Cleaning solutions including preservative compounds for post CMP cleaning processes

Abstract

Post CMP cleaning solutions are provided including at least one cleaning agent comprising an organic acid compound, at least one preservative compound that substantially minimizes or prevents microbial growth in the cleaning solution, and at least one amine compound. The preservative compound can be another organic acid compound that protects the cleaning solution against microbial growth. The cleaning solutions preferably have a pH ranging from about 2 to about 7.

Description

Claims

1. A cleaning solution comprising: at least one cleaning agent comprising an organic acid compound;at least one preservative compound that substantially minimizes or prevents microbial growth in the cleaning solution; andat least one amine compound.

2. The solution of claim 1, wherein the pH of the solution is in the range from about 2 to about 7.

3. The solution of claim 1, wherein the pH of the solution is no greater than about 5.

4. The solution of claim 1, wherein the at least one cleaning agent is selected from the group consisting of citric acid, oxalic acid, tartaric acid, succinic acid gluconic acid, malic acid, malonic acid, maleic acid, glutaric acid, fumaric acid and mixtures thereof.

5. The solution of claim 4, wherein the at least one preservative compound is selected from the group consisting of salicylic acid, benzoic acid, sorbic acid, formic acid, acetic acid, lactic acid, propionic acid, and mixtures thereof.

6. The solution of claim 1, wherein the solution includes from about 2.5% to about 25% by weight of the at least one cleaning agent in the solution, from about 0.25% to about 2.5% by weight of the at least one preservative compound in the solution, and from about 1.0% to about 10% by weight of the at least one organic amine compound in the solution.

7. The solution of claim 1, wherein the solution includes from about 0.05% to about 0.5% by weight of the at least one cleaning agent in the solution, from about 0.005% to about 0.05% by weight of the at least one preservative compound in the solution, and from about 0.015% to about 0.15% by weight of the at least one organic amine compound in the solution.

8. The solution of claim 1, wherein the at least one cleaning agent comprises citric acid, and the preservative compound comprises salicylic acid.

9. The solution of claim 8, wherein at least one amine compound comprises at least one of isopropanolamine and triethanolamine.

10. The solution of claim 9, wherein the at least one cleaning agent includes from about 10-15% by weight of citric acid and from about 0-5% by weight of tartaric acid in the solution, the at least one preservative compound includes from about 0-2% by weight of salicylic acid in the solution, and the at least one organic amine compound includes from about 0-5% by weight of isopropanolamine in the solution.

11. A method of cleaning a semiconductor component, the method comprising: providing a cleaning solution comprising at least one cleaning agent including an organic acid compound, at least one preservative compound that substantially minimizes or prevents microbial growth in the cleaning solution, and at least one amine compound; andcontacting a surface of the semiconductor component with the cleaning solution.

12. The method of claim 11, wherein the pH of the solution is in the range from about 2 to about 7.

13. The method of claim 11, wherein the pH of the solution is no greater than about 5.

14. The method of claim 11, wherein the at least one cleaning agent is selected from the group consisting of citric acid, oxalic acid, tartaric acid, succinic acid gluconic acid, malic acid, malonic acid, maleic acid, glutaric acid, fumaric acid and mixtures thereof.

15. The method of claim 14, wherein the at least one preservative compound is selected from the group consisting of salicylic acid, benzoic acid, sorbic acid, formic acid, acetic acid, lactic acid, propionic acid, and mixtures thereof.

16. The method of claim 15, further comprising: prior to contacting the surface of the semiconductor component with the cleaning solution, diluting the cleaning solution from about 20 times to about 100 time with deionized water such that the diluted cleaning solution includes from about 0.05% to about 0.5% by weight of the at least one cleaning agent in the solution, from about 0.005% to about 0.05% by weight of the at least one preservative compound in the solution, and from about 0.015% to about 0.15% by weight of the at least one organic amine compound in the solution.

17. The method of claim 11, wherein the at least one cleaning agent comprises citric acid, and the preservative compound comprises salicylic acid

18. The method of claim 17, wherein at least one amine compound comprises at least one of isopropanolamine and triethanolamine.

19. The method of claim 18, wherein the at least one cleaning agent includes from about 10-15% by weight of citric acid and about 0-5% by weight of tartaric acid in the solution, the at least one preservative compound includes from about 0-2% by weight of salicylic acid in the solution, and the at least one organic amine compound includes from about 0-5% by weight of isopropanolamine in the solution.