None
This disclosure relates to artificial impedance surface antennas (AISAs), and in particular to circularly polarized AISAs.
Artificial impedance surface antennas (AISAs) are realized by launching a surface wave across an artificial impedance surface (AIS), whose impedance is spatially modulated across the AIS according a function that matches the phase fronts between the surface wave on the AIS and the desired far-field radiation pattern.
In previous work described in references [1]-[6] below, artificial impedance surface antennas (AISA) are formed from modulated artificial impedance surfaces (AIS). Patel in reference [1] describes a scalar AISA using an endfire-flare-fed one-dimensional, spatially-modulated AIS consisting of a linear array of metallic strips on a grounded dielectric. Sievenpiper, Colburn and Fong in references [2]-[4] describe scalar and tensor AISAs on both flat and curved surfaces using waveguide- or dipole-fed, two-dimensional, spatially-modulated AISs consisting of a grounded dielectric topped with a grid of metallic patches. Gregoire in references [5]-[6] examined the dependence of AISA operation on the AISA's design properties.
The basic principle of AISA operation is to use the grid momentum of the modulated AIS to match the wavevector of an excited surface-wave (SW) front to a desired plane wave. In the one-dimensional case, this can be expressed as
k
sw
=k
o sin θo−kp (1)
where ko is the radiation's free-space wavenumber at the design frequency, θo is the angle of the desired radiation with respect to the AIS normal, kp=2π/p is the AIS grid momentum where p is the AIS modulation period, and ksw=noko is the surface wave's wavenumber, where no is the surface wave's refractive index averaged over the AIS modulation. The surface wave (SW) impedance is typically chosen to have a pattern that modulates the SW impedance sinusoidally along the SW grid according to
Z(x)=X+M cos(2πx/p) (2)
where p is the period of the modulation, X is the mean impedance, and M is the modulation amplitude. X, M and p are chosen such that the angle of the radiation θ in the x-z plane with respect to the z axis is determined by
θ=sin−1(n0−λ0/p) (3)
where n0 is the mean SW index, and λ0 is the free-space wavelength of radiation. n0 is related to Z(x) by
The AISA impedance modulation of Eqn. (2) can be generalized for an AISA of any shape as
Z=({right arrow over (r)})X+M cos(konor−{right arrow over (k)}o□{right arrow over (r)}) (5)
where {right arrow over (k)}o is the desired radiation wave vector, {right arrow over (r)} is the three-dimensional position vector of the AIS, and r is the distance along the AIS from the surface-wave source to {right arrow over (r)} along a geodesic on the AIS surface. This expression can be used to determine the index modulation for an AISA of any geometry, flat, cylindrical, spherical, or any arbitrary shape. In some cases, determining the value of r is geometrically complex. For a flat AISA, it is simply r=√{square root over (x2+y2)}.
For a flat AISA (in the x-y plane), the radiation wavevector be assumed to radiate into the x-z plane {right arrow over (k)}o=ko(sin θo{circumflex over (x)}+cos θo {circumflex over (z)}) without loss of generality. Let the surface-wave source be located at x=y=0. Then, the modulation function is
Z(x,y)=X+M cos γ (6)
where γ≡ko(noρ−x sin θ0) (7)
and ρ=√{square root over (x2+y2)}. The cos function in Eqns. (2), (5) and (6) can be replaced with any periodic function and the AISA will still operate as designed, but the properties of the radiation side lobes, bandwidth and beam squint will be affected.
The AIS can be realized as a grid of metallic patches on a grounded dielectric. The desired index modulation is produced by varying the size of the patches according to a function that correlates the patch size to the surface wave index. The correlation between index and patch size can be determined using simulations, calculation and/or measurement techniques. For example, Colburn in reference [3] and Fong in reference [4] use a combination of HFSS unit-cell eigenvalue simulations and near field measurements of test boards to determine their correlation function. Fast approximate methods presented by Luukkonen in reference [7] can also be used to calculate the correlation. However, empirical correction factors are often applied to these methods. In many regimes, these methods agree very well with HFSS eigenvalue simulations and near-field measurements. They break down when the patch size is large compared to the substrate thickness, or when the surface-wave phase shift per unit cell approaches 180°.
An AIS antenna can be made to operate with circularly-polarized (CP) radiation by using a modulated tensor-impedance surface whose impedance properties are anisotropic. Mathematically, the impedance is described at every point on the AIS by a tensor. In a generalization of the modulation function of equation (6) for the linear-polarized AISA as described in reference [4], the impedance tensor of the CP AISA may have a form like
where φ≡tan−1(y/x). (9)
In reference [4], the tensor impedance is realized with anisotropic metallic patches on a grounded dielectric substrate. The patches are squares of various sizes with a slice through the center of them. By varying the size of the patches and the angle of the slice through them, the desired tensor impedance of equation (8) can be created across the entire AIS. Other types of tensor impedance elements besides these sliced patches can be used to create the tensor AIS.
All-dielectric AIS antennas have been demonstrated for linearly-polarized operation and described in reference [9]. Dielectric AIS antennas operate according to the same principle of the prior art AIS antennas described above except that the impedance is modulated by varying the thickness of the dielectric.
Circularly-polarized (CP) AIS antennas that radiate at θ=0° can be made with a modulated scalar impedance, as described in reference [8]. The impedance is modulated according to
Z(x,y)=X+M cos(γ±φ) (10)
where γ and φ have been defined in equations (7) and (9) respectively, and the ±sign corresponds to an antenna operating in right-hand CP (RHCP) or left-hand CP (LHCP) modes respectively. In appearance, the modulation looks like intertwined, circular spiral lines of constant impedance, such as lines 50 and 52 of low and high impedance, respectively, as shown in
Minatti and Maci in reference [8] deduced the impedance modulation of equation (10) through purely intuitive methods; however, they were unable to generalize it for an antenna radiating at an arbitrary angle.
What is needed is a circularly-polarized AIS antenna that can radiate at an arbitrary angle. The embodiments of the present disclosure answer these and other needs.
In a first embodiment disclosed herein, a circularly polarized artificial impedance surface antenna (AISA) comprises an impedance modulated substrate having a modulated scalar impedance to a surface wave traversing a top surface of the substrate, wherein the impedance modulation has a plurality of intertwined lines of constant impedance, and wherein each line of constant impedance follows a spiral elliptical path.
In another embodiment disclosed herein, a method of fabricating a method of fabricating a circularly polarized artificial impedance surface antenna (AISA) comprises forming an impedance modulated substrate having a modulated scalar impedance to a surface wave traversing a top surface of the substrate, wherein the impedance modulation has a plurality of intertwined lines of constant impedance, and wherein each line of constant impedance follows a spiral elliptical path.
In yet another embodiment disclosed herein, a circularly polarized artificial impedance surface antenna (AISA) comprises an impedance modulated substrate having a modulated scalar impedance to a surface wave traversing a top surface of the substrate, wherein the modulated scalar impedance pattern is
where X is the mean impedance, where M is the modulation amplitude, where θ0 is the elevation angle of maximal gain with respect to a normal to the AISA, where γ≡k0(n0ρ−x sin θ0) ko is a radiation's free-space wavenumber at a design frequency, no is a surface wave's refractive index averaged over the scalar impedance pattern, and ρ=√{square root over (x2+y2)}, where
where the ±sign corresponds to the AISA operating in a right hand circularly polarized (RHCP) or left hand circularly polarized (LHCP) modes, respectively, and where X and M vary with ρ, the distance from the surface-wave source.
In still another embodiment disclosed herein, a method of fabricating a circularly polarized artificial impedance surface antenna (AISA) comprises an impedance modulated substrate having a modulated scalar impedance to a surface wave traversing a top surface of the substrate, wherein the modulated scalar impedance pattern is
where X is the mean impedance, where M is the modulation amplitude, where θ0 is the elevation angle of maximal gain with respect to a normal to the AISA, where γ≡k0(noρ−x sin θ0) ko is a radiation's free-space wavenumber at a design frequency, no is a surface wave's refractive index averaged over the scalar impedance pattern, and ρ=√{square root over (x2+y2)}, where
where the ±sign corresponds to the AISA operating in a right hand circularly polarized (RHCP) or left hand circularly polarized (LHCP) modes, respectively, and where X and M vary with ρ, the distance from the surface-wave source.
These and other features and advantages will become further apparent from the detailed description and accompanying figures that follow. In the figures and description, numerals indicate the various features, like numerals referring to like features throughout both the drawings and the description.
In the following description, numerous specific details are set forth to clearly describe various specific embodiments disclosed herein. One skilled in the art, however, will understand that the presently claimed invention may be practiced without all of the specific details discussed below. In other instances, well known features have not been described so as not to obscure the invention.
A circularly-polarized, scalar-impedance Artificial Impedance Surface Antenna (AISA) is disclosed that can be configured to radiate in a beam directed at an arbitrary angle. The AISA of the present disclosure has intertwined, elliptical spiral lines of constant impedance ranging from low and to high impedance, rather than the circular spiral lines, such as lines 50 and 52, as shown in
In another embodiment, the elliptical lines of intertwined impedance are not constant impedance, but may vary with their distance from the surface-wave source.
The length of the connector's center conductor 606 preferably has a length approximately one quarter (¼) wavelength of the surface wave from the ground plane. For a 12 GHz AISA, the length of the center conductor 606 is approximately 0.63 cm. This method of connecting to the AISA and other methods are well documented in the prior art [1]-[8]. A surface wave may be excited on the surface of the AISA by applying a radio frequency signal to the coaxial connector 601. A surface wave is generated and propagates radially outward from the surface wave coupler when the AISA is used in the transmit mode. When the AISA is used in the receive mode, the surface wave propagates inward towards the surface wave coupler.
The surface wave may also be transmitted or received by other forms of surface wave feeds coupled to the x=0, y=0 location on of the dielectric substrate. For example, the surface wave feed may be a micro-strip line, a waveguide, a microwave horn, or a dipole.
The impedance pattern of the AISA of the present disclosure is modulated according to equation (11):
where X is the mean impedance;
where M is the modulation amplitude;
where θ0 is the elevation angle of maximal gain with respect to a normal to the AISA;
where γ≡k0(n0ρ−x sin θ0);
ko is a radiation's free-space wavenumber at a design frequency;
no is a surface wave's refractive index averaged over the scalar impedance pattern;
and ρ=√{square root over (x2+y2)}
where
and
where the ±sign corresponds to the AISA operating in a right hand circularly polarized (RHCP) or left hand circularly polarized (LHCP) modes, respectively.
In some embodiments, X and M may vary with ρ, the distance from the surface-wave source. In one embodiment, M increases monotonically with ρ in order to maximize the antenna's aperture efficiency. This technique of tapering the impedance modulation amplitude is well known in the state of the prior art.
Equation (11) reduces to equation (10), when θ=0° for the circularly-polarized AIS antennas of the prior art with circular spiral arms of low and high impedance, as shown in
The impedance pattern for the AISA of the present disclosure, as described above, is a pair of intertwined, elliptical spiral arms 100 and 102, as shown in
The following describes a method for deriving impedance patterns for AISAs of the present disclosure.
AISA radiation is due to the surface wave (SW) current distribution according to the far-field radiation integral
E
rad(k)∝∫AIS[{{circumflex over (k)}×Jsw(r′)}×{circumflex over (k)}]e−ik□r′d2r′, (12)
where Erad(k) is the radiation's electric field in the far-field, JSW is the surface-wave current density, k is the radiation wavevector that designates both the radiation's direction and frequency, and r′ is a point on the AIS.
When the left side of equation (12) is a desired antenna pattern, then the AIS impedance modulation that produces that pattern can be found by finding the surface-wave current that maximizes the integral on the right side of equation (12). One way the integral can be maximized is by setting the argument of the integral to be proportional to a desired radiation's polarization vector when k=k0. Another way to maximize the integral is to require that the integral's argument when summed over a set of points on the AIS surface that are related by symmetry be likewise proportional to the radiation's polarization vector.
If an AISA is designed to have peak gain for a radiation wavevector k=k0 and polarization prad=pθ{circumflex over (θ)}0+pφ{circumflex over (φ)}0, then the field at the frequency of and in the direction of k0 is proportional to
E
rad
∝p
rad
e
fk
□r. (13)
The surface wave (SW) impedance modulation is represented by the admittance tensor Ysw. The SW current is related to the SW field Esw through Ysw, and Esw is defined by its phase Φsw and polarization psw,
J
SW
=Y
SW
E
sw
∝Y
SW
e
iφ
sw, (14)
where Φsw is a function of the SW propagation path and the impedance along the path.
Ysw is purely susceptive, and is decomposed into a constant part and a modulated part
Y
sw
=iBI+iδBIm(Qsw), (15)
where B is the mean susceptance, I is the identity matrix, δB is the modulation amplitude, and Qsw is the modulation tensor. When equations (13) and (14) are substituted into (12), the integral can be separated into three integrals that are proportional to B, Q*sw and Qsw respectively. Only the last integral is non-vanishing.
The radiation integral (12) is maximized when its argument is unity. Then for radiation at k0 and prad
({circumflex over (k)}0×Jsw)×{circumflex over (k)}0∝pradeik
This condition requires every point on the AIS to contribute equally to the radiation field and is therefore dubbed the strong condition. Combining (12)-(14) gives the strong condition for the modulation tensor,
Q
sw
p
sw
∝e
−iΓ
p′
rad (17)
where Γ is the modulation parameter
Γ=Φsw−k0□r (18)
and p′rad is defined here as the modified polarization vector
p′
rad≡(pθ/cos θ0{circumflex over (x)}+pφŷ) (19)
In one embodiment, an AISA is a planar AISA confined to x-y plane with transverse-magnetic (TM) SWs radiating from a source at the origin. In this AISA configuration, the SW polarization vector is psw=ρ where ρ is a unit vector in cylindrical coordinates on the AIS surface; it is also the surface tangent along the SW path.
The SW phase, Φsw, is
Φsw(r)=k0∫0ρnsw(r′)dρ′ (20)
where nsw is the effective SW index. If the variation in nsw is ignored, then the modulation parameter of equation (18) may be approximated as
Γ≅k0n0ρ−k0□r≡γ. (21)
where γ is defined in equation (7).
The impedance pattern for the present disclosure may be derived from the above analysis by applying the second condition for maximizing the radiation integral. This so-called weak condition results by replacing the integral with a sum over a set of points related by symmetry. Then equation (17) may be rewritten as
Equation (22) may be used to derive the impedance modulation for the present disclosure by choosing the set of symmetry-related points to be ρn={(ρ,φ),(ρ,φ+π/2)}, and the circular polarization to be (pθ=1,pφ=±i). Then equation (22) yields for the modulation parameter
and the impedance modulation is as expressed in equation (11).
One skilled in the art will notice that the above derivation assumes an admittance modulation while equation (11) is an impedance modulation. For the sake of brevity and clarity, the details of how the modulation is converted from the admittance formulation of (15) to the impedance formulation of (11) has been omitted; however those skilled in the art would understand the details, and would understand that the functional forms of the two modulation formulations are approximately identical when the modulation depth is small.
Having now described the invention in accordance with the requirements of the patent statutes, those skilled in this art will understand how to make changes and modifications to the present invention to meet their specific requirements or conditions. Such changes and modifications may be made without departing from the scope and spirit of the invention as disclosed herein.
The foregoing Detailed Description of exemplary and preferred embodiments is presented for purposes of illustration and disclosure in accordance with the requirements of the law. It is not intended to be exhaustive nor to limit the invention to the precise form(s) described, but only to enable others skilled in the art to understand how the invention may be suited for a particular use or implementation. The possibility of modifications and variations will be apparent to practitioners skilled in the art. No limitation is intended by the description of exemplary embodiments which may have included tolerances, feature dimensions, specific operating conditions, engineering specifications, or the like, and which may vary between implementations or with changes to the state of the art, and no limitation should be implied therefrom. Applicant has made this disclosure with respect to the current state of the art, but also contemplates advancements and that adaptations in the future may take into consideration of those advancements, namely in accordance with the then current state of the art. It is intended that the scope of the invention be defined by the Claims as written and equivalents as applicable. Reference to a claim element in the singular is not intended to mean “one and only one” unless explicitly so stated. Moreover, no element, component, nor method or process step in this disclosure is intended to be dedicated to the public regardless of whether the element, component, or step is explicitly recited in the Claims. No claim element herein is to be construed under the provisions of 35 U.S.C. Sec. 112, sixth paragraph, unless the element is expressly recited using the phrase “means for . . . ” and no method or process step herein is to be construed under those provisions unless the step, or steps, are expressly recited using the phrase “comprising the step(s) of . . . . ”
This application is related to U.S. patent application Ser. No. 13/931,097, filed Jun. 28, 2013, U.S. patent application Ser. No. 13/752,195, filed Jan. 28, 2013, and U.S. patent application Ser. No. 13/427,682, filed Mar. 22, 2012, which are incorporated herein as though set forth in full.