Claims
- 1. A complementary metal-oxide semicondutor (CMOS) driver circuit for tolerating a high voltage at its output comprising:
- a p-channel transistor having its source coupled to a supply voltage and its gate coupled to accept an input signal;
- a first n-channel transistor having substantially zero threshold level for preventing a high voltage approaching said supply voltage from being coupled to the drain of said p-channel transistor, wherein said first n-channel transistor has its drain coupled to the drain of said p-channel transistor, its gate coupled to a power voltage and its source coupled to an output terminal;
- a second n-channel transistor having its drain coupled to said output terminal and to the source of said first n-channel transistor, its source coupled to a return of said supply voltage, and its gate coupled to accept said input signal;
- said p-channel transistor and said second n-channel transistor operating as a CMOS driver, wherein said first n-channel transistor provides for substantially zero volts to be dropped across it when conducting, wherein said first n-channel transistor ceases conduction and disconnects said p-channel transistor from said output terminal in order to prevent destruction of said p-channel transistor when said high voltage approaching said supply voltage is impressed at said output terminal.
Parent Case Info
This is a continuation of application Ser. No. 255,361 filed Oct. 11, 1988 now abandoned.
US Referenced Citations (7)
Non-Patent Literature Citations (1)
Entry |
Joannopoulos et al., "The Physics of Hydrogenated Amorphous Silicon I, Structure, Preparation, and Devices", 1984, pp. 83-89. |
Continuations (1)
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Number |
Date |
Country |
Parent |
255361 |
Oct 1988 |
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