above a source of the low side transistor 105b. The high side driver circuit DRV1 is referenced to the source of the high side output transistor 105a. Thus the powering voltage to the high side driver circuit DRV1 must be above powering voltage to the low side driver circuit DRV2.
To do this, a bootstrap circuit, illustrated in
In another circuit 300, shown in
The gate control circuit 410 is shown in
The circuit 700 possesses limitations, including conditions when the bootstrap capacitor cannot be fully charged because the low side input signal LIN to the low side driver is low even though the voltage VS at the switched node A is still low. In this condition, when the low side input signal LIN is low, because the bootstrap diode emulator is off, it cannot charge the bootstrap capacitor CBS. This deficiency may cause development of insufficient voltage across the bootstrap capacitor CBS to properly power the high side driver.
It is an object of the present invention to provide a circuit that optimizes the charging of the bootstrap capacitor to allow the bootstrap capacitor to charge whenever the voltage VS at a switched node A is low.
A circuit is provided for optimizing charging of a bootstrap capacitor connected to a high side floating supply voltage at a first terminal and to a switched node voltage at a second terminal, the circuit for optimizing being included in a gate driver circuit having a high- and a low-side driver circuits for driving high- and low-side switches connected at a switched node in a half bridge to provide current to a load, the high-side driver circuit receiving a first control voltage referenced to a first level and a low-side driver circuit receiving a second control voltage referenced to a second level, the bootstrap capacitor providing a supply voltage for the high side driver circuit. The optimizing circuit includes a first switch connected to the first terminal of the bootstrap capacitor; and a phase sense comparator for sensing the voltage at the switched node and turning ON the first switch when the voltage at the switched node is LOW, whereby charging of the bootstrap capacitor is optimized when the phase sense comparator is enabled.
Other features and advantages of the present invention will become apparent from the following description of the invention that refers to the accompanying drawings.
In accordance with the present invention,
The phase sense comparator 220 and the bootstrap diode emulator driver 200 are connected between the low side supply voltage VCC and the ground VSS. The phase sense comparator 220 receives a signal from the bootstrap diode emulator driver 200 and an enabling signal LOPD generated by a low side output pre-driver from the low side input signal LIN and provides an output VSsense out to the low side driver. The diode emulator LDMOS 405 is connected between the low side supply voltage VCC and the high side floating supply voltage VBS. The high side floating supply voltage VBS is provided across a capacitor CBS, which is connected to the switched node (phase) VS.
According to the present invention, the high and low side input signals HIN and LIN are sensed. If the high side input signal HIN is HIGH, the phase sense comparator 220 is disabled. If the low side input signal LIN is HIGH and thus LOPD signal, generated from the low side input signal LIN, is HIGH, the phase sense comparator 220 is enabled.
When the high and low side input signals HIN or LIN go OFF, a timeout, e.g., one microsecond, is employed to keep the phase sense comparator 220 enabled. If during the timeout, the voltage VS stays OFF or goes to DC− level, the bootstrap diode emulator 405 is kept turned ON. If during the timeout, the switched node voltage VS stays at or goes to DC+, the bootstrap diode emulator 405 is turned OFF and the phase sense comparator 220 is disabled. Thus, the bootstrap diode emulator 405 is driven only by the phase sense comparator 220. The bootstrap capacitor CBS is charged whenever the phase sense comparator 220 is enabled.
The phase sense comparator 220 senses the voltage VS. At the end of the timeout, if the phase of the voltage VS is low, the phase sense comparator 220 remains enabled. If the voltage VS goes HIGH, the phase sense comparator 220 goes OFF.
As shown in
A circuit of the phase sense comparator circuit 220 is illustrated in
When the signal LOPD is turned ON, the current comparator 230 is enabled and a first gate control circuit provides a signal used to turn on the “Vssense” LDMOS device 210. Then, as shown in
At that point, the high side input signal HIN is OFF; the low side input signal LIN is also OFF; and the phase sense comparator circuit 220 is enabled for one microsecond. During this time, the high side offset voltage VS is monitored.
If the switched node voltage VS is at a DC− level, the bootstrap diode emulator is turned ON. If the voltage VS is greater than VCC, the bootstrap diode emulator is turned OFF and the phase comparator circuit 220 is disabled.
Although the present invention has been described in relation to particular embodiments thereof, many other variations and modifications and other uses will become apparent to those skilled in the art. It is preferred, therefore, that the present invention not be limited by the specific disclosure herein.
This application is based on and claims priority to U.S. Provisional Patent Application Ser. No. 60/790,406, filed on Apr. 7, 2006 and entitled CIRCUIT TO OPTIMIZE CHARGING OF BOOTSTRAP CAPACITOR WITH BOOSTRAP DIODE EMULATOR, which is incorporated herein by reference. The entire contents of U.S. patent application Ser. No. 10/712,893, filed on Nov. 12, 2003 and entitled BOOTSTRAP DIODE EMULATOR WITH DYNAMIC BACK-GATE BIASING and of U.S. patent application Ser. No. 11/207,465, filed on Aug. 19, 2005 and entitled BOOTSTRAP DIODE EMULATOR WITH DYNAMIC BACK-GATE BIASING AND SHORT-CIRCUIT PROTECTION, are also incorporated herein by reference.
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