Cleaning solution for substrate for use in semiconductor device and cleaning method using the same

Abstract

A cleaning solution for a substrate for use in a semiconductor device, which is used after a chemical mechanical polishing process in a semiconductor device production process, the cleaning solution containing a nonionic surfactant represented by the following formula (I), an organic acid, and a polyethylene glycol having a number average molecular weight of 5000 or less, wherein the pH of the cleaning solution 5 or less, as well as a cleaning method using the cleaning solution.

Description

Claims

1. A cleaning solution for a substrate for use in a semiconductor device, which is used after a chemical mechanical polishing process in a semiconductor device production process, the cleaning solution comprising a nonionic surfactant represented by the following formula (I), an organic acid, and a polyethylene glycol having a number average molecular weight of 5,000 or less, wherein the pH of the cleaning solution is 5 or less:

2. A cleaning solution for a substrate for use in a semiconductor device according to claim 1, wherein m and n in the nonionic surfactant represented by the formula (I) each independently represents an integer of from 1 to 10.

3. A cleaning solution for a substrate for use in a semiconductor device according to claim 1, wherein the organic acid is an organic carboxylic acid.

4. A cleaning solution for a substrate for use in a semiconductor device according to claim 1, wherein m and n in the formula (I) each independently represent an integer of from 1 to 8.

5. A cleaning solution for a substrate for use in a semiconductor device according to claim 1, wherein the nonionic surfactant is W-1 represented by the following structural formula:

6. A cleaning solution for a substrate for use in a semiconductor device according to claim 1, wherein the nonionic surfactant is W-2 represented by the following structural formula:

7. A cleaning solution for a substrate for use in a semiconductor device according to claim 6, wherein m and n in W-2 represented by the structural formula are the same integer.

8. A cleaning solution for a substrate for use in a semiconductor device according to claim 1, wherein the number average molecular weight of the polyethylene glycol is from 100 to 5000.

9. A cleaning solution for a substrate for use in a semiconductor device according to claim 1, wherein the pH of the cleaning solution is from 1 to 5.

10. A cleaning method for a substrate for use in a semiconductor device, which uses the cleaning solution according to claim 1.